CHARGED PARTICLE BEAM WRITING METHOD AND APPARATUS

Abstract
A charged particle beam writing method includes irradiating a shot of a charged particle beam, and deflecting the charged particle beam of the shot using a plurality of deflectors arranged on an optical path of the charged particle beam to write a pattern on a target object, wherein any one of the plurality of deflectors controls deflection of a charged particle beam of a shot different from a shot which is controlled in deflection by another deflector in the same period.
Description

BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a conceptual diagram showing a configuration of a writing apparatus according to a first embodiment;



FIGS. 2A to 2D are diagrams for explaining proceedings of an electron beam when preparation for the next shot is performed upon completion of irradiation of one shot;



FIGS. 3A to 3D are diagrams for explaining proceedings of an electron beam when an electron beam writing method according to the first embodiment is performed;



FIG. 4 is a diagram for explaining signal distribution in the first embodiment;



FIG. 5 is a flow chart of a timing signal in the first embodiment;



FIG. 6 is a diagram showing control of deflectors and changes in voltage with respect to one shot;



FIG. 7 is a conceptual diagram showing a configuration of a writing apparatus according to a second embodiment;



FIG. 8 is a conceptual diagram showing a configuration of a writing apparatus according to a third embodiment;



FIGS. 9A to 9E are diagrams for explaining manners of an electron passing through deflectors which are not multistaged;



FIGS. 10A to 10E are diagrams for explaining a deflecting method according to the third embodiment;



FIG. 11 is a conceptual diagram showing a configuration of a writing apparatus according to a fourth embodiment;



FIG. 12 is a conceptual diagram showing a configuration of a writing apparatus according to a fifth embodiment; and



FIG. 13 is a conceptual view for explaining an operation of a conventional variable-shaped electron beam writing apparatus.


Claims
  • 1. A pattern writing method with using a charged particle beam comprising: irradiating a shot of a charged particle beam; anddeflecting the charged particle beam of the shot using a plurality of deflectors arranged on an optical path of the charged particle beam to write a pattern on a target object;wherein any one of the plurality of deflectors controls deflection of a charged particle beam of a shot different from a shot which is controlled in deflection by another deflector in the same period.
  • 2. The pattern writing method according to claim 1, wherein the plurality of deflectors are caused to perform a pipeline process with respect to shots of the charged particle beam.
  • 3. A pattern writing method with using a charged particle beam comprising: irradiating a shot of a charged particle beam;deflecting a charged particle of the beam to write a pattern on a target object;independently applying voltages to deflectors in accordance with movement of the charged particle, by using the deflectors obtained by dividing a base deflector to cause the charged particle to obtain a predetermined amount of deflection in a plurality of stages, when deflecting the charged particle;being begun to perform preparation for deflection of the next shot by at least another deflector when deflecting by one of the deflectors for a certain shot; andperforming control which charges an appropriate voltage as a sum of the deflectors to the charged particle irradiated, when deflecting the charged particle.
  • 4. A charged particle beam writing apparatus comprising: a first deflector which does not deflect a charged particle beam to set abeam-on state and which deflects the charged particle beam to set a beam-off state;a second deflector which deflects the charged particle beam to shape the beam; anda third deflector which deflects the charged particle beam to a predetermined position on a target object,wherein at least two deflectors of the first, second, and third deflectors control deflection of charged particle beams of different shots in the same period.
  • 5. The charged particle beam writing apparatus according to claim 4, further comprising a plurality of timing signal generating units which generate and output first, second, and third timing signals to sequentially deflect charged particle beams of same shot by the first, second, and third deflectors, respectively.
  • 6. The charged particle beam writing apparatus according to claim 5, wherein the plurality of timing signal generating units independently generate the first, second, and third timing signals.
  • 7. The charged particle beam writing apparatus according to claim 6, further comprising: a first voltage applying unit which receives the first timing signal and applies a voltage to the first deflector on the basis of the first timing signal;a second voltage applying unit which receives the second timing signal and applies a voltage to the second deflector on the basis of the second timing signal; anda third voltage applying unit which receives the third timing signal and applies a voltage to the third deflector on the basis of the third timing signal.
  • 8. The charged particle beam writing apparatus according to claim 7, further comprising: a first buffer which temporarily stores a first deflection signal to be output to the first voltage applying unit;a second buffer which temporarily stores a second deflection signal to be output to the second voltage applying unit; anda third buffer which temporarily stores a third deflection signal to be output to the third voltage applying unit.
  • 9. The charged particle beam writing apparatus according to claim 8, further comprising: a distribution unit which generates the first, second, and third deflection signals to distribute the first, second, and third deflection signals to the first, second, and third buffers, respectively.
  • 10. The charged particle beam writing apparatus according to claim 4, wherein the first, second, and third deflectors are caused to perform a pipeline process with respect to shots of the charged particle beam.
  • 11. A charged particle beam writing apparatus comprising: an irradiation unit which irradiates a charged particle beam;deflectors of a plurality of stages each having a deflector length which is shorter than a deflector length to cause each charged particle in the charged particle beam to obtain a predetermined amount of deflection; anda voltage applying unit which independently applies voltages to the deflectors of the plurality of stages in accordance with movement of the charged particle.
  • 12. The charged particle beam writing apparatus according to claim 11, wherein the deflectors have stages separated from one another.
Priority Claims (1)
Number Date Country Kind
2005-361338 Dec 2005 JP national