B. Luther et al., 1993 VMIC Conference, Jun. 8-9, 1993, pp. 15-21. |
Palmans et al., Conf. Proc. ULSI-X, Materials Research Society, pp. 87-94, (no month) 1995. |
Cho et al. MRS Bulletin, pp. 31-38, Jun. 1993. |
Mak, MRS Bulletin, pp. 55-62, Aug, 1994. |
"Copper Interconnection with Tungsten Cladding for ULSI"; J.S.H. Cho et al.; VLSI Tech. Symp.; 1991; pp. 39-40. (no month). |
"Encapsulated Copper Interconnection Devices Using Sidewall Barriers;" Donald S. Gardner et al.; 1991 VMIC Conference; Jun. 11-12, 1991; pp. 99-108. |
"Planar Copper-Polyimide Back End Of The Line Interconnections For ULSI Devices;" B. Luther et al.; 1993 VMIC Conference; Jun. 8-9, 1993; pp. 15-21. |
"Electroless Cu for VLSI;" James S.H. Cho et al.; MRS Bulletin/Jun. 1993; pp. 31-38. |
"Electroless Copper Deposition on Metals and Metal Silicides;" Cecilia Y. Mak; MRS Bulletin/Aug. 1994; pp. 55-62. |
"Development Of An Electroless Copper Deposition Bath For Via Fill Applications On TiN Seed Layers;" Roger Palmans et al.; Conf. Proc. ULSI-X; Materials Research Society; 1995; pp.87-94. (no month). |
"Selective and Blanket Electroless Cu Plating Initiated By Contact Displacement For Deep Submicron Via Contact Filling;" Dubin et al.; VMIC Conf.; Jun. 27-29, 1995; pp. 315-321. |
"0.35 um Cu-Filled Via Holes By Blanket Deposited Electroless Copper On Sputtered Seed Layer;" Yosi Shacham-Diamand et al.; VMIC Conf.; Jun. 27-29, 1995; pp.334-336. |
"Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide;" Shi-Qing Wang; MRS Bulletin/Aug. 1994; pp. 30-40. |
"Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing;" S.P. Murarka et al.; MRS Bulletin/Jun. 1993; pp. 46-51. |
"Electrochemically Deposited Diffusion Barriers;" M. Paunovic; et al.; J. Electrochem. Soc., vol. 141 No. 7; Jul. 1994; pp. 1843-1850. |
"Electroless Copper Deposition For Multilevel Metallization;" S. Simon Wong et al.; Mat. Res. Soc. Symp. Proc. vol. 203; 1991 Materials Research Society; pp. 347-356. (no month). |
"Electroless plating of copper at a low pH level;" R. Jagannathan et al.;IBM J. Res. Develop. vol. 37 No.2; Mar. 1993; pp. 117-123. |
"Selective Electroless Metal Deposition for Integrated Circuit Fabrication;" Chiu H. Ting et al.; J. Electrochem. Soc. vol. 136, No.2; Feb. 1989; pp.456-462. |
"Selective Electroless Metal Deposition for Via Hole Filling in VLSI Multilevel Interconnection Structures;" Chiu H. Ting et al.; J. Electrochem. Soc., vol. 136, No. 2; Feb. 1989; pp. 462-466. |
"Pd/Si plasma immersion ion implantation for selective electroless copper plating on SiO2;" M.-H. Kiang et al.; Appl. Phys. Lett. 60 (22); Jun. 1, 1992; pp. 2767-2769. |
"Selective electroless Ni deposition on a TiW underlayer for integrated circuit fabrication;" V.M. Dubin et al.; Thin Solid Films, 226(1993) ; pp. 87-93. |
"Copper Corrosion With and Without Inhibitors;" V. Brusic et al.; J. Electrochem. Soc., vol. 138, No. 8; Aug. 1991; pp. 2253-2259. |
"nm wide copper lines made by selective electroless deposition;" Yosi Shacham-Diamand; J. Micromech. Microeng. 1 (1991); pp. 66-72. (no month). |
"Passivation of Copper by Silicide Formation In Dilute Silane;" S. Hymes et al.; Conf. Proc. ULSI-VII, Materials Research Society; 1992; pp. 425-431. (no month). |
"A Half-Micron Pitch Cu Interconnection Technology;" Kazuyoshi Ueno et al.; 1995 Symposium on VLSI Technology Digest of Technical Papers; 1995; pp. 27-28. (no month). |