3929527

Information

• Patent Grant
• 3929527

• References
• Source

• Patent Number

  3,929,527

• Date Filed

  Not available

• Date Issued

  Tuesday, December 30, 1975
  49 years ago

• CPC

  • H01L29/517 - the insulating material comprising a metallic compound
  • H01L21/02395 - Arsenides
  • H01L21/02463 - Arsenides
  • H01L21/02491 - Conductive materials
  • H01L21/02507 - Alternating layers
  • H01L21/02546 - Arsenides
  • H01L21/02631 - Physical deposition at reduced pressure
  • H01L21/28158 - Making the insulator
  • H01L21/28575 - on semiconductor bodies comprising AIIIBV compounds
  • H01L29/432 - Heterojunction gate for field effect devices
  • H01L29/66522 - with an active layer made of a group 13/15 material
  • H01L29/66939 - with an active layer made of a group 13/15 material
  • H01L29/7606 - Transistor-like structures
  • H01L29/802 - with heterojunction gate
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/169 - Vacuum deposition
  • Y10S438/968 - Semiconductor-metal-semiconductor

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process