Claims
- 1. A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, comprising:
(a) introducing into a deposition chamber:
(i) a substrate; (ii) a source precursor comprising titanium in a vapor state having formula (I):Ti(I4—m—n)(Brm)Cl(n) (I)wherein m is an integer from zero to 4, n is an integer from 0 to 2, and m+n is no greater than 4; (iii) a compound comprising silicon in a vapor state; (iv) a reactant gas comprising nitrogen; and (b) maintaining a temperature of the substrate in the chamber at about 70° C. to about 550° C. for a period of time sufficient to deposit the TiSixNy film on the substrate.
- 2. The method according to claim 1, wherein the substrate temperature is about 200 C. to about 450 C.
- 3. The method according to claim 1, wherein the substrate comprises silicon dioxide on silicon.
- 4. The method according to claim 1, wherein the source precursor comprising titanium is TiI4.
- 5. The method according to claim 1, wherein-the reactant gas comprising nitrogen is selected from the group consisting of nitrogen, ammonia, hydrazine and nitrous oxide.
- 6. The method according to claim 5, wherein the reactant gas is ammonia.
- 7. The method according to claim 1, wherein the compound comprising silicon has formula (II):
- 8. The method according to claim 7, wherein the compound comprising silicon in a vapor state is SiI4.
- 9. The method according to claim 1, further comprising introducing into the deposition chamber at least one second gas selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and carbon dioxide.
- 10. The method according to claim 1, further comprising introducing into the chamber a plasma having a plasma power density of about 0.01 W/cm2 to about 10 W/cm2.
- 11. The method according to claim 10, wherein the plasma has a frequency of about 0 Hz to about 108 kHz.
- 12. The method according to claim 1, further comprising applying an electrical bias to the substrate, wherein the electrical bias is at least one of a direct current bias, a low radio frequency bias of less than 500 kHz, a high radio frequency bias of from 500 kHz to 106 kHz, or a microwave frequency bias of from 106 kHz to about 108 kHz bias.
- 13. The method according to claim 12, wherein the electrical bias has a power density greater than 0 W/cm2 and less than or equal to about 103 W/cm2.
- 14. A method for forming a film comprising titanium, nitrogen and silicon by atomic layer chemical vapor deposition comprising:
(a) introducing into a deposition chamber a substrate having a surface, and heating the substrate to a temperature sufficient to allow adsorption of a source precursor comprising titanium onto the substrate surface; (b) introducing the source precursor comprising titanium into the deposition chamber by pulsing the source precursor comprising titanium to expose the substrate surface to the source precursor comprising titanium for a period of time sufficient to form an adsorbed layer of the source precursor comprising titanium or an intermediate thereof on the substrate surface; (c) introducing a first purging gas into the deposition chamber by pulsing for a period of time sufficient to remove unadsorbed source precursor comprising titanium or the intermediate thereof; (d) introducing a gas comprising nitrogen capable of reacting with the adsorbed source precursor comprising titanium or the intermediate thereof by pulsing the gas comprising nitrogen for a period of time sufficient to react with the adsorbed source precursor comprising titanium or the intermediate thereof in a first reaction, thereby forming a first reaction product on the substrate surface; (e) introducing an inert gas into the deposition chamber by pulsing the inert gas for a period of time sufficient to remove the gas comprising nitrogen; (f) introducing a compound comprising silicon into the deposition chamber by pulsing the compound comprising silicon for a period of time sufficient to allow adsorption of the compound comprising silicon on the first reaction product on the substrate surface; (g) introducing a second purging gas into the deposition chamber by pulsing the purging gas for a period of time sufficient to remove unadsorbed compound comprising silicon; (h) introducing a gas comprising nitrogen capable of reacting with the adsorbed compound comprising silicon by pulsing the gas comprising nitrogen for a period of time sufficient to react the gas comprising nitrogen with the compound comprising silicon that has adsorbed on the first reaction product in a second reaction, thereby forming a second reaction product on the first reaction product on the surface of the substrate; and (i) introducing, a third purging gas into the deposition chamber for a period of time sufficient to remove the gas comprising nitrogen.
- 15. The method according to claim 14, wherein the substrate temperature is about 25° C. to about 550° C.
- 16. The method according to claim 14, wherein the source precursor comprising titanium has formula (I):
- 17. The method according to claim 14, wherein the compound comprising silicon has formula (II):
- 18. The method according to claim 14, wherein steps (b) through (i) are repeated until a film comprising titanium, nitrogen and silicon having a thickness measured transversely across the film no greater than about 10 μm is formed.
- 19. The method according to claim 14, wherein the purging gas is selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and carbon dioxide.
- 20. The method according to claim 14, wherein the gas comprising nitrogen is selected from the group consisting of nitrogen, ammonia, hydrazine, and nitrous oxide.
- 21. The method according to claim 14, wherein the period of time for pulsing the source precursor comprising titanium is about 0.5 seconds to about 100 seconds.
- 22. The method according to claim 14, wherein the period of time for pulsing the compound comprising silicon is about 0.5 seconds to about 100 seconds.
- 23. The method according to claim 14, wherein the period of time for pulsing the gas comprising nitrogen is about 0.5 seconds to about 100 seconds in steps (d) and (h).
- 24. The method according to claim 14, wherein the period of time for pulsing the purging gas is about 0.75 seconds to about 500 seconds in steps (c), (g) and (i).
- 25. A coated substrate, comprising a substrate coated on at least one side with a TiSixNy film, wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, and where the TiSixNy film is a reaction product of a source precursor comprising titanium, a compound comprising silicon and a gas comprising nitrogen.
- 26. A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, comprising:
(a) introducing into a deposition chamber:
(i) a substrate; (ii) a source precursor comprising titanium in a vapor state having formula (I):Ti(I4—m—n)(Brm)Cl(n) (I)wherein m is an integer from zero to 3, n is an integer from 0 to 2, and m+n is no greater than 3; (iii) a compound comprising silicon in a vapor state having formula (II);Si(I4—m—n—p)(Brm—p)Cl(n—p)(Rp) (II)wherein m is an integer from 0 to 3, n is an integer from 0 to 3, p is an integer from 0 to 3, m+n+p is no greater than 3, and R is selected from a group consisting of hydrogen and lower alkyl. (iv) a reactant gas comprising nitrogen; and (b) maintaining a temperature of the substrate in the chamber at about 70° C. to about 550° C. for a period of time sufficient to deposit the TiSixNy film on the substrate.
- 27. A method for forming a film comprising titanium, nitrogen and silicon by atomic layer chemical vapor deposition comprising:
(a) introducing into a deposition chamber a substrate having a surface, and heating the substrate to a temperature sufficient to allow adsorption of a source precursor comprising titanium onto the substrate surface; (b) introducing the source precursor comprising titanium into the deposition chamber by pulsing the source precursor comprising titanium to expose the substrate surface to the source precursor comprising titanium for a period of time sufficient to form an adsorbed layer of the source precursor comprising titanium or an intermediate thereof on the substrate surface, wherein the source precursor comprising titanium has formula (I)Ti(I4—m—n)(Brm)Cl(n) (I)wherein m is an integer from 0 to 3, n is an integer from 0 to 2, and m+n is no greater than 3; (c) introducing a first purging gas into the deposition chamber by pulsing for a period of time sufficient to remove the unadsorbed source precursor comprising titanium or the intermediate thereof; (d) introducing a gas comprising nitrogen capable of reacting with the source precursor comprising titanium or the intermediate thereof adsorbed on the substrate surface by pulsing the gas comprising nitrogen for a period of time sufficient to react with the adsorbed source precursor comprising titanium or the intermediate thereof in a first reaction, thereby forming a first reaction product on the substrate surface; (e) introducing an inert gas into the deposition chamber by pulsing the inert gas for a period of time sufficient to remove the gas comprising nitrogen; (f) introducing a compound comprising silicon into the deposition chamber by pulsing the compound comprising silicon for a period of time sufficient to allow adsorption of the compound comprising silicon on the first reaction product on the substrate surface, wherein the compound comprising silicon has formula (II)Si(I4—m—n—p)(Brm—p)Cl(n—p)(Rp) (II)wherein m is an integer from 0 to 3, n is an integer from 0 to 3, p is an integer from 0 to 3, m+n+p is no greater than 3, and R is selected from the group consisting of hydrogen and lower alkyl.; (g) introducing a second purging gas into the deposition chamber by pulsing the purging gas for a period of time sufficient to remove the unadsorbed compound comprising silicon; (h) introducing a gas comprising nitrogen capable of reacting with the compound comprising silicon that has adsorbed on the first reaction product by pulsing the gas comprising nitrogen for a period of time sufficient to react the gas comprising nitrogen with the compound comprising silicon that has adsorbed on the first reaction product in a second reaction, thereby forming a second reaction product on the first reaction product on the surface of the substrate; and (i) introducing a third purging gas into the deposition chamber for a period of time sufficient to remove the gas comprising nitrogen.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional Application No. 60/196,798, filed Apr. 13, 2000.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60196798 |
Apr 2000 |
US |
Continuations (1)
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Number |
Date |
Country |
Parent |
09835271 |
Apr 2001 |
US |
Child |
10209153 |
Jul 2002 |
US |