This disclosure relates generally to integrated circuit packages and, more particularly, to methods and apparatus to embed host dies in a substrate.
There is a constant drive to manufacture integrated circuit (IC) packages with smaller form factors, higher performance, lower power consumption, and/or higher density integrity. Efforts to meet increasing demands for these objectives have included incorporating multiple semiconductor dies into a single package. In some such packages, the separate dies are interconnected through traces, vias, and/or other electrical interconnects within a substrate to which the separate dies are attached. Further, in some instances, to increase the density of signal paths between the separate dies, the electrical interconnects for such signal paths are implemented within a block of semiconductor material, referred to as a host die, that is embedded in the substrate. Typically, host dies are manufactured in a separate fabrication process prior to being embedded in a surrounding substrate and independent of the fabrication processes involved in manufacturing each of the separate semiconductor dies interconnected by the host dies and/or the associated substrate. Host dies within a substrate act as a host to fan out very fine line spacing metal interconnect structures to enable the inclusion of multiple dies according to 2D and 3D integration techniques.
The figures are not necessarily to scale. Instead, the thickness of the layers or regions may be enlarged in the drawings. Although the figures show layers and regions with clean lines and boundaries, some or all of these lines and/or boundaries may be idealized. In reality, the boundaries and/or lines may be unobservable, blended, and/or irregular. In general, the same reference numbers will be used throughout the drawing(s) and accompanying written description to refer to the same or like parts. As used herein, unless otherwise stated, the term “above” describes the relationship of two parts relative to Earth. A first part is above a second part, if the second part has at least one part between Earth and the first part. Likewise, as used herein, a first part is “below” a second part when the first part is closer to the Earth than the second part. As noted above, a first part can be above or below a second part with one or more of: other parts therebetween, without other parts therebetween, with the first and second parts touching, or without the first and second parts being in direct contact with one another. Notwithstanding the foregoing, in the case of a semiconductor device, “above” is not with reference to Earth, but instead is with reference to a bulk region of a base semiconductor substrate (e.g., a semiconductor wafer) on which components of an integrated circuit are formed. Specifically, as used herein, a first component of an integrated circuit is “above” a second component when the first component is farther away from the bulk region of the semiconductor substrate than the second component. As used in this patent, stating that any part (e.g., a layer, film, area, region, or plate) is in any way on (e.g., positioned on, located on, disposed on, or formed on, etc.) another part, indicates that the referenced part is either in contact with the other part, or that the referenced part is above the other part with one or more intermediate part(s) located therebetween. As used herein, connection references (e.g., attached, coupled, connected, and joined) may include intermediate members between the elements referenced by the connection reference and/or relative movement between those elements unless otherwise indicated. As such, connection references do not necessarily infer that two elements are directly connected and/or in fixed relation to each other. As used herein, stating that any part is in “contact” with another part is defined to mean that there is no intermediate part between the two parts.
Two dimensional (2D) and three dimensional (3D) integrated circuits (IC) are being actively explored to advance semiconductor packaging technology because of their advantages associated with small form factor, high performance, low power consumption and high density integration. Many of these advantages are achieved, at least in part, through the use of host dies embedded within a substrate that supports other semiconductor dies (e.g., chiplets (also referred to as tiles)) included within a package. As used herein, a host die is a semiconductor die independently fabricated on a semiconductor wafer (e.g., a silicon wafer) and subsequently embedded within a substrate of an IC package in a manner so that the host die enables a separate semiconductor die attached to the substrate of the IC package and to be electrically coupled with at least one of a different semiconductor die in the package or an electrical component external to the package. Typically, the assembly process for such packages includes the bonding of a host die to the substrate to enable the fan out of very fine line spacing structures with bump pitch (BP) scaling from 55 µm down to 30 µm or less. After being bonded to the substrate, the host die is often encased within an organic dielectric through which holes are then drilled to expose metal pads on the host die. Such holes are filled with metal to provide metal vias that enable the electrical interconnection of the metal pads on the host die with other components (e.g., bumps on mating dies or chiplets) through the metal vias as illustrated in
Following the placement of the host die 102 in the cavity of the substrate 100, the cavity is refilled with dielectric material 108 and/or additionally layers of the dielectric material 108 are added over top of the host die 102. Heat associated with the curing of the die adhesive film 112 and/or the curing of the dielectric material 108 after placement of the host die 102 can cause shrinkage in the die adhesive film 112, which can result in the die shifting relative to its initial placement on the substrate.
Once the host die 102 is embedded within the dielectric material 108, holes are laser drilled through the dielectric material 108 down to the pads 104 on the host die 102. These holes serve as the basis for the metal vias 106, which are created by filling the holes with metal, thereby completing the fabrication of the substrate 100. However, in many circumstances, the vias 106 may not be perfectly aligned with the pads 104. Rather, misalignment of the vias 106 is relatively common due to the warpage of the panel that is not accounted for when aligning the placement of the host die 102 and the subsequent shifting of the host die 102 due to shrinkage of the die adhesive film 112, as discussed above. What is more, the shifting of the host die 102 relative to the substrate 100 from an expected (e.g., target) position to an actual position due to these factors cannot be predicted with any great consistency. Indeed, die shift can vary from one panel to the next, can vary from one unit to the next on a single panel (e.g., between two IC packages fabricated on the same panel), and/or can vary within a single unit (e.g., from one host die to the next in a single IC package that includes multiple host dies).
Variations in the alignment or overlay (OL) of the vias 106 to the pads 104 of the host die 102 across an actual panel is represented in
The amount of die shift that is acceptable is a function of the critical dimensions of the pads 104 and vias 106 as well as the spacing or pitch of the pads 104 and vias 106. Typically, the pads 104 have a generally circular shape such that the critical dimension for the pads 104 is the pad diameter 114. The vias 106 are also generally circular in shape but often have a tapered wall such that the diameter of the via 106 at a point farthest away from the host die 102 (commonly referred to as the top diameter 115) is larger than the diameter of the via 106 directly adjacent the host die 102 (commonly referred to as the bottom diameter 116). Inasmuch as the bottom diameter 116 defines the area of alignment and/or overlap with a corresponding pad 104 on the host die 102, the critical dimension of the via 106 is the bottom diameter 116. In some instances, as shown in
The precision of the alignment of the vias 106 relative to the pads 102 (and the corresponding threshold tolerance of die shift and/or misplacement of the die) is diagrammatically demonstrated with reference to
The above factors that lead to some measure of misalignment between the via 106 and a corresponding pad 104 place a constraint on the upper limit of the bottom diameter 114 (or radius 304) of the via 106. In particular, as mentioned above, to ensure a reliable connection, the via 106 should not extend beyond the perimeter of the pad 104. Thus, the position of the via 106 represented in
Reducing the size of vias 106 is not a viable option because vias are already relatively small and making them smaller can create reliability issues even when the via is properly aligned with and fully overlapping a pad 104. Accordingly, examples disclosed herein enable larger bottom diameters 116 of vias 106 relative to the diameters 114 of corresponding pads 104 (that is, the vias 106 may increase in size for improved connection reliability and/or the pads 104 may reduce in size for higher density interconnections) by reducing the amount of die shift. Specifically, in examples disclosed herein, the host die 102 is rigidly attached to the die pad 110 (or other metallic structure) without the use and/or independent of an adhesive (e.g., the die adhesive film 112). That is, in some examples, there is no adhesive at the interface between a host die and a substrate in which the host die is embedded. Rather, in some examples, the host die 102 is attached to the die pad 110 via direct metal-to-metal fusion bonding of two metal surfaces associated with a single metal (e.g., direct copper-to-copper bonding). In some examples, the host die 102 is attached to the die pad 110 via eutectic fusion bonding through the use of a solder material (e.g., tin). Examples disclosed herein may be performed at the wafer level or the panel level. The direct metallic bonds of disclosed examples provide a rigid connection that is not subject to the shrinkage and/or warpage that occurs with a die adhesive film 112. As a result, once the host die 102 is positioned in place, it should not shift during subsequent processing, thereby reducing the amount of overall die shift. With less die shift, the maximum overall misalignment between vias 106 and pads 104 will reduce thereby enabling the size of the vias 102 to be increased relative to the size of the pads 104 for improved reliability.
Further, voids can form in the die adhesive film 112 used to secure host dies 102 in place under traditional approaches during subsequent fabrication processing (e.g., curing operations). Such voids can deleteriously affect the reliability of the host die 102. By eliminating the use of the die adhesive film 112, examples disclosed avoid this potentially source of failure. Furthermore, in some instances, electrical connections needs to be made with the host die 102 through the die adhesive film 112. To make such connections involves an extra processing operation of creating openings (e.g., via laser drilling) in the die adhesive film 112 to enable access to conductive contacts on the host die 102. By contrast, examples disclosed herein eliminate this extra processing operation thereby simplifying the overall fabrication process.
Additionally, in some examples, rather than transferring a host die (e.g., using a pick and place tool) directly to a panel (or wafer) containing an associated package substrate, the host die is transferred to a carrier and held in place by a temporary adhesive film. The host die (along with other host dies on the carrier) is then placed in alignment with a corresponding substrate on a panel (or wafer) by aligning the carrier with the panel. Using an intermediate carrier in this manner can reduce the amount of variation in the error of the placement or positioning of the host dies relative to their final positioning on corresponding substrates. As a result, examples disclosed herein further reduce misalignment between vias and associated host die pads, thereby enabling larger bottom diameters for the vias without a risk of fall off. In some examples, the reduction in misalignment enables the bottom diameter of the vias to be increased sufficiently to be equal to the top diameter of the vias. That is, whereas known implementations of vias are often tapered, examples disclosed herein enable the implementation of taperless vias. In some examples, the bottom diameter of a via may not be exactly the same size as the top via (e.g., there may be some tapering) but the bottom diameter may be substantially the same size as the top diameter. As used herein, the phrase “substantially the same size” means that the bottom diameter is at least 90% of the top diameter.
As shown in the illustrated example, each of the dies 506, 508 is electrically and mechanically coupled to the package substrate 510 through corresponding arrays of bumps 514. The electrical connections between the dies 506, 508 and the package substrate 510 (e.g., the bumps 514) are sometimes referred to as first level interconnects. By contrast, the electrical connections between the IC package 500 and the circuit board 502 (e.g., the balls 504) are sometimes referred to as second level interconnects. In some examples, one or both of the dies 506, 508 may be stacked on top of one or more other dies. In such examples, the dies 506, 508 are coupled to the underlying die through a first set of first level interconnects and the underlying die may be connected to the package substrate 510 via a separate set of first level interconnects associated with the underlying die. Thus, as used herein, first level interconnects refer to interconnects between a die and a package substrate or a die and an underlying die.
As shown in
As used herein, bridge bumps 518 refer to bumps on the dies 506, 508 through which electrical signals pass between different ones of the dies 506, 508 within the package 500. Thus, as shown in the illustrated example, the bridge bumps 518 of the first die 506 are electrically coupled to the bridge bumps 518 of the second die 508 through a second host die 528 embedded in the package substrate 510. Additionally or alternatively, in some examples, different dies 506, 508 are electrically coupled through metal traces associated with the internal interconnects 524 in the substrate 510 independent of an embedded host die 528. The second host die 528 is alternately referred to herein as a bridge die because it provides interconnects that extend or provide a bridge between adjacent dies 506, 508. That is, as used herein, a bridge die is a host die that includes interconnects that extend between different points on the same surface of the die to electrically couple corresponding contacts, bumps, or pads on the surface of the die. As represented in
Unlike host dies (e.g., the host die 102 of
In particular,
As further represented in
Once the surface of the bumps 810 on the bridge die 802 and the surface of the die pad 906 on the substrate 900 have been prepared as outlined above, the bumps 810 of the bridge die 802 are positioned to interface with the die pad 906 of the substrate 900 as represented in
The resulting joint or bond between the bridge die 802 and the die pad 906 from the above process includes copper that extends continuously across a full distance between the back side 812 of the bridge die 802 and a distal side 1002 of the metal layer 904 (e.g., corresponding to a facing surface 1004 of the substrate core 902 on which the die pad 906 is supported). That is, the joint or bond does not include any organic material or other die adhesive film (e.g., the die adhesive film 112). As noted above, an SEM image of an example of such a bond is shown in
The remaining processes represented by
That is, the joint or bond is created independent of and/or without an adhesive (e.g., the die adhesive film 112) at the point of bonding. Unlike the bond described above in connection with
In this example, the TSV dies 2202 are transferred to and positioned on a substrate using a glass carrier 814 in the same manner as discussed above in connection with
Separate contacts 2306 are used in the illustrated example of
As shown in the illustrated example of 24, the bumps 2210 on the TSV die 2202 are bonded to the contacts 2306 of the substrate 2300 with a direct copper-to-copper fusion bond as described above in connection with
The above examples have been described with respect to metallurgical bonds between copper surfaces. However, other metals may be joined together with a direct metal fusion bond without the use of an adhesive. Further, other intermetallic phases between other types of metal (e.g., gold and tin, gold and indium, indium and tin, etc.) may alternatively be used to create metallurgical bonds without the use of an adhesive.
The example method of
At block 2908, the example method includes using the carrier to align the second contacts on the host die with the metal layer of the substrate. In some examples, the interfacing surfaces of the second contacts and the metal layer may be treated to clean such surface of oxide or foreign materials and/or the be planarized to reduce undulations and microroughness prior to the surfaces being mated together. At block 2910, the example method includes applying pressure and heat to cause fusion bonding between the second contact pads on the host die with the metal layer of the substrate. The particular nature of the pressure and heat treatment depends on the nature of the second contacts and the corresponding type of bond to be promoted. In particularly, if the second contacts include an exposed outer surface that is copper to achieve a direct copper-to-copper diffusion bond, the temperature can be limited to approximately 150° C. followed by an annealing process at approximately 200° C. By contrast, if the second contacts include a layer of tin on an underlying copper surface to achieve a copper-tin eutectic bond, the temperature used can be approximately 230° C. and can last for a longer duration than either of the two heat treatments associated with the direct copper-to-copper bonding.
At block 2912, the example method includes laminating and curing a resist film onto the substrate to encapsulate the host die. At block 2914, the example method includes creating holes in the resist film aligned with the first contacts on the host die. Inasmuch as the first contacts of the host die are covered by the resist film prior to the creation of the holes, alignment of the holes with the first contacts depends on the host die being in an expected (target) position. Through the use of the metallurgical fusion bonding between the second contacts of the host die and the metal layer of the substrate, the host die should not shift relative to the substrate once attached thereto. As such, the host die should be closer to the expected position than it would otherwise if the host die was attached to the substrate using an adhesive. Finally, at block 2916, the example method includes depositing metal in the holes to form vias electrically coupled to the first contacts on the host die. Thereafter, the example method of
Additionally, in various examples, the electrical device 3000 may not include one or more of the components illustrated in
The electrical device 3000 may include a processing device 3002 (e.g., one or more processing devices). As used herein, the term “processing device” or “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory. The processing device 3002 may include one or more digital signal processors (DSPs), application-specific integrated circuits (ASICs), central processing units (CPUs), graphics processing units (GPUs), cryptoprocessors (specialized processors that execute cryptographic algorithms within hardware), server processors, or any other suitable processing devices. The electrical device 3000 may include a memory 3004, which may itself include one or more memory devices such as volatile memory (e.g., dynamic random access memory (DRAM)), nonvolatile memory (e.g., read-only memory (ROM)), flash memory, solid state memory, and/or a hard drive. In some examples, the memory 3004 may include memory that shares a die with the processing device 3002. This memory may be used as cache memory and may include embedded dynamic random access memory (eDRAM) or spin transfer torque magnetic random access memory (STT-MRAM).
In some examples, the electrical device 3000 may include a communication chip 3012 (e.g., one or more communication chips). For example, the communication chip 3012 may be configured for managing wireless communications for the transfer of data to and from the electrical device 3000. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a nonsolid medium. The term does not imply that the associated devices do not contain any wires, although in some examples they might not.
The communication chip 3012 may implement any of a number of wireless standards or protocols, including but not limited to Institute for Electrical and Electronic Engineers (IEEE) standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) project along with any amendments, updates, and/or revisions (e.g., advanced LTE project, ultra mobile broadband (UMB) project (also referred to as “3GPP2”), etc.). IEEE 802.16 compatible Broadband Wireless Access (BWA) networks are generally referred to as WiMAX networks, an acronym that stands for Worldwide Interoperability for Microwave Access, which is a certification mark for products that pass conformity and interoperability tests for the IEEE 802.16 standards. The communication chip 3012 may operate in accordance with a Global System for Mobile Communication (GSM), General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network. The communication chip 3012 may operate in accordance with Enhanced Data for GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). The communication chip 3012 may operate in accordance with Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Digital Enhanced Cordless Telecommunications (DECT), Evolution-Data Optimized (EV-DO), and derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The communication chip 3012 may operate in accordance with other wireless protocols in other examples. The electrical device 3000 may include an antenna 3022 to facilitate wireless communications and/or to receive other wireless communications (such as AM or FM radio transmissions).
In some examples, the communication chip 3012 may manage wired communications, such as electrical, optical, or any other suitable communication protocols (e.g., the Ethernet). As noted above, the communication chip 3012 may include multiple communication chips. For instance, a first communication chip 3012 may be dedicated to shorter-range wireless communications such as Wi-Fi or Bluetooth, and a second communication chip 3012 may be dedicated to longer-range wireless communications such as global positioning system (GPS), EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, or others. In some examples, a first communication chip 3012 may be dedicated to wireless communications, and a second communication chip 3012 may be dedicated to wired communications.
The electrical device 3000 may include battery/power circuitry 3014. The battery/power circuitry 3014 may include one or more energy storage devices (e.g., batteries or capacitors) and/or circuitry for coupling components of the electrical device 3000 to an energy source separate from the electrical device 3000 (e.g., AC line power).
The electrical device 3000 may include a display device 3006 (or corresponding interface circuitry, as discussed above). The display device 3006 may include any visual indicators, such as a heads-up display, a computer monitor, a projector, a touchscreen display, a liquid crystal display (LCD), a light-emitting diode display, or a flat panel display.
The electrical device 3000 may include an audio output device 3008 (or corresponding interface circuitry, as discussed above). The audio output device 3008 may include any device that generates an audible indicator, such as speakers, headsets, or earbuds.
The electrical device 3000 may include an audio input device 3024 (or corresponding interface circuitry, as discussed above). The audio input device 3024 may include any device that generates a signal representative of a sound, such as microphones, microphone arrays, or digital instruments (e.g., instruments having a musical instrument digital interface (MIDI) output).
The electrical device 3000 may include a GPS device 3018 (or corresponding interface circuitry, as discussed above). The GPS device 3018 may be in communication with a satellite-based system and may receive a location of the electrical device 3000, as known in the art.
The electrical device 3000 may include any other output device 3010 (or corresponding interface circuitry, as discussed above). Examples of the other output device 3010 may include an audio codec, a video codec, a printer, a wired or wireless transmitter for providing information to other devices, or an additional storage device.
The electrical device 3000 may include any other input device 3020 (or corresponding interface circuitry, as discussed above). Examples of the other input device 3020 may include an accelerometer, a gyroscope, a compass, an image capture device, a keyboard, a cursor control device such as a mouse, a stylus, a touchpad, a bar code reader, a Quick Response (QR) code reader, any sensor, or a radio frequency identification (RFID) reader.
The electrical device 3000 may have any desired form factor, such as a hand-held or mobile electrical device (e.g., a cell phone, a smart phone, a mobile internet device, a music player, a tablet computer, a laptop computer, a netbook computer, an ultrabook computer, a personal digital assistant (PDA), an ultra mobile personal computer, etc.), a desktop electrical device, a server or other networked computing component, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a vehicle control unit, a digital camera, a digital video recorder, or a wearable electrical device. In some examples, the electrical device 3000 may be any other electronic device that processes data.
Unless specifically stated otherwise, descriptors such as “first,” “second,” “third,” etc., are used herein without imputing or otherwise indicating any meaning of priority, physical order, arrangement in a list, and/or ordering in any way, but are merely used as labels and/or arbitrary names to distinguish elements for ease of understanding the disclosed examples. In some examples, the descriptor “first” may be used to refer to an element in the detailed description, while the same element may be referred to in a claim with a different descriptor such as “second” or “third.” In such instances, it should be understood that such descriptors are used merely for identifying those elements distinctly that might, for example, otherwise share a same name. As used herein, “approximately” and “about” refer to dimensions that may not be exact due to manufacturing tolerances and/or other real world imperfections.
“Including” and “comprising” (and all forms and tenses thereof) are used herein to be open ended terms. Thus, whenever a claim employs any form of “include” or “comprise” (e.g., comprises, includes, comprising, including, having, etc.) as a preamble or within a claim recitation of any kind, it is to be understood that additional elements, terms, etc., may be present without falling outside the scope of the corresponding claim or recitation. As used herein, when the phrase “at least” is used as the transition term in, for example, a preamble of a claim, it is open-ended in the same manner as the term “comprising” and “including” are open ended. The term “and/or” when used, for example, in a form such as A, B, and/or C refers to any combination or subset of A, B, C such as (1) A alone, (2) B alone, (3) C alone, (4) A with B, (5) A with C, (6) B with C, or (7) A with B and with C. As used herein in the context of describing structures, components, items, objects and/or things, the phrase “at least one of A and B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing structures, components, items, objects and/or things, the phrase “at least one of A or B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. As used herein in the context of describing the performance or execution of processes, instructions, actions, activities and/or steps, the phrase “at least one of A and B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing the performance or execution of processes, instructions, actions, activities and/or steps, the phrase “at least one of A or B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B.
As used herein, singular references (e.g., “a”, “an”, “first”, “second”, etc.) do not exclude a plurality. The term “a” or “an” object, as used herein, refers to one or more of that object. The terms “a” (or “an”), “one or more”, and “at least one” are used interchangeably herein. Furthermore, although individually listed, a plurality of means, elements or method actions may be implemented by, e.g., the same entity or object. Additionally, although individual features may be included in different examples or claims, these may possibly be combined, and the inclusion in different examples or claims does not imply that a combination of features is not feasible and/or advantageous.
From the foregoing, it will be appreciated that example systems, methods, apparatus, and articles of manufacture have been disclosed that enable heterogeneous die integration, miniaturization of form factor and high performance with improved yield, which are becoming increasingly important for 2D and 3D integration. Examples disclosed herein achieve these objectives by reducing the amount of variation in the alignment (or misalignment) of vias to corresponding pads of an embedded host die. As a result, the critical dimension (e.g., bottom diameter) of the vias can be larger to improve the connection reliability of such vias and/or the pads can be smaller (for higher density interconnects) while maintaining the size of the vias to maintain the connection reliability of such vias. The disclosed systems, methods, apparatus, and articles of manufacture are accordingly directed to one or more improvement(s) in the operation of a machine such as a computer or other electronic and/or mechanical device.
Example 1 includes an apparatus comprising a first die having a first side and a second side opposite the first side, the first side including a first contact to be electrically coupled with a second die, the second side including a second contact, and a substrate including a metal layer and a dielectric material on the metal layer, the first die encapsulated within the dielectric material, the second contact of the host die bonded to the metal layer independent of an adhesive.
Example 2 includes the apparatus of example 1, wherein the first die is a bridge die.
Example 3 includes the apparatus of example 1, wherein the first die is a through silicon via (TSV) die.
Example 4 includes the apparatus of any one of examples 1-3, wherein the second contact is bonded to the metal layer by a metal fusion bond.
Example 5 includes the apparatus of example 4, wherein the second contact and the metal layer include a first metal, and the fusion bond includes a region having an intermetallic phase, the region having the intermetallic phase including the first metal and a second metal different than the first metal.
Example 6 includes the apparatus of example 5, wherein the first metal is copper, and the second metal is tin.
Example 7 includes the apparatus of example 4, wherein the metal fusion bond is a direct metal-to-metal fusion bond of a single metal.
Example 8 includes the apparatus of example 4, wherein the metal fusion bond is a eutectic fusion bond that includes two metals.
Example 9 includes the apparatus of any one of examples 4-8, wherein the metal fusion bond includes metal that extends continuously across a full distance between the second side of the first die and a distal side of the metal layer.
Example 10 includes an apparatus comprising a semiconductor die, a substrate to support the semiconductor die, and a host die embedded in the substrate, the host die having a first side and a second side opposite the first side, the first side including a first contact electrically coupled to the semiconductor die, the second side including a second contact bonded to a metal layer within the substrate such that metal extends continuously across a distance between the second side of the host die and a distal side of the metal layer.
Example 11 includes the apparatus of example 10, where there is no adhesive at an interface between the host die and the substrate.
Example 12 includes the apparatus of any one of examples 10 or 11, wherein the second contact is bonded to the metal layer by a direct metal-to-metal fusion bond.
Example 13 includes the apparatus of example 12, wherein the second contact and the metal layer include copper such that the copper extends continuously across the full distance between the second side of the host die and the distal side of the metal layer.
Example 14 includes the apparatus of any one of examples 10 or 11, wherein the second contact is bonded to the metal layer by a eutectic fusion bond.
Example 15 includes the apparatus of example 14, wherein the second contact and the metal layer include copper, a region at a joint of the second contact and the metal layer including both copper and tin.
Example 16 includes the apparatus of any one of examples 10-15, wherein the host die is a bridge die.
Example 17 includes the apparatus of any one of examples 10-15, wherein the host die is a through silicon via (TSV) die.
Example 18 includes the apparatus of any one of claims 10-17, further including a via in contact with the first contact, the via to electrically couple the first contact and the semiconductor die, the via having a bottom diameter proximate and a top diameter, the bottom diameter substantially the same size as the top diameter.
Example 19 includes a method of manufacturing a substrate with an embedded host die, the method including providing the host die, the host die having a first side and a second side opposite the first side, the first side including a first contact, the second side including a second contact, bonding the second contact to a metal layer of the substrate without an adhesive at a point of the bonding, encapsulating the host die on the metal layer with a dielectric material, and providing vias through the dielectric material, the vias to electrically couple the first contact on the host die to a separate semiconductor die.
Example 20 includes the method of example 19, further including, prior to bonding the second contact to the metal layer transferring the host die to a carrier, and aligning the host die with the substrate based on fiducial marks on the carrier.
Example 21 includes the method of any one of examples 19 or 20, wherein the bonding of the second contact to the metal layer includes applying pressure and heat to promote direct metal-to-metal fusion bonding between the second contact and the metal layer.
Example 22 includes the method of any one of examples 19-21, wherein the fabricating of the host die includes depositing tin on the second contact, and the bonding of the second contact to the metal layer includes applying pressure and heat to promote eutectic fusion bonding between the second contact and the metal layer.
Although certain example systems, methods, apparatus, and articles of manufacture have been disclosed herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers all systems, methods, apparatus, and articles of manufacture fairly falling within the scope of the claims of this patent.
The following claims are hereby incorporated into this Detailed Description by this reference, with each claim standing on its own as a separate embodiment of the present disclosure.