Claims
- 1. A semiconductor integrated circuit device having a first insulating film provided on a principal surface of a semiconductor substrate, first plugs formed in said first insulating film and a first wiring formed by a conductor filled in a first opening in a second insulating film formed over said first insulating film, wherein insulating side walls comprised of a third insulating film are formed on side walls of said first opening in said second insulating film and a line width of said first wiring is defined by said side walls and wherein said first wiring has wider width at its bottom surface than a width of said first plugs and said first wiring has a wider width at an upper portion than at a lower portion thereof, and a top surface of said first wiring is lower than a top portion of said insulating side walls.
- 2. A semiconductor integrated device according to claim 1, wherein said first wiring is formed by a refractory metal.
- 3. A semiconductor integrated device according to claim 1, wherein said another insulating film is silicon nitride.
- 4. A semiconductor integrated circuit device according to claim 1, wherein on a principal surface of said semiconductor substrate, there is formed a dynamic random access memory, said memory including a memory cell formed by a switching transistor and an electric charge storage capacitor connected to said switching transistor, a word line for selecting said switching transistor, and a data line for reading and writing information; and said data line is formed by said first wiring, wherein said electric charge storage capacitor is connected to one of said first plugs and wherein a width of said one of said first plugs is larger than a width of a connection portion of said electric charge storage capacitor.
- 5. A semiconductor integrated circuit device having a first insulating film provided on a principal surface of a semiconductor substrate, a plug formed in said first insulating film and first wiring formed by a conductor filled in a first opening in a second insulating film formed over said first insulating film, wherein insulating side walls comprised of third insulating films are formed on side walls of said first opening in said second insulating film and a line width of said first wiring is defined by said side walls and a material of said first wiring is different from a material of said plug and wherein said first wiring has wider width at its bottom surface than a width of said plug and said first wiring has a wider width at an upper portion than at a lower portion thereof, and a top surface of said first wiring is lower than a top portion of said insulating side walls.
- 6. A semiconductor integrated device according to claim 5, wherein said first wiring is formed by a refractory metal.
- 7. A semiconductor integrated device according to claim 5, wherein said third insulating film is silicon nitride.
Parent Case Info
This application is a continuation application of U.S. Ser. No. 09/331,149, filed Jun. 17, 1999, which is a 371 of PCT/JP96/03736 filed Dec. 20, 1996.
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Entry |
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Continuations (1)
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Number |
Date |
Country |
Parent |
09/331149 |
|
US |
Child |
09/825921 |
|
US |