3331716

Information

• Patent Grant
• 3331716

• References
• Source

• Patent Number

  3,331,716

• Date Filed

  Not available

• Date Issued

  Tuesday, July 18, 1967
  57 years ago

• CPC

  • H01L21/02164 - the material being a silicon oxide
  • C23C16/24 - Deposition of silicon only
  • C23C16/402 - Silicon dioxide
  • H01L21/02271 - deposition by decomposition or reaction of gaseous or vapour phase compounds
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/02639 - Preparation of substrate for selective deposition
  • H01L21/31612 - on a silicon body
  • Y10S148/006 - Apparatus
  • Y10S148/02 - Contacts, special
  • Y10S148/021 - Continuous process
  • Y10S148/043 - Dual dielectric
  • Y10S148/072 - Heterojunctions
  • Y10S148/118 - Oxide films
  • Y10S148/122 - Polycrystalline

• US Classifications

  • 118 - Coating apparatus
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 427 - Coating processes