Claims
- 1. A method for producing a metal via surrounded by a material of low dielectric constant, the via and the low dielectric constant material embedded in a material having a high dielectric constant comprising the steps of:a) forming at least one via having a predetermined diameter in a green sheet material having a low dielectric constant; b) filling said via with a selected metal paste and drying said sheet; c) selecting a second green sheet of a material having a high dielectric constant and forming at least one aperture therein, said aperture having a diameter equal to the desired diameter of said via surrounded by said material having a low dielectric constant; . d) placing said sheet of low dielectric constant material above said material having a high dielectric constant and aligning a center line of said via with a center line of said aperture; and punching through said sheet of low dielectric constant material with a punch equal to or less than the diameter of said aperture, said punch having a central axis aligned with a central axis of said via and said aperture to create a plug of low dielectric constant material containing said via inserted into said aperture in said high dielectric constant material.
- 2. A method according to claim 1 including producing several sheets of high dielectric constant material containing inserted vias surrounded by low dielectric constant material.
- 3. A method according to claim 2 including stacking said sheets of high dielectric constant material containing vias surrounded by low dielectric constant material to produce a multilayer structure with vias disposed to produce a continuous path from a top layer to a bottom layer of said structure, wherein each layer is formed from a separate sheet of said high dielectric constant material containing vias surrounded by low dielectric constant material.
- 4. A method according to claim 3 wherein said layers are laminated together.
- 5. A method according to claim 4 wherein said laminated structure is sintered.
- 6. A method according to claim 3 including covering said stacked layers with at least one layer of a material having a high dielectric constant.
- 7. A method according to claim 3 including using said stacked layers to form a composite wherein said stacked layers are inside a composite of layers of a material having a high dielectric constant to form a further multilayer structure.
- 8. A method according to claim 3 including using said stacked layers on top of a material having a high dielectric constant to form a further multilayer structure.
Parent Case Info
This application is a division of U.S. patent application Ser. No. 09/007,624, filed on Jan. 15, 1998, now U.S. pat. No. 6,072,690, Jun. 6, 2000.
US Referenced Citations (11)
Foreign Referenced Citations (1)
Number |
Date |
Country |
4-25098 |
Jan 1992 |
JP |
Non-Patent Literature Citations (1)
Entry |
“Low Capacitive Via Path Through High Dielectric Constant Material,” IBM Technical Disclosure Bulletin, vol. 22, issue 12, pp. 5330-5331 (Abstract only), May 1980. |