Patent Application
20230392278
One or more embodiments relate to a substrate supporting plate, and more particularly, to a substrate supporting plate, an apparatus including the substrate supporting plate, and a method using the substrate supporting plate and/or the apparatus.
When a semiconductor thin film is deposited, one important factor from among various factors for determining the quality of a thin film is contamination with residual particles in a process.
For example, in a process with a fast switching cycle between a source gas and a reactive gas, such as an atomic layer deposition (ALD) process, a gas (e.g., a source gas) that is not removed from a reactor yet may react with another gas (e.g., a reactive gas) and may act as a contaminant in the reactor. The contaminant may penetrate into a device structure on a substrate, thereby leading to a malfunction of a semiconductor device.
In more detail, during the process, the source gas or the reactive gas may penetrate between the substrate and a susceptor, on which the substrate is mounted. Accordingly, the gases cause unwanted deposition on a rear surface of the substrate. In this case, the device formed on the substrate may be contaminated, and when the substrate is detached from the susceptor, contamination particles in a reactive space may diffuse and the reactor may also be contaminated.
Any discussion of problems and solutions set forth in this section has been included in this disclosure solely for the purpose of providing a context for the present disclosure and should not be taken as an admission that any or all of the discussion was known at the time the invention was made.
One or more embodiments include a substrate supporting plate that may prevent or mitigate a source gas and/or or a reactive gas reaching a rear surface of a substrate, an apparatus including the substrate supporting plate, and a method using the substrate supporting plate. Examples of the disclosure are described below in the context of a thin film deposition reactor. However, unless stated otherwise, the invention is not limited to such applications. For example, the apparatus can be used for cleaning, treating, and/or etching in addition to or as an alternative to deposition.
Additional aspects will be set forth, in part, in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.
According to one or more embodiments, a substrate supporting plate includes: a substrate mounting portion; and a peripheral portion surrounding the substrate mounting portion, wherein an edge portion of a top surface of the substrate mounting portion is anodized, and a central portion of the top surface of the substrate mounting portion is not anodized.
The substrate supporting plate may further include a substrate supporting pin hole. The substrate supporting pin hole may be formed in the central portion.
The substrate mounting portion may have a concave shape relative to the peripheral portion.
The anodized edge portion may have a thickness ranging from about 10 μm to about 100 μm.
An area of the central portion may be less than an area of a target substrate to be processed.
An insulating layer may be formed on a top surface of the edge portion due to the anodizing. The insulating layer may include aluminum oxide.
At least a part of a bottom surface that is opposite to the top surface may be anodized.
According to one or more embodiments, a thin film deposition apparatus includes: a reactor wall; a gas injection device; a gas channel; a gas flow control device; and a substrate supporting plate, wherein the gas injection device, the gas channel, and the gas flow control device are sequentially stacked and are provided in the reactor wall, wherein the substrate supporting plate includes a top surface, a bottom surface, and a side surface, and an insulating layer is formed on at least a part of the top surface and at least a part of the bottom surface of the substrate supporting plate.
The insulating layer may be further formed on the side surface of the substrate supporting plate.
The insulating layer may protrude from the top surface of the substrate supporting plate.
A gas supplied by the gas channel and the gas injection device may be injected onto a substrate on the substrate supporting plate, wherein at least a part of the injected gas is exhausted through the gas flow control device. The substrate may be disposed to overlap the insulating layer.
The injected gas may penetrate into a space between the substrate and the substrate supporting plate to form a thin film on a rear surface of the substrate.
The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion, wherein the peripheral portion contacts the reactor wall to form a reactive space through face sealing between them.
According to one or more embodiments, a thin film deposition method includes: mounting a target substrate to be processed on the substrate supporting plate; closely attaching the target substrate to the substrate supporting plate by using charges accumulated on the target substrate, while depositing a first thin film on the target substrate; and unloading the target substrate.
The depositing of the first thin film may include: supplying a first gas; removing the first gas that remains by supplying a purge gas; supplying a second gas and plasma; and removing a second gas that remains by supplying the purge gas.
A second thin film may be formed on a rear surface of the target substrate while the first thin film is deposited. A width of the second thin film may be less than a width of an edge excluding portion. For example, when a film is deposited on a 300 mm wafer, a width of the edge excluding portion may be determined to be 3 mm.
In accordance with additional exemplary embodiments, a substrate supporting plate includes a top surface comprising a substrate mounting portion and a peripheral portion, and an insulating layer formed on the top surface. The substrate mounting portion can be recessed relative to the peripheral portion. The peripheral portion includes a first section and a second section, wherein the insulating layer is formed on a top surface of the second section. In accordance with examples of these embodiments, the second section is radially exterior the first section. In accordance with further examples of these embodiments, a top surface of the first section is conductive. In accordance with yet further aspects, the peripheral portion further comprises a third section. An inner diameter of the second section can be substantially the same as an outer diameter of a gas supply device opposite the substrate supporting plate. The insulating layer can be or include a metal oxide, such as (e.g., anodized) alumina.
In accordance with yet additional embodiments, an apparatus includes a reactor wall, a gas supply device disposed within the reactor wall, and a substrate supporting plate, such as a substrate supporting plate described herein. A reaction space can be defined between the reactor wall, the substrate supporting plate, and the gas supply device. The apparatus can further include a gas flow control device adjacent the gas supply device.
This summary is provided by way of example only and should not be viewed as limiting this disclosure in any way. Other embodiments are described below in conjunction with the associated drawings.
These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings.
It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of illustrated embodiments of the present disclosure.
The present disclosure now will be described more fully hereinafter with reference to the accompanying drawings. The present disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to one of ordinary skill in the art.
The terminology used herein is for the purpose of describing embodiments only and is not intended to be limiting of embodiments of the present disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and/or “including,” when used herein, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used here, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that although the terms “first,” “second,” and the like may be used herein to describe various members, regions, layers, and/or portions, these members, regions, layers, and/or portions should not be limited by these terms. The terms do not refer to a specific order, a vertical relationship, or a preference, and are only used to distinguish one member, region, or portion from another member, region, or portion. Accordingly, a first member, region, or portion that will be described below may refer to a second member, region, or portion without departing from the teaching of the present disclosure.
As used herein substantially or about the same means±5%, ±2%, ±1%, or ±0.5% of another value or shape—e.g., one or more cross-sectional dimensions of the shape. The percentages can be absolute or relative.
In the drawings, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments should not be construed as limited to the particular shapes of regions illustrated herein but may be to include deviations in shapes that result, for example, from manufacturing. Further, the drawing figures may be used to illustrate various features, which may not be drawn to scale.
Expressions, such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.
A deposition apparatus according to an embodiment will now be explained with reference to
In other words, the substrate supporting plate 103 may be configured to contact the reactor wall 101 through face sealing, and the reaction space 125 may be formed between the reactor wall 101 and the substrate supporting plate 103 due to the face sealing. Also, a gas discharge path 117 may be formed between the reactor wall 101 and a gas flow control device 105 and between the reactor wall 101 and a gas supply device 109 due to the face sealing.
The gas flow control device 105 and the gas supply device 109 may be disposed between the reactor wall 101 and the substrate supporting plate 103. The gas flow control device 105 and the gas supply device 109 may be integrally formed with each other, or a portion with gas injection holes 133 may be formed separately. In the latter case, the gas flow control device 105 may be stacked on the gas supply device 109. Optionally, the gas supply device 109 may be separate, and in this case, the gas supply device 109 may include a gas injection device having a plurality of through-holes and a gas channel stacked on the gas injection device (see
The gas flow control device 105 may include a plate and a side wall 123 that protrudes from the plate. A plurality of through-holes 111 that pass through the side wall 123 may be formed in the side wall 123.
Grooves 127, 129, and 131 for housing a sealing member, such as an O-ring, may be formed between the reactor wall 101 and the gas flow control device 105 and between the gas flow control device 105 and the gas supply device 109. Due to the sealing member, an external gas may be prevented from being introduced into the reaction space 125. Also, due to the sealing member, a reactive gas in the reaction space 125 may flow along a normal path (i.e., a gas discharge path 117 and a gas outlet 115 (see
The gas supply device 109 may be used as an electrode in a plasma process, such as a capacitively coupled plasma (CCP) method. In this case, the gas supply device 109 may include a metal material, such as aluminum (Al). In the CCP method, the substrate supporting plate 103 may be used as an electrode, and thus capacitive coupling may be achieved by the gas supply device 109 that functions as a first electrode and the substrate supporting plate 103 that functions as a second electrode.
In more detail, RF power that is generated by an external plasma generator (e.g., a generator 1610, illustrated in
Optionally, the gas supply device 109 may be made of a conductor, whereas the gas flow control device 105 may be made of an insulating material, such as ceramic, and thus the gas supply device 109 that is used as a plasma electrode may be insulated from the reactor wall 101.
As shown in
Also, as shown in
A chemical reaction may be performed in the reaction space 125 or on a substrate 110 where the reactive gas exists to form a thin film on the substrate 110. A residual gas after the thin film is formed (or other process is performed) may pass through the gas discharge path 117 formed between the reactor wall 101 and a side wall of the gas supply device 109, may pass through the through-holes 111 formed in the side wall 123 of the gas flow control device 105, may be introduced into an inner space 126 of the gas flow control device 105, and then may be discharged to the outside through the gas outlet 115. The inner space 126 of the gas flow control device 105 may be defined as a space surrounded by the side wall 123 of the gas flow control device 105. The inner space 126 may be coupled to the gas outlet 115.
The plate 301 may be surrounded by the side wall 123 that protrudes so that the plate 301 has a concave shape. The gas inlet 113 through which an external reactive gas is introduced is disposed in a portion of the gas flow control device 105. At least two screw holes 305 are formed around the gas inlet 113, and screws that are mechanical connection members for connecting the gas flow control device 105 and the gas supply device 109 pass through the screw holes 305. The RF rod holes 303 are formed in another portion of the gas flow control device 105 so that the RF rods 313 that are connected to an external plasma supply unit (not shown in
The gas supply device 109 connected to the RF rods 313 may function as an electrode in a plasma process using a CCP method. In this case, a gas supplied by a gas channel and a gas injection device of the gas supply device 109 may be activated by the gas supply device 109 that functions as an electrode and may be injected onto the substrate 110 on the substrate supporting plate 103.
Referring to
The substrate supporting pin hole H, through which a substrate supporting pin enters, may be formed in the substrate supporting plate P, such as a susceptor, in order to load/unload the substrate. The peripheral portion A may contact the reactor wall 101 (see
Referring to
In a semiconductor manufacturing apparatus according to an embodiment, the above problems are solved by anodizing a substrate supporting plate, such as a susceptor; in other words, by forming a thin oxide film on a surface of a metal.
In more detail, according to some embodiments, a portion of a substrate supporting plate that contacts a substrate is anodized so that the substrate supporting plate is closely attached to the substrate, and only a part of the substrate supporting plate is anodized so that the substrate is easily detached after a process ends. Only an edge portion of the substrate supporting plate that contacts the substrate may be anodized.
As such, since a top surface of a substrate supporting plate is anodized, an adhesive force between the substrate supporting plate and a substrate during a plasma process may increase, and thus a process gas may be prevented from penetrating into a rear surface of the substrate during a process. Also, since only a part of the substrate supporting plate is anodized, the substrate may be easily detached after the process.
In more detail, in a plasma process, such as a plasma-enhanced atomic layer deposition (PE-ALD) process, when an entire top surface of a substrate supporting plate is anodized, a substrate is attached to the substrate supporting plate due to RF charges accumulated on the substrate. In this case, even after the plasma process ends, the substrate attached to the substrate supporting plate is continuously attached, thereby making it difficult to unload the substrate. However, according to embodiments, since a part of a top surface of a substrate supporting plate (e.g., an edge of the substrate supporting plate that contacts a substrate) is anodized, a process gas may be prevented from penetrating into a rear surface of the substrate and the substrate that is closely attached to the substrate supporting plate due to an electrostatic force may be more easily unloaded.
In an optional embodiment, since an edge of a substrate supporting plate that contacts a substrate is anodized, an insulating layer (e.g., an insulating layer made of anodized aluminum oxide) having a ring shape (e.g., a quadrangular ring shape or a circular ring shape) may be formed on the substrate supporting plate. A width of the insulating layer formed on the substrate supporting plate may be determined through experiments.
Referring to
A part of an edge portion E of a top surface of the substrate mounting portion M (e.g., a portion excluding or including an inclined side wall of the edge portion E) may be anodized and a central portion C of the top surface may not be anodized. In order to locate the target substrate S so that the target substrate S overlaps the anodized part, an area of the central portion C may be less than an area of the target substrate S. The peripheral portion A may not be anodized as shown in
As the edge portion E is anodized, an insulating layer D may be formed on the top surface of the edge portion E. When the target substrate S has a circular shape, like a wafer, the insulating layer D may be formed to have a circular ring shape. In contrast, when the target substrate S has a quadrangular shape, like a display panel, the insulating layer D may be formed to have a quadrangular ring shape. That is, the insulating layer D formed due to anodizing may be formed to have a ring shape conforming to a shape of the target substrate S.
In an embodiment, the substrate supporting plate P may include a metal, and an insulating layer (e.g., a metal oxide layer) may be formed by anodizing the metal. For example, the substrate supporting plate P may include aluminum, and an aluminum oxide layer may be formed due to anodizing. A thickness of the aluminum oxide layer may range from about 10 μm to about 100 μm, for example, from about 15 μm to about 45 pm.
According to embodiments, a part (e.g., an edge) of the substrate supporting plate P, such as a susceptor that contacts the target substrate S, is anodized and the target substrate S is disposed to overlap the insulating layer D that is formed due to the anodizing. Accordingly, the target substrate S and the substrate supporting plate P may be closely attached to each other, and thus a process gas may be prevented from penetrating therebetween during a plasma process and problems, such as contamination of a reactor, a device yield drop, and contamination in a subsequent process due to deposition on a rear surface of the target substrate S, may be avoided. Also, since the substrate supporting plate P is partially anodized and the target substrate S overlaps the insulating layer D that is formed due to the anodizing, the target substrate S may be easily unloaded after a process.
Referring to
In order to form the substrate supporting plate P of
A method of depositing a thin film by using the substrate supporting plate P of
In this embodiment, the second step and the third step may be performed (substantially) simultaneously, so that the target substrate S may be closely attached to the substrate supporting plate P. During the plasma deposition process, the target substrate S may be charged (i.e., charges may be accumulated in the target substrate S). This results in polarization of an anodized insulating layer D, D′ of the substrate supporting plate P. Because of the polarization, electrostatic force between the target substrate S and the substrate supporting plate P may be generated. The electrostatic force leads to the close attachment between the target substrate S and the substrate supporting plate P.
The thin film may be deposited on the target substrate S by performing the first through fifth steps. During the third step of depositing the first thin film, a second thin film may be formed on a rear surface of the target substrate S. Since the second thin film contaminates a device formed on the target substrate S, diffuses contamination particles in a reaction space when the target substrate S is unloaded, and thus contaminates a reactor (and equipment in a subsequent process), the second thin film has to be formed as small as possible. In order to make the second thin film as small as possible, the second thin film has to be formed in consideration of an edge exclusion portion that is a penetration allowable range. In other words, a width of the second thin film may be less than a width of the edge exclusion portion.
Referring to
Referring to
Referring to
Referring to
Referring to
That is, the substrate supporting plate P may be formed by optionally performing surface treatment by using the mask, instead of the above process of mechanically removing a part of the insulating layer D. In an optional embodiment, due to the surface treatment, a metal of the substrate supporting plate P may be changed into an insulating material with a volume increased, and in this case, a top surface of the insulating layer D may be higher than a top surface of an exposed metal layer of the substrate supporting plate P.
In the illustrated example, the substrate supporting plate 1606 includes a top surface 1622, a bottom surface 1624, and a sidewall 1626 spanning between the top surface 1622 and the bottom surface 1624. The top surface 1622 includes a substrate mounting portion 1628 and a peripheral portion 1630. The substrate mounting portion 1628 can be the same or similar to the substrate mounting portion M described above in connections with
The substrate supporting plate 1606 also includes the insulating layer 1612 formed on the top surface 1622. More particularly, the insulating layer 1612 can be formed on a section of the peripheral portion 1630. For example, the peripheral portion 1630 can include a first section 1632 and a second section 1634. The first section 1632 and the second section 1634 can be substantially annular ring shaped. The second section 1634 is radially exterior first section 1632. The insulating layer 1612 can be formed on a top surface of the second section 1634. In accordance with examples of the illustrative embodiment, a top surface of the first section 1632 is conductive. For example, the first section 1632 can be or include a metal, such as aluminum or stainless steel such as SUS 304. In such cases, the insulating material 1612 can be or include a metal oxide comprising the metal—e.g., (anodized) alumina. The insulating material 1612 can be formed using techniques described herein. A thickness of the insulating layer 1612 can be, for example, between about 10 μm and about 100 μm. As described above in connection with
In the illustrative example, the peripheral portion 1630 further comprises a third section 1636. The third section 1636 can also be substantially annular ring shaped. Additionally or alternatively, the third section 1636 can be radially exterior the second section 1634. In accordance with aspects of these examples, a height H2 of the third section 1636 is less than a height H3 of the second section 1634. A height H4 of substrate mounting portion 1628 can be less than H3 and/or greater than H2. By way of particular examples, H2 can be about 7.0 mm to about 8.0 mm, H3 can be about 10.0 mm to about 11.0 mm, and/or H4 can be about 9.0 mm to about 10.0 mm.
To obtain a desired bulk plasma area 1614, a length L and/or a corresponding area of a non-insulated surface (including the substrate mounting portion 1628 and the first section 1632) can be substantially the same length (e.g., diameter D1) or corresponding area of an electrode area of the gas supply device 1604. Additionally or alternatively, an inner diameter (or other cross-sectional measurement, which can be substantially L) of the second section 1634 can be substantially the same as outer diameter D1 of the gas supply device 1604 that is opposite the substrate supporting plate 1606.
In accordance with further examples of the disclosure, an outer diameter D2 of the second section 1634 is substantially the same as an inner diameter of an inner surface 1638 of the reactor wall 1602.
During use, the substrate supporting plate 1606 can expand, and a gap d between the substrate S and the wall 1620 can vary or change due to thermal expansion of the substrate supporting plate 1606. Further, the substrate S can slide or move within the substrate mounting portion 1628. Therefore, a mismatch between the substrate area and the bulk plasma area may occur within the substrate mounting portion 1628, leading to a deterioration of film qualities such as a film uniformity and a wet etch ratio at the edge position of the substrate S. Thus, by moving the insulating layer 1612 further (e.g., radially) outward, the bulk plasma area 1614 is expanded and covers the entire substrate area regardless of the sliding of the substrate within the substrate mounting portion 1628, a non-uniformity of processes, particularly at an outer region of substrate S, are reduced.
A method of using the apparatus can be as described above in connection with
Embodiments should not be construed as limited to the particular shapes of portions illustrated herein for better understanding of the present disclosure but may be to include deviations in shapes.
While one or more embodiments have been described with reference to the figures, it will be understood by one of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-20160032079 | Mar 2016 | KR | national |
This application is a continuation-in-part of U.S. patent application Ser. No. 17/092,599, filed Nov. 9, 2020, and entitled “Substrate Supporting Plate, Thin Film Deposition Apparatus Including the Same, and Thin Film Deposition Method,” which is a divisional of U.S. patent application Ser. No. 15/451,285, filed Mar. 6, 2017, and entitled “Substrate Supporting Plate, Thin Film Deposition Apparatus Including the Same, and Thin Film Deposition Method,” which claims the benefit of Korean Patent Application No. 10-20160032079, filed on Mar. 17, 2016 in the Korean Intellectual Property Office, the disclosures of which are incorporated herein in their entireties by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 15451285 | Mar 2017 | US |
| Child | 17092599 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 17092599 | Nov 2020 | US |
| Child | 18235589 | US |
