Claims
- 1.-130. (Cancelled).
- 131. A method for making a silver-containing film, the method comprising the steps of:
applying a layer of paste to a substrate, said paste including particles dispersed in a carrier liquid, said particles including a metallic phase with greater than about 30 weight percent silver; removing said carrier liquid from said layer of paste and forming on said substrate a densified layer including silver from said particles; wherein, said particles being substantially spheroidal, having a weight average size of from about 0.1 micron to about 4 microns, having a size distribution such that at least about 90 weight percent of said particles are smaller than about twice said weight average size and having a mean crystallite size of larger than about 50 nanometers.
- 132. The process of claim 131, wherein:
said particles are comprised substantially of only said metallic phase.
- 133. The method of claim 131, wherein:
said metallic phase comprises a first material phase and said particles further comprise a second material phase being substantially free of silver.
- 134. The method of claim 133, wherein:
said first material phase comprises greater than about 50 weight percent of said particles.
- 135. The method of claim 133, wherein:
said second material phase comprises less than about 30 weight percent of said particles.
- 136. The method of claim 133, wherein:
said first material phase is electrically conductive and said second material phase is dielectric.
- 137. The method of claim 133, wherein:
said substrate comprises a dielectric material for a capacitor and said second material phase of said particles also comprises said dielectric material.
- 138. The method of claim 137, wherein:
said dielectric material is a titanate.
- 139. The method of claim 133, wherein:
said second material phase comprises an oxide material.
- 140. The method of claim 133, wherein:
said second material phase comprises a ceramic material.
- 141. The method of claim 131, wherein:
said step of forming on said substrate a film including silver from said particles comprises heating said particles, on said substrate, to a temperature of greater than about 300° C.
- 142. The method of claim 131, wherein:
said method further comprises preparing a structure of stacked layers including a plurality of first layers including a dielectric material and second layers including said particles; and heating said structure to a temperature of greater than about 300° C. to form a microelectronic structure including a plurality of silver-containing films, having silver from said particles, and including a plurality of dielectric layers, with at least one of said dielectric layers being between two adjacent of said silver-containing films.
- 143. The method of claim 131, wherein:
said particles including silver are first particles and the particulate product further compromises second particles, compositionally different from said first particles, including palladium.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to U.S. Provisional Patent Application No. 60/039,450 filed Feb. 24, 1998 and to U.S. Provisional Patent Application No. 60/038,258 filed Feb. 24, 1998, the contents of both of which are incorporated herein.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60039450 |
Feb 1997 |
US |
|
60038258 |
Feb 1997 |
US |
Divisions (2)
|
Number |
Date |
Country |
Parent |
09668805 |
Sep 2000 |
US |
Child |
10774791 |
Feb 2004 |
US |
Parent |
09028277 |
Feb 1998 |
US |
Child |
09668805 |
Sep 2000 |
US |