3232792

Information

• Patent Grant
• 3232792

• References
• Source

• Patent Number

  3,232,792

• Date Filed

  Not available

• Date Issued

  Tuesday, February 1, 1966
  58 years ago

• CPC

  • C30B29/06 - Silicon
  • C01B33/00 - Silicon Compounds thereof
  • C01B33/02 - Silicon
  • C01B33/035 - by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal
  • C01B33/08 - Compounds containing halogen
  • C22B41/00 - Obtaining germanium
  • C23C16/06 - characterised by the deposition of metallic material
  • C23C16/22 - characterised by the deposition of inorganic material, other than metallic material
  • C23C16/44 - characterised by the method of coating
  • C23C16/46 - characterised by the method used for heating the substrate
  • C30B9/14 - by electrolysis
  • C30B13/00 - Single-crystal growth by zone-melting Refining by zone-melting
  • C30B25/02 - Epitaxial-layer growth
  • C30B30/02 - using electric fields
  • G05D23/1906 - using an analogue comparing device
  • G05D23/27 - with sensing element responsive to radiation
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/185 - Joining of semiconductor bodies for junction formation
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S117/917 - Magnetic
  • Y10T117/10 - Apparatus

• US Classifications

  • 427 - Coating processes
  • 257 - Active solid-state devices