Claims
- 1. A method of manufacturing a heat dissipating, electrically insulated component, comprising the following steps:
- (a) forming a heat transfer substrate of a sintered alloy selected from the group consisting of Cu-W alloy and Cu-Mo alloy,
- (b) forming a metal barrier layer on a surface of said substrate, said barrier layer consisting of a metal selected from the group consisting of W and Mo and combinations thereof, and
- (c) forming an electrically insulating ceramic layer on said barrier layer, said barrier layer preventing a copper diffusion from said substrate of one of Cu-W and Cu-Mo into said ceramic layer.
- 2. The method of claim 1, further comprising the step of forming an intermediate layer between said barrier layer and said ceramic layer for increasing an adhesive bonding between said barrier layer and said ceramic layer.
- 3. The method of claim 2, wherein said step of forming said intermediate layer is performed by using a carbide or nitride of metals selected from the group consisting of groups IV, V, and VI of the periodic table of elements.
- 4. The method of claim 2, wherein said step of forming said intermediate layer is performed by applying any one of a CVD method, a plasma CVD method, and an ion plating method.
- 5. The method of claim 4, wherein said applying is contained until said intermediate layer has a thickness within the range of 1 to 5 .mu.m.
- 6. The method of claim 1, wherein said step of forming said barrier layer is performed by applying a thermal or plasma CVD method.
- 7. The method of claim 6, wherein said step of applying is continued until said barrier layer has a thickness within the range of 1 to 10 .mu.m.
- 8. The method of claim 1, wherein said step of forming said ceramic layer is performed by applying any one of a CVD method, a plasma CVD method, and an ion plating method.
- 9. The method of claim 8, wherein said applying is performed until said ceramic layer has a thickness within the range of 1 to 20 .mu.m.
- 10. The method of claim 1, wherein said step of forming said ceramic layer is performed by using a ceramic selected from the group consisting of Al.sub.2 O.sub.3, SiO.sub.2, and Si.sub.3 N.sub.4.
- 11. The method of claim 1, wherein said heat transfer substrate is formed of a sintered Cu-W-alloy and said barrier layer is formed of W.
- 12. The method of claim 1, wherein said heat transfer substrate is formed of a sintered Cu-Mo-alloy and said barrier layer is formed of Mo.
- 13. The method of claim 2, wherein said intermediate layer is formed of a member selected from the group consisting of TiC, Ti(C,N) and TiN.
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a divisional of U.S. patent application Ser. No. 07/616,893 filed Nov. 21, 1990 now abandoned.
US Referenced Citations (11)
Foreign Referenced Citations (2)
Number |
Date |
Country |
9108322 |
Jun 1991 |
WOX |
2163456 |
Feb 1986 |
GBX |
Non-Patent Literature Citations (2)
Entry |
M. Fukutomi et al "Silicon Nitride Coatings on Molybdenum by RF Reactive Ion Plating". J. Electrochem. Soc. vol. 124, No. 9 Sep. 1977, pp. 1420-1424. |
M. Kobayashi et al "TiN and TiC Coating on Cemented Carbides by Ion Plating" Thin Solid Films 54, 1978, pp. 67-74. |
Divisions (1)
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Number |
Date |
Country |
Parent |
616893 |
Nov 1990 |
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