Claims
- 1. A method of manufacturing a semiconductor device comprising:forming at least one electrode pad over a semiconductor substrate; providing an opening to a surface portion of the electrode pad after forming a passivation film over a surface of the semiconductor substrate and that of the electrode pad; forming a metal film over the surface of the electrode pad at an area of the opening and over the passivation film near the opening; providing a bump electrode over the metal layer; forming an organic insulating film over the bump electrode and passivation film; etching back the organic insulating film to allow a top area of the bump electrode to be more projected than a top area of the organic insulating film; and joining a lead by heat and pressure to the top area of the bump electrode which is more projected than the top area of the organic insulating film.
- 2. The method according to claim 1, wherein the organic insulating film is etched back so that a height of the portion of the bump electrode projecting above a top surface of the organic insulating film is about 4 μm.
- 3. The method according to claim 1, wherein the organic insulating film is etched back to have a thickness in a range of from about 4 μm to about 5 μm.
- 4. The method according to claim 1, wherein said electrode pad contains aluminum.
- 5. The method according to claim 1, wherein said passivation film contains an insulator selected from the group consisting of PSG and silicon nitride.
- 6. The method according to claim 1, wherein said metal layer contains Pd, Ni and Ti.
- 7. The method according to claim 1, wherein said metal layer has a thickness of about 4000 angstroms.
- 8. The method according to claim 1, wherein the organic insulating film has a thickness being at least about 20% of a thickness of said bump electrode.
- 9. The method according to claim 1, wherein said forming the organic insulating film includes:applying a resin solution over the bump electrode and passivation film; and drying and solidifying the resin solution to form a resin film over the bump eletrode and passivation film; and wherein said etching back the organic insulation film further includes finally solidifying said resin film as a protective film after the resin film is etched back to allow the top area of the bump electrode to be more projected from the top area of the resin film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-228343 |
Aug 1992 |
JP |
|
Parent Case Info
This is a divisional of application Ser. No. 08/409,933, filed Mar. 23, 1995, now U.S. Pat. No. 6,404,051, which is a continuation of application Ser. No. 08/075,373, filed Jun. 14, 1993 (abandoned), all of which are incorporated herein by reference.
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Continuations (1)
|
Number |
Date |
Country |
Parent |
08/075373 |
Jun 1993 |
US |
Child |
08/409933 |
|
US |