3615932

Information

• Patent Grant
• 3615932

• References
• Source

• Patent Number

  3,615,932

• Date Filed

  Not available

• Date Issued

  Tuesday, October 26, 1971
  53 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02129 - the material being boron or phosphorus doped silicon oxides
  • H01L21/02164 - the material being a silicon oxide
  • H01L21/0217 - the material being a silicon nitride not containing oxygen
  • H01L21/022 - the layer being a laminate, i.e. composed of sublayers
  • H01L21/02211 - the compound being a silane
  • H01L21/02271 - deposition by decomposition or reaction of gaseous or vapour phase compounds
  • H01L21/31612 - on a silicon body
  • H01L21/8222 - Bipolar technology
  • H01L23/29 - characterised by the material
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/043 - Dual dielectric
  • Y10S148/085 - Isolated-integrated
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/151 - Simultaneous diffusion

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices