Claims
- 1. A method of fabricating a layered superlattice material comprising the steps of:
- providing a substrate, and a precursor containing metal moieties in effective amounts for yielding said layered superlattice material from said precursor:
- applying said precursor to said substrate; and
- rapid thermal processing by heating said precursor on said substrate to a target temperature greater than a crystallizing temperature of said layered superlattice material to form said layered superlattice material on said substrate.
- 2. A method as in claim 1 and further comprising the step of placing said substrate in an enclosure and introducing an atmosphere enriched in oxygen into said enclosure.
- 3. A method as in claim 1 wherein said target temperature ranges from 500.degree. C. to 850.degree. C.
- 4. A method as in claim 3 wherein said target temperature ranges from 675.degree. C. to 750.degree. C.
- 5. A method as in claim 1 wherein said step of rapid thermal processing comprises ramping a temperature of said precursor at a rate ranging from 1.degree. C. per second to 200.degree. C. per second.
- 6. A method as in claim 1 wherein said rapid thermal processing step comprises holding said precursor at said target temperature for a period of time ranging from 5 seconds to 300 seconds.
- 7. A method as in claim 1 and further comprising a step of furnace annealing said substrate subsequent to said step of rapid thermal processing.
- 8. A method as in claim 7 wherein said step of furnace annealing comprises heating said substrate in an atmosphere enriched in oxygen.
- 9. A method as in claim 7 wherein said step of furnace annealing comprises heating said substrate to a temperature of ranging from 700.degree. C. to 850.degree. C.
- 10. A method as set forth in claim 1, further comprising a step of fabricating an integrated circuit to form a plurality of interconnected electrical devices on said substrate.
- 11. A method as in claim 1, further comprising a step of prebaking said substrate to a prebake temperature above said target temperature of said rapid thermal process step prior to said step of applying said precursor to said substrate.
- 12. A method as in claim 1 wherein said precursor is a liquid precursor and further including a step of drying said liquid precursor prior to said step of rapid thermal processing.
- 13. A method as in claim 1 wherein said layered superlattice material comprises a material having a formula:
- SrBi.sub.4-2x+.alpha. {(Ta.sub.y,Nb.sub.1-y).sub.x,(Ti.sub.z,Zr.sub.1-z).sub.2-2x }.sub.2 O.sub.15-6x,
- wherein the subscripts x, y, z, and .alpha. denote limiting quantities used to calculate respective values of atomic elements in said formula, and 0.ltoreq.x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0, 0.ltoreq.z.ltoreq.1.0, and x-2.ltoreq..alpha..ltoreq.1.6(2-x).
- 14. A method as in claim 13 wherein: 0.7.ltoreq.x.ltoreq.1.0, 0.8.ltoreq.y.ltoreq.1.0, 0.6.ltoreq.z.ltoreq.1.0, and 0.ltoreq..alpha..ltoreq.(2-x).
- 15. A method of fabricating a layered superlattice material comprising the steps of:
- providing a substrate and a precursor containing a metal; thereafter
- prebaking said substrate at a target temperature; thereafter
- applying said precursor to said first substrate; and
- heating said precursor on said substrate up to an anneal temperature at most actual to said target temperature to form a layered superlattice material containing said metal on said substrate.
- 16. A method as in claim 15 wherein said target temperature ranges from 500.degree. C. to 1000.degree. C.
- 17. A method of fabricating a layered superlattice material comprising the steps of:
- providing a precursor comprising a metal dissolved in a first solvent, said precursor having a first value of solvent parameter;
- diluting said precursor with a selected quantity of a second solvent to provide said precursor with a second value of said solvent parameter different than said first value; thereafter
- applying said precursor to a substrate; and
- rapid thermal processing said precursor to form a layered superlattice material on said substrate.
- 18. A method as in claim 17 wherein said solvent parameter comprises a parameter selected from the group consisting of solubility, viscosity, and boiling point.
- 19. A method as in claim 17 wherein said first solvent is a xylenes and said second solvent is n-butyl acetate.
- 20. A method of fabricating a layered superlattice material comprising the steps of:
- providing a solution having a solvent and a precursor having metal moieties in an effective amount for yielding the layered superlattice material from said precursor, said precursor having a formula including a respective metal moiety bonded with an organic ligand having a first functional group, said solvent having a second functional group identical to said first functional group;
- applying said solution to a substrate; and
- treating said precursor to form said layered superlattice material on said substrate.
- 21. A method as in claim 20 wherein said precursor comprises a strontium compound dissolved in said n-butyl acetate.
- 22. A method as in claim 20, wherein the functional group is an ester.
- 23. A method as in claim 22, wherein the ester is n-butyl acetate.
- 24. A method of fabricating a layered superlattice material comprising bismuth and other metals, said method comprising the steps of:
- providing a substrate and a precursor including an amount of bismuth as compared to amounts of said other metals in excess of a proportional share of bismuth in a stoichiometric formula for the layered superlattice material comprising bismuth and said metals;
- applying said precursor to said substrate; and
- treating said substrate to produce the layered superlattice material.
- 25. A method as in claim 24 wherein said amount of bismuth is between 105% and 140% of a normal stoichiometric amount of bismuth.
- 26. A method as in claim 24 wherein said layered superlattice material is a material having a formula
- SrBi.sub.4-2x+.alpha. {(Ta.sub.y,Nb.sub.1-y).sub.x,(Ti.sub.z,Zr.sub.1-z).sub.2-2x }.sub.2 O.sub.15-6x,
- wherein the subscripts x, y, z, and .alpha. denote limiting quantities used to calculate respective values of atomic elements in said formula, and 0.ltoreq.x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0, 0.ltoreq.z.ltoreq.1.0, and 0.ltoreq..alpha..ltoreq.1.6(2-x).
- 27. A method as in claim 26 wherein 0.7.ltoreq.x.ltoreq.1.0, 0.8.ltoreq.y.ltoreq.1.0, 0.6.ltoreq.z.ltoreq.1.0, and 0.ltoreq..alpha..ltoreq.1.2(2-x).
- 28. A method as in claim 24 wherein said step of treating comprises heating said precursor on said substrate.
- 29. A method of fabricating a layered superlattice thin film, said method comprising the steps of:
- providing a substrate;
- forming a first thin film by applying to said substrate a first precursor solution including a plurality of metal moieties in first molar portions effective for yielding a first layered superlattice material, said first molar portions being determined with respect to a mole of said first layered superlattice material capable of being formed from said first precursor solution;
- making a second thin film by depositing on said substrate a second precursor solution including said plurality of metal moieties in second molar portions effective for yielding a second layered superlattice material, at least one element of said second molar portions being different from said first molar portions, said second molar proportions being determined with respect to a mole of said second layered superlattice material capable of being formed from said second precursor solution; and
- heating said first and second thin films to form said layered superlattice thin film.
- 30. A method as in claim 29 wherein said first precursor solution comprises a stoichiometric solution and said second precursor solution comprises a solution having an excess amount of an element according to said first molar portion.
- 31. A method as in claim 30, wherein said element according to said first molar portion comprises an element selected from a group consisting of bismuth, thallium, and antimony.
- 32. A method as in claim 29 wherein a thickness of said second thin film is less than or equal to 50% of the total thickness of said layered superlattice thin film.
- 33. A method as in claim 29 wherein said step of heating comprises annealing in a furnace.
- 34. A method as in claim 33 wherein said step of heating is performed at a temperature ranging from 700.degree. C. to 850.degree. C. in an enriched oxygen atmosphere.
- 35. A method as in claim 29 wherein said heating step includes a step of rapid thermal processing of said first and second thin films.
- 36. A method as claim 35, wherein said step of rapid thermal processing comprises ramping the temperature of said first and second thin films at a rate ranging from 1.degree. C. per second to 200.degree. C. per second.
- 37. A method as in claim 35 wherein said step of rapid thermal processing comprises raising said first and second thin films to a target temperature and holding it at said target temperature for from 5 seconds to 300 seconds.
- 38. A method as in claim 29 wherein at least one of said steps of forming said first thin film and making said second thin film includes a step of rapid thermal processing the corresponding thin film.
- 39. A method as in claim 38 wherein said step of rapid thermal processing comprises ramping the temperature of said thin film at a rate of between 1.degree. C. per second and 200.degree. C. per second.
- 40. A method as in claim 38 wherein said step of rapid thermal processing comprises raising said thin film to a target temperature and holding it at said temperature from 5 seconds to 300 seconds.
- 41. A method as in claim 38 wherein at least one of said steps of forming said first thin film and making said second thin film comprises repeating at least one of said steps of applying and depositing to form multiple layers, and said step of rapid thermal processing comprises rapid thermal processing each layer of said multiple layers.
- 42. A method as in claim 38 wherein both said step of forming said first thin film and said step of making said second thin film comprise a step of rapid thermal processing.
- 43. A method of fabricating a layered superlattice material comprising the steps of:
- providing a substrate and an essentially anhydrous liquid precursor containing a plurality of metals capable of forming a layered superlattice material;
- applying said precursor to said substrate; and
- rapid thermal processing said precursor on said substrate to form thereon a layered superlattice material.
- 44. The method as set forth in claim 43, wherein said rapid thermal processing step includes using an electromagnetic radiation heat source in an atmosphere having an oxygen ranging from 20% to 100% to obtain a thermal ramping rate from 1.degree. C. per second to 200.degree. C. per second up to a temperature plateau of from 500.degree. C. to 850.degree. C.
Parent Case Info
This application is a continuation-in-part of U.S. patent application Ser. No. 07/981,133 filed Nov. 24, 1992 and 07/965,190 filed Oct. 23, 1992 which in turn are continuations-in-part of U.S. patent application Ser. No. 07/807,439 filed Dec. 13, 1991, now abandoned, which is a continuation-in-part of U.S. patent application Ser. No. 07/660,428 filed Feb. 25, 1991, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0489519A2 |
Jun 1992 |
EPX |
Continuation in Parts (3)
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Number |
Date |
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Parent |
981133 |
Nov 1992 |
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Parent |
807439 |
Dec 1991 |
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Parent |
660428 |
Feb 1991 |
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