Claims
- 1. A method of forming a layer on a substrate comprising the steps of:
forming a layer of germanosilicate glass on a substrate; and thermally treating the layer of germanosilicate glass in steam to remove germanium from the germanosilicate glass and thereby raise the reflow temperature of the germanosilicate glass so treated.
- 2. A method according to claim 1:
wherein the forming step comprises the step of forming a nonplanar layer of germanosilicate glass on a substrate; and wherein the thermally treating step comprises the step of thermally treating the nonplanar layer of germanosilicate glass in steam to planarize the layer of germanosilicate glass and to remove germanium from the planarized germanosilicate glass.
- 3. A method according to claim 1 wherein the thermally treating step is preceded by the step of thermally pretreating the layer of germanosilicate glass in at least one of a noble gas and nitrogen gas to reflow the layer of germanosilicate glass.
- 4. A method according to claim 3:
wherein the forming step comprises the step of forming a nonplanar layer of germanosilicate glass on a substrate; wherein the thermally pretreating step comprises the step of thermally pretreating the nonplanar layer of germanosilicate glass in at least one of a noble gas and nitrogen gas to reflow the nonplanar layer of germanosilicate glass and partially planarize the nonplanar layer of germanosilicate glass; and wherein the thermally treating step comprises the step of thermally treating the partially planarized layer of germanosilicate glass in steam to remove germanium from the partially planarized germanosilicate glass and to fully planarize the partially planarized germanosilicate glass.
- 5. A method according to claim 3:
wherein the forming step comprises the step of forming a nonplanar layer of germanosilicate glass on a substrate; wherein the thermally pretreating step comprises the step of thermally pretreating the nonplanar layer of germanosilicate glass in at least one of a noble gas and nitrogen gas to reflow the nonplanar layer of germanosilicate glass and fully planarize the nonplanar layer of germanosilicate glass; and wherein the thermally treating step comprises the step of thermally treating the fully planarized layer of germanosilicate glass in steam to remove germanium from the fully planarized germanosilicate glass.
- 6. A method according to claim 1 wherein the forming step comprises the step of forming a layer of germanosilicate glass on a substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) at about 200° C.
- 7. A method according to claim 1 wherein the forming step comprises the step of forming a layer of germanosilicate glass having mole percentage of germanium dioxide of between about 60% and about 85%.
- 8. A method according to claim 1 wherein the forming step comprises the step of forming a layer of germanosilicate glass having mole percentage of germanium dioxide of between about 77% and about 83%.
- 9. A method according to claim 1:
wherein the forming step comprises the step of forming a layer of doped germanosilicate glass on a substrate, the doped germanosilicate glass having lower reflow temperature than undoped germanosilicate glass; and wherein the thermally treating step comprises the step of thermally treating the layer of doped germanosilicate glass in steam to remove at least one of germanium and dopant from the germanosilicate glass and thereby raise the reflow temperature of the doped germanosilicate glass so treated.
- 10. A method according to claim 9 wherein the forming step comprises the step of forming a layer of boron doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 40% and about 85% and mole percentage of boron of between about 1% and about 4% relative to the total.
- 11. A method according to claim 9 wherein the forming step comprises the step of forming a layer of boron doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 77% and about 83% and mole percentage of boron of about 3% relative to the total.
- 12. A method according to claim 9 wherein the forming step comprises the step of forming a layer of phosphorous doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 60% and about 85% and mole percentage of phosphorous of between about 14% and about 44% relative to the total.
- 13. A method according to claim 9 wherein the forming step comprises the step of forming a layer of phosphorous doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 55% and about 85% and mole percentage of phosphorous of about 14% relative to the total.
- 14. A method according to claim 9 wherein the forming step comprises the step of forming a layer of boron and phosphorus doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 40% and about 85%, mole percentage of boron of between about 1% and about 4% relative to the total, and mole percentage of phosphorus of between about 5% and about 23% relative to the total.
- 15. A method according to claim 9 wherein the forming step comprises the step of forming a layer of boron and phosphorus doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 82% and about 85%, mole percentage of boron of between about 1% and about 3% relative to the total, and mole percentage of phosphorus of between about 11% and about 14% relative to the total.
- 16. A method of forming a plurality of germanosilicate glass layers on a substrate, comprising the steps of:
forming a layer of germanosilicate glass on a substrate; thermally treating the layer of germanosilicate glass in steam to remove germanium from the germanosilicate glass and thereby raise the reflow temperature of the germanosilicate glass so treated; and repeating the steps of forming and thermally treating to thereby create a hierarchy of thermally treated germanosilicate glass layers on the substrate, wherein each thermally treated germanosilicate glass layer has higher reflow temperature than the corresponding layer of germanosilicate glass as formed.
- 17. A method according to claim 16 wherein each of the repeated forming and thermally treating steps are performed under same conditions.
- 18. A method according to claim 16 wherein at least two of the repeated thermally treating steps are performed under differing thermal conditions.
- 19. A method according to claim 16:
wherein the thermally treating step is preceded by the step of thermally pretreating the layer of germanosilicate glass in at least one of a noble gas and nitrogen gas to reflow the layer of germanosilicate glass; and wherein the repeating step comprises the steps of repeating the steps of forming, thermally pretreating and thermally treating to thereby create a plurality of thermally treated reflowed germanosilicate glass layers on the substrate, wherein each thermally treated reflowed germanosilicate glass layer has higher reflow temperature than the corresponding layer of germanosilicate glass as formed.
- 20. A method according to claim 19:
wherein the forming step comprises the step of forming a nonplanar layer of germanosilicate glass on a substrate; wherein the thermally pretreating step comprises the step of thermally pretreating the nonplanar layer of germanosilicate glass in at least one of a noble gas and nitrogen gas to reflow the nonplanar layer of germanosilicate glass and partially planarize the nonplanar layer of germanosilicate glass; and wherein the thermally treating step comprises the step of thermally treating the partially planarized layer of germanosilicate glass in steam to remove germanium from the partially planarized germanosilicate glass and to fully planarize the partially planarized germanosilicate glass.
- 21. A method according to claim 19:
wherein the forming step comprises the step of forming a nonplanar layer of germanosilicate glass on a substrate; wherein the thermally pretreating step comprises the step of thermally pretreating the nonplanar layer of germanosilicate glass in at least one of a noble gas and nitrogen gas to reflow the nonplanar layer of germanosilicate glass and fully planarize the nonplanar layer of germanosilicate glass; and wherein the thermally treating step comprises the step of thermally treating the fully planarized layer of germanosilicate glass in steam to remove germanium from the fully planarized germanosilicate glass.
- 22. A method according to claim 16 wherein the forming step comprises the step of forming a layer of germanosilicate glass on a substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) at about 200° C.
- 23. A method according to claim 16 wherein the forming step comprises the step of forming a layer of germanosilicate glass having mole percentage of germanium dioxide of between about 60% and about 85%.
- 24. A method according to claim 16 wherein the forming step comprises the step of forming a layer of germanosilicate glass having mole percentage of germanium dioxide of between about 77% and about 83%.
- 25. A method according to claim 16:
wherein the forming step comprises the step of forming a layer of doped germanosilicate glass on a substrate, the doped germanosilicate glass having lower reflow temperature than undoped germanosilicate glass; and wherein the thermally treating step comprises the step of thermally treating the layer of doped germanosilicate glass in steam to remove at least one of germanium and dopant from the germanosilicate glass and thereby raise the reflow temperature of the doped germanosilicate glass so treated.
- 26. A method according to claim 25 wherein the forming step comprises the step of forming a layer of boron doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 40% and about 85% and mole percentage of boron of between about 1% and about 4% relative to the total.
- 27. A method according to claim 25 wherein the forming step comprises the step of forming a layer of boron doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 77% and about 83% and mole percentage of boron of about 3% relative to the total.
- 28. A method according to claim 25 wherein the forming step comprises the step of forming a layer of phosphorous doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 60% and about 85% and mole percentage of phosphorous of about 14% and about 44% relative to the total.
- 29. A method according to claim 25 wherein the forming step comprises the step of forming a layer of phosphorous doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 60% and about 85% and mole percentage of phosphorous of about 14% relative to the total.
- 30. A method according to claim 25 wherein the forming step comprises the step of forming a layer of boron and phosphorus doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 40% and about 85%, mole percentage of boron of between about 1% and about 4% relative to the total, and mole percentage of phosphorus of between about 5% and about 23% relative to the total.
- 31. A method according to claim 25 wherein the forming step comprises the step of forming a layer of boron and phosphorus doped germanosilicate glass having mole percentage of germanium dioxide relative to silicon dioxide of between about 82% and about 85%, mole percentage of boron of between about 1% and about 3% relative to the total, and mole percentage of phosphorus of between about 11% and about 14% relative to the total.
- 32. A method according to claim 16:
wherein the thermally treating step is followed by the step of forming a conductive layer on the thermally treated layer of germanosilicate glass; and wherein the repeating step comprises the step of repeating the steps of forming a layer of germanosilicate glass, thermally treating and forming a conductive layer to thereby create a hierarchy of thermally treated germanosilicate glass layers on the substrate, that are separated by conductive layers, wherein each thermally treated germanosilicate glass layer has higher reflow temperature than the corresponding layer of germanosilicate glass as formed.
- 33. A method of forming a plurality layers on a substrate, comprising the steps of:
forming a layer of glass on a substrate, the glass including at least two compounds in solid solution, one of which is volatilized by steam; thermally treating the layer of glass in steam to remove at least some of the compound which is volatilized by steam from the glass and thereby raise the reflow temperature of the glass so treated; and repeating the steps of forming and thermally treating to thereby create a hierarchy of thermally treated glass layers on the substrate, wherein each thermally treated glass layer has higher reflow temperature than the corresponding layer of glass as formed.
- 34. A method according to claim 33 wherein each of the repeated forming and thermally treating steps are performed under same conditions.
- 35. A method according to claim 33 wherein at least two of the repeated thermally treating steps are performed under differing thermal conditions.
- 36. A method according to claim 33:
wherein the thermally treating step is followed by the step of forming a conductive layer on the thermally treated layer of glass; and wherein the repeating step comprises the step of repeating the steps of forming a layer of glass, thermally treating and forming a conductive layer to thereby create a plurality of thermally treated glass layers on the substrate, that are separated by conductive layers, wherein each thermally treated glass layer has higher reflow temperature than the corresponding layer of glass as formed
- 37. A method according to claim 33 wherein a first one of the thermally treated glass layers has higher dielectric constant than a second one of the thermally treated glass layers.
- 38. A method according to claim 37 wherein the first one of the thermally treated glass layers comprises at least one of germanotitanate and germanostannate glass and wherein the second one of the thermally treated glass layers comprises germanosilicate glass.
- 39. A method of forming a layer on a substrate comprising the steps of:
forming a layer of germanium-containing glass on a substrate; and thermally treating the layer of germanium-containing glass in steam to remove germanium from the germanium-containing glass and thereby raise the reflow temperature of the germanium-containing glass so treated.
- 40. A method according to claim 39:
wherein the forming step comprises the step of forming a nonplanar layer of germanium-containing glass on a substrate; and wherein the thermally treating step comprises the step of thermally treating the nonplanar layer of germanium-containing glass in steam to planarize the layer of germanium-containing glass and to remove germanium from the planarized germanium-containing glass.
- 41. A method according to claim 39 wherein the thermally treating step is preceded by the step of thermally pretreating the layer of germanium-containing glass in at least one of a noble gas and nitrogen gas to reflow the layer of germanium-containing glass.
- 42. A method according to claim 41:
wherein the forming step comprises the step of forming a nonplanar layer of germanium-containing glass on a substrate; wherein the thermally pretreating step comprises the step of thermally pretreating the nonplanar layer of germanium-containing glass in at least one of a noble gas and nitrogen gas to reflow the nonplanar layer of germanium-containing glass and partially planarize the nonplanar layer of germanium-containing glass; and wherein the thermally treating step comprises the step of thermally treating the partially planarized layer of germanium-containing glass in steam to remove germanium from the partially planarized germanium-containing glass and to fully planarize the partially planarized germanium-containing glass.
- 43. A method according to claim 41:
wherein the forming step comprises the step of forming a nonplanar layer of germanium-containing glass on a substrate; wherein the thermally pretreating step comprises the step of thermally pretreating the nonplanar layer of germanium-containing glass in at least one of a noble gas and nitrogen gas to reflow the nonplanar layer of germanium-containing glass and fully planarize the nonplanar layer of germanium-containing glass; and wherein the thermally treating step comprises the step of thermally treating the fully planarized layer of germanium-containing glass in steam to remove germanium from the fully planarized germanium-containing glass.
- 44. A method according to claim 39 wherein the germanium-containing glass comprises at least one of germnanotitanate glass and germanostannate glass.
- 45. A method according to claim 39 wherein the forming step comprises the step of lining a trench in the substrate with a layer of germanium-containing glass.
- 46. A method according to claim 39 wherein the thermally treating step is followed by the step of forming a contact on the layer of thermally treated germanium-containing glass, opposite the substrate, to thereby form a capacitor.
- 47. A method according to claim 44 wherein the thermally treating step is followed by the step of forming a contact on the layer of thermally treated germanium-containing glass, opposite the substrate, to thereby form a capacitor.
- 48. A method according to claim 45 wherein the thermally treating step is followed by the step of forming a contact on the layer of thermally treated germanium-containing glass, opposite the substrate, to thereby form a capacitor.
- 49. A microelectronic structure comprising:
a microelectronic substrate; and a plurality of layers of germanosilicate glass on the microelectronic substrate, the layers of germanosilicate glass comprising same mole percentage germanium dioxide.
- 50. A microelectronic structure according to claim 49 further comprising:
a conductive layer between adjacent layers of germanosilicate glass.
- 51. A microelectronic structure according to claim 49 wherein the microelectronic substrate includes a trench therein, the microelectronic structure further comprising a layer of germanosilicate glass in the trench.
- 52. A microelectronic structure according to claim 49 wherein the layer of germanosilicate glass in the trench comprises same mole percentage germanium dioxide as the plurality of layers of germanosilicate glass on the microelectronic substrate.
- 53. A microelectronic structure according to claim 49 wherein the microelectronic substrate includes a trench therein, the microelectronic structure further comprising a layer of germanium-containing glass in the trench.
- 54. A microelectronic structure according to claim 53 wherein the germanium-containing glass comprises at least one of germanotitanate glass and germanostannate glass.
- 55. A microelectronic structure comprising:
a microelectronic substrate; a first layer of germanosilicate glass on the microelectronic substrate; a second layer of germanosilicate glass on the first layer of germanosilicate glass, opposite the microelectronic substrate, wherein the second layer of germanosilicate glass comprises higher mole percentage germanium dioxide than the first layer of germanosilicate glass.
- 56. A microelectronic structure according to claim 55 further comprising:
a conductive layer between the first and second layers of germanosilicate glass.
- 57. A microelectronic structure according to claim 55 wherein the microelectronic substrate includes a trench therein, the microelectronic structure further comprising a layer of germanosilicate glass in the trench.
- 58. A microelectronic structure according to claim 57 wherein the layer of germanosilicate glass in the trench comprises same mole percentage germanium dioxide as the first layer of germanosilicate glass.
- 59. A microelectronic structure according to claim 55 wherein the microelectronic substrate includes a trench therein, the microelectronic structure further comprising a layer of germanium-containing glass in the trench.
- 60. A microelectronic structure according to claim 59 wherein the germanium-containing glass comprises at least one of germanotitanate glass and germanostannate glass.
- 61. An integrated circuit comprising:
an integrated circuit substrate including a plurality of microelectronic devices therein; a plurality of spaced apart conductive layers on the integrated circuit substrate that electrically connect the plurality of microelectronic devices to one another, the plurality of spaced apart conductive layers including an outermost conductive layer and at least one underlying conductive layer beneath the outermost conductive layer; and a capping layer on the outermost conductive layer, opposite the at least one underlying conductive layer, the capping layer comprising germanosilicate glass.
- 62. An integrated circuit according to claim 61 further comprising:
a plurality of layers of germanosilicate glass on the integrated circuit substrate, a respective one of which is between adjacent conductive layers, the layers of germanosilicate glass comprising same mole percentage germanium dioxide.
- 63. An integrated circuit according to claim 62 wherein the integrated circuit substrate includes a trench therein, the integrated circuit further comprising a layer of germanosilicate glass in the trench.
- 64. An integrated circuit according to claim 63 wherein the layer of germanosilicate glass in the trench comprises same mole percentage germanium dioxide as the plurality of layers of germanosilicate glass on the microelectronic substrate.
- 65. An integrated circuit according to claim 61 wherein the microelectronic substrate includes a trench therein, the microelectronic structure further comprising a layer of germanium-containing glass in the trench.
- 66. An integrated circuit according to claim 65 wherein the germanium-containing glass comprises at least one of germanotitanate glass and germanostannate glass.
FEDERALLY SPONSORED RESEARCH
[0001] This invention was made with Government support under National Science Foundation Grant No. 9222487. The Government has certain rights to this invention.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09201447 |
Nov 1998 |
US |
Child |
09878440 |
Jun 2001 |
US |