Embodiments described herein generally relate to a semiconductor device fabrication process, and more particularly, to pre-bonding inspection in a chip-to-substrate hybrid bonding process.
Chip-to-substrate (C2S) hybrid bonding is a packaging and chip-stacking technique in which pre-diced chiplets are precisely fused onto a larger substrate. Unlike previous bonding techniques, metallic interconnects (e.g., copper) are embedded both in dielectric layers (e.g., SiOx) of a chiplet and in dielectric layers on a substrate to which the chiplet is bonded. When brought into contact, the dielectric layers of the chiplet and on the substrate weakly bond with one another almost instantly. A subsequent high-temperature annealing step is then required to fuse of the metallic interconnections, as well as strengthening the bond between the dielectric layers.
The presence of point defects such as particles, chips, cracks, or excessive topographical variations on surfaces of the chiplet and/or the substrate, adversely affect bond quality and give rise to post-bonding defects. These post-bonding defects generally manifest as air gaps of various sizes that impede proper interconnect formation, adversely impact yield, and result in costly wastage of fully manufactured chiplets/substrate. This wastage is particularly severe in use cases where a single substrate may host multiple chiplets (either stacked side-by-side on the substrate, or one-atop-another). However, a pre-bonding inspection to identify such small point defects (e.g., hundreds of nanometers) has been a challenge since optical signals from small point defects is buried in large optical signal from features (e.g., metallic interconnects) in certain geometrical patterns formed in the large substrate having a width or diameter of about 300 mm.
Accordingly, there is a need for a pre-bonding inspection system that can effectively detect small pre-bonding point defects while reducing the obscuring effect of signals generated from geometrical patterns formed on a substrate.
Embodiments of the present disclosure provide an optical inspection system for pre-bonding inspection. The optical inspection system includes a stage having an upper surface on which a sample to be inspected is placed, a sensor, a plurality of optical assemblies, each optical assembly of the plurality of optical assemblies including an optical head having optics to direct a sample field-of-view (FOV) to a portion of a surface of the sample on the stage, a first external light source configured to illuminate the surface of the sample at a first oblique angle to the surface of the sample on the stage, a second external light source configured to illuminate the surface of the sample at a second oblique angle to the surface of the sample on the stage, a focusing lens to focus a first optical image of the portion of the surface of the sample generated by the first external light source, and a second optical image of the portion of the surface of the sample generated by the second external light source onto a segment of the sensor, and a controller configured to combine the first optical image and the second optical image generated by each optical assembly of the plurality of optical assemblies, and generate a map of point defects on the surface of the sample.
Embodiments of the present disclosure also provide a method of pre-bonding inspection. The method includes illuminating a surface of a sample by a first light source at a first oblique angle to the surface of the sample and by a second light source at a second oblique angle to the surface of the sample, the surface of the sample having a two dimensional (2D) periodic pattern and defects, acquiring a first optical image generated by the first light source and a second optical image generated by the second light source, and acquiring an optical image of point defects on the surface of the sample specifying locations of the point defects on the surface of the sample, by combining the first optical image and the second optical image.
Embodiments of the present disclosure further provide a method of chip-to-substrate hybrid bonding. The method includes performing a pre-bonding inspection process on a substrate die having metallic bond pads, and a chiplet having metallic bond pads, including generating dual optical images of a surface of the substrate die by dual-directional illumination, wherein each optical image of the dual optical images are formed using a different directional illumination of the surface of the substrate die, generating a composite optical image of point defects on the surface of the substrate die by combining the dual optical images of the surface of the substrate die, generating dual optical images of a surface of the chiplet by dual-directional illumination, wherein each optical image of the dual optical images are formed using a different directional illumination of the surface of the chiplet, and generating a composite optical image of point defects on the surface of the chiplet by combining the dual optical images of the surface of the chiplet, and inspecting the generated composite optical images, wherein inspecting the generated composite optical images includes at least one of determining a location of at least one of the point defects on the surface of the substrate die based on the composite optical image of the point defects on the surface of the substrate die, and determining a location of at least one of the point defects on the surface of the chiplet based on the composite optical image of the point defects on the surface of the chiplet.
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of the scope of the disclosure, as the disclosure may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. In the figures and the following description, an orthogonal coordinate system including an X-axis, a Y-axis, and a Z-axis is used. The directions represented by the arrows in the drawings are assumed to be positive directions for convenience. It is contemplated that elements disclosed in some embodiments may be beneficially utilized on other implementations without specific recitation.
The embodiments described herein provide systems and methods for performing an optical inspection process to detect small point defects on a chiplet and/or a substrate die to which the chiplet is bonded. In the systems described herein, a surface of a sample (e.g., a chiplet, a substrate die, or a substrate die with a chiplet bonded thereto) is illuminated at two or more different oblique angles and optical images generated by illumination at the two or more different oblique angles are combined. In the combined optical image, optical signal from features (such as metallic bond pads) in a geometrical pattern (e.g., a circular pattern) on a substrate die (e.g., 300 mm wafer) is eliminated or reduced, and thus signal from small defects (e.g., hundreds of nanometers) is enhanced relative to the features. A map of the defects on the surface of the sample generated from the combined optical image can be used to identify locations of such small defects and determine corrective actions to perform during a chip-to-substrate hybrid bonding process.
As shown in
The method 100 begins with block 110, in which a pre-bonding inspection process is performed on a surface of the substrate die 202 and on a surface of the chiplet 204, to detect point defects, such as chips, cracks, scratches, organic residues, or other particles positioned on the chiplet 204, and excessive topological variations on the chiplet 204 or the substrate die 202.
As described in detail below (as the method 600), a pre-bonding inspection includes generating two or more optical images of a surface of a sample (e.g., a surface of the substrate die 202, a surface of the chiplet 204) by use of at least dual-directional illumination (e.g., illumination of the surface of the sample at two different oblique angles to the surface of the sample), and subsequently generating a composite optical image of point defects on the surface of the sample by combining the optical images of the surface of the sample, in which optical signal from features in a two dimensional (2D) periodic pattern, such as the metallic bond pads 208 on the substrate die 202 and the metallic bond pads 214 on the chiplet 204, can be eliminated or reduced. The composite optical image of point defects of the surface of the sample is then reconstructed to generate a map of point defects on the surface of the sample, specifying locations of the point defects on the surface of the sample. The generated map will include information relating to the relative position of the defects found on or within the sample based on pixel coordinate data generated by the optical sensor based on the received optical signal. In some embodiments, the system controller generates a 2D map of the defects found on or within a sample. The generated 2D map will contain the position information (e.g., X-Y position information) for the various defects, which can then be used to perform a corrective process. In some embodiments, the optical sensor is a digital image sensor, such as a charge-coupled device (CCD) or an active-pixel sensor (CMOS sensor).
In block 120, a corrective process is performed based on the composite optical image specifying locations of point defects on the surface of the substrate die 202 and on the surface of the chiplet 204. The corrective process may include adding or modifying a pre-cleaning process on the surface of the substrate die 202 and/or the surface of the chiplet 204 to remove particles prior to a boding process, reducing bonding pressures for scratched chiplets in a bonding process to reduce chiplet cracking, depositing additional gapfill material on the surface of the substrate die 202 and/or the surface of the chiplet 204 after a bonding process to ensure coverage of varying chiplet heights, or halting the chip-to-substrate hybrid bonding process, and removing the chiplet 204 for further steps of the chip-to-substrate hybrid bonding process. The corrective process may further include a feed backwards into potentially defective processes outside of a bonder (e.g. CMP, dicing) as a function of wafer location, or time, creating metrics for initial setup, tool qualification and tool-to-tool matching, prompting tool maintenance and re-qualification as a function of increased defectivity over time.
In block 130, an alignment process is performed to align the substrate die 202 and the chiplet 204 such that the metallic bond pads 208 of the substrate die 202 are aligned with the metallic bond pads 214 of the chiplet 204.
In block 140, a bonding process is performed to bring the surface of the substrate die 202 and the surface of the chiplet 204 into contact. When brought into contact, the dielectric layer 206 of the substrate die 202 and the dielectric layer 212 of the chiplet 204 weakly bond to one another.
In block 150, an annealing process is performed to fuse the metallic bond pads 208 of the substrate die 202 and the metallic bond pads 214 of the chiplet 204 together. A high temperature anneal step fuses the metallic bond pads 208 and the metallic bond pads 214, as well as strengthen the bonding of the dielectric layer 206 of the substrate die 202 and the dielectric layer 212 of the chiplet 204. Electrical circuits (not shown) on the bottom of the substrate die 202 are then connected to electrical circuits 218 formed in the chiplet 204.
During the chip-to-substrate hybrid bonding process, the presence of point defects on the chiplet 204 or the substrate die 102, affect fidelity of the chip-to-substrate hybrid bonding and give rise to post-bonding defects. The post-bonding defects generally manifest as air gaps that impede proper interconnect formation or form broken circuits, which will adversely impact device yield, and result in the costly need to scrap the fully manufactured chiplet/substrate dies. The created waste is particularly severe in use cases where a single substrate die 202 may host multiple chiplets (either stacked side-by-side on the substrate, or one-atop-another).
The embodiments described herein provide an optical inspection system that can effectively detect point defects while eliminating or reducing the effect of the optical signal received from background (e.g., optical signals from the substrate having features in a periodic pattern formed thereon), such that the point defects can be addressed and/or resolved during a chip-to-substrate hybrid bonding process.
The motion assembly 404 can move the stage 402 in multiple axes to allow complete scanning of a surface of the sample 300. In some embodiments, the stage 402 is a 4-axis stage (i.e., X, Y, Z, Theta motion). Each optical head 408 can also optionally contain an independent Z-positioner (e.g., motor-based, or piezo, not shown in
Each optical assembly 406 includes an illumination system (e.g., one or more light sources internal or external to the optical assembly 406). In some embodiments, the optical assembly 406 also includes a Z-positioner (e.g., based on a motor, piezo, liquid lens, or motorized lens unit) to compensate for different height ranges on the surface of the sample 300. The optical assembly 406 has a sample field-of-view (FOV) 414 that is focused on a portion of the surface of the sample 300 having a sample FOV width 414W of between about 1 mm and about 5 mm in some embodiments. A distance 416 between the optical head 408 and the surface of the sample 300 in the Z-direction (orthogonal to the surface of the sample 300 and the upper surface of the stage 402) can be adjusted by the motion assembly 404 as needed (e.g., to maintain the distance 416 within a focusing range of the optical assembly 406, to clear maximum height on the surface of the sample 300). The optical assembly 406 may have a width 406W of about 30 mm and about 80 mm. A spacing 406S between the adjacent optical assemblies 406 may be between about 1 mm and about 20 mm.
The optical assembly 406 transmits an image of a portion, having the sample FOV width 414W, of the surface of the sample 300 through the optical assembly 406 and onto a segment of the TDI linear sensor 410 via a focused TDI FOV 418. In some embodiments, the focused TDI FOV 418 is focused at a segment of the TDI linear sensor 410 having a TDI FOV width 418W of between about 5 mm and about 30 mm depending on the magnification capabilities of the optical assembly 406. The surface of the sample 300 may have varying Z-heights (e.g., a chiplet 204, a shorter chiplet 304, no chiplets) and require different focus planes or adjustments of the stage 402 along the Z-axis. In some embodiments, each optical head 408 maps to a different location along the X-axis and a different location on the surface of the sample 300 with each optical assembly 406 independently focused on the surface of the sample 300 underneath.
The TDI linear sensor 410 may have a length L along the X-axis of between about 10 mm and about 160 mm. The number of pixels along the length L of the TDI linear sensor 410 that are used to receive an optical image of the surface of the sample 300 corresponds to an available number of portions of the surface of the sample 300, each having the sample FOV width 414W. A sample 300 on the stage 402 is moved by the motion assembly 404 back and forth in the X-direction along the length L of the TDI linear sensor 410 and imaged N times accumulatively by the TDI linear sensor 410 (e.g., time delay integration (TDI) scanning), increasing the number of photons collected for a given sample and improving signal-to-noise (SNR) without requiring hesitation over the sample 300 (continuous imaging).
The controller 412 is in communication with the motion assembly 404 and can cause the motion assembly 404 to move the stage 402, for example, back and forth in the X-direction to continuously scan the surface of the sample 300, and in the Z-direction to maintain the distance 416 between the optical head 408 and the surface of the sample 300 within a focusing range of the optical assembly 406. The controller 412 can also communicate with the optical assemblies 406 to facilitate in adjusting illumination, focus, and other optical assembly parameters. The controller 412 may also receive and store raw images from the TDI linear sensor 410 and process the stored raw images (e.g., combine the stored raw images) and/or provide control the TDI linear sensor 410 as needed. The controller 412 may directly control the optical inspection system 400, or alternatively control other controllers (e.g., computers) associated with the optical inspection system 400. In operation, the controller 412 enables data collection and feedback from the optical inspection system 400 to optimize performance of the optical inspection system 400 and to control the process flows according to the methods described herein.
The controller 412 generally includes a central processing unit (CPU) 420, a memory 422, and a support circuit 424. The CPU 420 may be any form of a general-purpose computer processor that can be used in an industrial setting. The support circuit 424 is coupled to the CPU 420 and may comprise a cache, clock circuits, input/output subsystems, power supplies, and the like. Software routines, such as the process flows according to the methods as described herein may be stored in the memory 422 and, when executed by the CPU 420, transform the CPU 420 into a specific purpose computer as the controller 412. The software routines may also be stored and/or executed by a second controller (not shown) that is located remotely from the optical inspection system 400.
The optical head 408 has optics 502 that aid in directing the sample FOV 414 to a portion, having the sample FOV width 414W, of the surface of the sample 300 to obtain an optical image 504 on a segment of the TDI linear sensor 410.
The optical assembly 406A shown in
The optical assembly 406B shown in
A Z-positioner 512 is used to make high-speed changes to allow for focus of the sample FOV 414 on the surface of the sample 300 as the sample 300 moves under the optical inspection system 400. In some embodiments, the Z-positioner 512 may use a motor to move the assembly, may use an electrically tunable lens assembly or piezo. The optical image 504 traverses through the optical assembly 406 to a focusing lens 514 that focuses the optical image 504 onto a segment of the TDI linear sensor 410.
In block 610, a surface of a sample 300 is illuminated at two different oblique angles to the surface of the sample 300 from two external light sources, such as the first external light source 506B and the second external light source 506C, as shown in
In block 620, an optical image 504B generated by the first external light source 506B and an optical image 504C generated by the second external light source 506C in the TDI linear sensor 410 are acquired and stored by the controller 412. In some embodiments, a time delay integration (TDI) scanning of the surface of the sample 300 is used to generate the optical image 504B and the optical image 504C.
In an example of a sample 300 having a substrate die 202 with an array of circular metallic bond pads 208 formed thereon, which can be represented by a two dimensional (2D) periodic pattern f(x, y) with each bond pad 208 having a circular symmetry, an optical image through a lens (e.g., the splitter 510) corresponds to an electric field distribution at a back focal plane of the lens formed on the TDI linear sensor 410. The electric field distribution is proportional to the Fourier transform F(ux, uy) of the initial 2D periodic pattern f(x, y) of the bond pads 208. The lens itself can capture a portion of that electric field distribution to a degree related to numerical aperture (NA) and wavelength of the light reaching the lens. By illuminating this pattern f(x, y) with light (e.g., a plane- or quasi-plane wave) at an oblique angle to the surface of the sample 300, the electric field distribution at the back focal plane of the lens will be shifted from F(ux, uy) to F(ux−M(θ, φ), uy−M(θ, φ)), where M(θ, φ) is a function that depends on the azimuthal θ and polar φ angles. When this technique is applied to an array of circular bond pads disposed in a 2D periodic pattern f(x, y) with a circular symmetry (e.g., the periodic array of bond pads 208), an optical image includes a brightness distribution akin to a dipole 702 that are formed at the edges of each individual metallic bond pad 208, as shown in
In block 630, the optical image 504B and the optical image 504C are combined, by the controller 412, to generate a composite optical image of point defects on the surface of the sample, specifying location of the detected point defects on the surface of the sample 300. By combining these two separate optical images 504B and 504C that were taken with different directions of illumination (for example, taking the minimum value at each pixel in the optical images 504B and 504C, or taking the product of optical images 504B and 504C), by the controller 412, the optical signal generated by the periodic pattern f(x, y) (e.g., the array of circular metallic bond pads 208) can be reduced, while maintaining the optical signal generated by point defects (
As noted above, the composite optical image generated at block 630 can then be used to generate a map of the point defects found on the surface of the sample, which specifies the locations of one or more point defects found on the surface of the sample. The generated map will include information relating to the relative position of the defects found on or within the sample based on pixel coordinate data found within the optical images generated by the optical sensor. The generated maps can then be used to take a corrective action relating to the sample as discussed above.
The embodiments described herein provide systems and methods for pre-bonding inspection to identify point defects on a surface of a chiplet and/or a surface of a substrate die to which the chiplet is to be bonded. In the systems described herein, a surface of a sample (e.g., a chiplet, a substrate die, or a substrate die with a chiplet bonded thereto) is illuminated at two or more different oblique angles and optical images generated by illumination at different oblique angles are combined. In the combined optical image, optical signal from features (such as metallic bond pads) in a geometrical pattern (e.g., a circular pattern) on a substrate die (e.g., 300 mm wafer) is eliminated or reduced, and thus signal from small defects (e.g., hundreds of nanometers) is enhanced. A map of small defects on the surface of the sample generated from the combined optical image can be used to identify locations of such small defects and determine corrective actions to perform during a chip-to-substrate hybrid bonding process.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
This application claims priority to U.S. Provisional Application Ser. No. 63/536,366 filed Sep. 1, 2023, which is herein incorporated by reference in its entirety.
Number | Date | Country | |
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63536366 | Sep 2023 | US |