3802967

Information

• Patent Grant
• 3802967

• References
• Source

• Patent Number

  3,802,967

• Date Filed

  Not available

• Date Issued

  Tuesday, April 9, 1974
  50 years ago

• CPC

  • H01L21/02625 - using melted materials
  • H01L21/0242 - Crystalline insulating materials
  • H01L21/02425 - Conductive materials
  • H01L21/02461 - Phosphides
  • H01L21/02463 - Arsenides
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/86 - the insulating body being sapphire, e.g. silicon on sapphire structure
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S148/017 - Clean surfaces
  • Y10S148/025 - Deposition multi-step
  • Y10S148/026 - Deposition thru hole in mask
  • Y10S148/056 - Gallium arsenide
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/107 - Melt
  • Y10S148/134 - Remelt
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S257/926 - Elongated lead extending axially through another elongated lead
  • Y10S438/967 - Semiconductor on specified insulator

• US Classifications

  • 257 - Active solid-state devices
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 438 - Semiconductor device manufacturing: process