Claims
- 1. A method for manufacturing a semiconductor device comprising the steps of:forming leads at one surface side of a metal laminate plate comprising plural layers containing an etching stopper layer by the surface layer itself or another metal layer further formed on the surface layer, each lead being connected to an electrode of a semiconductor element at one end portion thereof and to an external electrode at the other end portion thereof; forming an insulating film at said one surface side so as to have said leads embedded therein and have holes for forming the external electrodes; forming external terminals in said holes so that said external terminals are connected to the other end portions of said leads; forming reinforcing portions on suspending portions; selectively etching said laminate plate from the surface side opposite to said one surface to form an outer ring having said suspending portions; and connecting said one end portions of said leads to said electrodes of said semiconductor element.
- 2. The method as claimed in claim 1, wherein said reinforcing portions on said suspending portions are formed of the same material as said external terminals in the same process as said external terminals.
- 3. A method for manufacturing a semiconductor device comprising the steps of:forming leads at one surface side of a metal laminate plate comprising plural layers containing an etching stopper layer by the surface layer itself or another metal layer further formed on the surface layer, each lead being connected to an electrode of a semiconductor element at one end portion thereof and to an external electrode at the other end portion thereof; forming an insulating film at said one surface side so as to have said leads embedded therein and have holes for forming the external electrodes; forming external terminals in said holes so that said external terminals are connected to the other end portions of said leads; forming reinforcing portions on said leads; selectively etching said laminate plate from the surface side opposite to said one surface to form an outer ring having suspending portions; and connecting said one end portions of said leads to said electrodes of said semiconductor element.
- 4. The method as claimed in claim 3, wherein said reinforcing portions on said leads are formed by extending said insulating film.
- 5. The method as claimed in claim 3, wherein said insulating film is extended to the lead extension side with respect to the lead bending position when said leads are connected to said electrodes of said semiconductor element.
Priority Claims (4)
Number |
Date |
Country |
Kind |
8-213843 |
Aug 1996 |
JP |
|
8-222033 |
Aug 1996 |
JP |
|
8-231538 |
Sep 1996 |
JP |
|
8-235102 |
Sep 1996 |
JP |
|
Parent Case Info
This application is a divisional application of application Ser. No. 08/909,814 filed Aug. 12, 1997, now U.S. Pat. No. 6,107,678 incorporated herein by reference.
US Referenced Citations (10)