Chiu Ng

Person

El Segundo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar semiconductor device with multi-trench enhancement regions
- Patent number 10,164,078
- Issue date Dec 25, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a superjunction structure
- Patent number 10,115,812
- Issue date Oct 30, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device with sub-cathode enhancement regions
- Patent number 9,871,128
- Issue date Jan 16, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having deep gate trench
- Patent number 9,859,407
- Issue date Jan 2, 2018
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device having a deep charge-balanced structure
- Patent number 9,831,330
- Issue date Nov 28, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having a deep superjunction structure
- Patent number 9,799,725
- Issue date Oct 24, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device having a charge-balanced inter-trench...
- Patent number 9,768,284
- Issue date Sep 19, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having an inter-trench superjunction structure
- Patent number 9,685,506
- Issue date Jun 20, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with buried emitter electrode
- Patent number 9,496,378
- Issue date Nov 15, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate trench IGBT
- Patent number 9,299,819
- Issue date Mar 29, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with buried emitter electrode
- Patent number 9,245,985
- Issue date Jan 26, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having increased switching speed
- Patent number 8,314,002
- Issue date Nov 20, 2012
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable threshold trench IGBT with offset emitter contacts
- Patent number 8,067,797
- Issue date Nov 29, 2011
- International Rectifier Corporation
- Chiu Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench IGBT with depletion stop layer
- Patent number 7,956,419
- Issue date Jun 7, 2011
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench IGBT for highly capacitive loads
- Patent number 7,655,977
- Issue date Feb 2, 2010
- International Rectifier Corporation
- Chiu Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage non punch through IGBT for switch mode power supplies
- Patent number 7,534,666
- Issue date May 19, 2009
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with amorphous silicon transparent collector
- Patent number 7,507,608
- Issue date Mar 24, 2009
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to create buried heavy metal at selected depth
- Patent number 7,485,920
- Issue date Feb 3, 2009
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled implant for shorter trench emitter
- Patent number 7,335,947
- Issue date Feb 26, 2008
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with amorphous silicon transparent collector
- Patent number 7,005,702
- Issue date Feb 28, 2006
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled implant for shorter trench emitter
- Patent number 6,919,248
- Issue date Jul 19, 2005
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode with weak anode
- Patent number 6,753,580
- Issue date Jun 22, 2004
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen implant for buffer zone of punch-through non EPI IGBT
- Patent number 6,707,111
- Issue date Mar 16, 2004
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench IGBT
- Patent number 6,683,331
- Issue date Jan 27, 2004
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid IGBT and MOSFET for zero current at zero voltage
- Patent number 6,627,961
- Issue date Sep 30, 2003
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recovery diode and method for its manufacture
- Patent number 6,603,153
- Issue date Aug 5, 2003
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen implant for buffer zone of punch-through non epi IGBT
- Patent number 6,482,681
- Issue date Nov 19, 2002
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming power MOSFET device in float zone, non-epitaxia...
- Patent number 6,426,248
- Issue date Jul 30, 2002
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recovery diode and method for its manufacture
- Patent number 6,261,874
- Issue date Jul 17, 2001
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anneal-free process for forming weak collector
- Patent number 6,242,288
- Issue date Jun 5, 2001
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Having a Superjunction Structure
- Publication number 20180012983
- Publication date Jan 11, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device with Multi-Trench Enhancement Regions
- Publication number 20170271488
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device Having Localized Enhancement Regions
- Publication number 20170271445
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions
- Publication number 20170271487
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench...
- Publication number 20160260824
- Publication date Sep 8, 2016
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having an Inter-Trench Superjunction Structure
- Publication number 20160260799
- Publication date Sep 8, 2016
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure
- Publication number 20160260823
- Publication date Sep 8, 2016
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having a Deep Superjunction Structure
- Publication number 20160260825
- Publication date Sep 8, 2016
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having Deep Gate Trench
- Publication number 20160204238
- Publication date Jul 14, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with Buried Emitter Electrode
- Publication number 20160155832
- Publication date Jun 2, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with Buried Emitter Electrode
- Publication number 20130256744
- Publication date Oct 3, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Gate Trench IGBT
- Publication number 20130256745
- Publication date Oct 3, 2013
- International Rectifier Corporation
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS
- Publication number 20090146177
- Publication date Jun 11, 2009
- Chiu Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench IGBT with depletion stop layer
- Publication number 20070096167
- Publication date May 3, 2007
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench IGBT for highly capacitive loads
- Publication number 20070085148
- Publication date Apr 19, 2007
- International Rectifier Corp.
- Chiu Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench IGBT with increased short circuit capability
- Publication number 20070063269
- Publication date Mar 22, 2007
- International Rectifier Corp.
- Chiu Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep N diffusion for trench IGBT
- Publication number 20070034941
- Publication date Feb 15, 2007
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage non punch through IGBT for switch mode power supplies
- Publication number 20070026577
- Publication date Feb 1, 2007
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with amorphous silicon transparent collector
- Publication number 20060094179
- Publication date May 4, 2006
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having increased switching speed
- Publication number 20050227461
- Publication date Oct 13, 2005
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Angled implant for shorter trench emitter
- Publication number 20050212039
- Publication date Sep 29, 2005
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Angled implant for shorter trench emitter
- Publication number 20040178457
- Publication date Sep 16, 2004
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench IGBT
- Publication number 20030201454
- Publication date Oct 30, 2003
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to create buried heavy metal at selected depth
- Publication number 20030057522
- Publication date Mar 27, 2003
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen implant for buffer zone of punch-through non EPI IGBT
- Publication number 20020190281
- Publication date Dec 19, 2002
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming power MOSFET device in float zone, non-epitaxia...
- Publication number 20020019084
- Publication date Feb 14, 2002
- International Rectifier Corporation
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fast recovery diode and method for its manufacture
- Publication number 20020008246
- Publication date Jan 24, 2002
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Bipolar semiconductor device with multi-trench enhancement regions

Semiconductor device having a superjunction structure

Bipolar semiconductor device with sub-cathode enhancement regions

IGBT having deep gate trench

Bipolar semiconductor device having a deep charge-balanced structure

IGBT having a deep superjunction structure

Bipolar semiconductor device having a charge-balanced inter-trench...

IGBT having an inter-trench superjunction structure

IGBT with buried emitter electrode

Deep gate trench IGBT

IGBT with buried emitter electrode

Semiconductor device having increased switching speed

Variable threshold trench IGBT with offset emitter contacts

Trench IGBT with depletion stop layer

Trench IGBT for highly capacitive loads

High voltage non punch through IGBT for switch mode power supplies

IGBT with amorphous silicon transparent collector

Process to create buried heavy metal at selected depth

Angled implant for shorter trench emitter

IGBT with amorphous silicon transparent collector

Angled implant for shorter trench emitter

Diode with weak anode

Hydrogen implant for buffer zone of punch-through non EPI IGBT

Trench IGBT

Hybrid IGBT and MOSFET for zero current at zero voltage

Fast recovery diode and method for its manufacture

Hydrogen implant for buffer zone of punch-through non epi IGBT

Process for forming power MOSFET device in float zone, non-epitaxia...

Fast recovery diode and method for its manufacture

Anneal-free process for forming weak collector

Patents Applicationslast 30 patents

Semiconductor Device Having a Superjunction Structure

Bipolar Semiconductor Device with Multi-Trench Enhancement Regions

Bipolar Semiconductor Device Having Localized Enhancement Regions

Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions

Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench...

IGBT Having an Inter-Trench Superjunction Structure

Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure

IGBT Having a Deep Superjunction Structure

IGBT Having Deep Gate Trench

IGBT with Buried Emitter Electrode

IGBT with Buried Emitter Electrode

Deep Gate Trench IGBT

VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS

Trench IGBT with depletion stop layer

Trench IGBT for highly capacitive loads

Trench IGBT with increased short circuit capability

Deep N diffusion for trench IGBT

High voltage non punch through IGBT for switch mode power supplies

IGBT with amorphous silicon transparent collector

Semiconductor device having increased switching speed

Angled implant for shorter trench emitter

Angled implant for shorter trench emitter

Trench IGBT

Process to create buried heavy metal at selected depth

Hydrogen implant for buffer zone of punch-through non EPI IGBT

Process for forming power MOSFET device in float zone, non-epitaxia...

Fast recovery diode and method for its manufacture