This invention relates generally to electronics and more particularly to a method and system for improved wire bonding.
Miniaturization of integrated circuit (IC) chips is a challenged faced by most chip manufacturers. This trend towards miniaturization in turn pushes the limits of numerous high density packaging processes. An example of such a process is the wire bond process.
The wire bond process, or “wire bonding,” refers to a process of connecting electronic components and conducting tracks using a piece of wire. For example, a die may be coupled to a substrate by forming a bonded ball at each contact of the die and then looping the wire from the bonded ball to a corresponding external contact of the substrate. As the size of the contacts of the die and the substrate is reduced due to miniaturization, the size of the bonded ball may also need to be reduced. Further, wire bonding process may result in peeling and other types of pad damage because of the relatively delicate structure of miniaturized components.
According to one embodiment of the invention, a method for coupling electrical contacts is provided. The method includes providing an electronic component having a contact that is to be coupled to another contact. The method also includes forming, over the contact, a bonded ball having a downwardly sloping shoulder that extends from a point and ends at an edge of the shoulder. The downwardly sloping shoulder has an angle between 105-130 degrees from a first imaginary vertical line that intersects the point. The downwardly sloping shoulder does not have a structure that makes contact with the electronic component and also extends in an outward direction from a second imaginary vertical line intersecting the edge of the shoulder. The method also includes coupling the bonded ball to the another contact using a wire.
Some embodiments of the invention provide numerous technical advantages. Other embodiment may realize some, none, or all of these advantages. For example, according to one embodiment, the probability of pad damage associated with wire bonding is reduced by forming a bonded ball that has a relatively flat shoulder and no flange. In another embodiment, the footprint of the bonded ball is reduced by eliminating the flange that may extend from the shoulder of the bonded ball.
Other advantages may be readily ascertainable by those skilled in the art.
Reference is now made to the following description taken in conjunction with the accompanying drawings, wherein like reference numbers represent like parts, in which:
Embodiments of the invention are best understood by referring to
Capillary 34 and arm 38 are coupled to a control system (not explicitly shown in
An example of a wire bonding process is described as follows. A strand of wire is provided in capillary 34. A tip of the strand of wire is accessible through the tip of capillary 34. An electronic flame off (EFO) firing is used to form a free air ball (FAB) 32 at the tip of the wire. Capillary 34 is lowered to position FAB 32 on a particular contact 24. Then an initial ball deformation is made by applying a suitable level of bond force to form a bonded ball, such as bonded ball 30. After bonded ball 30 is formed on contact 24, capillary 34 is raised and the looping of the wire takes place as capillary 34 travels from the position of bonded ball 30 to a particular contact 18 to which the contact 24 is to be coupled. Once capillary 34 reaches the particular contact 18, a stitch is formed at the contact 18 by deforming the wire against the contact 18 to make a wedge-shaped impression. Then this wire bonding process is repeated for other contacts 24 and 18.
With the trend towards miniaturization of IC chips, the size of the contacts 18 of die 24 and substrate 14 is reduced. Thus, the size of a bonded ball may also need to be reduced. Further, the probability of damage to the pad, which is an area surrounding contact 18, may increase during the wire bonding process because smaller components tend to be more delicate. One example of damage to the pad is peeling, which refers to the removal of a layer of the pad and/or contact 18 as capillary 34 is lifted to form another wire connection.
According to one embodiment of the invention, a method and system for an improved wire bonding process is provided by forming bonded ball 30 that has a downwardly-sloping shoulder at an angle of approximately 105 to 130 degrees from an imaginary vertical line and a footprint that does not extend outside of an aperture having the inner chamfer diameter of a capillary. This is advantageous in some embodiments because the probability of damage to the pad surrounding a contact is reduced. In one embodiment, this is advantageous also because the footprint of the bonded ball is reduced, which facilitates the miniaturization of electronic components. Additional details of the example embodiments of the invention are described below in greater detail in conjunction with
As shown in
Referring back to
Referring back to
In more specific embodiments, shoulder angle 58A is in a range of 105 to 115 degrees, or between 125 to 130 degrees. Forming a bonded ball using any of the above-described ranges of shoulder angle 58A, in conjunction with the elimination of a flange that extends outwardly from imaginary vertical line 35, results in a formation of a “short” shoulder 58 that reduces the probability of damage to pad area surrounding a contact, such as contact 24 shown in
In one embodiment, inner chamfer angle 84 is in a range of 100 to 150 degrees, with particularly suitable ranges being between 100 to 110 degrees and 130 to 150 degrees. The above-identified ranges are advantageous in some embodiments because a bonded ball resulting from using a capillary having such inner chamfer angles will have a “short” shoulder that reduces the possibility of pad damage. In one embodiment, chamfer diameter 70D may be 42 micrometers or less, and hole diameter 78D may be 32 micrometers or less.
Referring to
In some embodiments, one skilled in the art may form a bonded ball having a shoulder at an angle between 105-130 degrees and no flange, such as bonded ball 30 shown in
Method 100 starts at step 104. At step 108, a capillary having a chamfer angle of approximately 100 to 150 degrees is provided. An example of the capillary of step 108 is capillary 34; however, any suitable device may be used. At step 110, wire is provided in capillary 34. The wire may be formed from gold, aluminum, copper, or any other suitable material. In one embodiment, the diameter of the wire is less than 25 micrometers. However, other wire diameters may be used depending on the particular requirements for the wire bonding process and hole diameter 78D of capillary 34.
At step 114, a free air ball is formed at the tip of the wire provided at step 110. Example diameters of the free air ball include, but are not limited to, 85-115 percent, 90-110 percent, and 92-108 percent of chamfer diameter 70D (shown in
At step 118, bond force is applied on free air ball for a predetermined period of time. In one embodiment, a bond force of 20 gram-force is applied for 10 milliseconds or less; however, any suitable level of bond force may be applied for any suitable length of time, depending on the design specifications of bonded ball 30. In conjunction with the applied bond force, ultrasonic vibration may also be provided to enhance the formation of bonded ball 30. In one embodiment, bond force and/or ultrasonic vibration is applied only through chamfer face 80. At step 120, capillary is lifted for the looping of the wire. Method 100 stops at step 124.
Although some embodiments of the present invention have been described in detail, it should be understood that various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the invention as defined by the appended claims.