This application is a continuation-in-part of Ser. No. 08/675,559 filed Jul. 3, 1996, now pending and Ser. No. 08/675,093, filed Jul. 11, 1996, now U.S. Pat. No. 5,837,217. The following U.S. patent applications, all owned by Tegal Corporation, are cross-referenced and hereby incorporated by reference: 1. Title: INTEGRATED SEMICONDUCTOR WAFER PROCESSING SYSTEM 2. Title: PLASMA ETCH REACTOR AND METHOD 3. Title: PLASMA ETCH REACTOR AND METHOD FOR EMERGING FILMS
Number | Name | Date | Kind |
---|---|---|---|
2468174 | Cotton | Apr 1949 | |
3458817 | Cooper et al. | Jul 1969 | |
4233109 | Nishizawa | Nov 1980 | |
4263088 | Gorin | Apr 1981 | |
4349409 | Shibayama et al. | Sep 1982 | |
4352725 | Tsukada | Oct 1982 | |
4399016 | Tsukada et al. | Aug 1983 | |
4464223 | Gorin | Aug 1984 | |
4579618 | Celestino et al. | Apr 1986 | |
4585516 | Corn et al. | Apr 1986 | |
4889588 | Fior | Dec 1989 | |
4902377 | Berglund et al. | Feb 1990 | |
5181132 | Shindo et al. | Jan 1993 | |
5492855 | Matsumoto et al. | Feb 1996 | |
5498768 | Nishitani et al. | Mar 1996 | |
5565036 | Westendorp et al. | Oct 1996 |
Number | Date | Country |
---|---|---|
0026604A1 | Aug 1981 | EPX |
52-127168 | Oct 1977 | JPX |
59-16334 | Jan 1984 | JPX |
3-129821 | Jun 1991 | JPX |
Entry |
---|
Y. Nishioka, et al., Giga-bit scale dram cell with new simple Ru/(Ba,Sr)Ti) .sub.3 /Ru stacked Capacitors using x-ray lithography, IEDM Tech. Digest, pp. 903-906, 1995. |
A. Yuuki, et al., Novel stacked capacitor technology for 1 Gbit drams with CVD-(Ba,Sr)Ti) .sub.3 thin films on a thick storage node of Ru, IEDM Tech. Digest, pp. 115-118, 1995. |
W.J. Yoo, et al., Control of the pattern slope in .sub.Ar/C12 /O2 plasmas during etching of Pt, 1995 Dry Process Symposium, The Institute of Electrical Engineers of Japan, pp. 191-194 (1995). |
Brochure: The First Low-Pressure High Density Single-Wafer Etch Technology Has a New Name . . . HRe.sub.-, High Density Reflected Electron, Tegal Corporation, 1993. |
V.J. Minkiewicz and B.N. Chapman, Triode plasma etching, Appl.Phys.Lett.34(3); Feb. 1979, p. 192-193. |
B.N. Chapman, Triode Systems for Plasma Etching, IBM Technical Disclosure Bulletin, vol. 21, No. 12, May 1979, IBM Corp. 1979; pp. 5006-5007. |
Number | Date | Country | |
---|---|---|---|
Parent | 675559 | Jul 1996 |