The present invention relates to the field of microelectronic packaging technologies, and in particular, to a packaging structure and a packaging method.
As an integrated electronic technology develops, a requirement on chip performance continuously increases, such as function enhancement, size reduction, and reduction of energy consumption and costs. Therefore, a 3D IC (three-dimensional integrated circuit) technology and a 2.5D IC packaging technology have emerged. A silicon interposer (Silicon Interposer) technology is a technical solution for implementing interconnection between dies and interconnection between a die and a substrate in the three-dimensional integrated circuit technology and the 2.5D IC packaging technology.
2.5D IC packaging is used as an example. In the 2.5D IC packaging in the prior art, at least two dies are integrated into a fan-out unit (Fan out Unit) by using a fan-out wafer level package technology, and the fan-out unit is packaged on a substrate by using a silicon interposer. Both interconnection between the at least two dies and interconnection between a die and a substrate are implemented by using the silicon interposer. In a solution based on the silicon interposer technology, an interconnection line whose line width and node spacing are much less than those of a resin substrate is fabricated on a silicon chip by using a semiconductor process. Therefore, chips with different functions (for example, a CPU (central processing unit) and a DRAM (dynamic random access memory)) may be connected to a same silicon interposer, and complete massive operations and data exchange by using the silicon interposer. The silicon interposer implements wiring by using a through silicon via (TSV) technology. However, a through silicon via fabrication process is a deep reactive ion etching (DRIE) technology; and in a through silicon via filling process, a seed layer is first generated on a surface of a through silicon via by using a physical vapor deposition (PVD) technology, and then the process is completed by means of electroplating.
It can be learned that a 2.5D IC packaging implementation solution in the prior art has disadvantages of a high process difficulty and high production costs. In addition, a size of the silicon interposer is greater than a sum of sizes of all dies. A large-size silicon interposer leads to high consumption (that is, high costs). Consequently, 2.5D IC packaging costs further increase. This is not conducive to miniaturization of a packaging structure.
The present invention provides a packaging structure featuring a low process difficulty, low costs, and miniaturization, and an electronic device having the packaging structure. The present invention further provides a packaging method for fabricating the packaging structure.
To achieve the foregoing objective, implementations of the present invention provide the following technical solutions:
According to a first aspect, the present invention provides a packaging structure, including a substrate, a fan-out unit, and a wiring layer, where the fan-out unit includes a first chip and a second chip, the first chip includes a first pin array, the second chip includes a second pin array, the fan-out unit further includes a third pin array, the first pin array, the second pin array, and the third pin array are all disposed facing the substrate, the first pin array includes multiple first pins, the second pin array includes multiple second pins, and the third pin array includes multiple third pins; the wiring layer bridges over between the first pin array and the second pin array, and is configured to connect each first pin in the first pin array to a corresponding second pin in the second pin array, so as to implement electrical connection between the first chip and the second chip; and the substrate is provided with a soldering pad that is electrically connected to a wiring layer in the substrate, and the third pins are connected to the soldering pad, so as to implement electrical connection between the fan-out unit and the substrate. In a specific implementation, the first chip may be a storage chip, a 3D laminated chip module, a silicon die, a flip chip packaging structure, or a passive element. The second chip and the first chip may be of a same type, or may be of different types. Each third pin in the third pin array is columnar or spherical, and a material of the third pin is copper, tin, or lead.
In an optional implementation, the first chip and the second chip are adjacently disposed, the first pin array and the second pin array are adjacently disposed, and the third pin array is located in an area, other than the first pin array and the second pin array, in the fan-out unit.
Beneficial effects of the packaging structure in the present invention are as follows: The wiring layer bridges over between the first pin array and the second pin array, and is configured to connect the first pins in the first pin array to the corresponding second pins in the second pin array, so as to implement the electrical connection between the first chip and the second chip without a need of disposing an intermediate board with a through-via structure. In addition, because it is easy to fabricate the wiring layer (which may be implemented by using an ordinary layer-adding process), costs are low. In addition, the third pin array is directly connected to the substrate, so that the fan-out unit is connected to the substrate without a need of disposing an intermediate board with a large area, and a process for fabricating a through via on an intermediate board is not required (in the prior art, wiring of the electrical connection between the fan-out unit and the substrate is implemented by using a through silicon via (TSV, through silicon via) technology based on a silicon interposer, and this leads to a high process difficulty and high costs). Therefore, the present invention has advantages of a low process difficulty and low costs. On this basis, a wiring structure of the electrical connection between the fan-out unit and the substrate in the present invention is also conducive to a miniaturization design of a packaging structure.
With reference to the first aspect, in a first possible implementation, the packaging structure further includes an intermediate board disposed between the fan-out unit and the substrate, and the wiring layer is formed on a surface of the intermediate board. The wiring layer is disposed on the intermediate board, and then the intermediate board is installed on the fan-out unit. Therefore, it is easy to implement a fabrication process.
With reference to the first possible implementation of the first aspect, in a second possible implementation, a material of the intermediate board is silicon, glass, or an organic substrate.
With reference to the first possible implementation of the first aspect, in a third possible implementation, the intermediate board and the substrate are isolated from each other. This isolation architecture increases signal isolation of wiring on the wiring layer, thereby facilitating high-density signal transmission. In another implementation, an insulation layer may be disposed between the intermediate board and the substrate to form a laminated contact architecture, and a size of the laminated contact architecture may be minimized.
With reference to the first aspect, in a fourth possible implementation, the wiring layer is formed on surfaces that are of the first pin array and the second pin array and that face the substrate. In this implementation, the wiring layer is directly disposed on the fan-out unit, so that a quantity of elements with a packaging structure is simplified (without using the intermediate board), and a size may also be minimized.
With reference to the first aspect, in a fifth possible implementation, the wiring layer includes a first circuit layer, a reference layer, and a second circuit layer that are sequentially laminated, and the reference layer is a reference plane for the first circuit layer and the second circuit layer. Disposing the reference plane helps improve signal quality and reduce signal crosstalk.
With reference to the first aspect, in a sixth possible implementation, a surface of the first chip and a surface of the second chip form a heat sink surface of the fan-out unit, and the heat sink surface is located on a surface that is of the fan-out unit and that is far away from the substrate. The packaging structure in this implementation has good heat dissipation performance, so that a service life and operation stability of the packaging structure can be improved.
With reference to the sixth possible implementation of the first aspect, in a seventh possible implementation, the packaging structure further includes a heat sink fin, the heat sink fin shields the fan-out unit on the substrate, and the heat sink fin is in contact with the heat sink surface. A design of the heat sink fin further improves the heat dissipation performance, the service life, and the operation stability of the packaging structure.
With reference to the sixth possible implementation of the first aspect, in an eighth possible implementation, the packaging structure further includes a heat sink fin and a thermally conductive adhesive, the heat sink fin shields the fan-out unit on the substrate, and the thermally conductive adhesive is disposed between the heat sink surface and the heat sink fin. The heat sink fin is excellently laminated to the fan-out unit by using the thermally conductive adhesive, thereby enhancing the heat dissipation performance.
According to a second aspect, the present invention provides an electronic device, where the electronic device includes the packaging structure according to any one of the implementations of the first aspect.
According to a third aspect, the present invention provides a packaging method, including:
fabricating a fan-out unit, where the fan-out unit includes a first chip and a second chip, the first chip includes a first pin array, the second chip includes a second pin array, the fan-out unit further includes a third pin array, the first pin array, the second pin array, and the third pin array are all disposed facing the substrate, the first pin array includes multiple first pins, the second pin array includes multiple second pins, and the third pin array includes multiple third pins;
fabricating a wiring layer, where the wiring layer bridges over between the first pin array and the second pin array, and is configured to connect each first pin in the first pin array to a corresponding second pin in the second pin array, so as to implement electrical connection between the first chip and the second chip; and
connecting the third pin array to the substrate, where the substrate is provided with a soldering pad that is electrically connected to a wiring layer in the substrate, and the third pins are connected to the soldering pad, so that the fan-out unit is installed on and electrically connected to the substrate.
Beneficial effects of the packaging method in the present invention are as follows: The wiring layer bridges over between the first pin array and the second pin array, and is configured to connect the first pins in the first pin array to the corresponding second pins in the second pin array, so as to implement the electrical connection between the first chip and the second chip without a need of disposing an intermediate board with a through-via structure. In addition, because it is easy to fabricate the wiring layer (which may be implemented by using an ordinary layer-adding process), costs are low. In addition, the third pin array is directly connected to the substrate, so that the fan-out unit is connected to the substrate without a need of disposing an intermediate board with a large area, and a process for fabricating a through via on an intermediate board is not required (In the prior art, wiring of the electrical connection between the fan-out unit and the substrate is implemented by using a through silicon via (TSV, through silicon via) technology based on a silicon interposer, and this leads to a high process difficulty and high costs.). Therefore, the present invention has advantages of a low process difficulty and low costs. On this basis, a wiring structure of the electrical connection between the fan-out unit and the substrate in the present invention is also conducive to a miniaturization design of the packaging structure.
In a specific implementation, the first chip may be a storage chip, a 3D laminated chip module, a silicon die, a flip chip packaging structure, or a passive element. The second chip and the first chip may be of a same type, or may be of different types. Each third pin in the third pin array is columnar or spherical, and a material of the third pin is copper, tin, or lead.
With reference to the third aspect, in a first possible implementation, the step of fabricating a fan-out unit includes: performing, by using a molding compound, molding packaging on the first chip and the second chip to form the fan-out unit, where a distance between the first chip and the second chip is less than or equal to 50 um, side faces of the first chip and the second chip are wrapped by the molding compound, front sides of the first chip and the second chip form an outer surface of the fan-out unit, and the first pin array and the second pin array are respectively disposed on the front side of the first chip and the front side of the second chip.
Further, both a density of the first pin array and a density of the second pin array are less than a density of the third pin array. In addition, a size of each third pin is greater than a size of each first pin, the size of each third pin is also greater than a size of each second pin, and the size of the first pin may be the same as the size of the second pin.
With reference to the first possible implementation of the third aspect, in a second possible implementation, the step of fabricating a fan-out unit further includes: grinding back sides of the first chip and the second chip of the fan-out unit, so that the back sides of the first chip and the second chip form the outer surface of the fan-out unit, so as to form a heat sink surface of the fan-out unit.
With reference to the second possible implementation of the third aspect, in a third possible implementation, the packaging method further includes: fabricating a heat sink fin; and installing the heat sink fin on the substrate, so that the heat sink fin shields the fan-out unit and is in contact with the heat sink surface.
With reference to the second possible implementation of the third aspect, in a fourth possible implementation, the packaging method further includes: fabricating a heat sink fin, where the heat sink fin is made from a metallic or non-metallic thermally conductive material; coating a thermally conductive adhesive on the heat sink surface; and installing the heat sink fin on the substrate, so that the heat sink fin shields the fan-out unit and is in contact with the thermally conductive adhesive.
With reference to the third aspect, in a fifth possible implementation, the packaging method further includes: providing an intermediate board, where the wiring layer is a circuit layer that is fabricated on a surface of the intermediate board by using a layer-adding process; and laminating the intermediate board to the fan-out unit, so that the wiring layer connects the first pins in the first pin array to the corresponding second pins in the second pin array.
With reference to the third aspect, in a sixth possible implementation, in a process of connecting the third pin array to a substrate, the packaging method further includes a step of adjusting an installation height, where a height difference between the fan-out unit and the substrate is changed by adjusting a size of a connection structure between the third pin array and the substrate.
With reference to the third aspect, in a seventh possible implementation, in the process of connecting the third pin array to a substrate, the packaging method further includes a step of adjusting the installation height, where a groove is disposed on the substrate, and the groove is disposed opposite to the wiring layer, so as to change the height difference between the fan-out unit and the substrate by means of collaboration between the wiring layer and the groove.
To describe the technical solutions in the present invention more clearly, the following briefly describes the accompanying drawings required for describing the implementations. Apparently, the accompanying drawings in the following description show merely some implementations of the present invention, and a person of ordinary skill in the art may still derive other drawings from these accompanying drawings without creative efforts.
The present invention relates to a packaging structure and an electronic device having the packaging structure. The present invention further provides a packaging method for fabricating the packaging structure. The following clearly describes the technical solutions in the implementations of the present invention with reference to the accompanying drawings in the implementations of the present invention.
In the implementation shown in
The first chip 101 may be a storage chip, a 3D laminated chip module, a silicon die, a flip chip packaging structure, or a passive element. The second chip 102 and the first chip 101 may be of a same type, or may be of different types. In the embodiments shown in
In an implementation, both a density of the first pin array A1 and a density of the second pin array A2 are less than a density of the third pin array A3. Referring to
Referring to
The wiring layer 104 bridges over between the first pin array A1 and the second pin array A2, and is configured to connect each first pin 32a in the first pin array A1 to a corresponding second pin 32b in the second pin array A2, so as to implement electrical connection between the first chip 101 and the second chip 102. In an implementation, the wiring layer 104 is connected to the first pin array A1 and the second pin array A2 by using the solder ball 103. The third pin array A3 is connected to the substrate 108, so as to implement electrical connection between the fan-out unit 111 and the substrate 108. In an implementation, the third pin array A3 is connected to the substrate 108 by using the copper cylinders 107. The substrate 108 is provided with a soldering pad 42 that is electrically connected to a wiring layer in the substrate 108 (as shown in
Referring to
A sealing adhesive is further filled between the fan-out unit 111 and the substrate 108. The sealing adhesive is coated on the solder ball 103, the copper cylinders 107, and the wiring layer 104 to strengthen the packaging structure. In an implementation, sealing adhesives are filled between the fan-out unit 111 and the substrate 108 twice to complete a packaging process. First, the wiring layer 104 may be packaged to the fan-out unit 111, and a sealing adhesive 110 is filled between the wiring layer 104 and the fan-out unit. Then, the fan-out unit 111 is packaged to the substrate 108 by using a sealing adhesive 106. The sealing adhesive 110 and the sealing adhesive 106 may be made from different materials. Certainly, alternatively, packaging between the fan-out unit 111 and the substrate 108 may be completed in one packaging process.
The wiring layer 104 may be disposed on a separate substrate, and then the substrate is installed on the fan-out unit 111; or the wiring layer 104 may be directly formed on the fan-out unit 111 regardless of whether a carrier of the wiring layer 104 is the fan-out unit 111 or a separate substrate. A process for fabricating the wiring layer 104 may be implemented by using a layer-adding process. This is similar to a method for fabricating a circuit layer on a surface of a circuit board in the prior art, and a process for fabricating a through via is not required. Therefore, it is easy to fabricate the wiring layer 104, and costs are low. Specific implementations are described below. In an implementation, the packaging structure further includes an intermediate board 105 disposed between the fan-out unit 111 and the substrate 108. The wiring layer 104 is formed on a surface of the intermediate board 105, and then the intermediate board 105 is installed on the first pin array A1 and the second pin array A2 of the fan-out unit 111 by using the solder ball 103. A material of the intermediate board 105 is silicon, glass, or an organic substrate 108. The intermediate board 105 and the substrate 108 are isolated from each other. In another implementation, an insulation layer may be disposed between the intermediate board 105 and the substrate 108 to form a laminated contact architecture. In another implementation, the wiring layer 104 is formed on surfaces that are of the first pin array A1 and the second pin array A2 and that face the substrate 108. In this implementation, the solder ball 103 and the intermediate board 105 do not need to be designed.
Referring to
Referring to
In an implementation, the wiring layer 104 includes a first circuit layer, a reference layer, and a second circuit layer that are sequentially laminated. The reference layer is a reference plane for the first circuit layer and the second circuit layer. The reference layer helps improve signal quality and reduce signal crosstalk. Referring to
In an implementation, the intermediate board 105 is a silicon substrate, and a minimum line width and a minimum line distance of the wiring layer 104 on the intermediate board 105 may be less than or equal to 0.4 um. In another implementation, the intermediate board 105 is a fan-out substrate, and a minimum line width and a minimum line distance of the wiring layer 104 on the intermediate board 105 may be less than or equal to 2 um.
In the packaging structure in the present invention, a wiring layer 104 may be implemented on a surface of a fan-out unit 111 or a surface of an intermediate board 105 by using a layer-adding process (layer-adding is a processing process of forming a film on a die surface, and the film may be an insulator, a semiconductor, or a conductor) without a need of disposing a through-via structure. Therefore, it is easy to fabricate the wiring layer 104, and costs are low. In addition, a third pin array A3 is directly connected to a substrate 108, so that the fan-out unit 111 is connected to the substrate 108 without a need of disposing an intermediate board with a large area, and a process for fabricating a through via on an intermediate board is not required (In the prior art, wiring of electrical connection between the fan-out unit and the substrate is implemented by using a through silicon via (TSV, through silicon via) technology based on a silicon interposer, and this leads to a high process difficulty and high costs.). Therefore, the present invention has advantages of a low process difficulty and low costs. On this basis, a wiring structure of the electrical connection between the fan-out unit 111 and the substrate 108 in the present invention is also conducive to a miniaturization design of the packaging structure.
The present invention further provides a packaging method. Referring to
A fan-out unit 111 is fabricated. The fan-out unit 111 includes a first chip 101 and a second chip 102. The first chip 101 includes a first pin array A1, and the second chip 102 includes a second pin array A2. The fan-out unit 111 further includes a third pin array A3. The first pin array A1, the second pin array A2, and the third pin array A3 are all disposed facing the substrate 108. Specifically, the first chip 101 and the second chip 102 are adjacently disposed, the first pin array A1 is adjacent to the second pin array A2, and the third pin array A3 is distributed in an area, other than the first pin array A1 and the second pin array A2, in the fan-out unit 111.
A wiring layer 104 is fabricated. The wiring layer 104 bridges over between the first pin array A1 and the second pin array A2, and is configured to connect each first pin in the first pin array A1 to a corresponding second pin in the second pin array A2, so as to implement electrical connection between the first chip 101 and the second chip 102.
The third pin array A3 is connected to the substrate 108, so that the fan-out unit 111 is installed on and electrically connected to the substrate 108. The substrate 108 is provided with a soldering pad 42 that is electrically connected to a wiring layer in the substrate 108 (as shown in
Specifically, in an implementation of the present invention, the step of fabricating a fan-out unit 111 includes: performing, by using a molding compound, molding packaging on the first chip 101 and the second chip 102 to form the fan-out unit 111. In the present invention, only two chips are used as an example for description, and multiple chips may be integrated into the fan-out unit 111. That the first chip 101 and the second chip 102 are dies is used as an example. First, an original die is thinned in a grinding manner as required, and specific thicknesses of the first chip 101 and the second chip 102 are determined according to a product requirement and a fabrication process requirement. Then, the original die is cut to form multiple single dies. Then, reconstruction and molding compound plastic packaging are performed on a die that needs to be integrated, so as to form the fan-out unit 111. To ensure a requirement for performance of high-density interconnection between the first chip 101 and the second chip, a distance between the first chip 101 and the second chip 102 is less than or equal to 50 um. Sides of the first chip 101 and the second chip 102 are wrapped by the molding compound, and a thickness for wrapping a side by a molding compound may be flexibly designed, and is usually less than 5 mm.
Front sides of the first chip 101 and the second chip 102 form an outer surface of the fan-out unit 111. The first pin array A1, the second pin array A2, and the third pin array A3 are disposed on the front sides of the first chip 101 and the second chip 102. In an implementation, both a density of the first pin array A1 and a density of the second pin array A2 are less than a density of the third pin array A3. Referring to
In an implementation, the step of fabricating a wiring layer 104 specifically includes: providing an intermediate board 105, where the wiring layer 104 is a circuit layer that is fabricated on a surface of the intermediate board 105 by using a layer-adding process; and laminating the intermediate board 105 to the fan-out unit 111, so that the wiring layer 104 is electrically connected between the first pin array A1 and the second pin array A2. Specifically, a solder ball 103 is fabricated on a surface of the wiring layer 104. A quantity and sizes of the solder balls 103 are the same as a quantity and sizes of the first pins, and a quantity and sizes of the solder balls 103 are the same as a quantity and sizes of the second pins. In a process of laminating the intermediate board 105 to the fan-out unit 111, the lamination is implemented by using a hot air remelting process or a thermo-compression bonding process. The wiring layer 104 is connected between the first pin array A1 and the second pin array A2 by means of collaboration between the solder ball 103 and the first pin and collaboration between the solder ball 103 and the second pin, so as to implement connection between the first chip 101 and the second chip 102. In another implementation, the wiring layer 104 is directly fabricated on a surface of the fan-out unit 111 without using the intermediate board 105 and the solder ball 103. In the two different implementations, the wiring layer 104 may be fabricated by using a layer-adding process. A process difficulty is low, and costs are low. The wiring layer 104 is fabricated by means of passivation, sputtering, electroplating, or the like. Copper may be selected as a wiring material. A minimum line width and a minimum line distance of wiring may be less than or equal to 0.4 um.
In a process of connecting the third pin array A3 to a substrate 108, the copper cylinders 107 are first fastened at a position of a third pin correspondingly, and then the copper cylinders 107 are aligned with a corresponding soldering pad on the substrate 108. The fan-out unit 111 may be laminated to the substrate 108 by means of hot air remelting or thermo-compression bonding.
The packaging method in the present invention further includes a step of adjusting an installation height. A height difference between the fan-out unit 111 and the substrate 108 is changed by adjusting a size of a connection structure (that is, the copper cylinders 107 shown in
In another implementation, a step of adjusting the installation height may be implemented by adjusting a structure between the wiring layer 104 and the substrate 108. Specifically, a groove 1081 is disposed on the substrate 108, and the groove 1081 is disposed opposite to the wiring layer 104. The height difference between the fan-out unit 111 and the substrate 108 is changed by means of collaboration between the wiring layer 104 and the groove 1081. The disposing of the groove 1081 reduces the height difference between the fan-out unit 111 and the substrate 108. This is conducive to a miniaturization design of the packaging structure. In addition, the substrate 108 and the wiring layer 104 are isolated from each other. This isolation architecture increases signal isolation of wiring on the wiring layer 104, thereby facilitating high-density signal transmission.
Referring to
Referring to
Specifically, the heat sink fin 112 is made from a metallic or non-metallic thermally conductive material. A thermally conductive adhesive may be added between the heat sink fin 112 and the heat sink surface. The thermally conductive adhesive is coated on the heat sink surface, and the heat sink fin 112 is installed on the substrate 108, so that the heat sink fin 112 shields the fan-out unit 111 and is in contact with the thermally conductive adhesive.
The substrate 108 in the present invention may be a multi-layer substrate 108, and a wiring layer is disposed in the substrate 108. The fan-out unit 111 is installed on a front side of the substrate 108. A soldering pad 42 corresponding to the third pin array A3 of the fan-out unit 111 is disposed on the front side of the substrate 108 (refer to
The foregoing descriptions are optional implementations of the present invention. It should be noted that a person of ordinary skill in the art may make improvements and polishing without departing from the principle of the present invention, and the improvements and polishing shall fall within the protection scope of the present invention.
Number | Date | Country | Kind |
---|---|---|---|
201511030490.0 | Dec 2015 | CN | national |
This application is a continuation of International Application No. PCT/CN2016/111924, filed on Dec. 24, 2016, which claims priority to Chinese Patent Application No. 201511030490.0, filed on Dec. 31, 2015, both of which are hereby incorporated by reference in their entireties.
Number | Date | Country | |
---|---|---|---|
Parent | PCT/CN2016/111924 | Dec 2016 | US |
Child | 16023181 | US |