Number | Name | Date | Kind |
---|---|---|---|
3960619 | Seiter | Jun 1976 | A |
4262631 | Kubacki | Apr 1981 | A |
4532150 | Endo et al. | Jul 1985 | A |
4634601 | Hamakawa et al. | Jan 1987 | A |
4759947 | Ishihara et al. | Jul 1988 | A |
4822697 | Haluska et al. | Apr 1989 | A |
4885220 | Kuhman et al. | Dec 1989 | A |
4894352 | Lane et al. | Jan 1990 | A |
5082695 | Yamada et al. | Jan 1992 | A |
5103285 | Furumura et al. | Apr 1992 | A |
5238866 | Bolz et al. | Aug 1993 | A |
5300951 | Yamazaki | Apr 1994 | A |
5465680 | Loboda | Nov 1995 | A |
5591566 | Ogawa | Jan 1997 | A |
5597566 | Huls | Jan 1997 | A |
5711987 | Bearinger et al. | Jan 1998 | A |
5818071 | Loboda et al. | Oct 1998 | A |
5926740 | Forbes et al. | Jul 1999 | A |
5953627 | Carter et al. | Sep 1999 | A |
5989998 | Sugahara et al. | Nov 1999 | A |
6051321 | Lee et al. | Apr 2000 | A |
6054379 | Yau et al. | Apr 2000 | A |
6060132 | Lee | May 2000 | A |
6068884 | Rose et al. | May 2000 | A |
6140226 | Grill et al. | Oct 2000 | A |
6147009 | Grill et al. | Nov 2000 | A |
6159871 | Loboda et al. | Dec 2000 | A |
6287990 | Cheung et al. | Sep 2001 | B1 |
6312793 | Grill et al. | Nov 2001 | B1 |
6316167 | Angelopoulos et al. | Nov 2001 | B1 |
6340628 | Van Cleemput et al. | Jan 2002 | B1 |
6410437 | Flanner et al. | Jun 2002 | B1 |
6417092 | Jain | Jul 2002 | B1 |
6436824 | Chooi et al. | Aug 2002 | B1 |
6444568 | Sundararajan et al. | Sep 2002 | B1 |
Number | Date | Country |
---|---|---|
0 771 886 | Jul 1997 | EP |
0 926 715 | Jun 1999 | EP |
0 926 724 | Jun 1999 | EP |
61-257475 | Nov 1986 | JP |
10-223758 | Aug 1998 | JP |
WO 0019498 | Apr 2000 | WO |
WO 0019508 | Apr 2000 | WO |
Entry |
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Gaillard, et al., “Method of Decreasing the K Value in SIOC Layer Deposited By Chemical Vapor Deposition, ” filed Oct. 5, 2000, USSN 09/679,843. |
Nemani, et al., “Dual Frequency Plasma Enhanced Chemical Vapor Deposition of Silicon Carbide Layers, ” filed Sep. 12, 2000, USSN 09/660,268. |
Huang, et al., “Method and Apparatus for Treating Low k Dielectric Layers to Reduce Diffusion,” filed Jul. 10, 2001, USSN 09/902,518. |
Lang, et al., “A Method of Depositing a Low K Dielectric Barrier Film for Copper Damascene Application,” filed Mar. 4, 2002, USSN 10/092,203. |
U.S. application Ser. No. 09/627,667, “Method of Depositing Dielectric Films”, Nemani, et al. |