This application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2023-0164847, filed on Nov. 23, 2023, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.
Along with the rapid development of the electronics industry and demands of users, electronic devices have been gradually miniaturized with high performance. Therefore, along with the miniaturization and high performance of semiconductor packages included in electronic devices, a semiconductor package including a semiconductor chip flip-chip-bonded to a printed circuit board has been developed.
This disclosure relates to a printed circuit board and a semiconductor package including the same, and more particularly, to a printed circuit board for flip chip bonding and a semiconductor package including the printed circuit board and a flip-chip-bonded semiconductor chip. The printed circuit board and semiconductor package may have improved electrical connection reliability.
In an example, there is provided a printed circuit board including a substrate base, a plurality of upper pads on an upper surface of the substrate base and including a plurality of upper connection pads and at least one upper monitoring pad, a plurality of lower connection pads beneath a lower surface of the substrate base, and a substrate wiring structure electrically connecting the plurality of upper connection pads to the plurality of lower connection pads, wherein the at least one upper monitoring pad includes a base pad portion having the same planar shape as each of the plurality of upper connection pads and a protrusion portion extending in a horizontal direction from the base pad portion.
In an example, there is provided a semiconductor package including a printed circuit board including a substrate base, an upper solder resist layer covering an upper surface of the substrate base, a plurality of upper pads on the upper surface of the substrate base, including a plurality of upper connection pads and at least one upper monitoring pad, and not covered by the upper solder resist layer, a plurality of lower connection pads beneath a lower surface of the substrate base, and a substrate wiring structure electrically connecting the plurality of upper connection pads to the plurality of lower connection pads, respectively, a semiconductor chip including a semiconductor substrate and a plurality of chip pads beneath a lower surface of the semiconductor substrate and including a plurality of chip connection pads and at least one chip dummy pad and attached to the printed circuit board such that the plurality of chip pads face the printed circuit board, and a plurality of chip terminals including a plurality of chip connection terminals between the plurality of upper connection pads and the plurality of chip connection pads and at least one chip dummy terminal between the at least one upper monitoring pad and the at least one chip dummy pad, wherein the at least one upper monitoring pad includes a base pad portion having the same planar shape as each of the plurality of upper connection pads and a protrusion portion extending in a horizontal direction from the base pad portion.
In an example, there is provided a semiconductor package including a printed circuit board including a substrate base, an upper solder resist layer covering an upper surface of the substrate base, a lower solder resist layer covering a lower surface of the substrate base, a plurality of upper pads on the upper surface of the substrate base, including a plurality of upper connection pads and a plurality of upper monitoring pads, and uncovered by the lower solder resist layer, a plurality of lower connection pads beneath the lower surface of the substrate base and not covered by the upper solder resist layer, and a substrate wiring structure electrically connecting the plurality of upper connection pads to the plurality of lower connection pads, a semiconductor chip which includes a semiconductor substrate having a semiconductor device and a plurality of chip pads beneath a lower surface of the semiconductor substrate and including a plurality of chip connection pads electrically connected to the semiconductor device and a plurality of chip dummy pads electrically isolated from the semiconductor device, the semiconductor chip being attached to the printed circuit board such that the plurality of chip pads face the printed circuit board, and a plurality of chip terminals including a plurality of chip connection terminals between the plurality of upper connection pads and the plurality of chip connection pads and a plurality of chip dummy terminals between the plurality of upper monitoring pads and the plurality of chip dummy pads, each of the plurality of chip connection terminals and the plurality of chip dummy terminals including an under bump metal (UBM) layer covering at least a portion of a lower surface of a chip pad, a conductive pillar attached beneath the chip pad and the UBM layer, and a conductive cap covering a lower surface of the conductive pillar and fully covering upper surfaces of the plurality of chip pads, wherein each of the plurality of upper monitoring pads includes a base pad portion having the same planar shape as each of the plurality of upper connection pads and a plurality of protrusion portions extending in a horizontal direction from the base pad portion.
Embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:
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For example, the printed circuit board 100 may be a double-sided printed circuit board or a multi-layer printed circuit board. The printed circuit board 100 may include at least one substrate base 110 and a substrate wiring structure 120.
The at least one substrate base 110 may include at least one material selected from among a phenol resin, an epoxy resin, and polyimide. For example, the at least one substrate base 110 may include at least one material selected from among flame retardant 4 (FR-4), tetrafunctional epoxy, polyphenylene ether, epoxy/polyphenylene oxide, bismaleimide triazine (BT), Thermount, cyanate ester, polyimide, and a liquid crystal polymer.
In some implementations, the printed circuit board 100 may include a plurality of substrate bases 110 that are stacked. When the printed circuit board 100 includes a plurality of substrate bases 110 that are stacked, the plurality of substrate bases 110 may include a core layer and at least one prepreg layer stacked on each of the upper and lower surfaces of the core layer. In some implementations, each of the core layer and the at least one prepreg layer may include the same material. The thickness of each of the at least one prepreg layer may be less than the thickness of the core layer.
In the specification, the at least one substrate base 110 or the plurality of substrate bases 110 may indicate all the substrate bases 110 included in the printed circuit board 100, i.e., indicate one substrate base 110 if the printed circuit board 100 includes the one substrate base 110 and indicate a structure with all of two or more substrate bases 110 that are stacked if the printed circuit board 100 includes the two or more substrate bases 110 that are stacked, and the upper surface and the lower surface of the at least one substrate base 110 or the plurality of substrate bases 110 may indicate the upper surface and the lower surface of all the substrate bases 110 included in the printed circuit board 100.
The substrate wiring structure 120 may include a plurality of substrate wiring patterns 122 on the upper surface and the lower surface or in the inside of the at least one substrate base 110 and extending in a horizontal direction and a plurality of substrate via patterns 124 extending in the vertical direction by penetrating at least a portion of the at least one substrate base 110, each substrate via pattern 124 electrically connecting between two substrate wiring patterns 122 at different vertical levels among the plurality of substrate wiring patterns 122. In some implementations, the printed circuit board 100 may include the plurality of substrate bases 110 that are stacked and the plurality of substrate wiring patterns 122 may be on the upper surfaces and the lower surfaces of the plurality of substrate bases 110. For example, some of the plurality of substrate wiring patterns 122 may be between two substrate bases 110 adjacent to each other in the vertical direction among the plurality of substrate bases 110.
The substrate wiring structure 120 may include copper (Cu) or an alloy including Cu. In some implementations, a substrate via pattern 124 may be formed to fill a portion of a via through hole while covering the inner wall of the via through hole that penetrates a substrate base 110 and a via filling insulating layer 128 may fill the via through hole while covering the substrate via pattern 124. For example, the via through hole may be fully filled with the substrate via pattern 124 and the via filling insulating layer 128.
The printed circuit board 100 may further include a solder resist layer 130 covering the upper surface and the lower surface of the at least one substrate base 110. The solder resist layer 130 may include an upper solder resist layer 132 covering the upper surface of the at least one substrate base 110 and a lower solder resist layer 134 covering the lower surface of the at least one substrate base 110.
Portions of substrate wiring patterns 122 on the upper surface of the at least one substrate base 110 may be a plurality of upper pads 122P, respectively. For example, portions of substrate wiring patterns 122 at the highest vertical level may be the plurality of upper pads 122P, respectively. The upper solder resist layer 132 may cover the side surfaces of the substrate wiring patterns 122 on the upper surface of the at least one substrate base 110. Portions of the substrate wiring patterns 122 on the upper surface of the at least one substrate base 110 may not be covered by the upper solder resist layer 132. In some implementations, the upper solder resist layer 132 may cover only a portion of the upper surfaces of the plurality of upper pads 122P. For example, the upper solder resist layer 132 may cover a portion of the upper surface of each of the substrate wiring patterns 122. The uncovered portion of the substrate wiring patterns 122 on the upper surface of the substrate base 110 forms the plurality of upper pads 122P. A plurality of chip terminals 250 may be attached to the plurality of upper pads 122P, respectively.
The plurality of upper pads 122P may include a plurality of upper connection pads 122UP and at least one upper monitoring pad 122MP. The plurality of chip terminals 250 may include a plurality of chip connection terminals 250R and at least one chip dummy terminal 250D. The plurality of chip connection terminals 250R may be attached to the plurality of upper connection pads 122UP, respectively, and the at least one chip dummy terminal 250D may be attached to the at least one upper monitoring pad 122MP.
In some implementations, the plurality of chip terminals 250 may fully cover surfaces (e.g., the upper surfaces of the plurality of upper pads 122P) which are not covered by the upper solder resist layer 132. In some implementations, the plurality of chip connection terminals 250R may fully cover the upper surfaces of the plurality of upper connection pads 122UP, respectively, and the at least one chip dummy terminal 250D may fully cover the upper surface of the at least one upper monitoring pad 122MP. In some implementations, the plurality of chip terminals 250 may not cover portions of the upper surfaces of the plurality of upper pads 122P, which are not covered by the upper solder resist layer 132, respectively.
Portions of substrate wiring patterns 122 beneath the lower surface of the at least one substrate base 110 may be a plurality of lower connection pads 122LP, respectively. For example, portions of substrate wiring patterns 122 at the lowest vertical level may be the plurality of lower connection pads 122LP, respectively. The lower solder resist layer 134 may cover the side surfaces of the substrate wiring patterns 122 beneath the lower surface of the at least one substrate base 110. The portions of the substrate wiring patterns 122 beneath the lower surface of the at least one substrate base 110 may not be covered by the lower solder resist layer 134. In some implementations, the lower solder resist layer 134 may not cover the lower surfaces of the plurality of lower connection pads 122LP. For example, the lower solder resist layer 134 may cover a portion of the lower surface of each of the substrate wiring patterns 122, each including a lower connection pad 122LP, but not cover the other portion of the lower surface of each of the substrate wiring patterns 122. The other portions of the substrate wiring patterns 122, which are not covered by the lower solder resist layer 134, may be the plurality of lower connection pads 122LP. A plurality of package connection terminals 150 may be attached to the plurality of lower connection pads 122LP, respectively. In some implementations, the plurality of package connection terminals 150 may fully cover the surfaces (e.g., the lower surfaces, of the plurality of lower connection pads 122LP) which are not covered by the lower solder resist layer 134, respectively.
Alternatively, portions not covered by the upper solder resist layer 132 among conductive material layers on the upper surface of the at least one substrate base 110 may be referred to as the plurality of upper pads 122P. Those portions connected to the plurality of upper pads 122P and covered by the upper solder resist layer 132 may be referred to as top substrate base patterns 122 among the plurality of substrate wiring patterns 122. Portions not covered by the lower solder resist layer 134 among conductive material layers beneath the lower surface of the at least one substrate base 110 may be referred to as the plurality of lower connection pads 122LP. Only those portions connected to the plurality of lower connection pads 122LP and covered by the lower solder resist layer 134 may be referred to as bottom substrate base patterns 122 among the plurality of substrate wiring patterns 122. That is, the substrate wiring structure 120 including the plurality of substrate wiring patterns 122 and the plurality of substrate via patterns 124 may electrically connect the plurality of upper connection pads 122UP to the plurality of lower connection pads 122LP.
A semiconductor chip 200 may include a semiconductor substrate 210, a wiring layer 220, and a plurality of chip pads 230. The semiconductor substrate 210 may have an active surface and an inactive surface that are opposite to each other. A semiconductor device 205 may be formed on the active surface of the semiconductor substrate 210. The wiring layer 220 may be on the active surface of the semiconductor substrate 210. For example, the wiring layer 220 may cover the active surface of the semiconductor substrate 210. The plurality of chip pads 230 may be on the wiring layer 220. For example, the plurality of chip pads 230 may be beneath the lower surface of the wiring layer 220. The semiconductor chip 200 may have a first surface and a second surface that are opposite to each other. The plurality of chip pads 230 may be on the first surface of the semiconductor chip 200. The second surface of the semiconductor chip 200 may be the inactive surface of the semiconductor substrate 210. The semiconductor chip 200 may be attached onto the printed circuit board 100 by flip chip bonding such that the first surface of the semiconductor chip 200 faces the printed circuit board 100. For example, the semiconductor chip 200 may be attached onto the printed circuit board 100 such that the plurality of chip pads 230 face the printed circuit board 100.
The semiconductor substrate 210 may include a semiconductor material, e.g., a group IV semiconductor material, a group III-V semiconductor material, a group II-VI semiconductor material, or a group II-VI oxide semiconductor material. The semiconductor substrate 210 may include a conductive region, (e.g., an impurity-doped well). The semiconductor substrate 210 may have various device isolation structures, such as a shallow trench isolation (STI) structure.
The semiconductor device 205 including a plurality of individual devices of various types may be formed on the active surface of the semiconductor substrate 210. The plurality of individual devices may include various microelectronic devices, for example, a metal-oxide-semiconductor field effect transistor (MOSFET), such as a complementary metal-oxide-semiconductor (CMOS) transistor, a system large scale integration (LSI), an active device, a passive device, and the like. The plurality of individual devices may be electrically connected to the conductive region of the semiconductor substrate 210. The semiconductor device 205 may further include a conductive wiring or a conductive plug electrically connecting at least two of the plurality of individual devices or electrically connecting the plurality of individual devices to the conductive region of the semiconductor substrate 210. In addition, each of the plurality of individual devices may be electrically isolated from other neighboring individual devices by an insulating layer. The semiconductor device 205 may be a logic device or a memory device. The memory device may be a volatile or nonvolatile memory device.
The wiring layer 220 may be on the active surface of the semiconductor substrate 210. The wiring layer 220 may include a plurality of wiring patterns 222, a plurality of via patterns 224, and an inter-wiring insulating layer 228. The plurality of via patterns 224 may be connected to the upper surfaces and/or the lower surfaces of the plurality of wiring patterns 222. In some implementations, the plurality of wiring patterns 222 may be spaced apart from each other at different vertical levels and each of the plurality of via patterns 224 may connect between wiring patterns 222 at different vertical levels. The plurality of wiring patterns 222 and the plurality of via patterns 224 may be electrically connected to the semiconductor device 205. The inter-wiring insulating layer 228 may surround the plurality of wiring patterns 222 and the plurality of via patterns 224. Each of the plurality of wiring patterns 222 and the plurality of via patterns 224 may include a metal, such as copper (Cu), aluminum (Al), tungsten (W), silver (Ag), gold (Au), titanium (Ti), or tantalum (Ta), or a metal nitride, such as titanium nitride (TiN) or tantalum nitride (TaN), or a combination thereof. The inter-wiring insulating layer 228 may include an insulating material including silicon oxide, silicon nitride, a low-k material, or a combination thereof. The low-k material has a dielectric constant lower than that of silicon oxide.
The plurality of chip pads 230 may include a plurality of chip connection pads 230R and at least one chip dummy pad 230D. The plurality of chip terminals 250 may be connected to the plurality of chip pads 230, respectively. The plurality of chip terminals 250 may be between the plurality of chip pads 230 and the plurality of upper pads 122P, respectively, and electrically connect the at least one semiconductor chip 200 to the printed circuit board 100. The plurality of chip connection terminals 250R may be connected to the plurality of chip connection pads 230R, respectively, and the at least one chip dummy terminal 250D may be connected to the at least one chip dummy pad 230D. The plurality of chip connection terminals 250R may be between the plurality of chip connection pads 230R and the plurality of upper connection pads 122UP, respectively, and the at least one chip dummy terminal 250D may be between the at least one chip dummy pad 230D and the at least one upper monitoring pad 122MP. The plurality of chip connection pads 230R may be electrically connected to the semiconductor device 205. The plurality of chip connection pads 230R may be electrically connected to the wiring layer 220. For example, each of the plurality of chip connection pads 230R may be electrically connected to the semiconductor device 205 via the plurality of wiring patterns 222 and the plurality of via patterns 224. The at least one chip dummy pad 230D may not be electrically connected to the semiconductor device 205. In some implementations, the at least one chip dummy pad 230D may not be electrically connected to the wiring layer 220. For example, the at least one chip dummy pad 230D may not be electrically connected to the plurality of wiring patterns 222 and the plurality of via patterns 224.
In some implementations, the at least one semiconductor chip 200 may include a logic device. For example, the at least one semiconductor chip 200 may be a central processing unit (CPU) chip, a graphics processing unit (GPU) chip, or an application processor (AP) chip. In some implementations, the at least one semiconductor chip 200 may be a memory semiconductor chip including a memory device. For example, the memory device may be a nonvolatile memory device, such as flash memory, phase-change random access memory (PRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FeRAM), or resistive random access memory (RRAM). The flash memory may be, for example, NAND flash memory or V-NAND flash memory. In some implementations, the memory device may be a volatile memory device, such as dynamic random access memory (DRAM) or static random access memory (SRAM). In some implementations, when the semiconductor package 1 includes a plurality of semiconductor chips 200, at least one of the plurality of semiconductor chips 200 may be a CPU chip, a GPU chip, or an AP chip and at least one other of the plurality of semiconductor chips 200 may be a memory semiconductor chip including a memory device.
The semiconductor package 1 may further include, on the printed circuit board 100, a molding layer 300 surrounding the at least one semiconductor chip 200 while covering the upper surface of the printed circuit board 100. For example, the molding layer 300 may be a molding member including an epoxy mold compound (EMC). In some implementations, the molding layer 300 may cover the side surfaces and the upper surface of the at least one semiconductor chip 200. In another embodiment, the molding layer 300 may cover the side surfaces of the at least one semiconductor chip 200 but not cover the upper surface of the at least one semiconductor chip 200. When the molding layer 300 does not cover the upper surface of the at least one semiconductor chip 200, the semiconductor package 1 may further include a heat-dissipating member covering the upper surface of the at least one semiconductor chip 200. The heat-dissipating member may include a heat-dissipating plate, such as a heat slug or a heat sink. In addition, the semiconductor package 1 may further include a thermal interface material (TIM) between the heat-dissipating member and the at least one semiconductor chip 200. The TIM may be formed of a paste, a film, or the like.
In some implementations, an underfill layer 290 surrounding the plurality of chip terminals 250 and filling between the printed circuit board 100 and the at least one semiconductor chip 200 may be between the printed circuit board 100 and the at least one semiconductor chip 200. The underfill layer 290 may include a resin. For example, the underfill layer 290 may be formed of an epoxy resin by a capillary under-fill method. In some implementations, the underfill layer 290 may be mixed with a filler including, for example, silica.
In some implementations, the semiconductor package 1 may not include the underfill layer 290, wherein the molding layer 300 may be formed of a molded under fill (MUF) surrounding the plurality of chip terminals 250 and between the printed circuit board 100 and the at least one semiconductor chip 200.
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Portions of substrate wiring patterns 122 on the upper surface of the at least one substrate base 110 may be the plurality of upper pads 122P, respectively. For example, portions of substrate wiring patterns 122 at the highest vertical level may be the plurality of upper pads 122P, respectively. The plurality of upper pads 122P may not be covered by the upper solder resist layer 132. The plurality of upper pads 122P may include the plurality of upper connection pads 122UP and the at least one upper monitoring pad 122MP.
Each of the plurality of upper connection pads 122UP may have a circular shape in a top view but is not limited thereto. For example, each of the plurality of upper connection pads 122UP may have an oval shape, a rectangular shape, or a rectangular shape with rounded corners. The horizontal width of each of the plurality of upper connection pads 122UP, e.g., the diameter of each of the plurality of upper connection pads 122UP when the plurality of upper connection pads 122UP have a circular shape in a top view, may be a first horizontal width W1. For example, the first horizontal width W1 may be about 40 μm to about 80 μm.
The at least one upper monitoring pad 122MP may include a base pad portion BP and at least one protrusion portion PP. In some implementations, the at least one upper monitoring pad 122MP may include a base pad portion BP and four protrusion portions PP.
The base pad portion BP may have a circular shape in a top view but is not limited thereto. For example, the base pad portion BP may have an oval shape, a rectangular shape, or a rectangular shape with rounded corners. An upper connection pad 122UP may have generally the same shape as the base pad portion BP of an upper monitoring pad 122MP in a top view. For example, when the upper connection pad 122UP has a circular shape in a top view, the base pad portion BP of the upper monitoring pad 122MP may also have a circular shape in a top view. The horizontal width of the base pad portion BP of the at least one upper monitoring pad 122MP (e.g., the diameter of the base pad portion BP when the base pad portion BP of the at least one upper monitoring pad 122MP has a circular shape in a top view) may be a second horizontal width W2. In some implementations, the first horizontal width W1 may be substantially the same as the second horizontal width W2. For example, the second horizontal width W2 may be about 40 μm to about 80 μm.
A protrusion portion PP may extend outward from the base pad portion BP in the horizontal direction. For example, the protrusion portion PP may generally have a bar shape in a top view. The protrusion portion PP may have an extension length PL that is less than the second horizontal width W2. For example, the extension length PL of the protrusion portion PP may be about 5 μm to about 25 μm. When the upper monitoring pad 122MP includes four protrusion portions PP extending from the base pad portion BP, the four protrusion portions PP may extend along four extension lines extending in different directions at equal angles therebetween from the center of the base pad portion BP in a top view, respectively. For example, the four protrusion portions PP may extend along four extension lines extending at 90-degree angles therebetween from the center of the base pad portion BP in a top view, respectively.
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The printed circuit board 100 may include the at least one substrate base 110, the substrate wiring structure 120, and the solder resist layer 130. The substrate wiring structure 120 may include the plurality of substrate wiring patterns 122 on the upper surface and the lower surface or in the inside of the at least one substrate base 110 and extending in the horizontal direction and may also include the plurality of substrate via patterns 124 extending in the vertical direction by penetrating at least a portion of the at least one substrate base 110, each substrate via pattern 124 electrically connecting two substrate wiring patterns 122 located at different vertical levels among the plurality of substrate wiring patterns 122. The solder resist layer 130 may include the upper solder resist layer 132 covering the upper surface of the at least one substrate base 110 and the lower solder resist layer 134 covering the lower surface of the at least one substrate base 110.
Portions of substrate wiring patterns 122 on the upper surface of the at least one substrate base 110 may be the plurality of upper pads 122P, respectively. For example, portions of substrate wiring patterns 122 at the highest vertical level may be the plurality of upper pads 122P, respectively. The plurality of upper pads 122P may not be covered by the upper solder resist layer 132. The plurality of upper pads 122P may include the plurality of upper connection pads 122UP and the at least one upper monitoring pad 122MP. Each of the plurality of upper connection pads 122UP may have the first horizontal width W1 in a top view. The at least one upper monitoring pad 122MP may include the base pad portion BP and the at least one protrusion portion PP. A protrusion portion PP may extend outward from the base pad portion BP. The upper connection pad 122UP may have generally the same shape as the base pad portion BP of an upper monitoring pad 122MP in a top view. The base pad portion BP may have the second horizontal width W2 in a top view. In some implementations, the first horizontal width W1 may be substantially the same as the second horizontal width W2. The protrusion portion PP may have the extension length PL that is less than the second horizontal width W2.
A semiconductor chip 200 may include the semiconductor substrate 210, the wiring layer 220, and the plurality of chip pads 230. The plurality of chip pads 230 may include the plurality of chip connection pads 230R and the at least one chip dummy pad 230D. The plurality of chip terminals 250 may be attached to the plurality of chip pads 230, respectively. The plurality of chip terminals 250 may include the plurality of chip connection terminals 250R and the at least one chip dummy terminal 250D. The plurality of chip connection terminals 250R may be attached to the plurality of chip connection pads 230R, respectively, and the at least one chip dummy terminal 250D may be attached to the at least one chip dummy pad 230D.
The plurality of chip connection terminals 250R may be attached to the plurality of upper connection pads 122UP, respectively, and the at least one chip dummy terminal 250D may be attached to the at least one upper monitoring pad 122MP. The plurality of chip terminals 250 may be between the plurality of chip pads 230 and the plurality of upper pads 122P, respectively, and electrically connect the at least one semiconductor chip 200 to the printed circuit board 100. The plurality of chip connection terminals 250R may be between the plurality of chip connection pads 230R and the plurality of upper connection pads 122UP, respectively, and the at least one chip dummy terminal 250D may be between the at least one chip dummy pad 230D and the at least one upper monitoring pad 122MP. The plurality of chip connection pads 230R may be electrically connected to the semiconductor device 205 and the wiring layer 220. The at least one chip dummy pad 230D may not be electrically connected to the semiconductor device 205. In some implementations, the at least one chip dummy pad 230D may not be electrically connected to the semiconductor device 205 and the wiring layer 220.
Each of the plurality of chip connection terminals 250R and the at least one chip dummy terminal 250D may include an under bump metal (UBM) layer 252, a conductive pillar 254, and a conductive cap 258. The UBM layer 252 may cover at least a portion of a chip pad 230. The UBM layer 252 may cover a portion of the lower surface, e.g., a portion adjacent to an edge of the lower surface, of the chip pad 230. In some implementations, the UBM layer 252 may cover the side surface of the chip pad 230 and a portion of the lower surface adjacent to the side surface of the chip pad 230. The UBM layer 252 may include Ti, Cu, nickel (Ni), Au, nickel vanadium (NiV), nickel phosphide (NiP), titanium nickel (TiNi), titanium tungsten (TiW), TaN, Al, palladium (Pd), chromium copper (CrCu), or a combination thereof.
The conductive pillar 254 may be attached to the lower surface of the chip pad 230. In some implementations, the UBM layer 252 may be between the chip pad 230 and the conductive pillar 254. For example, the conductive pillar 254 may be attached beneath the chip pad 230 and the UBM layer 252. The conductive pillar 254 may include Cu, Ni, stainless steel, or a Cu alloy, such as beryllium copper. For example, the conductive pillar 254 may be formed by a plating process, such as electrolytic plating or electroless plating. The conductive cap 258 may cover the lower surface of the conductive pillar 254. The conductive cap 258 may include a solder ball or a solder bump. For example, the conductive cap 258 may include Ag, tin (Sn), Au, or solder. In some implementations, the conductive cap 258 may include tin silver (SnAg). The maximum horizontal width of the conductive cap 258 of a chip connection terminal 250R may be a third horizontal width W3. The third horizontal width W3 may be greater than or equal to the first horizontal width W1. The maximum horizontal width of the conductive cap 258 of a chip dummy terminal 250D may be a fourth horizontal width W4. The fourth horizontal width W4 may be greater than the second horizontal width W2. The fourth horizontal width W4 may be greater than the third horizontal width W3. The fourth horizontal width W4 may be the same as the maximum horizontal width of the upper monitoring pad 122MP. In some implementations, the fourth horizontal width W4 may be obtained by adding two extension lengths PL to the second horizontal width W2.
The UBM layer 252, the conductive pillar 254, and the conductive cap 258 of the chip connection terminal 250R may be referred to as a first UBM layer, a first conductive pillar, and a first conductive cap, respectively, and the UBM layer 252, the conductive pillar 254, and the conductive cap 258 of the chip dummy terminal 250D may be referred to as a second UBM layer, a second conductive pillar, and a second conductive cap, respectively.
The at least one semiconductor chip 200 may be disposed on the printed circuit board 100 and then attached to the printed circuit board 100 by a reflow process. For example, the at least one semiconductor chip 200 may be disposed on the printed circuit board 100 such that the plurality of chip terminals 250 are on the plurality of upper pads 122P respectively corresponding thereto, and then a reflow process may be performed for the conductive cap 258 of each of the plurality of chip terminals 250 to be reflowed and attached to a corresponding one of the plurality of upper pads 122P. The reflowed conductive caps 258 may fully cover the upper surfaces of the plurality of upper pads 122P, respectively. For example, the reflowed conductive cap 258 of the chip connection terminal 250R may fully cover the upper surface of the upper connection pad 122UP and the reflowed conductive cap 258 of the chip dummy terminal 250D may fully cover the upper surfaces of the base pad portion BP and the at least one protrusion portion PP included in the upper monitoring pad 122MP. When the upper monitoring pad 122MP includes the base pad portion BP and a plurality of protrusion portions PP, the conductive cap 258 of the chip dummy terminal 250D may fully cover the upper surfaces of the base pad portion BP and the plurality of protrusion portions PP included in the upper monitoring pad 122MP.
After attaching the at least one semiconductor chip 200 onto the printed circuit board 100, X-ray monitoring may be performed on the semiconductor package 1 to inspect the plurality of chip terminals 250 respectively attached to the plurality of upper pads 122P.
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The plurality of chip connection terminals 250R may be between the plurality of chip connection pads 230R and the plurality of upper connection pads 122UP, respectively, and the at least one chip dummy terminal 250D may be between the at least one chip dummy pad 230D and the at least one upper monitoring pad 122MP.
The maximum horizontal width of the conductive cap 258 of a chip connection terminal 250R may be a third horizontal width W3a. The third horizontal width W3a may be greater than or equal to the first horizontal width W1.
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Because the plurality of upper pads 122P include the at least one upper monitoring pad 122MP in the printed circuit board 100 and the semiconductor package 1 including the same, after attaching the at least one semiconductor chip 200 onto the printed circuit board 100, X-ray monitoring may be performed on the semiconductor package 1 to observe the planar shape of the conductive cap 258 of the chip dummy terminal 250D on the at least one upper monitoring pad 122MP, thereby inspecting whether the plurality of chip terminals 250 are normally attached to the plurality of upper pads 122P, respectively. Therefore, the electrical connection reliability between the printed circuit board 100 and the at least one semiconductor chip 200 may be easily inspected to provide that the reliability of the printed circuit board 100 electrical connection may be ensured and also that of the semiconductor package 1 including the printed circuit board 100.
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The plurality of upper pads 122P may not be covered by the upper solder resist layer 132. The plurality of upper pads 122P may include the plurality of upper connection pads 122UP and the at least one upper monitoring pad 122MP.
An upper monitoring pad 122MP may correspond to a chip dummy pad 230D that is not connected (NC) and a chip dummy terminal 250D attached to the chip dummy pad 230D among the plurality of chip pads 230 included in the at least one semiconductor chip 200 and the plurality of chip terminals 250 respectively attached to the plurality of chip pads 230. Although
Each of the plurality of upper connection pads 122UP may have the first horizontal width W1. The at least one upper monitoring pad 122MP may include the base pad portion BP and the at least one protrusion portion PP extending outward from the base pad portion BP. In some implementations, the at least one upper monitoring pad 122MP may include the base pad portion BP and four protrusion portions PP extending outward from the base pad portion BP. The base pad portion BP may have the second horizontal width W2. In some implementations, the first horizontal width W1 may be substantially the same as the second horizontal width W2. A protrusion portion PP may have the extension length PL that is less than the second horizontal width W2. The extension length PL of the protrusion portion PP may be less than the difference between the pad pitch PT and the first horizontal width W1.
In some implementations, each upper monitoring pad 122MP in the plurality of upper pads 122P may be arranged adjacent to a corner of the printed circuit board 100 in a top view. For example, when the plurality of upper pads 122P include four upper monitoring pads 122MP, the four upper monitoring pads 122MP may be arranged adjacent to the four corners of the printed circuit board 100 in a top view, respectively. Although
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For example, when the at least one semiconductor chip 200 attached to the printed circuit board 100 has smiley face bending, there is a high possibility that a non-wet failure has occurred between a chip terminal 250 adjacent to a corner of the at least one semiconductor chip 200 and an upper pad 122P in a top view. However, because the printed circuit board 100 includes an upper monitoring pad 122MP adjacent to a corner of the printed circuit board 100 in a top view, it may be easily inspected whether the plurality of chip terminals 250 are normally attached to the plurality of upper pads 122P, respectively. Therefore, the electrical connection reliability between the printed circuit board 100 and the at least one semiconductor chip 200 may be easily inspected to provide that the reliability of the printed circuit board 100 electrical connection may be ensured and also that of the semiconductor package 1 including the printed circuit board 100.
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For example, when the at least one semiconductor chip 200 attached to the printed circuit board 100 has twist bending, there is a high possibility that non-wet failure between a chip terminal 250 and an upper pad 122P occurs at several positions in a top view. However, because the printed circuit board 100a includes upper monitoring pads 122MP adjacent to the corners and the center of the printed circuit board 100a in a top view, it may be easily inspected whether the plurality of chip terminals 250 are normally attached to the plurality of upper pads 122P, respectively.
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For example, when the at least one semiconductor chip 200 attached to the printed circuit board 100b has crying face bending, there is a high possibility that non-wet failure occurs between a chip terminal 250 adjacent to the center of the at least one semiconductor chip 200 and an upper pad 122P in a top view. However, because the printed circuit board 100b includes an upper monitoring pad 122MP adjacent to the center of the printed circuit board 100b in a top view, it may be easily inspected whether the plurality of chip terminals 250 are normally attached to the plurality of upper pads 122P, respectively.
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While this disclosure contains many specific implementation details, these should not be construed as limitations on the scope of what may be claimed. Certain features that are described in this disclosure in the context of separate implementations can also be implemented in combination in a single implementation. Conversely, various features that are described in the context of a single implementation can also be implemented in multiple implementations separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations, one or more features from a combination can in some cases be excised from the combination, and the combination may be directed to a subcombination or variation of a subcombination.
While the printed circuit board has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.
Number | Date | Country | Kind |
---|---|---|---|
10-2023-0164847 | Nov 2023 | KR | national |