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Y10S148/116
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GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10
USPC classification
Y10S
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00
Metal treatment
Current Industry
Y10S148/116
Oxidation, differential
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Patents Grants
last 30 patents
Information
Patent Grant
Methods for reoxidizing an oxide and for fabricating semiconductor...
Patent number
8,790,982
Issue date
Jul 29, 2014
Micron Technology, Inc.
Li Li
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Structures including an at least partially reoxidized oxide material
Patent number
8,492,851
Issue date
Jul 23, 2013
Micron Technology, Inc.
Li Li
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
7,799,690
Issue date
Sep 21, 2010
Renesas Electronics Corporation
Yoshikazu Tanabe
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Ion-assisted oxidation methods and the resulting structures
Patent number
7,371,697
Issue date
May 13, 2008
Micron Technology, Inc.
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
7,250,376
Issue date
Jul 31, 2007
Renesas Technology Corp.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ion-assisted oxidation methods and the resulting structures
Patent number
7,119,033
Issue date
Oct 10, 2006
Micron Technology, Inc.
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
7,053,007
Issue date
May 30, 2006
Renesas Technology Corp.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device structures formed by ion-assisted oxidation
Patent number
7,049,664
Issue date
May 23, 2006
Micron Technology, Inc.
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
7,008,880
Issue date
Mar 7, 2006
Renesas Technology Corp.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,962,880
Issue date
Nov 8, 2005
Renesas Technology Corp.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,962,881
Issue date
Nov 8, 2005
Renesas Technology Corp.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,855,642
Issue date
Feb 15, 2005
Renesas Technology Corp.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ion-assisted oxidation methods and the resulting structures
Patent number
6,770,538
Issue date
Aug 3, 2004
Micron Technology, Inc.
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a DRAM transistor with a dual gate oxide tech...
Patent number
6,686,246
Issue date
Feb 3, 2004
Micron Technology, Inc.
Fernando Gonzalez
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,596,650
Issue date
Jul 22, 2003
Hitachi, Ltd.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,569,780
Issue date
May 27, 2003
Hitachi, Ltd.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a DRAM transistor with a dual gate oxide tech...
Patent number
6,548,340
Issue date
Apr 15, 2003
Micron Technology, Inc.
Fernando Gonzalez
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit drive using...
Patent number
6,528,431
Issue date
Mar 4, 2003
Hitachi, Ltd.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,518,201
Issue date
Feb 11, 2003
Hitachi, Ltd.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,518,202
Issue date
Feb 11, 2003
Hitachi, Ltd.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ion-assisted oxidation methods and the resulting structures
Patent number
6,429,496
Issue date
Aug 6, 2002
Micron Technology, Inc.
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,417,114
Issue date
Jul 9, 2002
Hitachi, Ltd.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ion-assisted oxidation methods and the resulting structures
Patent number
6,355,580
Issue date
Mar 12, 2002
Micron Technology, Inc.
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating different gate oxide thicknesses within the...
Patent number
6,335,262
Issue date
Jan 1, 2002
International Business Machines Corporation
Scott W. Crowder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor integrated circuit device
Patent number
6,239,041
Issue date
May 29, 2001
Hitachi, Ltd.
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a DRAM access transistor with dual gate oxide...
Patent number
6,204,106
Issue date
Mar 20, 2001
Micron Technology, Inc.
Fernando Gonzalez
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduction of surface leakage current by surface passivation of CdZn...
Patent number
6,168,967
Issue date
Jan 2, 2001
The Regents of the University of California
Mark A. Hoffbauer
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for poly-buffered locos without pitting formation
Patent number
6,096,613
Issue date
Aug 1, 2000
Acer Semiconductor Manufacturing Inc.
Shye-Lin Wu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Differential gate oxide thickness by nitrogen implantation for mixe...
Patent number
5,920,779
Issue date
Jul 6, 1999
United Microelectronics Corp.
Shih-Wei Sun
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a DRAM access transistor with dual gate oxide...
Patent number
5,863,819
Issue date
Jan 26, 1999
Micron Technology, Inc.
Fernando Gonzalez
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...
Publication number
20130309855
Publication date
Nov 21, 2013
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ION-ASSISTED OXIDATION METHODS AND THE RESULTING STRUCTURES
Publication number
20080203542
Publication date
Aug 28, 2008
Micron Technology, Inc.
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor intergrated circuit device
Publication number
20080045027
Publication date
Feb 21, 2008
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Ion-assisted oxidation methods and the resulting structures
Publication number
20070059943
Publication date
Mar 15, 2007
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20050227501
Publication date
Oct 13, 2005
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20050208731
Publication date
Sep 22, 2005
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Ion-assisted oxidation methods and the resulting structures
Publication number
20040266213
Publication date
Dec 30, 2004
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20040161945
Publication date
Aug 19, 2004
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20040157468
Publication date
Aug 12, 2004
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor intergrated circuit device
Publication number
20040157467
Publication date
Aug 12, 2004
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20030219995
Publication date
Nov 27, 2003
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating different gate oxide thickness within the sa...
Publication number
20030094660
Publication date
May 22, 2003
Scott W. Crowder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Ion-assisted oxidation methods and the resulting structures
Publication number
20020175382
Publication date
Nov 28, 2002
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of fabricating a dram transistor with a dual gate oxide tech...
Publication number
20020119619
Publication date
Aug 29, 2002
Fernando Gonzalez
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Ion-assisted oxidation methods and the resulting structures
Publication number
20020048888
Publication date
Apr 25, 2002
Li Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20020009898
Publication date
Jan 24, 2002
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20020004315
Publication date
Jan 10, 2002
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20010010975
Publication date
Aug 2, 2001
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20010009813
Publication date
Jul 26, 2001
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
A Method Of Fabricating A DRAM Transistor With A Dual Gate Oxide Te...
Publication number
20010008808
Publication date
Jul 19, 2001
Fernando Gonzalez
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating semiconductor integrated circuit device
Publication number
20010006853
Publication date
Jul 5, 2001
Yoshikazu Tanabe
H01 - BASIC ELECTRIC ELEMENTS