Patent Application
20050221622
This application is based on and claims priority of Japanese Patent Application No. 2004-103466 filed on Mar. 31, 2004, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a deposition method and a semiconductor device, particularly to a deposition method for forming an insulating film that covers wirings mainly made of copper film and has low dielectric constant and a semiconductor device having the insulating film formed thereon.
2. Description of the Related Art
In recent years, higher data transfer speed has been required with higher integration and higher density of a semiconductor integrated circuit device, and a multilayer wiring structure with small RC delay time has been demanded. To achieve such multilayer wiring structure, wirings mainly made of copper having a small electric resistance are used as wirings, and an insulating film having a low dielectric constant (hereinafter, referred to as a low dielectric constant insulating film) is used as a barrier insulating film covering the wirings mainly made of copper and/or a primary insulating film on the barrier insulating film.
A deposition method by a coating method and a deposition method by a plasma-enhanced CVD method are known as a deposition method for forming the low dielectric constant insulating film. Although an insulating film deposited by the plasma-enhanced CVD method has a larger relative dielectric constant comparing to the insulating film deposited by the coating method, it has higher mechanical strength and smaller moisture content, so that research and development of a deposition method of the low dielectric constant insulating film by the plasma-enhanced CVD method has been diligently done.
Patent Documents 1, 2, 3 and the like, for example, describe the deposition method of the low dielectric constant insulating film such as the barrier insulating film and the primary insulating film on the barrier insulating film by the plasma-enhanced CVD method.
However, as higher driving frequency and data transfer speed have been demanded and wiring patterns become finer in recent years, formation of an interlayer insulating film having an even lower relative dielectric constant is necessary. For example, when the driving frequency exceeds GHz and the dimension of a wiring pattern becomes 65 nm or less, the relative dielectric constant of 2.6 or less, preferably 2.4 or less, is necessary. In this case, it is necessary that the relative dielectric constant of the barrier insulating film covering copper be further reduced while maintaining a copper diffusion preventing function. In addition, a film having high mechanical strength despite a low relative dielectric constant is demanded.
In the present invention, it is an object to provide a deposition method and a semiconductor device, where is capable of an improvement of mechanical strength, an improvement of their moisture absorbing characteristic, and an achievement of a lower dielectric constant in a barrier insulating film and/or a primary insulating film thereon, particularly regarding the barrier insulating film is capable of both a maintenance of the copper diffusion preventing function and further reduction of relative dielectric constant.
According to experiments conducted by the inventors of the present invention, in a method where deposition gas having silicon-containing organic compound as primary constituent gas or deposition gas having silicon-containing organic compound and oxidizing gas as primary constituent gas is transformed into plasma to deposit a low dielectric constant insulating film, when deposition is performed by using only cyclic siloxane having at least one of methyl group and methoxy group as the silicon containing organic compound, it results in obtaining only an insulating film which has a white turbidity, a low mechanical strength and high moisture absorbing characteristic despite a low relative dielectric constant. On the other hand, the inventors found out that when chain siloxane or organic silane having at least one of methyl group and methoxy group was added to the cyclic siloxane having at least one of methyl group and methoxy group, the white turbidity did not occur although the relative dielectric constant was increased corresponding to an added amount thereof. Consequently, it was made clear that the mechanical strength could be improved, the moisture absorbing characteristics could be improved and the relative dielectric constant could be maintained low by adjusting the flow rate of chain siloxane or organic siloxane to cyclic siloxane. Further, it was made clear that the film also had the copper diffusion preventing function. Particularly, it was made clear that the use of siloxane or organic silane containing methoxy group was effective in increasing the mechanical strength.
In the present invention, deposition is performed by a plasma-enhanced CVD method using a deposition gas having a gas mixture of the cyclic siloxane having at least one of methyl group and methoxy group and the chain siloxane having at least one of methyl group and methoxy group as a primary constituent gas. Alternatively, deposition is performed by a plasma-enhanced CVD method using a deposition gas having a gas mixture of the cyclic siloxane having at least one of methyl group and methoxy group and the organic silane having at least one of methyl group and methoxy group as a primary constituent gas. Alternatively, deposition is performed by a plasma-enhanced CVD method using a deposition gas where oxidizing gas such as H2O is further added to the gas mixture.
It results in prevention of the white turbidity of an insulating film (formed film) to be formed and maintenance of the high mechanical strength, and further it results in improvement of the moisture absorbing characteristics of the formed film and reduction of the relative dielectric constant of the formed film to 2.6 or less. Further, it is possible to allow the insulating film to have the copper diffusion preventing function, additionally.
In this case, by adding methyl alcohol or ethyl alcohol to the above-described gas combination, CH3, C2H5 or the like is taken in the formed film to further reduce the relative dielectric constant and bridge reaction in the formed film is enhanced by oxidation due to OH group to further increase the mechanical strength of the formed film.
Additionally, by adding inert gas as diluting gas to the above-described deposition gas, rapid reaction of deposition gas can be suppressed and vapor phase reaction can be suppressed. This prevents the reduction of the mechanical strength and adhesion strength of the formed film, and also prevents the generation of particles. Note that it is preferable to add an inert gas by an appropriate amount because too much addition of the inert gas results in increase of the relative dielectric constant.
In this case, this deposition method is applied for a semiconductor device in which copper wirings and the like are formed. And the insulating film having the above-described characteristic is used as a barrier insulating film covering the copper wirings and the like, as an insulating film directly covering the copper wirings and the like, or as a primary insulating film on the barrier insulating film covering the copper wirings and the like. And the above-described insulating film or the barrier insulating film and the primary insulating film are used as an insulating film that constitutes a wiring interlayer insulating film or a wiring buried insulating film. Thus, high-speed performance of the semiconductor device can be improved.
Embodiments of the present invention will be explained with reference to the drawings hereinafter.
The parallel plate type plasma-enhanced CVD deposition apparatus 101 is made up of a deposition section 101A, which is a place of forming the insulating film on a substrate 21 subject to deposition by plasma gas, and a deposition gas supply section 101B having supply sources of a plurality of gases that constitute the deposition gas.
The deposition section 101A, as shown in
The chamber 1 is provided with a pair of an upper electrode (first electrode) 2 and a lower electrode (second electrode) 3 which oppose to each other. A high-frequency power supply source (RF power source) 7, which supplies high-frequency power having the frequency of 13.56 MHz, is connected to the upper electrode 2, and a low-frequency power supply source 8, which supplies low-frequency power having the frequency of 380 kHz, is connected to the lower electrode 3. The power supply sources 7, 8 supply power to the upper electrode 2 and the lower electrode 3, and thus the deposition gas is transformed into plasma. The upper electrode 2, the lower electrode 3, and the power sources 7, 8 constitute plasma generation means that transforms the deposition gas into plasma.
The upper electrode 2 serves as a distributor of the deposition gas. A plurality of through holes are formed in the upper electrode 2, and openings of the through holes at the opposing surface to the lower electrode 3 are discharge ports (introduction ports) of the deposition gas. The discharge ports of the deposition gas or the like is connected to the deposition gas supply section 101B via piping 9a. Alternatively, there are cases where the upper electrode 2 is provided with a heater (not shown) depending on circumstances. The heater is used to heat the upper electrode 2 to the temperature of about 100° C. to 200° C. during deposition to prevent particles made of reactive products of the deposition gas or the like from adhering to the upper electrode 2.
The lower electrode 3 serves as a holding stage for the substrate 21 subject to deposition, and is provided with a heater 12 heating the substrate 21 subject to deposition on the holding stage.
The deposition gas supply section 101B is provided with a supply source of cyclic siloxane (first silicon containing organic compound) having at least one of methyl group and methoxy group, a supply source of chain siloxane (second silicon containing organic compound) having at least one of methyl group and methoxy group, a supply source of organic silane where at least one of methyl group and methoxy group has bonded silicon, a supply source of oxidizing gas made of any one of H2O, O2, N2O and CO2, a supply source of alcohol such as methyl alcohol (CH3OH) and ethyl alcohol (C2H5OH), a supply source of diluting gas, and a supply source of nitrogen (N2).
The gases are accordingly supplied into the chamber 1 through branch piping (9b to 9h) and piping 9a to which all the branch piping (9b to 9h) are connected. Flow rate adjusting means (11a to 11g) and opening/closing means (10b to 10o) for controlling communication/non-communication of the branch piping (9b to 9h) are installed halfway the branch piping (9b to 9h), and opening/closing means 10a for opening/closing the piping 9a is installed halfway the piping 9a.
Further, to purge residual gas in the branch piping (9b to 9g) by allowing N2 gas to circulate, opening/closing means (lop to 10u) for controlling communication/non-communication between the branch piping 9h connected to the supply source of N2 gas and the other branch piping (9b to 9g) are installed. Note that N2 gas purges not only the residual gas in the branch piping (9b to 9b) but also the residual gas in the piping 9a and the chamber 1. In addition, there are cases where N2 gas is used as diluting gas.
According to the above-described deposition apparatus 101, it comprises the supply source of cyclic siloxane, the supply source of chain siloxane, the supply source of organic silane, the supply source of oxidizing gas, the supply source of alcohol, and the supply source of diluting gas, and also comprises plasma generation means (2, 3, 7, 8) that transform the deposition gas into plasma.
With this configuration, it is possible to form a barrier insulating film or a low dielectric constant insulating film, where the mechanical strength is improved, the moisture absorbing characteristic is improved, and the relative dielectric constant is reduced to 2.6 or less while the copper diffusion preventing function is maintained, as shown in the examples below.
Then, there exists means for generating plasma by the upper electrode 2 and the lower electrode 3 of the parallel plate type, for example, as the plasma generation means. The upper electrode 2 and the lower electrode 3 are subject to respective connections of the power supply sources (7, 8) that supply electric powers having two frequencies of high and low to the upper electrode 2 and the lower electrode 3, respectively. Therefore, the electric powers having two frequencies of high and low are respectively applied to respective electrodes (2,3) and thus plasma can be generated. Of these, at least the insulating film formed by applying low frequency electric power is much denser. At least the insulating film formed by applying high-frequency electric power has an even lower relative dielectric constant.
Next, the following gases can be used as representative examples regarding the deposition gas used in the present invention, which are the first silicon containing organic compound having cyclic siloxane bond and at least one of methyl group and methoxy group, the second silicon containing organic compound having straight-chain siloxane bond and at least one of methyl group and methoxy group, organic silane having at least one of methyl group and methoxy group, oxidizing gas, alcohol, and diluting gas.
(i) The first silicon containing organic compound having cyclic siloxane bond and at least one of methyl group and methoxy group The followings are examples of cyclic siloxane.
(ii) The Second Silicon Containing Organic Compound Having Straight-Chain Siloxane Bond and at least One of Methyl Group and Methoxy Group
The followings are examples of chain siloxane.
(iii) Organic silane having at least one of methyl group and methoxy group
(iv) Oxidizing gas
(v) Alcohol
Note that alcohol is vaporized in room temperature or by heating, and used in a gaseous state.
(vi) Diluting gas
Significance of using the above-described gases will be described as follows.
According to the experiments conducted by the inventors of the present invention, the followings were made clear in the deposition method of the low dielectric constant insulating film by transforming into plasma the deposition gas which contains the primary constituent gas composing of the silicon containing organic compound, or of the silicon containing organic compound and the oxidizing gas.
Specifically, when deposition is performed by using only cyclic siloxane having at least one of methyl group and methoxy group as the silicon containing organic compound, it results in formation of only an insulating film which shows white turbidity, is low in mechanical strength, and is high in moisture absorbing characteristic despite a low relative dielectric constant. On the other hand, when chain siloxane or organic silane having at least one of methyl group and methoxy group is added to the cyclic siloxane having at least one of methyl group and methoxy group, white turbidity does not occur although the relative dielectric constant increases corresponding to an added amount thereof.
After conducting such experiment for several times, it was made clear that when adjusting the amount of chain siloxane or organic siloxane to be added to cyclic siloxane, it led to improvement of the mechanical strength, improvement of the moisture absorbing characteristics, and maintenance of the low relative dielectric constant. Further, it was also made clear that it led to a grant of the copper diffusion preventing function to the formed film.
Particularly, it was made clear that the use of siloxane or organic silane containing methoxy group was effective regarding improvement of the mechanical strength.
Furthermore, it was made clear that use of compound containing fluorine (F) led to further reduction of the relative dielectric constant and further improvement of the mechanical strength.
In this case, CH3, C2H5 or the like is taken in the formed film to further reduce the relative dielectric constant by further adding methyl alcohol or ethyl alcohol to the above combination of gases, and bridge reaction in the formed film is enhanced by oxidation due to OH group, and thus the mechanical strength can be further increased.
Additionally, an addition of inert gas results in suppression of rapid reaction of deposition gas and thus in suppression of vapor phase reaction. If the vapor phase reaction occurs, the film quality of the formed film deteriorates drastically. For example, the mechanical strength or the adhesion strength of the formed film deteriorates. Moreover, it causes generation of particles, which is not preferable. Such problems can be prevented by suppressing the vapor phase reaction. Note that it is preferable to add an appropriate amount of inert gas because too much addition of inert gas results in a higher relative dielectric constant.
Next, combinations of constituent gases in the deposition gas will be explained referring to
Next, deposition experiments conducted by the inventors of the present invention will be explained.
A silicon oxide film was deposited on an Si substrate by a plasma enhanced CVD method (PECVD method) under the following deposition condition I. The deposition gas falls under the combination of 4-a described above. Specifically, OMCTS was used as the first silicon containing organic compound, HMDSO was used as the second silicon containing organic compound, H2O was used as the oxidizing gas, and He was used as the diluting gas.
In the deposition, 1 minute and 30 seconds were taken for time (stabilizing period) required in displacing gas inside the chamber from gas introduction to deposition start (plasma excitation), and the upper electrode 2 is heated at 100° C. to prevent reactive products from adhering to the upper electrode 2.
Deposition Condition I
Deposition Gas
(i) Relationship between the HMDSO Flow Rate of Deposition Gas and the Relative Dielectric Constant, the Dielectric Breakdown Field, the Deposition Rate of an Insulating Film Formed on an Si Substrate
(a) Relationship between the HMDSO Flow Rate of Deposition Gas and the Relative Dielectric Constant of the Formed Film
According to
The low value of relative dielectric constant of 2.6 or less was obtained in the total survey range of the HMDSO flow rate from 20 to 80 sccm.
Note that the refraction index is shown as a guidepost for the density of the formed film. The higher the refraction index, the denser the film. The same applies to the followings and its explanation will be omitted.
(b) Relationship between the HMDSO Flow Rate of Deposition Gas and the Dielectric Breakdown Field of the Formed Film
According to
(c) Relationship between the HMDSO Flow Rate of Deposition Gas and the Deposition Rate of the Formed Film
According to
(ii) Relationship between the H2O Flow Rate of Deposition Gas and the Relative Dielectric Constant, the Dielectric Breakdown Field, the Deposition Rate of an Insulating Film Formed on an Si Substrate
(a) Relationship between the H2O Flow Rate of Deposition Gas and the Relative Dielectric Constant of the Formed Film
According to
(b) Relationship between the H2O Flow Rate of Deposition Gas and the Dielectric Breakdown Field of the Formed Film
According to
(c) Relationship between the H2O Flow Rate of Deposition Gas and the Deposition Rate of a Formed Film
According to
(iii) Relationship between the Gas Pressure of Deposition Gas and the Relative Dielectric Constant, the Dielectric Breakdown Field, and the Deposition Rate of a Formed Film
(a) Relationship between the Gas Pressure of Deposition Gas and the Relative Dielectric Constant of an Insulating Film Formed on an Si Substrate
According to
As described, the low value of the relative dielectric constant of 2.6 or less was obtained in the total survey range of the gas pressure from 1.0 to 2.0 Torr.
(b) Relationship between the Gas Pressure of Deposition Gas and the Dielectric Breakdown Field of the Formed Film
According to
As described above, the field became 5 MV/cm or more in the total survey range of the gas pressure from 1.0 to 2.0 Torr. It was made clear that the film had sufficient dielectric breakdown voltage as the barrier insulating film.
(c) Relationship between the Gas Pressure of Deposition Gas and the Deposition Rate of the Formed Film
According to
(iv) Relationship between the High-Frequency Power (Frequency: 13.56 MHz) Applied to Deposition Gas and the Relative Dielectric Constant, the Dielectric Breakdown Field, and the Deposition Rate of an Insulating Film Formed on Si Substrate
(a) Relationship between the High-Frequency Power (Frequency: 13.56 MHz) and the Relative Dielectric Constant of the Formed Film
According to
(b) Relationship between the High-Frequency Power (Frequency: 13.56 MHz) and the Dielectric Breakdown Field of the Formed Film
According to
As described above, the field became 5 MV/cm or more in the total survey range of the high-frequency from 340W to 700W. It was made clear that the film had sufficient dielectric breakdown voltage as the barrier insulating film.
(c) Relationship between the High-Frequency Power (Frequency: 13.56 MHz) and the Deposition Rate of the Formed film.
According to
Next, a silicon oxide film was deposited on the Si substrate by the plasma enhanced CVD method (PECVD method) under the following deposition condition II. In the deposition gas, DMTMDSO that is the chain siloxane having methoxy group was used as the second silicon containing organic compound. The deposition experiment result is shown below.
Deposition Condition II
Deposition Gas
Plasma Excitation Condition
(v) Relationship between the H2O Flow Rate of Deposition Gas and the Relative Dielectric Constant, the Dielectric Breakdown Field and the Deposition Rate of an Insulating Film Formed on an Si Substrate
(a) Relationship between the H2O Flow Rate of Deposition Gas and the Relative Dielectric Constant of the Formed Film
According to
(b) Relationship between the H2O Flow Rate of Deposition Gas and the Dielectric Breakdown Field of the Formed Film
According to
(c) Relationship between the H2O Flow Rate of Deposition Gas and the Deposition Rate of the Formed Film
According to
(vi) Relationship between the Gas Pressure of Deposition Gas and the Relative Dielectric Constant, the Dielectric Breakdown Field and the Deposition Rate of an Insulating Film Formed on an Si Substrate
(a) Relationship between the Gas Pressure of Deposition Gas and the Relative Dielectric Constant of the Formed Film
According to
(b) Relationship between the Gas Pressure of Deposition Gas and the Dielectric Breakdown Field of the Formed Film
According to
(c) Relationship between the Gas Pressure of Deposition Gas and the Deposition Rate of the Formed Film
According to
(d) Others
In the deposition under the deposition condition II, unlike the deposition under the deposition condition I, DMTMDSO containing methoxy group is used as the second silicon containing compound, so that the mechanical strength of the formed film can be further increased. This is considered to be caused by the behavior of oxygen contained in the methoxy group.
As described above, according to the first embodiment, deposition is performed by a plasma-enhanced CVD method using the deposition gas, which contains OMCTS (cyclic siloxane) having methyl group and HMDSO having methyl group or DMTMDSO (chain siloxane) having methoxy group as the silicon containing compound, and thus the white turbidity of the insulating film to be formed can be prevented to increase the mechanical strength, the absorbing characteristic can be improved, and the relative dielectric constant of 2.6 or less can be maintained.
The present invention has been explained above in detail based on the first embodiment, but the scope of the invention is not limited to the examples specifically shown in the above-described embodiment, and modifications of the above-described embodiment within a scope without departing from the gist of the invention are incorporated in the scope of the present invention.
For example, the ratio of the flow rate of the second silicon containing compound to the flow rate of the first silicon containing compound is set to 1:1 in the first embodiment, but the ratio can be appropriately changed. In this case, when its ratio is made smaller, the ratio of the first silicon containing compound relatively increases, and thus the relative dielectric constant becomes small, but the white turbidity occurs. On the contrary, when its ratio is made larger, the ratio of the second silicon containing compound relatively increases, and thus the white turbidity does not occur and the mechanical strength increases, but the relative dielectric constant becomes larger. Therefore, it is preferable that the ratio be set to an appropriate range to prevent problems.
Further, other compound having siloxane bond described in the first embodiment or methyl silane (SiHn(CH3)4-n: n=0, 1, 2, 3) can be used instead of HMDSO and DMTMDSO that were used in the first embodiment. Since the first embodiment shows the examples of other compound having siloxane bond and methyl silane, they are omitted here.
Furthermore, the deposition gas may be one containing methyl alcohol (CH3OH) or ethyl alcohol (C2H5OH).
Still further, inert gas containing either argon (Ar) or nitrogen (N2) instead of helium (He) may be added as diluting gas to the deposition gas.
Next, the semiconductor device and the method of manufacturing the device according to the second embodiment will be described referring to
The semiconductor device has a dual damascene structure as shown in
In this embodiment, the deposition condition I are applied for the deposition of each primary insulating film of the lower wiring-buried insulating film 34, the wiring interlayer insulating film 42, and the upper-wiring buried insulating film 45.
In the method of manufacturing the semiconductor device, the substrate 31 is carried into the chamber 1 of a deposition apparatus 101 first, and is held on a substrate holder 3. Subsequently, the substrate 31 is heated and maintained at the temperature of 350° C. Then, as shown in
Consequently, OMCTS, HMDSO, H2O, and He are transformed into plasma. This state is held for a predetermined period of time to form a primary insulating film 32 made of SiOCH film having the film thickness of about 1 μm, which constitutes the lower wiring-buried insulating film 34, on the substrate (substrate subject to deposition) 31. Note that the SiOCH film is an insulating film containing Si, O, C, and H therein.
Subsequently, a barrier insulating film 33 that constitutes the lower wiring-buried insulating film 34 is formed on the primary insulating film 32 by the plasma-enhanced CVD method. As the barrier insulating film 33, a silicon oxide film deposited by other deposition condition can be used representatively, and a silicon oxynitride film or a silicon nitride film can be also used. These films are a little higher in relative dielectric constant, but are higher in copper diffusion preventing function and mechanical strength. The same also applies to the barrier insulating film to be deposited as follows.
Next, as shown in
Next, as shown in
Specifically, to form the wiring interlayer insulating film 42, the substrate 31 shown in
Next, a primary insulating film 40 made of SiOCH film having the film thickness of about 500 nm is formed on the barrier insulating film 39 under the same deposition condition as the deposition condition of the primary insulating film 32 of
With the above process, the wiring interlayer insulating film 42 made up of the barrier insulating film 39, the primary insulating film 40, and the barrier insulating film 41 is formed.
Next, the upper wiring-buried insulating film 45 is formed on the wiring interlayer insulating film 42. Specifically, to form the upper wiring-buried insulating film 45, a primary insulating film 43 made of SiOCH film, which has low relative dielectric constant and the film thickness of about 500 nm, is formed on the barrier insulating film 41 under the same deposition condition as the deposition condition of the primary insulating film 32 of
With the above process, the upper wiring-buried insulating film 45 made up of the primary insulating film 43 and the barrier insulating film 44 is formed.
Next, description will be made for a method of forming the connecting conductors and the upper wirings that are mainly made of copper film, by a well-known dual damascene method.
Firstly, as shown in
Next, as shown in
Next, as shown in
Next, a barrier insulating film 56 is formed on the entire surface. Thus, the semiconductor device is completed.
As described above, according to the second embodiment, in the method of manufacturing the semiconductor device where the lower wiring-buried insulating film 34 in which the lower wirings (38a, 38b) are buried, the upper wiring-buried insulating film 45 in which the upper wirings (55a, 55b) are buried, and the wiring interlayer insulating film 42 sandwiched thereby are formed, each primary insulating film (32, 40, 43) of the lower wiring buried insulating film 34, the wiring interlayer insulating film 42, and the upper wiring buried insulating film 45 is deposited by the plasma-enhanced CVD method using deposition gas composing of gas mixture, where OMCTS (cyclic siloxane) having methyl group and HMDSO (chain siloxane) having methyl group are combined, and H2O (oxidizing gas) and He (diluting gas) which are further added to the gas mixture.
Therefore, it is possible to prevent the white turbidity of the formed primary insulating film (32, 40, 43) to increase the mechanical strength, to improve the absorbing characteristics of the primary insulating film (32, 40, 43), and to maintain the relative dielectric constant of the primary insulating film (32, 40, 43) as low as 2.6 or less. Consequently, high-speed performance of the semiconductor device can be improved.
Further, by adding inert gas as the diluting gas to the above-described deposition gas, rapid reaction of deposition gas can be suppressed and vapor phase reaction can be suppressed. This prevents the reduction of the mechanical strength and adhesion strength of the formed film, and also prevents the generation of particles. Note that it is preferable to add an appropriate amount of the inert gas because too much addition of the inert gas results in increase of the relative dielectric constant.
The present invention has been explained above in detail based on the second embodiment, but the scope of the invention is not limited to the examples specifically shown in the above-described embodiment, and modifications of the above-described embodiment within a scope without departing from the gist of the invention are incorporated in the scope of the present invention.
For example, the deposition condition I are used as the deposition condition for the primary insulating films (32, 40, 43), but the deposition condition II or other deposition condition surveyed in the first embodiment may be used.
In
Next, the method of manufacturing the semiconductor device that is the third embodiment will be explained.
The semiconductor device shown in
As described above, according to the third embodiment, in the method of manufacturing the semiconductor device for formation of the lower wiring-buried insulating film 34 in which the lower wirings (38a, 38b) are buried, the upper wiring buried insulating film 45 in which the upper wirings (55a, 55b) are buried, and the wiring interlayer insulating film 42 sandwiched between them, the single layer insulating films (61, 62, 63) constituting the lower wiring-buried insulating film 34, the wiring interlayer insulating film 42, and the upper wiring-buried insulating film 45 are deposited respectively by the plasma-enhanced CVD method using deposition gas that contains gas mixture where the cyclic siloxane having methyl group and the chain siloxane or organic silane having methyl group are combined as the silicon containing organic compound.
Therefore, it is possible to prevent the white turbidity of the formed primary insulating film (61, 62, 63) to increase the mechanical strength, to improve the absorbing characteristic of the formed films, and to maintain the relative dielectric constant of the primary insulating films (61, 62, 63) as low as 2.6 or less, similar to the first embodiment. Consequently, high-speed performance of the semiconductor device can be improved. Furthermore, since the formed insulating films (61, 62, 63) have the copper diffusion preventing function, they are primary insulating films having low dielectric constant and also serve as the barrier insulating films to copper.
Accordingly, only the single layer insulating films (61, 62, 63) are available as the lower wiring-buried insulating film 34, the wiring interlayer insulating film 42, and the upper wiring-buried insulating film 45, and thus the deposition of the barrier insulating films can be omitted. As a result, the manufacturing process can be simplified.
The semiconductor device being the fourth embodiment has the same laminated structure as the semiconductor device shown in
On the other hand, in the method of manufacturing the semiconductor device being the fourth embodiment, the deposition condition I, the deposition condition II of this embodiment or other deposition condition surveyed in the first embodiment are used for the deposition of respective barrier insulating films (65, 66, 68, 70, 71) that severally belong to the lower wiring-buried insulating film 34, the wiring interlayer insulating film 42, and the upper wiring-buried insulating film 45, unlike the second embodiment. In this case, insulating films having much lower dielectric constant can be used as the primary insulating films (64, 67, 69). For example, a porous insulating film formed by a series of processes of the deposition of the CVD method and post-treatment such as heating where the formed film is transformed into porous, or a coating insulating film formed by a coating method can be used.
As described above, in the method of manufacturing the semiconductor device for forming the lower wiring-buried insulating film 34, the upper wiring-buried insulating film 45, and the wiring interlayer insulating film 42 sandwiched between them, respective barrier insulating films (65, 66, 68, 70, 71) constituting the lower wiring buried insulating film 34, the wiring interlayer insulating film 42, and the upper wiring buried insulating film 45 are deposited by the plasma-enhanced CVD method using deposition gas that contains gas mixture where the cyclic siloxane having methyl group and the chain siloxane or organic silane having methyl group are combined as the silicon containing organic compound.
Therefore, as described in the first embodiment, it is possible to maintain the relative dielectric constant at 2.6 or less while respective barrier insulating films (65, 66, 68, 70, 71) constituting the lower wiring-buried insulating film 34, the wiring interlayer insulating film 42, and the upper wiring-buried insulating film 45 are allowed to have the copper diffusion preventing function. Thus, by using an insulating film having even lower relative dielectric constant for the primary insulating films as well, the primary insulating films can lead to further reducing the relative dielectric constant of the lower wiring-buried insulating film 34, the wiring interlayer insulating film 42, and the upper wiring-buried insulating film 45. Consequently, high-speed performance of the semiconductor device can be improved.
The present invention has been explained above in detail based on the fourth embodiment, but the scope of the invention is not limited to the examples specifically shown in the above-described embodiment, and modifications of the above-described embodiment within a scope without departing from the gist of the invention are incorporated in the scope of the present invention.
According to the present invention, by performing deposition by the plasma-enhanced CVD method using deposition gas having gas mixture as primary constituent gas, in which cyclic siloxane having at least one of methyl group and methoxy group is combined with chain siloxane having at least one of methyl group and methoxy group, deposition gas having gas mixture as primary constituent gas, in which cyclic siloxane having at least one of methyl group and methoxy group is combined with organic silane having at least one of methyl group and methoxy group, or deposition gas in which oxidizing gas such as H2O is added to the gas mixture, the white turbidity of the insulating film to be formed is prevented to increase the mechanical strength, the absorbing characteristic is improved, and the relative dielectric constant of 2.6 or less can be maintained while the copper diffusion preventing function is maintained.
This deposition method is applied for the semiconductor device on which copper wirings and the like are formed, and the insulating films having the above-described property can be used as the barrier insulating film covering the copper wirings or the like, as the insulating film directly covering the copper wirings or the like, or as the primary insulating film on the barrier insulating film covering the copper wirings or the like. Furthermore, it is also possible to use the above-described insulating film, the barrier insulating film, and the primary insulating film as insulating films constituting the wiring interlayer insulating film or the wiring-buried insulating film.
With this method, the semiconductor device can follow the driving frequency exceeding GHz and the dimension of wiring pattern of 65 nm or less without reducing the performance of the semiconductor device.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2004-103466 | Mar 2004 | JP | national |
