Claims
- 1. A method of forming a micropattern comprising the steps of:
- a first step of forming a resist film by applying, onto a semiconductor substrate, a resist containing a compound which is crosslinked in response to the radiation of an energy beam;
- a second step of selectively exposing said resist film that was formed by said first step by irradiating said resist film with a first energy beam through a mask so that an exposed portion of said resist film is crosslinked;
- a third step of forming a silylated layer in an unexposed portion of said resist film irradiated with the first energy beam by supplying a silylating agent to a surface of said resist film;
- a fourth step of entirely irradiating said resist film including said silylated layer with a second energy beam so as to increase concentration of silicon in said silylated layer that was formed by said third step; and
- a fifth step of forming a resist pattern by performing etching with respect to said resist film by using, as a mask, said silylated layer which has been irradiated with said second energy beam.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-153538 |
Jul 1994 |
JPX |
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Parent Case Info
This is divisional of application Ser. No. 08/497,471, filed Jun. 30, 1995, now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
5094936 |
Misium et al. |
Mar 1992 |
|
5215867 |
Stillwagon et al. |
Jun 1993 |
|
5278029 |
Shirai et al. |
Jan 1994 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
5-150459 |
Jun 1993 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Schellekens et al., "Single Level Dry Developable Resist Systems . . . ", SPIE 1989, pp. 1-9. |
Divisions (1)
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Number |
Date |
Country |
Parent |
497471 |
Jun 1995 |
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