Claims
- 1. A metallized structure for use in a microelectronic circuit, the metallized structure comprising:
a dielectric layer; an ultra-thin film bonding layer disposed exterior to the dielectric layer; and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer.
- 2. A metallized structure as set forth in claim 1 wherein the dielectric layer is formed from a low-K dielectric material.
- 3. A metallized structure as set forth in claim 1 wherein the dielectric layer is formed from a high-K dielectric material.
- 4. A metallized structure as set forth in claim 1 wherein the Me content of the copper-Me alloy layer is less than or equal to about 5 atomic percent.
- 5. A metallized structure as set forth in claim 1 wherein the zinc content of the copper-Me alloy layer is less than or equal to about 2 atomic percent.
- 6. A metallized structure as set forth in claim 1 wherein the zinc content of the copper-Me alloy layer is less than or equal to about 1 atomic percent.
- 7. A metallized structure as set forth in claim 1 wherein the ultra-thin bonding layer has a thickness between about 10-20 angstrom s.
- 8. A metallized structure as set forth in claim 7 wherein the ultra-thin bonding layer has a thickness of less than about 15 angstroms.
- 9. A metallized structure as set forth in claim 1 wherein the ultra-thin bonding layer is comprised of a metal.
- 10. A metallized structure as set forth in claim 1 wherein the ultra-thin bonding layer is comprised of a metal alloy.
- 11. A metallized structure for use in a microelectronic circuit, the metallized structure comprising:
a dielectric layer; an ultra-thin film bonding layer disposed exterior to the dielectric layer; and a low-zinc concentration, copper-zinc alloy layer disposed exterior to the ultra-thin film bonding layer.
- 12. A metallized structure as set forth in claim 11 and further comprising a primary copper conductor disposed exterior to the low-zinc concentration, copper-zinc alloy layer.
- 13. A metallized structure as set forth in claim 11 wherein the dielectric layer is formed from a low-K dielectric material.
- 14. A metallized structure as set forth in claim 11 wherein the dielectric layer is formed from a high-K dielectric material.
- 15. A metallized structure as set forth in claim 11 wherein the zinc content of the copper-zinc alloy layer is less than or equal to about 5 atomic percent.
- 16. A metallized structure as set forth in claim 11 wherein the zinc content of the copper-zinc alloy layer is less than or equal to about 2 atomic percent.
- 17. A metallized structure as set forth in claim 11 wherein the zinc content of the copper-zinc alloy layer is less than or equal to about 1 atomic percent.
- 18. A metallized structure as set forth in claim 11 wherein the ultra-thin bonding layer has a thickness between about 10-20 angstroms.
- 19. A metallized structure as set forth in claim 18 wherein the ultra-thin bonding layer has a thickness of less than about 15 angstroms.
- 20. A metallized structure as set forth in claim 11 wherein the ultra-thin bonding layer is comprised of a metal.
- 21. A metallized structure as set forth in claim 11 wherein the ultra-thin bonding layer is comprised of a metal alloy.
- 22. A metallized structure for use in a microelectronic circuit, the metallized structure comprising:
a dielectric layer; an ultra-thin film bonding layer disposed adjacent to the dielectric layer; and a low-zinc concentration, copper-zinc alloy layer disposed adjacent to the ultra-thin film bonding layer.
- 23. A metallized structure as set forth in claim 22 and further comprising a primary copper conductor layer adjacent the low-zinc concentration, copper-zinc alloy layer.
- 24. A metallized structure as set forth in claim 22 wherein the dielectric layer is formed from a low-K dielectric material.
- 25. A metallized structure as set forth in claim 22 wherein the dielectric layer is formed from a high-K dielectric material.
- 26. A metallized structure as set forth in claim 22 wherein the zinc content of the copper-zinc alloy layer is less than or equal to about 5 atomic percent.
- 27. A metallized structure as set forth in claim 22 wherein the zinc content of the copper-zinc alloy layer is less than or equal to about 2 atomic percent.
- 28. A metallized structure as set forth in claim 22 wherein the zinc content of the copper-zinc alloy layer is less than or equal to about 1 atomic percent.
- 29. A metallized structure as set forth in claim 22 wherein the ultra-thin bonding layer has a thickness between about 10-20 angstroms.
- 30. A metallized structure as set forth in claim 29 wherein the ultra-thin bonding layer has a thickness of less than about 15 angstroms.
- 31. A metallized structure as set forth in claim 22 wherein the ultra-thin bonding layer is formed from a material with a high magnitude free-energy of formation for compounds that will form at the dielectric-bonding layer interface.
- 32. A metallized structure as set forth in claim 22 wherein the ultra-thin bonding layer is comprised of a metal.
- 33. A metallized structure as set forth in claim 22 wherein the ultra-thin bonding layer is comprised of a metal alloy.
- 34. A method for forming a metallized structure on a microelectronic workpiece comprising the steps of:
depositing a dielectric layer on the microelectronic workpiece; depositing an ultra-thin bonding layer exterior to the dielectric layer; depositing a low Me concentration, copper-Me alloy layer exterior to the ultra-thin bonding layer, where Me is a metal other than copper.
- 35. A method for forming a metallized structure as set forth in claim 34 wherein the ultra-thin bonding layer is disposed immediately adjacent the dielectric layer and the copper-Me alloy layer is disposed immediately adjacent the ultra-thin bonding layer.
- 36. A method for forming a metallized structure as set forth in claim 35 wherein the concentration of Me is less than about 5 atomic percent.
- 37. A method for forming a metallized structure as set forth in claim 35 wherein the concentration of Me is less than about 2 atomic percent.
- 38. A method for forming a metallized structure as set forth in claim 35 wherein the concentration of Me is less than about 1 atomic percent.
- 39. A method for forming a metallized structure as set forth in claim 35 wherein Me is zinc.
- 40. A method for forming a metallized structure as set forth in claim 36 wherein Me is zinc.
- 41. A method for forming a metallized structure in set forth in claim 37 wherein Me is zinc.
- 42. A method for forming a metallized structure in set forth in claim 38 wherein Me is zinc.
- 43. A method for forming a metallized structure as set forth in claim 34 wherein the copper-Me alloy layer is deposited using an electrochemical deposition process.
- 44. A method for forming a metallized structure as set forth in claim 43 wherein the electrochemical deposition process uses a constant potential waveform.
- 45. A method for forming a metallized structure as set forth in claim 44 wherein the constant potential waveform comprises a forward pulsed waveform.
- 46. A method for forming a metallized structure as set forth in claim 35 wherein the copper-Me alloy layer is deposited using an electrochemical deposition process.
- 47. A method for forming a metallized structure as set forth in claim 41 wherein the copper-Me alloy layer is deposited using an electrochemical deposition process.
- 48. An electroplating bath for depositing a low-Me concentration, copper-Me alloy layer on the surface of a microelectronic workpiece, where Me is a metal other than copper, the bath comprising:
MeSO4 as a source of the metal Me; CuSO4 as a source of copper; (NH4)2SO4 as a complexing agent; and NH4OH as a pH adjuster.
- 49. An electroplating bath as set forth in claim 48 wherein the MeSO4 is ZnSO4.
- 50. An electroplating bath as set forth in claim 48 wherein Me in the MeSO4 is selected from the group consisting of the zinc, aluminum, boron, magnesium, and cesium.
- 51. An electroplating bath as set forth in claim 48 and further comprising an addition agent that serves as both a wetting agent and a complexing agent.
- 52. An electroplating bath as set forth in claim 51 wherein the addition agent is a chemical selected from the group consisting of ED and EDTA.
- 53. An electroplating bath for depositing a low-Me concentration, copper-Me alloy layer on the surface of a microelectronic workpiece, where Me is a metal other than copper, the bath comprising:
MeSO4 as a source of the metal Me, the MeSO4 being in the electroplating bath at a concentration between about 10-40 g/l; CuSO4 as a source of copper, the CuSO4 being in the electroplating bath at a concentration between about 5-20 g/l; (NH4)2SO4 as a complexing agent, the (NH4)2SO4 being in the electroplating bath at a concentration between about 20-40 g/l ; and NH4 OH as a pH adjuster, the (NH4)2SO4 being in the electroplating bath at a concentration between about 50-100 g/l.
- 54. An electroplating bath as set forth in claim 53 wherein the MeSO4 is ZnSO4.
- 55. An electroplating bath as set forth in claim 53 wherein Me in the MeSO4 is selected from the group consisting of the zinc, aluminum, boron, magnesium, and cesium.
- 56. An electroplating bath as set forth in claim 53 and further comprising an addition agent that serves as both a wetting agent and a complexing agent.
- 57. An electroplating bath as set forth in claim 56 wherein the addition agent is a chemical selected from the group consisting of ED and EDTA.
- 58. An electroplating bath as set forth in claim 57 wherein the addition agent is present in the electroplating bath at a concentration that is between about 0.1-1 ml/l.
- 59. An electroplating bath as set forth in claim 53 wherein the pH of the electroplating bath is about 11.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority from U.S. Provisional application titled “Electrochemical Co-Deposition Of A Copper-Based Alloy Metallization”, Ser. No. 60/091,691, filed May 30, 1998, and from U.S. Provisional Application titled“Metallization Structures for Microelectronic Applications and Process for Forming the Structures”, Ser. No. 60/114,512, filed Dec. 31, 1998.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60091691 |
Jun 1998 |
US |
|
60114512 |
Dec 1998 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09386188 |
Aug 1999 |
US |
Child |
09990019 |
Nov 2001 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/US99/14939 |
Jun 1999 |
US |
Child |
09386188 |
Aug 1999 |
US |