Claims
- 1. A semiconductor device comprising:a semiconductor layer having an insulator region and a plurality of transistors extending over the insulator region, each transistor including a silicon region defining a source and a drain, a gate, a first oxide layer separating the source and drain from the gate, a second oxide layer extending over the gate, and conductive interconnects, at least one of said interconnects extending from the transistor through the second oxide layer; a plurality of pixel electrodes extending over a surface of the semiconductor layer; each pixel electrode conductively connected to the interconnect extending through the second oxide layer of a corresponding transistor; a bonding layer extending over the semiconductor layer; a supporting substrate, the bonding layer bonding the semiconductor layer to the supporting substrate; and a protective layer extending between the bonding layer and a surface of the semiconductor layer that is adjacent to the transistors and opposite the insulator region.
- 2. The semiconductor device of claim 1 wherein the plurality of transistors comprises a display circuit.
- 3. The semiconductor device of claim 1 wherein the semiconductor layer comprises a single crystal thin film layer.
- 4. The semiconductor device of claim 1 wherein the bonding layer comprises an adhesive layer.
- 5. The semiconductor device of claim 1 wherein the protective layer comprises an oxide layer.
- 6. The semiconductor device of claim 1 the semiconductor layer comprises single crystal silicon.
- 7. The semiconductor device of claim 1 wherein the supporting substrate comprises a glass substrate.
- 8. The semiconductor device of claim 1 wherein the bonding layer comprises an epoxy adhesive layer.
- 9. The semiconductor device of claim 1 further comprising a plurality of pixel electrodes.
- 10. The semiconductor device of claim 1 further comprising a plurality of CMOS circuits.
- 11. The semiconductor device of claim 1 wherein the protective layer comprises a nitrate layer.
- 12. The semiconductor device of claim 1, wherein the plurality of pixel electrodes extend over a surface of the semiconductor layer that is adjacent to the transistors and opposite the insulator region.
- 13. The semiconductor device of claim 1, wherein the plurality of pixel electrodes extend over a surface of the semiconductor layer that is adjacent to the insulator region and opposite the transistors.
- 14. A semiconductor device comprising:a semiconductor layer having a silicon region extending over an insulator region and having a plurality of transistors, each transistor including a source, a drain, a gate, and conductive interconnects; a bonding layer extending over the semiconductor layer; a supporting substrate, the bonding layer bonding the semiconductor layer to the supporting substrate; and a light shield extending between the bonding layer and a surface of the semiconductor layer that is adjacent to the silicon region and opposite the insulator region.
- 15. The semiconductor device of claim 14 wherein the plurality of transistors comprises a display circuit.
- 16. A semiconductor device comprising:a semiconductor layer having a silicon-on-insulator structure and having a plurality of transistors, each transistor including a source, a drain, a gate, and a conductive interconnects; a bonding layer extending over the semiconductor layer; a supporting substrate, The bonding layer bonding the semiconductor layer to the supporting substrate; and a light shield extending between the bonding layer and the semiconductor layer and covering each transistor.
RELATED APPLICATIONS
This application is a continuation of U.S. Ser. No. 08/579,122 filed Dec. 27, 1995 now U.S. Pat. No. 5,757,445, which is a continuation of U.S. Ser. No. 08/437,034 filed on May 8, 1995, now U.S. Pat. No. 5,499,124, which is a File Wrapper Continuation of U.S. Ser. No. 08/310,886, filed Sep. 22, 1994, now abandoned which is a Continuation of U.S. Ser. No. 08/108,528, filed Aug. 18, 1993, now U.S. Pat. No. 5,377,031, which is a Divisional of U.S. Ser. No. 07/970,675, filed Nov. 4, 1992, now U.S. Pat. No. 5,256,562, which is a continuation-in-part of U.S. Ser. No. 07/874,588 filed Apr. 24, 1992, now U.S. Pat. No. 5,376,561, which is a continuation-in-part of U.S. Ser. No. 07/834,849 filed Feb. 13, 1992, now U.S. Pat. No. 5,258,325, which is a Continuation-In-Part of U.S. Ser. No. 07/636,602 filed Dec. 31, 1990, now U.S. Pat. No. 5,206,749, and U.S. Ser. No. 07/643,552 filed Jan. 18, 1991, now U.S. Pat. No. 5,300,378, all of which are incorporated herein by reference.
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Continuations (4)
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Number |
Date |
Country |
Parent |
08/579122 |
Dec 1995 |
US |
Child |
09/082925 |
|
US |
Parent |
08/437034 |
May 1995 |
US |
Child |
08/579122 |
|
US |
Parent |
08/310886 |
Sep 1994 |
US |
Child |
08/437034 |
|
US |
Parent |
08/108528 |
Aug 1993 |
US |
Child |
08/310886 |
|
US |
Continuation in Parts (4)
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Number |
Date |
Country |
Parent |
07/874588 |
Apr 1992 |
US |
Child |
07/970675 |
|
US |
Parent |
07/834849 |
Feb 1992 |
US |
Child |
07/874588 |
|
US |
Parent |
07/636602 |
Dec 1990 |
US |
Child |
07/834849 |
|
US |
Parent |
07/643552 |
Jan 1991 |
US |
Child |
07/636602 |
|
US |