The present disclosure is directed to power electronics. In particular, the present disclosure provides an integrated power module with improved electrical isolation and improved thermal conductivity.
There are at least three standard methods of packaging multi-chip power modules. One popular method incorporates direct bonded copper (DBC) substrates that comprise a ceramic tile with copper bonded to top and/or bottom sides of the ceramic tile. Alumina (Al2O3), aluminum nitride (AlN), and beryllium oxide (BeO) are materials that are usable as the ceramic tile. DBC substrates are known for their high thermal conductivity and excellent electrical isolation. DBC substrates comprising AlN and copper have a thermal conductivity of at least 150 Watts per meter Kelvin (W/mK). However, DBC substrates have disadvantages of high cost, large design rules, and a limitation of only one electrical conductor routing layer.
Another multi-chip packaging method utilizes leadframe technology with either DBC isolation or a cascode-stacked die technique. However, present leadframe technology not well suited for multiple die structures that are coplanar. In particular, present leadframe technology can be compromised thermally and/or mechanically when attempted to be used for coplanar multi-chip structures.
Yet another standard multi-chip packaging technology incorporates laminate printed circuit board (PCB) technology. An advantage of laminate PCB technology is low cost, integration flexibility, and electrical conductor routing. However, a significant disadvantage of PCB technology is low thermal performance if there are multiple dies requiring high power dissipation that cannot utilize electrically conducting thermal vias due to unequal electrical potentials on both sides of the vias.
What is needed is an integrated power module with improved electrical isolation and improved thermal conductivity that is structured to realize the advantages of each of the above multi-chip packaging methods while avoiding the discussed limitations of those methods.
An integrated power module having a depletion mode device and an enhancement mode device that is configured to prevent an accidental on-state condition for the depletion mode device during a gate signal loss is disclosed. In particular, the disclosed integrated power module is structured to provide improved isolation and thermal conductivity. The structure includes a substrate having a bottom drain pad for the depletion mode device disposed on the substrate and an enhancement mode device footprint-sized cavity that extends through the substrate to the bottom drain pad. A thermally conductive and electrically insulating slug substantially fills the cavity to provide a higher efficient thermal path between the enhancement mode device and the bottom drain pad for the depletion mode device.
In at least one exemplary embodiment, a depletion mode device footprint-sized cavity in the substrate is substantially filled with a thermally conductive and electrically conductive slug that provides a higher efficient thermal path between the depletion mode device and the bottom drain pad for the depletion mode device. In yet another exemplary embodiment, the depletion mode device footprint-sized cavity is substantially filled with a thermally conductive and electrically insulating slug that provides a higher efficient thermal path between the depletion mode device and the bottom drain pad for the depletion mode device. In this case electrical connectivity is established with vias from a top-side depletion mode device drain pad to the bottom drain pad for the depletion mode device.
Those skilled in the art will appreciate the scope of the disclosure and realize additional aspects thereof after reading the following detailed description in association with the accompanying drawings.
The accompanying drawings incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the disclosure and illustrate the best mode of practicing the disclosure. Upon reading the following description in light of the accompanying drawings, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the disclosure and illustrate the best mode of practicing the disclosure. Upon reading the following description in light of the accompanying drawings, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
It will be understood that when an element such as a layer, region, or substrate is referred to as being “over,” “on,” “in,” or extending “onto” another element, it can be directly over, directly on, directly in, or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly over,” “directly on,” “directly in,” or extending “directly onto” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.
Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.
Discrete high voltage and high power semiconductor devices are predominantly normally-off, meaning that they are enhancement mode devices. The reason enhancement mode devices are favored is due to safety since an enhancement mode device will not accidently turn during a gate signal failure. However, high performance depletion mode devices have recently been developed. As a result of the nature of the depletion mode, high performance depletion mode devices are inherently normally-on and can present a danger in an event of gate signal failure such as the gate signal falling to a voltage less than needed to maintain the off-state of the depletion mode device. For example, the depletion mode device would accidently turn on if its gate voltage were to inadvertently drop to zero volts while in an off-state. As such, high performance depletion mode devices require auxiliary components and/or topologies to maintain a normally-off condition in the event of gate signal failure.
Typically, discrete transistors have three leads, which are a gate lead, a source lead, and a drain lead. It is desirable that the integrated power module 10 also adhere to this three lead convention. As such, the topology of the integrated power module 10 is configured to convert six internal connections into a conventional three leaded external topology that provides gate, source, and drain leads. However, adhering to the conventional three leaded external topology presents a problem of providing maximum heat transfer from inside the integrated power module 10 to external the integrated power module 10. Simply put, a three leaded device conversion of a six leaded multi-chip device cannot transfer as much heat as a single chip three leaded device of the same size because significant thermal paths are disrupted in a six leaded multi-chip device.
The disruption of thermal paths inside the integrated power module 10 is due to a need for electrical isolation between parts of the depletion mode device 12 and parts of the enhancement mode device 14 that are at different voltage potentials. This thermal challenge is most pronounced for lateral devices such as devices with a GaN on silicon carbide (SiC) die and a GaN on Si die, both of which need backside electrical isolation. Moreover, it is desirable that a first die comprising the depletion mode device 12 and a second die comprising the enhancement mode device 14 be substantially coplanar.
A top-side depletion device (top d-drain) pad 18 is disposed onto a top-side of the substrate 16 to which a drain contact (drain-1) of the depletion mode device 12 is electrically coupled. Further still, a top-side enhancement device (top e-drain) pad 20 is also disposed onto the top-side of the substrate 16 to which a drain contact (drain-2) of the enhancement mode device 14 is electrically coupled. The top e-drain pad 20 is spaced from the top d-drain pad 18 to electrically isolate the top d-drain pad 18 from the top e-drain pad 20. Inter-device bond wires 24 couple selected terminals between the depletion mode device 12 and enhancement mode device 14. Extra-device bond wires 26 couple gate and source contacts on the enhancement mode device 14 to gate and source leads disposed onto the substrate 16.
In the exemplary embodiment of
A second cavity is provided within the substrate 16 wherein a thermally conductive only slug (TCOS) 30 is inserted. Typically, the TCOS 30 has a thermal resistivity that is at least 2 times lower than the thermal resistivity of the substrate 16 that is bonded between the e-drain pad 20 and the enhancement mode device 14. The TCOS 30 is bonded to the substrate 16 with the second cavity using a non-conductive epoxy 32. Once securely embedded within the substrate 16, the TCOS 30 provides a highly efficient thermal path between the enhancement mode device 14 and the bottom d-drain pad 22. A second plating 36 that is electrically conductive is disposed over the top e-drain pad 20 to electrically and thermally couple the drain contact (drain-2) of the enhancement mode device 14 to the e-drain pad 20 after the TECS 28 is embedded within the substrate 16.
In the exemplary case of
In at least some embodiments, the TCOS 30 is a direct bonded copper (DBC structure) having a ceramic substrate 38 with top-side copper 40 and bottom-side copper 42 as best seen in
Those skilled in the art will recognize improvements and modifications to the embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.
This application claims the benefit of U.S. provisional patent application No. 62/046,236, filed Sep. 5, 2014, the disclosure of which is incorporated herein by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
4236119 | Battjes | Nov 1980 | A |
4317055 | Yoshida et al. | Feb 1982 | A |
4540954 | Apel | Sep 1985 | A |
4543535 | Ayasli | Sep 1985 | A |
4620207 | Calviello | Oct 1986 | A |
4788511 | Schindler | Nov 1988 | A |
5028879 | Kim | Jul 1991 | A |
5046155 | Beyer et al. | Sep 1991 | A |
5047355 | Huber et al. | Sep 1991 | A |
5107323 | Knolle et al. | Apr 1992 | A |
5118993 | Yang | Jun 1992 | A |
5208547 | Schindler | May 1993 | A |
5227734 | Schindler et al. | Jul 1993 | A |
5306656 | Williams et al. | Apr 1994 | A |
5361038 | Allen et al. | Nov 1994 | A |
5365197 | Ikalainen | Nov 1994 | A |
5389571 | Takeuchi et al. | Feb 1995 | A |
5406111 | Sun | Apr 1995 | A |
5414387 | Nakahara et al. | May 1995 | A |
5485118 | Chick | Jan 1996 | A |
5608353 | Pratt | Mar 1997 | A |
5629648 | Pratt | May 1997 | A |
5698870 | Nakano et al. | Dec 1997 | A |
5742205 | Cowen et al. | Apr 1998 | A |
5764673 | Kawazu et al. | Jun 1998 | A |
5834326 | Miyachi et al. | Nov 1998 | A |
5843590 | Miura et al. | Dec 1998 | A |
5864156 | Juengling | Jan 1999 | A |
5874747 | Redwing et al. | Feb 1999 | A |
5880640 | Dueme | Mar 1999 | A |
5914501 | Antle et al. | Jun 1999 | A |
5949140 | Nishi et al. | Sep 1999 | A |
6049250 | Kintis et al. | Apr 2000 | A |
6064082 | Kawai et al. | May 2000 | A |
6110757 | Udagawa | Aug 2000 | A |
6130579 | Iyer et al. | Oct 2000 | A |
6133589 | Krames et al. | Oct 2000 | A |
6177685 | Teraguchi et al. | Jan 2001 | B1 |
6191656 | Nadler | Feb 2001 | B1 |
6229395 | Kay | May 2001 | B1 |
6265943 | Dening et al. | Jul 2001 | B1 |
6271727 | Schmukler | Aug 2001 | B1 |
6285239 | Iyer et al. | Sep 2001 | B1 |
6306709 | Miyagi et al. | Oct 2001 | B1 |
6307364 | Augustine | Oct 2001 | B1 |
6313705 | Dening et al. | Nov 2001 | B1 |
6329809 | Dening et al. | Dec 2001 | B1 |
6333677 | Dening | Dec 2001 | B1 |
6342815 | Kobayashi | Jan 2002 | B1 |
6356150 | Spears et al. | Mar 2002 | B1 |
6369656 | Dening et al. | Apr 2002 | B2 |
6369657 | Dening et al. | Apr 2002 | B2 |
6373318 | Dohnke et al. | Apr 2002 | B1 |
6376864 | Wang | Apr 2002 | B1 |
6377125 | Pavio et al. | Apr 2002 | B1 |
6384433 | Barratt et al. | May 2002 | B1 |
6387733 | Holyoak et al. | May 2002 | B1 |
6392487 | Alexanian | May 2002 | B1 |
6400226 | Sato | Jun 2002 | B2 |
6404287 | Dening et al. | Jun 2002 | B2 |
6418174 | Benedict | Jul 2002 | B1 |
6448793 | Barratt et al. | Sep 2002 | B1 |
6455877 | Ogawa et al. | Sep 2002 | B1 |
6455925 | Laureanti | Sep 2002 | B1 |
6475916 | Lee et al. | Nov 2002 | B1 |
6477682 | Cypher | Nov 2002 | B2 |
6521998 | Teraguchi et al. | Feb 2003 | B1 |
6525611 | Dening et al. | Feb 2003 | B1 |
6528983 | Augustine | Mar 2003 | B1 |
6560452 | Shealy | May 2003 | B1 |
6566963 | Yan et al. | May 2003 | B1 |
6589877 | Thakur | Jul 2003 | B1 |
6593597 | Sheu | Jul 2003 | B2 |
6608367 | Gibson et al. | Aug 2003 | B1 |
6614281 | Baudelot et al. | Sep 2003 | B1 |
6621140 | Gibson et al. | Sep 2003 | B1 |
6624452 | Yu et al. | Sep 2003 | B2 |
6627552 | Nishio et al. | Sep 2003 | B1 |
6633073 | Rezvani et al. | Oct 2003 | B2 |
6633195 | Baudelot et al. | Oct 2003 | B2 |
6639470 | Andrys et al. | Oct 2003 | B1 |
6656271 | Yonehara et al. | Dec 2003 | B2 |
6657592 | Dening et al. | Dec 2003 | B2 |
6660606 | Miyabayashi et al. | Dec 2003 | B2 |
6701134 | Epperson | Mar 2004 | B1 |
6701138 | Epperson et al. | Mar 2004 | B2 |
6706576 | Ngo et al. | Mar 2004 | B1 |
6720831 | Dening et al. | Apr 2004 | B2 |
6723587 | Cho et al. | Apr 2004 | B2 |
6724252 | Ngo et al. | Apr 2004 | B2 |
6727762 | Kobayashi | Apr 2004 | B1 |
6748204 | Razavi et al. | Jun 2004 | B1 |
6750158 | Ogawa et al. | Jun 2004 | B2 |
6750482 | Seaford et al. | Jun 2004 | B2 |
6759907 | Orr et al. | Jul 2004 | B2 |
6802902 | Beaumont et al. | Oct 2004 | B2 |
6815722 | Lai et al. | Nov 2004 | B2 |
6815730 | Yamada | Nov 2004 | B2 |
6822842 | Friedrichs et al. | Nov 2004 | B2 |
6861677 | Chen | Mar 2005 | B2 |
6943631 | Scherrer et al. | Sep 2005 | B2 |
7015512 | Park et al. | Mar 2006 | B2 |
7026665 | Smart et al. | Apr 2006 | B1 |
7033961 | Smart et al. | Apr 2006 | B1 |
7042150 | Yasuda | May 2006 | B2 |
7052942 | Smart et al. | May 2006 | B1 |
7135747 | Allen et al. | Nov 2006 | B2 |
7211822 | Nagahama et al. | May 2007 | B2 |
7408182 | Smart et al. | Aug 2008 | B1 |
7449762 | Singh | Nov 2008 | B1 |
7459356 | Smart et al. | Dec 2008 | B1 |
7557421 | Shealy et al. | Jul 2009 | B1 |
7719055 | McNutt et al. | May 2010 | B1 |
7768758 | Maier et al. | Aug 2010 | B2 |
7804262 | Schuster et al. | Sep 2010 | B2 |
7923826 | Takahashi | Apr 2011 | B2 |
7935983 | Saito et al. | May 2011 | B2 |
7968391 | Smart et al. | Jun 2011 | B1 |
7974322 | Ueda et al. | Jul 2011 | B2 |
8017981 | Sankin et al. | Sep 2011 | B2 |
8110915 | Fowlkes | Feb 2012 | B2 |
8237198 | Wu et al. | Aug 2012 | B2 |
8405068 | O'Keefe | Mar 2013 | B2 |
8502258 | O'Keefe | Aug 2013 | B2 |
8530978 | Chu et al. | Sep 2013 | B1 |
8633518 | Suh et al. | Jan 2014 | B2 |
8692294 | Chu et al. | Apr 2014 | B2 |
8729680 | Kobayashi | May 2014 | B2 |
8785976 | Nakajima et al. | Jul 2014 | B2 |
8988097 | Ritenour | Mar 2015 | B2 |
9070761 | Johnson | Jun 2015 | B2 |
9082836 | Senda | Jul 2015 | B2 |
9093420 | Kobayashi et al. | Jul 2015 | B2 |
9124221 | Vetury et al. | Sep 2015 | B2 |
9129802 | Ritenour | Sep 2015 | B2 |
9136341 | Kobayashi et al. | Sep 2015 | B2 |
20010040246 | Ishii | Nov 2001 | A1 |
20010054848 | Baudelot et al. | Dec 2001 | A1 |
20020005528 | Nagahara | Jan 2002 | A1 |
20020031851 | Linthicum et al. | Mar 2002 | A1 |
20020048302 | Kimura | Apr 2002 | A1 |
20020079508 | Yoshida | Jun 2002 | A1 |
20030003630 | Iimura et al. | Jan 2003 | A1 |
20030122139 | Meng et al. | Jul 2003 | A1 |
20030160307 | Gibson et al. | Aug 2003 | A1 |
20030160317 | Sakamoto et al. | Aug 2003 | A1 |
20030206440 | Wong | Nov 2003 | A1 |
20030209730 | Gibson et al. | Nov 2003 | A1 |
20030218183 | Micovic et al. | Nov 2003 | A1 |
20040070003 | Gaska et al. | Apr 2004 | A1 |
20040130037 | Mishra et al. | Jul 2004 | A1 |
20040144991 | Kikkawa | Jul 2004 | A1 |
20040227211 | Saito et al. | Nov 2004 | A1 |
20040241916 | Chau et al. | Dec 2004 | A1 |
20050110042 | Saito et al. | May 2005 | A1 |
20050139868 | Anda | Jun 2005 | A1 |
20050189559 | Saito et al. | Sep 2005 | A1 |
20050189562 | Kinzer et al. | Sep 2005 | A1 |
20050194612 | Beach | Sep 2005 | A1 |
20050212049 | Onodera | Sep 2005 | A1 |
20050225912 | Pant et al. | Oct 2005 | A1 |
20050271107 | Murakami et al. | Dec 2005 | A1 |
20050274977 | Saito et al. | Dec 2005 | A1 |
20060043385 | Wang et al. | Mar 2006 | A1 |
20060043501 | Saito et al. | Mar 2006 | A1 |
20060054924 | Saito et al. | Mar 2006 | A1 |
20060068601 | Lee et al. | Mar 2006 | A1 |
20060124960 | Hirose et al. | Jun 2006 | A1 |
20060205161 | Das et al. | Sep 2006 | A1 |
20060243988 | Narukawa et al. | Nov 2006 | A1 |
20060246680 | Bhattacharyya | Nov 2006 | A1 |
20060249750 | Johnson et al. | Nov 2006 | A1 |
20060255377 | Tu | Nov 2006 | A1 |
20070026676 | Li et al. | Feb 2007 | A1 |
20070093009 | Baptist et al. | Apr 2007 | A1 |
20070138545 | Lin et al. | Jun 2007 | A1 |
20070158692 | Nakayama et al. | Jul 2007 | A1 |
20070164326 | Okamoto et al. | Jul 2007 | A1 |
20070205433 | Parikh et al. | Sep 2007 | A1 |
20070295985 | Weeks, Jr. et al. | Dec 2007 | A1 |
20080023706 | Saito et al. | Jan 2008 | A1 |
20080073752 | Asai et al. | Mar 2008 | A1 |
20080112448 | Ueda et al. | May 2008 | A1 |
20080121875 | Kim | May 2008 | A1 |
20080142837 | Sato et al. | Jun 2008 | A1 |
20080179737 | Haga et al. | Jul 2008 | A1 |
20080190355 | Chen et al. | Aug 2008 | A1 |
20080217753 | Otani | Sep 2008 | A1 |
20080272382 | Kim et al. | Nov 2008 | A1 |
20080272422 | Min | Nov 2008 | A1 |
20080283821 | Park et al. | Nov 2008 | A1 |
20080308813 | Suh et al. | Dec 2008 | A1 |
20090072269 | Suh et al. | Mar 2009 | A1 |
20090090984 | Khan et al. | Apr 2009 | A1 |
20090146185 | Suh et al. | Jun 2009 | A1 |
20090146186 | Kub et al. | Jun 2009 | A1 |
20090166677 | Shibata et al. | Jul 2009 | A1 |
20090200576 | Saito et al. | Aug 2009 | A1 |
20090273002 | Chiou et al. | Nov 2009 | A1 |
20090278137 | Sheridan et al. | Nov 2009 | A1 |
20100025657 | Nagahama et al. | Feb 2010 | A1 |
20100025737 | Ishikura | Feb 2010 | A1 |
20100133567 | Son | Jun 2010 | A1 |
20100187575 | Baumgartner et al. | Jul 2010 | A1 |
20100207164 | Shibata et al. | Aug 2010 | A1 |
20100230656 | O'Keefe | Sep 2010 | A1 |
20100230717 | Saito | Sep 2010 | A1 |
20100258898 | Lahreche | Oct 2010 | A1 |
20110017972 | O'Keefe | Jan 2011 | A1 |
20110025422 | Marra et al. | Feb 2011 | A1 |
20110031633 | Hsu et al. | Feb 2011 | A1 |
20110095337 | Sato | Apr 2011 | A1 |
20110101300 | O'Keefe | May 2011 | A1 |
20110108887 | Fareed et al. | May 2011 | A1 |
20110115025 | Okamoto | May 2011 | A1 |
20110127586 | Bobde et al. | Jun 2011 | A1 |
20110163342 | Kim et al. | Jul 2011 | A1 |
20110175142 | Tsurumi et al. | Jul 2011 | A1 |
20110199148 | Iwamura | Aug 2011 | A1 |
20110211289 | Kosowsky et al. | Sep 2011 | A1 |
20110242921 | Tran et al. | Oct 2011 | A1 |
20110290174 | Leonard et al. | Dec 2011 | A1 |
20120018735 | Ishii | Jan 2012 | A1 |
20120086497 | Vorhaus | Apr 2012 | A1 |
20120126240 | Won | May 2012 | A1 |
20120199875 | Bhalla et al. | Aug 2012 | A1 |
20120199955 | Sun | Aug 2012 | A1 |
20120211802 | Tamari | Aug 2012 | A1 |
20120218783 | Imada | Aug 2012 | A1 |
20120262220 | Springett | Oct 2012 | A1 |
20130032897 | Narayanan et al. | Feb 2013 | A1 |
20130277687 | Kobayashi et al. | Oct 2013 | A1 |
20130280877 | Kobayashi et al. | Oct 2013 | A1 |
20140117559 | Zimmerman et al. | May 2014 | A1 |
20140264266 | Li et al. | Sep 2014 | A1 |
20140264454 | Banerjee et al. | Sep 2014 | A1 |
Number | Date | Country |
---|---|---|
1187229 | Mar 2002 | EP |
1826041 | Aug 2007 | EP |
H10242584 | Sep 1998 | JP |
2000031535 | Jan 2000 | JP |
2003332618 | Nov 2003 | JP |
2008148511 | Jun 2008 | JP |
2008258419 | Oct 2008 | JP |
20070066051 | Jun 2007 | KR |
2004051707 | Jun 2004 | WO |
2011162243 | Dec 2011 | WO |
Entry |
---|
Author Unknown, “CGHV1J006D: 6 W, 18.0 GHz, GaN HEMT Die,” Cree, Inc., 2014, 9 pages. |
Boutros, K.S., et al., “5W GaN MMIC for Millimeter-Wave Applications,” 2006 Compound Semiconductor Integrated circuit Symposium, Nov. 2006, pp. 93-95. |
Chang, S.J. et al., “Improved ESD protection by combining InGaN—GaN MQW LEDs with GaN Schottky diodes,” IEEE Electron Device Letters, Mar. 2003, vol. 24, No. 3, pp. 129-131. |
Chao, C-H., et al., “Theoretical demonstration of enhancement of light extraction of flip-chip GaN light-emitting diodes with photonic crystals,” Applied Physics Letters, vol. 89, 2006, 4 pages. |
Cho, H., et al., “High Density Plasma Via Hole Etching in SiC,” Journal of Vacuum Science & Technology A: Surfaces and Films, vol. 19, No. 4, Jul./Aug. 2001, pp. 1878-1881. |
Darwish, A.M., et al., “Dependence of GaN HEMT Millimeter-Wave Performance on Temperature,” IEEE Transactions on Microwave Theory and Techniques, vol. 57, No. 12, Dec. 2009, pp. 3205-3211. |
Fath, P. et al., “Mechanical wafer engineering for high efficiency solar cells: An investigation of the induced surface Damage,” Conference Record of the Twenty-Fourth IEEE Photovoltaic Specialists Conference, Dec. 5-9, 1994, vol. 2, pp. 1347-1350. |
Han, D.S. et al., “Improvement of Light Extraction Efficiency of Flip-Chip Light-Emitting Diode by Texturing the Bottom Side Surface of Sapphire Substrate,” IEEE Photonics Technology Letters, Jul. 1, 2006, vol. 18, No. 13, pp. 1406-1408. |
Hibbard, D.L. et al., “Low Resistance High Reflectance Contacts to p—GaN Using Oxidized Ni/Au and Al or Ag,” Applied Physics Letters, vol. 83, No. 2, Jul. 14, 2003, pp. 311-313. |
Krüger, Olaf, et al., “Laser-Assisted Processing of VIAs for AlGaN/GaN HEMTs on SiC Substrates,” IEEE Electron Device Letters, vol. 27, No. 6, Jun. 2006, pp. 425-427. |
Lee, S.J., “Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes,” Optical Engineering, SPIE, Jan. 2006, vol. 45, No. 1, 14 pages. |
Shchekin, O.B. et al., “High performance thin-film flip-chip InGaN—GaN light-emitting diodes,” Applied Physics Letters, vol. 89, 071109, Aug. 2006, 4 pages. |
Sheppard, S.T., et al., “High Power Demonstration at 10 GHz with GaN/AlGaN HEMT Hybrid Amplifiers,” 2000 Device Research Conference, Conference Digest, Jun. 2000, pp. 37-38. |
Wierer, J.J., et al., “High-power AlGaInN flip-chip light-emitting diodes,” Applied Physics Letters, vol. 78, No. 22, May 28, 2001, pp. 3379-3381. |
Windisch, R. et al., “40% Efficient Thin-Film Surface-Textured Light-Emitting Diodes by Optimization of Natural Lithography,” IEEE Transactions on Electron Devices, Jul. 2000, vol. 47, No. 7, pp. 1492-1498. |
Windisch, R. et al., “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Applied Physics Letters, Oct. 8, 2001, vol. 79, No. 15, pp. 2315-2317. |
Final Office Action for U.S. Appl. No. 10/620,205, mailed Dec. 16, 2004, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 10/620,205, mailed Jul. 23, 2004, 7 pages. |
Non-Final Office Action for U.S. Appl. No. 10/620,205, mailed May 3, 2005, 10 pages. |
Non-Final Office Action for U.S. Appl. No. 10/689,980, mailed Jan. 26, 2005, 7 pages. |
Non-Final Office Action for U.S. Appl. No. 10/689,980, mailed May 12, 2005, 8 pages. |
Non-Final Office Action for U.S. Appl. No. 11/397,279, mailed Oct. 31, 2007, 7 pages. |
Notice of Allowance for U.S. Appl. No. 11/397,279, mailed Apr. 17, 2008, 7 pages. |
Final Office Action for U.S. Appl. No. 10/689,979, mailed Jun. 29, 2005, 16 pages. |
Non-Final Office Action for U.S. Appl. No. 10/689,979, mailed Jan. 11, 2005, 14 pages. |
Notice of Allowance for U.S. Appl. No. 10/689,979, mailed Oct. 26, 2005, 6 pages. |
Non-Final Office Action for U.S. Appl. No. 11/360,734, mailed Jan. 18, 2008, 10 pages. |
Notice of Allowance for U.S. Appl. No. 11/360,734, mailed Aug. 7, 2008, 6 pages. |
Final Office Action for U.S. Appl. No. 11/937,207, mailed Nov. 19, 2009, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 11/937,207, mailed Mar. 18, 2010, 10 pages. |
Non-Final Office Action for U.S. Appl. No. 11/937,207, mailed May 29, 2009, 11 pages. |
Notice of Allowance for U.S. Appl. No. 11/937,207, mailed Feb. 28, 2011, 8 pages. |
Quayle Action for U.S. Appl. No. 11/937,207, mailed Nov. 24, 2010, 4 pages. |
Final Office Action for U.S. Appl. No. 11/458,833, mailed Dec. 15, 2008, 13 pages. |
Non-Final Office Action for U.S. Appl. No. 11/458,833, mailed Apr. 1, 2008, 10 pages. |
Notice of Allowance for U.S. Appl. No. 11/458,833, mailed Mar. 9, 2009, 7 pages. |
Non-Final Office Action for U.S. Appl. No. 13/795,926, mailed Dec. 19, 2014, 14 pages. |
Non-Final Office Action for U.S. Appl. No. 13/942,998, mailed Nov. 19, 2014, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 13/871,526, mailed Dec. 16, 2014, 17 pages. |
Invitation to Pay Fees for PCT/US2013/056105, mailed Nov. 5, 2013, 7 pages. |
International Search Report and Written Opinion for PCT/US2013/056105, mailed Feb. 12, 2014, 15 pages. |
Non-Final Office Action for U.S. Appl. No. 13/910,202, mailed Sep. 25, 2014, 9 pages. |
Final Office Action for U.S. Appl. No. 13/910,202, mailed Jan. 20, 2015, 10 pages. |
International Search Report and Written Opinion for PCT/US2013/056126, mailed Oct. 25, 2013, 10 pages. |
Non-Final Office Action for U.S. Appl. No. 13/927,182, mailed May 1, 2014, 7 pages. |
Final Office Action for U.S. Appl. No. 13/927,182, mailed Sep. 17, 2014, 10 pages. |
Non-Final Office Action for U.S. Appl. No. 13/974,488, mailed Oct. 28, 2014, 8 pages. |
Notice of Allowance for U.S. Appl. No. 13/914,060, mailed Nov. 13, 2014, 8 pages. |
Non-Final Office Action for U.S. Appl. No. 13/966,400, mailed Sep. 3, 2014, 9 pages. |
Final Office Action for U.S. Appl. No. 13/966,400, mailed Dec. 3, 2014, 8 pages. |
Non-Final Office Action for U.S. Appl. No. 13/957,698, mailed Nov. 5, 2014, 11 pages. |
International Search Report and Written Opinion for PCT/US2013/056132, mailed Oct. 10, 2013, 11 pages. |
Final Office Action for U.S. Appl. No. 13/973,482, mailed Nov. 5, 2014, 9 pages. |
International Search Report and Written Opinion for PCT/US2013/056187, mailed Oct. 10, 2013, 11 pages. |
Non-Final Office Action for U.S. Appl. No. 13/973,482, mailed May 23, 2014, 8 pages. |
Non-Final Office Action for U.S. Appl. No. 13/795,986, mailed Apr. 24, 2014, 13 pages. |
Final Office Action for U.S. Appl. No. 13/795,986, mailed Dec. 5, 2014, 16 pages. |
International Search Report for GB0902558.6, issued Jun. 15, 2010, by the UK Intellectual Property Office, 2 pages. |
Examination Report for British Patent Application No. 0902558.6, mailed Nov. 16, 2012, 5 pages. |
Examination Report for British Patent Application No. GB0902558.6, issued Feb. 28, 2013, 2 pages. |
Non-Final Office Action for U.S. Appl. No. 12/705,869, mailed Feb. 9, 2012, 10 pages. |
Notice of Allowance for U.S. Appl. No. 12/705,869, mailed Apr. 4, 2013, 9 pages. |
Notice of Allowance for U.S. Appl. No. 12/705,869, mailed Jul. 19, 2012, 8 pages. |
Advisory Action for U.S. Appl. No. 12/841,225, mailed Apr. 16, 2012, 3 pages. |
Final Office Action for U.S. Appl. No. 12/841,225 mailed Feb. 1, 2012, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 12/841,225, mailed May 2, 2012, 10 pages. |
Non-Final Office Action for U.S. Appl. No. 12/841,225 mailed Dec. 22, 2011, 8 pages. |
Non-Final Office Action for U.S. Appl. No. 12/841,257 mailed Jan. 5, 2012, 13 pages. |
Notice of Allowance for U.S. Appl. No. 13/795,926, mailed Apr. 27, 2015, 8 pages. |
Notice of Allowance for U.S. Appl. No. 13/942,998, mailed Apr. 27, 2015, 8 pages. |
Final Office Action for U.S. Appl. No. 13/871,526, mailed Jun. 17, 2015, 11 pages. |
Advisory Action for U.S. Appl. No. 13/871,526, mailed Sep. 3, 2015, 3 pages. |
International Preliminary Report on Patentability for PCT/US2013/056105, mailed Mar. 5, 2015, 12 pages. |
Advisory Action for U.S. Appl. No. 13/910,202, mailed Apr. 6, 2015, 3 pages. |
Notice of Allowance for U.S. Appl. No. 13/910,202, mailed May 14, 2015, 9 pages. |
International Preliminary Report on Patentability for PCT/US2013/056126, mailed Mar. 5, 2015, 7 pages. |
Final Office Action for U.S. Appl. No. 13/974,488, mailed Feb. 20, 2015, 8 pages. |
Notice of Allowance for U.S. Appl. No. 13/974,488, mailed May 29, 2015, 9 pages. |
Notice of Allowance for U.S. Appl. No. 13/966,400, mailed Feb. 20, 2015, 8 pages. |
Notice of Allowance for U.S. Appl. No. 13/957,698, mailed Mar. 30, 2015, 7 pages. |
Corrected/Supplemental Notice of Allowability for U.S. Appl. No. 13/957,689, mailed May 20, 2015, 3 pages. |
Corrected/Supplement Notice of Allowability for U.S. Appl. No. 13/957,689, mailed Jun. 9, 2015, 4 pages. |
Notice of Allowance for U.S. Appl. No. 13/957,698, mailed Jul. 20, 2015, 7 pages. |
Non-Final Office Action for U.S. Appl. No. 14/557,940, mailed Aug. 31, 2015, 8 pages. |
International Preliminary Report on Patentability for PCT/US2013/056132, mailed Mar. 5, 2015, 9 pages. |
International Preliminary Report on Patentability for PCT/US2013/056187, mailed Mar. 12, 2015, 9 pages. |
Notice of Allowance for U.S. Appl. No. 13/973,482, mailed May 4, 2015, 7 pages. |
Notice of Allowance for U.S. Appl. No. 13/795,986, mailed Mar. 6, 2015, 8 pages. |
Non-Final Office Action for U.S. Appl. No. 14/067,019, mailed Mar. 25, 2015, 7 pages. |
Advisory Action for U.S. Appl. No. 10/620,205, mailed Feb. 15, 2005, 2 pages. |
Notice of Allowance for U.S. Appl. No. 10/620,205, mailed Dec. 8, 2005, 4 pages. |
Notice of Allowance for U.S. Appl. No. 12/841,225, mailed Nov. 9, 2012, 5 pages. |
Non-Final Office Action for U.S. Appl. No. 14/749,274, mailed Feb. 22, 2016, 6 pages. |
Corrected/Supplemental Notice of Allowability for U.S. Appl. No. 13/957,698, mailed Nov. 4, 2015, 4 pages. |
Final Office Action for U.S. Appl. No. 14/557,940, mailed Feb. 8, 2016, 8 pages. |
Notice of Allowance for U.S. Appl. No. 14/067,019, mailed Oct. 13, 2015, 6 pages. |
Huang, Xiucheng et al., “Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration,” IEEE Transactions on Power Electronics, vol. 29, No. 5, May 2014, IEEE, pp. 2208-2219. |
Lee, Han S., “GaN-on-Silicon-Based Power Switch in Sintered, Dual-Side Cooled Package,” PowerElectronics.com, Jan. 2, 2013, 5 pages, http://powerelectronics.com/discrete-power-semis/gan-silicon-based-power-switch-sintered-dual-side-cooled-package. |
Liang, Zhenxian et al., “Embedded Power—An Integration Packaging Technology for IPEMs,” The International Journal of Microcircuits and Electronic Packaging, vol. 23, No. 4, 2000, pp. 481-487. |
Li, Xueqing et al., “Investigation of SiC Stack and Discrete Cascodes” PowerPoint Presentation, PCIM Europe, May 20-22, 2014, Nuremberg, Germany, 26 slides. |
Stevanovic, Ljubisa D. et al., “Low Inductance Power Module with Blade Connector,” 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Feb. 21-25, 2010, IEEE, Palm Springs, CA, pp. 1603-1609. |
Lin, C.K. et al., “GaN Lattice Matched ZnO/Pr2O3 Film as Gate Dielectric Oxide Layer for AlGaN/GaN HEMT,” IEEE ntemational Conference of Electron Devices and Solid-State Circuits, EDSSC 2009, IEEE, Dec. 25-27, 2009, Xi'an, China, pp. 408-411. |
Lin, H. C. et al., “Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs,” Applied Physics Letters, vol. 87, 2005, pp. 182094-1 to 182094-3. |
Lossy, R. et al., “Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric,” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 31, No. 1, Jan./Feb. 2013, 6 pages. |
Seok, O. et al., “High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended Tan gate on HfO2 gate insulator,” Electronics Letters, vol. 49, No. 6, Institute of Engineering and Technology, Mar. 14, 2013, 2 pages. |
Tang, K. et al., “Enhancement-mode GaN Hybrid MOS-HEMTs with Breakdown Voltage of 1300V,” 21st International Symposium on Power Semiconductor Devices & IC's, ISPSD 2009, IEEE, Jun. 14-18, 2009, Barcelona, Spain, pp. 279-282. |
Ye, P.D., et al., “GaN MOS-HEMT Using Atomic Layer Deposition Al2O3 as Gate Dielectric and Surface Passivation,” International Journal of High Speed Electronics and Systems, vol. 14, No. 3, 2004, pp. 791-796. |
Non-Final Office Action for U.S. Appl. No. 14/731,736, mailed Jan. 14, 2016, 10 pages. |
Liang, Zhenxian et al., “Embedded Power—A Multilayer Integration Technology for Packaging of IPEMs and PEBBs,” Proceedings of International Workshop on Integrated Power Packaging, Jul. 14-16, 2000, IEEE, pp. 41-45. |
Non-Final Office Action for U.S. Appl. No. 13/871,526, mailed Mar. 8, 2016, 13 pages. |
Notice of Allowance for U.S. Appl. No. 14/731,736, mailed May 9, 2016, 8 pages. |
Final Office Action for U.S. Appl. No. 14/749,274, mailed Jun. 23, 2016, 6 pages. |
Notice of Allowance for U.S. Appl. No. 14/749,274, mailed Aug. 15, 2016, 7 pages. |
Non-Final Office Action for U.S. Appl. No. 14/797,573, mailed Jul. 7, 2016, 8 pages. |
Final Office Action for U.S. Appl. No. 13/871,526, mailed Aug. 30, 2016, 14 pages. |
Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 13/871,526, mailed Oct. 31, 2016, 4 pages. |
Number | Date | Country | |
---|---|---|---|
20160071781 A1 | Mar 2016 | US |
Number | Date | Country | |
---|---|---|---|
62046236 | Sep 2014 | US |