3483096

Information

• Patent Grant
• 3483096

• References
• Source

• Patent Number

  3,483,096

• Date Filed

  Not available

• Date Issued

  Tuesday, December 9, 1969
  55 years ago

• CPC

  • H01L31/1035 - the devices comprising active layers formed only by AIIIBV compounds
  • H01L21/31654 - of semiconductor materials
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L23/485 - consisting of layered constructions comprising conductive layers and insulating layers
  • H01L27/14649 - Infra-red imagers
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L31/022408 - for devices characterised by at least one potential jump barrier or surface barrier
  • H01L24/45 - of an individual wire connector
  • H01L24/49 - of a plurality of wire connectors
  • H01L2224/45144 - Gold (Au) as principal constituent
  • H01L2224/49107 - on the semiconductor or solid-state body
  • H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
  • H01L2924/01019 - Potassium [K]
  • H01L2924/12036 - PN diode
  • H01L2924/14 - Integrated circuits
  • H01L2924/3011 - Impedance
  • Y10S148/005 - Antimonides of gallium or indium
  • Y10S148/02 - Contacts, special
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/08 - Infra-red
  • Y10S148/118 - Oxide films

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 205 - Electrolysis: processes, compositions used therein, and methods of preparing the compositions
  • 257 - Active solid-state devices