Claims
- 1. A method of forming a barrier layer on a substrate comprising the steps of:
selecting at least one precursor material; forming an amorphous layer comprising the precursor atop a substrate; converting at least a portion of the precursor layer; and developing the precursor layer.
- 2. The method of claim 1, further comprising developing away an unconverted portion of the precursor layer with a developer.
- 3. The method of claim 1, wherein the substrate is flexible.
- 4. The method of claim 3, wherein the substrate is plastic.
- 5. The method of claim 1, further comprising selecting the at least one precursor material from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
- 6. The method of claim 1, wherein the barrier layer is transparent.
- 7. A photoresist-free method of forming a barrier layer on a substrate, comprising the steps of:
selecting at least one precursor material; forming a layer comprising the unconverted precursor atop the substrate; exposing at least a portion of the unconverted precursor layer to electromagnetic radiation; substantially removing at least a portion of the unconverted precursor layer to form an amorphous film with barrier layer properties; wherein said substrate is flexible.
- 8. The method of claim 7, further comprising converting with an energy source selected from light, electron beam irradiation, ion beam irradiation, and mixtures thereof.
- 9. The method of claim 8, further comprising substantially removing at least a portion of the unconverted precursor layer by using a developer.
- 10. The method of claim 7, further comprising selecting the at least one precursor material from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
- 11. A barrier layer for use in an organic light emitting device formed by:
selecting at least one precursor material; forming a layer comprising the unconverted precursor atop the substrate; exposing at least a portion of the unconverted precursor layer to electromagnetic radiation; substantially removing at least a portion of the unconverted precursor layer to form an amorphous film with environmental barrier layer properties substantially preventing the ingress of oxygen and water vapor from the environment.
- 12. The barrier layer of claim 11, further comprising converting with an energy source selected from light, electron beam irradiation, ion beam irradiation, and mixtures thereof.
- 13. The barrier layer of claim 11, further comprising substantially removing at least a portion of the unconverted precursor layer by using a developer.
- 14. The barrier layer of claim 11, further comprising selecting the at least one precursor material from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
- 15. The barrier layer of claim 11 wherein said substrate is flexible.
- 16. The barrier layer of claim 11 wherein said barrier layer is transparent.
- 17. The method of claim 1, wherein the barrier layer is formed at about ambient temperature.
- 18. The method of claim 7, wherein the barrier layer is formed at about ambient temperature.
- 19. The barrier layer of claim 11, wherein the barrier layer is formed at about ambient temperature.
- 20. The barrier layer of claim 11, wherein the barrier layer is TiO2.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This is a continuation-in-part of copending application Ser. No. 09/875,115 to Maloney et al., published as U.S. Ser. No. 2002/0076495, that was filed Jun. 6, 2001 and is entitled “Method of Making Electronic Materials,” which claims priority to provisional application no. 60/209,947, filed Jun. 6, 2000, both of which are hereby incorporated by reference in their entirety.
Provisional Applications (1)
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Number |
Date |
Country |
|
60209947 |
Jun 2000 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09875115 |
Jun 2001 |
US |
Child |
10442860 |
May 2003 |
US |