1. Field of the Invention
The present invention relates to semiconductor packages, and more particularly, to a semiconductor package having a semiconductor chip encapsulated by a molding compound and a fabrication method of the semiconductor package.
2. Description of Related Art
In order to form a semiconductor package, a semiconductor chip is electrically connected to a carrier such as a lead frame or a packaging substrate, and an encapsulant made of such as an epoxy resin is formed on the carrier for encapsulating the semiconductor chip, thereby protecting the semiconductor chip against intrusion of external moisture or contaminants.
However, a semiconductor package in operation can easily be influenced by electromagnetic interference (EMI), thereby causing abnormal operation and poor electrical performance of the semiconductor package.
Accordingly, a semiconductor package having a metal shield embedded in the encapsulant thereof is disclosed.
The metal shield 13 shields the semiconductor chip 11 from external EMI so as to prevent abnormal operation of the semiconductor package 1.
However, the fabrication and assembly of the metal shield 13 complicate the fabrication process and increase the assembly difficulty of the semiconductor package.
Further, during a molding process, when the molding compound 14 passes through the perforated metal shield 13 to encapsulate the semiconductor chip 11, turbulence easily occurs in the molding compound 14, thus easily resulting in generation of air bubbles or voids in the molding compound 14 and consequently causing a popcorn effect in a subsequent heating process.
Therefore, how to overcome the above-described drawbacks has become urgent.
In view of the above-described drawbacks, the present invention provides a semiconductor package, which comprises: a substrate body; at least a semiconductor element disposed on the substrate body; and a molding compound formed on the substrate body for encapsulating the semiconductor element, wherein the molding compound comprises a metal oxide.
The present invention further provides a fabrication method of a semiconductor package, which comprises the steps of: disposing at least a semiconductor element on a substrate body; and forming a molding compound on the substrate body to encapsulate the semiconductor element, wherein the molding compound comprises a metal oxide.
In the above-described semiconductor package and the fabrication method thereof, the semiconductor package can be a wire-bonding type package, a flip-chip type package, a hybrid type package, an embedded type package or a wafer level package.
In the above-described semiconductor package and the fabrication method thereof, the substrate body can be electrically connected to the semiconductor element, and the semiconductor element can be an active element or a passive element.
In the above-described semiconductor package and the fabrication method thereof, the metal oxide can be at least one selected from the group consisting of iron oxide such as Fe2O3, manganese oxide such as Mn3O4 and zinc oxide such as ZnO.
The present invention further provides a molding compound, which comprises: a polymer resin; and a metal oxide selected from the group consisting of iron oxide, manganese oxide and zinc oxide.
The iron oxide can be Fe2O3. The manganese oxide can be Mn3O4 and the zinc oxide can be ZnO.
The polymer resin can be an epoxy resin.
Therefore, the present invention effectively prevents electromagnetic interference by forming a molding compound that has a high insulation impedance and a high heat dissipating rate and can suppress electromagnetic interference instead of using a conventional metal shield, thus simplifying the fabrication and assembly of the semiconductor package.
Further, since the molding compound in a molding process does not need to pass through a perforated metal shield as in the prior art, the present invention prevents turbulence from occurring in the molding compound. Therefore, the present invention avoids generation of voids in the molding compound and hence prevents a popcorn effect from occurring during a subsequent heating process.
The following illustrative embodiments are provided to illustrate the disclosure of the present invention, these and other advantages and effects can be apparent to those in the art after reading this specification.
It should be noted that all the drawings are not intended to limit the present invention. Various modifications and variations can be made without departing from the spirit of the present invention. Further, terms such as “upper”, “a” etc. are merely for illustrative purposes and should not be construed to limit the scope of the present invention.
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In the present embodiment, the substrate body 20 is a packaging substrate such as a circuit board, a metal plate or a ceramic plate. The substrate body 20 has circuits (not shown) formed thereon and electrically connected to the bonding wires 22.
The semiconductor element 21 is an active element or a passive element.
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In the present embodiment, the metal oxide is an iron oxide such as Fe2O3. The metal oxide can further contain manganese and zinc oxide such as Mn3O4 and ZnO. For example, sintered oxides of Mn, Zn and Fe are pulverized and then mixed with a polymer resin such as an epoxy resin to form a molding compound that has a high insulation impedance and a high heat dissipating rate and can suppress electromagnetic interference.
Therefore, the present invention shields the semiconductor element 21 from external electromagnetic interference by forming the molding compound 23 that contains a metal oxide so as to have a high insulation impedance and a high heat dissipating rate and is capable of suppressing electromagnetic interference, thereby preventing abnormal operation of the semiconductor package 2. Further, the present invention dispenses with the conventional metal shield and thereby simplifies the fabrication and assembly of the semiconductor package 2. Therefore, the present invention facilitates the mass production of the semiconductor package.
Furthermore, since the molding compound 23 in a molding process does not need to pass through a perforated metal shield as in the prior art, the present invention prevents turbulence from occurring in the molding compound 23. As such, the present invention avoids generation of voids in the molding compound 23 and hence prevents a popcorn effect from occurring during a subsequent heating process.
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The present invention further provides a semiconductor package 2, 3, 4, 5, 6, 7, which has: a substrate body 20, 50, 60, 70; a semiconductor element 21, 31, 41a, 41b, 71 disposed on the substrate body 20, 50, 60, 70; and a molding compound 23 encapsulating the semiconductor element 21, 31, 41a, 41b, 71.
The semiconductor package 2, 3, 4, 5, 6, 7 is a wire-bonding type package, a flip-chip package, a hybrid type package or a wafer level package.
The substrate body 20, 50, 60, 70 is electrically connected to the semiconductor element 21, 31, 41a, 41b, 71.
The semiconductor element 21, 31, 41a, 41b, 71 is an active element or a passive element.
The molding compound 23 contains a metal oxide.
In particular, the molding compound 23 contains a polymer resin such as an epoxy resin and a metal oxide such as iron oxide (Fe2O3), manganese oxide (Mn3O4) and zinc oxide (ZnO).
Therefore, based on the characteristics of the molding compound, the present invention achieves an EMI shielding effect without the need of a conventional metal shield, thereby simplifying the fabrication of the semiconductor package.
Further, since the molding compound in a molding process does not need to pass through a perforated metal shield as in the prior art, the present invention avoids generation of voids in the molding compound and hence prevents a popcorn effect from occurring.
The above-described descriptions of the detailed embodiments are only to illustrate the preferred implementation according to the present invention, and it is not to limit the scope of the present invention. Accordingly, all modifications and variations completed by those with ordinary skill in the art should fall within the scope of present invention defined by the appended claims.
Number | Date | Country | Kind |
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102109431 | Mar 2013 | TW | national |