Please refer to
The first semiconductor device 22 is electrically connected to the carrier 21. According to this embodiment, the first semiconductor device 22 is a chip and disposed on the upper surface 211 of the carrier 21 by a flip-chip way. However, it is understandable that the first semiconductor device 22 may be a package structure.
The second semiconductor device 23 is disposed above the first semiconductor device 22. In this embodiment, the area of the second semiconductor device 23 is smaller than that of the first semiconductor device 22. As a result, the second semiconductor device 23 is directly adhered to the upper surface of the first semiconductor device 22. The second semiconductor device is a MEMS device, such as a transducer, a microphone, an IC or the like. The conductive elements 24 are used for electrically connecting the second semiconductor device 23 and the upper surface 211 of the carrier 21.
The pre-mold 25 has a ring-shaped sidewall appearance and is formed by molding. The pre-mold 25 and the upper surface 211 of the carrier 21 form a containing compartment 27 for containing the first semiconductor device 22, the second semiconductor device 23 and the conductive elements 24, and the pre-mold 25 comprises an opening. The lid 26 is stuck over the pre-mold 25 and covers the opening of the pre-mold 25. The lid 26 has at least a pervious hole 261 so as to communicate with outward environment. Preferably, the semiconductor device package 2 further comprises a plurality of passive devices 28 positioned on the upper surface 211 of the carrier 21 inside the pre-mold 25.
In the semiconductor device package 2, the pre-mold 25 is formed by molding, and therefore the manufacture process is simpler than that of a conventional semiconductor device package 1 (shown in
Referring to
Please refer to
The first semiconductor device 42 is electrically connected to the carrier 41. According to this embodiment, the first semiconductor device 42 is a chip and disposed on the upper surface 411 of the carrier 41 by a flip-chip way. However, it is understandable that the first semiconductor device 42 may be a package structure.
The pre-mold 45 is formed by molding and comprises a bottom portion 451 and a ring sidewall portion 452. The bottom portion 451 encapsulates the first semiconductor device 42 and covers the upper surface 411 of the carrier 41, and the bottom portion 451 has a through hole 4511 exposing a portion of the upper surface 411 of the carrier 41. The bottom portion 451 and the ring sidewall portion 452 form a containing compartment 47.
The second semiconductor device 43 is disposed inside the containing compartment 47 and may be arranged at any position on the upper surface of the bottom portion 451 of the pre-mold 45. The second semiconductor device 43 is a MEMS device, such as a transducer, a microphone, an IC, or the like.
The conductive elements 44 are used for electrically connecting the second semiconductor device 43 and the upper surface 411 of the carrier 41 by pass through the through hole 4511 of the bottom portion 451. The lid 46 is adhered to the ring sidewall portion 452 of the pre-mold 45 and covers the containing compartment 47 of the pre-mold 45. The lid 46 comprises at least a pervious hole 461 so as to communicate with outward environment. Preferably, the semiconductor device package 4 further comprises a plurality of passive devices 48 positioned on the upper surface 411 of the carrier 41 inside the bottom portion 451 of the pre-mold 45.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Number | Date | Country | Kind |
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095115344 | Apr 2006 | TW | national |