The present disclosure relates to a power module structure, and, in particular, to a power module structure with a vertical signal conduction path.
At present, in a power module, a nail frame connected to a base substrate is often used as a signal conduction path. After glue is filled in and the module is sealed, the pins of the nail frame extend outwards to conduct current and signals as a connection to a system.
However, the nail frame increases the overall size of the power module, and the circuit design is more complicated. The orientation and size of pins of the nail frame need to be considered.
In accordance with one embodiment of the present disclosure, a power module structure is provided. The power module structure includes a substrate, a chip, a first metal structure, a second metal structure and a packaging material. The chip, the first metal structure and the second metal structure are disposed on the substrate. From a cross-sectional view, the width of the first metal structure is greater than the width of the second metal structure. The packaging material covers the substrate and the chip, and the portions of the first metal structure and the second metal structure are exposed from the upper surface of the packaging material.
In some embodiments, the substrate includes aluminum oxide. In some embodiments, the chip includes a power component. In some embodiments, the first metal structure and the second metal structure include copper, silver or aluminum.
In some embodiments, the upper surfaces of the first metal structure and the second metal structure are on the same plane as the upper surface of the packaging material. In some embodiments, the upper surfaces of the first metal structure and the second metal structure are higher than the upper surface of the packaging material. In some embodiments, the upper surfaces of the first metal structure and the second metal structure are lower than the upper surface of the packaging material.
In some embodiments, the power module structure further includes another first metal structure disposed on the substrate. A portion of the other first metal structure is exposed from the upper surface of the packaging material. In some embodiments, from a top view, the first metal structure and the other first metal structure have different areas. In some embodiments, from a top view, the first metal structure and the other first metal structure have different shapes. In some embodiments, from a top view, the first metal structure and the other first metal structure include a rectangle, a triangle or a circle in shape.
In some embodiments, from a cross-sectional view, the first metal structure includes a rectangle or an irregular shape. In some embodiments, the first metal structure further includes a through hole.
In the power module structure of the present disclosure, the first metal structure and the second metal structure for signal conduction are disposed on the substrate and exposed from the upper surface of the packaging material to conduct signals from the substrate to the surface of the packaging material. Then, the first metal structure and the second metal structure are connected to a power pin and a signal pin respectively through the post-processes. In the present disclosure, the circuit can be shortened to a minimum by conducting signals vertically to achieve rapid conduction of current and signals. Since the first metal structure is a solid structure, large current transmission can be achieved. In addition, the relative positional relationship between the first metal structure, the second metal structure and the packaging material in the disclosed power module structure can be appropriately adjusted according to product requirements, and the manufacturing process is simple. Furthermore, the dimension, quantity, position, shape, three-dimensional structure, etc. of the plurality of first metal structures in the disclosed power module structure can also be adjusted appropriately according to product requirements, and the manufacturing process is simple. For example, designing the first metal structure into an I-shape can increase the bonding area and bonding force between the first metal structure and the packaging material. For another example, designing the first metal structure to include a through-hole structure can increase the bonding force between the first metal structure and the packaging material.
The disclosure can be more fully understood from the following detailed description when read with the accompanying figures. It is worth noting that in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
Various embodiments or examples are provided in the following description to implement different features of the present disclosure. The elements and arrangement described in the following specific examples are merely provided for introducing the present disclosure and serve as examples without limiting the scope of the present disclosure. For example, when a first component is referred to as “on a second component”, it may directly contact the second component, or there may be other components in between, and the first component and the second component do not come in direct contact with one another.
It should be understood that additional operations may be provided before, during, and/or after the described method. In accordance with some embodiments, some of the stages (or steps) described below may be replaced or omitted.
In this specification, spatial terms may be used, such as “below”, “lower”, “above”, “higher” and similar terms, for briefly describing the relationship between an element relative to another element in the figures. Besides the directions illustrated in the figures, the components may be used or operated in different directions. When the component is turned to different directions (such as rotated 45 degrees or other directions), the spatially related adjectives used in it will also be interpreted according to the turned position. In some embodiments of the present disclosure, terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
Herein, the terms “about”, “around” and “substantially” typically mean a value is in a range of +/−15% of a stated value, typically a range of +/−10% of the stated value, typically a range of +/−5% of the stated value, typically a range of +/−3% of the stated value, typically a range of +/−2% of the stated value, typically a range of +/−1% of the stated value, or typically a range of +/−0.5% of the stated value. The stated value of the present disclosure is an approximate value. Namely, the meaning of “about”, “around” and “substantially” may be implied if there is no specific description of “about”, “around” and “substantially”.
It should be understood that, although the terms “first”, “second”, “third”, etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another element, component, region, layer, portion or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be appreciated that, in each case, the term, which is defined in a commonly used dictionary, should be interpreted as having a meaning that conforms to the relative skills of the present disclosure and the background or the context of the present disclosure, and should not be interpreted in an idealized or overly formal manner unless so defined.
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In some embodiments, the material of the substrate 12 includes aluminum oxide, but the present disclosure is not limited thereto, and other suitable substrate materials are also applicable to the present disclosure. In some embodiments, when the material of the substrate 12 is aluminum oxide (i.e. ceramic material), the composite plate composed of the substrate 12, the first copper layer 14, and the second copper layer 16 is called a ceramic substrate, as a carrier for the chip 18. The ceramic substrate has high thermal conductivity and electrical insulation properties.
In some embodiments, the chip 18 includes power components, such as high-power components.
In some embodiments, the material of the first metal structure 20 and the second metal structure 22 includes metal materials with high thermal conductivity and electrical conductivity, such as copper, silver, or aluminum, but the present disclosure is not limited thereto, and other suitable metal materials are also applicable to the present disclosure. In some embodiments, the first metal structure 20 is further connected to an external power pin. In some embodiments, the second metal structure 22 is further connected to an external signal pin. In some embodiments, the first metal structure 20 and the second metal structure 22 are disposed vertically on the first copper layer 14 (i.e. on the substrate 12). That is, the first metal structure 20 and the second metal structure 22 are designed as vertical signal conduction paths. The vertical signal conduction path will become the shortest signal conduction path in the module structure, which can achieve rapid conduction of current and signals.
The relative positional relationship between the first metal structure, the second metal structure, and the packaging material in the power module structure will be further illustrated below with reference to the drawings (
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In some embodiments, the material of the substrate 112 includes aluminum oxide, but the present disclosure is not limited thereto, and other suitable substrate materials are also applicable to the present disclosure. In some embodiments, when the material of the substrate 112 is aluminum oxide (i.e. ceramic material), the composite plate composed of the substrate 112, the first copper layer 114, and the second copper layer 116 is called a ceramic substrate, as a carrier for the chip 118. The ceramic substrate has high thermal conductivity and electrical insulation properties.
In some embodiments, the chip 118 includes power components, such as high-power components.
In some embodiments, the material of the first metal structure 120 and the second metal structure 122 includes metal materials with high thermal conductivity and electrical conductivity, such as copper, silver, or aluminum, but the present disclosure is not limited thereto, and other suitable metal materials are also applicable to the present disclosure. In some embodiments, the first metal structure 120 is further connected to an external power pin. In some embodiments, the second metal structure 122 is further connected to an external signal pin. In some embodiments, the first metal structure 120 and the second metal structure 122 are disposed vertically on the first copper layer 114 (i.e. on the substrate 112). That is, the first metal structure 120 and the second metal structure 122 are designed as vertical signal conduction paths. The vertical signal conduction path will become the shortest signal conduction path in the module structure, which can achieve rapid conduction of current and signals.
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The alterations in dimension, quantity, position, and shape of the plurality of first metal structures in the power module structure will be further illustrated below with reference to the drawings (
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In some embodiments, the material of the substrate 412 includes aluminum oxide, but the present disclosure is not limited thereto, and other suitable substrate materials are also applicable to the present disclosure. In some embodiments, when the material of the substrate 412 is aluminum oxide (i.e. ceramic material), the composite plate composed of the substrate 412 and the upper and lower copper layers disposed on the opposite surfaces of the substrate 412 is called a ceramic substrate, as a carrier for the chips (418a, 418b, 418c and 418d). The ceramic substrate has high thermal conductivity and electrical insulation properties.
In some embodiments, the chips (418a, 418b, 418c and 418d) include power components, such as high-power components.
In some embodiments, the material of the first metal structures (420a, 420b and 420c) and the second metal structures (422a and 422b) includes metal materials with high thermal conductivity and electrical conductivity, such as copper, silver, or aluminum, but the present disclosure is not limited thereto, and other suitable metal materials are also applicable to the present disclosure. In some embodiments, the first metal structures (420a, 420b and 420c) are further connected to an external power pin. In some embodiments, the second metal structures (422a and 422b) are further connected to an external signal pin. In some embodiments, the first metal structures (420a, 420b and 420c) and the second metal structures (422a and 422b) are disposed vertically on the substrate 412. That is, the first metal structures (420a, 420b and 420c) and the second metal structures (422a and 422b) are designed as vertical signal conduction paths. The vertical signal conduction path will become the shortest signal conduction path in the module structure, which can achieve rapid conduction of current and signals.
It is worth noting that, in the power module structure 410, according to product requirements, the first metal structures (420a, 420b and 420c) disposed on the substrate 412 can be designed to have different areas, as shown in
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In the power module structure of the present disclosure, the first metal structure and the second metal structure for signal conduction are disposed on the substrate and exposed from the upper surface of the packaging material to conduct signals from the substrate to the surface of the packaging material. Then, the first metal structure and the second metal structure are connected to a power pin and a signal pin respectively through the post-processes. In the present disclosure, the circuit can be shortened to a minimum by conducting signals vertically to achieve rapid conduction of current and signals. Since the first metal structure is a solid structure, large current transmission can be achieved. In addition, the relative positional relationship between the first metal structure, the second metal structure and the packaging material in the disclosed power module structure can be appropriately adjusted according to product requirements, and the manufacturing process is simple. Furthermore, the dimension, quantity, position, shape, three-dimensional structure, etc. of the plurality of first metal structures in the disclosed power module structure can also be adjusted appropriately according to product requirements, and the manufacturing process is simple. For example, designing the first metal structure into an I-shape can increase the bonding area and bonding force between the first metal structure and the packaging material. For another example, designing the first metal structure to include a through-hole structure can increase the bonding force between the first metal structure and the packaging material.
Although some embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. The features of the various embodiments can be used in any combination as long as they do not depart from the spirit and scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods or steps. In addition, each claim constitutes an individual embodiment, and the claimed scope of the present disclosure includes the combinations of the claims and embodiments. The scope of protection of present disclosure is subject to the definition of the scope of the appended claims. Any embodiment or claim of the present disclosure does not need to meet all the purposes, advantages, and features disclosed in the present disclosure.
Number | Date | Country | Kind |
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112150973 | Dec 2023 | TW | national |
This application claims priority of U.S. Provisional Application Ser. No. 63/509,425, filed on Jun. 21, 2023, and priority of Taiwan Patent Application No. 112150973, filed on Dec. 27, 2023, the entirety of which are incorporated by reference herein.
Number | Date | Country | |
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63509425 | Jun 2023 | US |