3089793

Information

• Patent Grant
• 3089793

• References
• Source

• Patent Number

  3,089,793

• Date Filed

  Not available

• Date Issued

  Tuesday, May 14, 1963
  62 years ago

• CPC

  • H01L23/488 - consisting of soldered or bonded constructions
  • C23C16/402 - Silicon dioxide
  • C30B31/185 - Pattern diffusion
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02164 - the material being a silicon oxide
  • H01L21/02216 - the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen
  • H01L21/02263 - deposition from the gas or vapour phase
  • H01L21/2252 - using predeposition of impurities into the semiconductor surface
  • H01L21/31608 - Deposition of SiO2
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S252/95 - Doping agent source material

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 430 - Radiation imagery chemistry: process, composition, or product thereof