Patent Application
20110089558
The disclosure of Japanese Patent Application No. 2009-240806 filed on Oct. 19, 2009 including the specification, drawings and abstract is incorporated herein by reference in its entirety.
The present invention relates to a semiconductor device and a manufacturing technology thereof. More particularly, it relates to a technology effectively applicable to a semiconductor device for use in, for example, in-vehicle motor control, and manufacturing thereof.
Japanese Unexamined Patent Publication No. 2008-21796 (Patent Literature 1) describes a package in which an IGBT chip including an IGBT formed therein, and a diode chip including a diode formed therein are sealed by one sealing body.
Japanese Unexamined Patent Publication No. 2004-165281 (Patent Literature 2) describes the following technology: in such a manner as to expose the bottom of a heatsink including a power semiconductor chip mounted over the top surface thereof, the heatsink and the power semiconductor chip are sealed to form a sealing body; and an insulation sheet including a metal layer and an insulation resin layer is fixed thereto so as to be in contact with the portion of the heatsink exposed from the bottom surface of the sealing body.
For example, to each phase of a three-phase motor, as switching elements, two IGBTs and two diodes (free wheel diodes) are coupled. Namely, to the three-phase motor, six IGBTs and six diodes are coupled. Herein, for example, when a package obtained by integrating one IGBT and one diode into one package is used, a three-phase motor requires six sets of the packages. The packages are to be mounted in a car on the part of a customer using the packages for in-vehicle motor control. However, mounting of six packages unfavorably causes an increase in working steps, and an increase in material cost for mounting of the packages. In other words, when a single package obtained by integrating one IGBT and one diode into one package is supplied to a customer (e.g., automaker or automotive electric equipment manufacturer), the mounting burden on the part of the customer unfavorably increases.
It is an object of the present invention to provide a technology capable of reducing the mounting burden on the part of a customer who is a recipient of packages.
The foregoing and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
Summaries of the representative ones of the inventions disclosed in the present application will be described in brief as follows.
A semiconductor device in accordance with a typical embodiment has: a first package including a first semiconductor chip including a first switching element formed therein and a first diode chip including a first diode formed therein, and a first sealing body, the first semiconductor chip and the first diode chip being sealed with the first sealing body; and a second package including a second semiconductor chip including a second switching element formed therein and a second diode chip including a second diode formed therein, and a second sealing body, the second semiconductor chip and the second diode chip being sealed with the second sealing body. The first package has (a1) a first external coupling emitter electrode protruding from a first side of the first sealing body, (a2) a first external coupling collector electrode protruding from a second side of the first sealing body opposite to the first side thereof, and (a3) a first external coupling gate electrode protruding from the first side of the first sealing body. The second package has (b1) a second external coupling emitter electrode protruding from a first side of the second sealing body, (b2) a second external coupling collector electrode protruding from a second side of the second sealing body opposite to the first side thereof, and (b3) a second external coupling gate electrode protruding from the first side of the second sealing body. With this configuration, the semiconductor device includes: (c) a metal board including an insulation layer formed over the surface thereof; (d) the first package mounted over the insulation layer via an insulation adhesion layer; (e) the second package mounted over the insulation layer via the insulation adhesion layer; and (f) a metal board fixing screw hole formed in the metal board.
Further, a semiconductor device in accordance with another typical embodiment has: a first package including a first semiconductor chip including a first switching element formed therein and a first diode chip including a first diode formed therein, and a first sealing body, the first semiconductor chip and the first diode chip being sealed with the first sealing body; and a second package including a second semiconductor chip including a second switching element formed therein and a second diode chip including a second diode formed therein, and a second sealing body, the second semiconductor chip and the second diode chip being sealed with the second sealing body. The first package has (a1) a first external coupling emitter electrode protruding from a first side of the first sealing body, (a2) a first external coupling collector electrode protruding from a second side of the first sealing body opposite to the first side thereof, and (a3) a first external coupling gate electrode protruding from the first side of the first sealing body. The second package has (b1) a second external coupling emitter electrode protruding from a first side of the second sealing body, (b2) a second external coupling collector electrode protruding from a second side of the second sealing body opposite to the first side thereof, and (b3) a second external coupling gate electrode protruding from the first side of the second sealing body. With this configuration, the semiconductor device includes: (c) a metal board; (d) a first insulation sheet mounted over the metal board; (e) the first package mounted over the first insulation sheet; and (f) the second package mounted over the first insulation sheet. Further, the semiconductor device includes: (g) a pressing plate disposed across over the first package and over the second package; (h) a metal board fixing screw hole formed in the metal board; (i) a first pressing plate fixing screw hole formed in the metal board; and (j) a second pressing plate fixing screw hole formed in the pressing plate. Then, the semiconductor device includes (k) a pressing plate fixing screw to be inserted into both of the first pressing plate fixing screw hole and the second pressing plate fixing screw hole, for fixing the pressing plate to the metal board.
A method for manufacturing a semiconductor device in accordance with a typical embodiment includes the steps of: (a) preparing a first package including a first semiconductor chip including a first switching element formed therein and a first diode chip including a first diode formed therein, and a first sealing body, the first semiconductor chip and the first diode chip being sealed with the first sealing body; and (b) preparing a second package including a second semiconductor chip including a second switching element formed therein and a second diode chip including a second diode formed therein, and a second sealing body, the second semiconductor chip and the second diode chip being sealed with the second sealing body. Then, the method includes the steps of: (c) preparing a metal board including an insulation layer over the surface thereof; and (d) forming an insulation adhesion layer over the insulation layer formed over the metal board. Further, the method includes the steps of: (e) mounting the first package and the second package over the insulation adhesion layer; and (f) curing the insulation adhesion layer, and thereby bonding the insulation layer with the first package, and the insulation layer with the second package.
Further, a method for manufacturing a semiconductor device in accordance with another typical embodiment includes the steps of: (a) preparing a first package including a first semiconductor chip including a first switching element formed therein and a first diode chip including a first diode formed therein, and a first sealing body, the first semiconductor chip and the first diode chip being sealed with the first sealing body; and (b) preparing a second package including a second semiconductor chip including a second switching element formed therein and a second diode chip including a second diode formed therein, and a second sealing body, the second semiconductor chip and the second diode chip being sealed with the second sealing body. Then, the method includes the steps of: (c) preparing a metal board including a metal board fixing screw hole and a first pressing plate fixing screw hole formed therein; (d) mounting an insulation sheet over the metal board; and (e) mounting the first package and the second package over the insulation sheet. Further, the method includes a step of: (f) mounting a pressing plate including a second pressing plate fixing screw hole formed therein across over the first package and over the second package, and disposing the pressing plate such that the second pressing plate fixing screw hole overlaps the first pressing plate fixing screw hole in plan view. Subsequently, the method includes a step of (g) inserting a pressing plate fixing screw into the second pressing plate fixing screw hole and the first pressing plate fixing screw hole, and fixing the pressing plate to the metal board.
Still further, a method for manufacturing a semiconductor device in accordance with a still further typical embodiment relates to a method for manufacturing a semiconductor device, the device having: a first package including a first semiconductor chip including a first switching element formed therein and a first diode chip including a first diode formed therein, and a first sealing body, the first semiconductor chip and the first diode chip being sealed with the first sealing body; and a second package including a second semiconductor chip including a second switching element formed therein and a second diode chip including a second diode formed therein, and a second sealing body, the second semiconductor chip and the second diode chip being sealed with the second sealing body. Specifically, in this semiconductor device, the first package has a first external coupling emitter electrode protruding from a first side of the first sealing body, a first external coupling collector electrode protruding from a second side of the first sealing body opposite to the first side thereof, and a first external coupling gate electrode protruding from the first side of the first sealing body. The second package has a second external coupling emitter electrode protruding from a first side of the second sealing body, a second external coupling collector electrode protruding from a second side of the second sealing body opposite to the first side thereof, and a second external coupling gate electrode protruding from the first side of the second sealing body. The method for manufacturing a semiconductor device thus configured includes the following steps (a) to (e). (a) There is prepared the first package in which the bottom surface of a first heat spreader including the first semiconductor chip and the first diode chip mounted thereover, and electrically coupled with the first external coupling collector electrode is exposed from the bottom surface of the first sealing body. In the first package, the top surface of a first conductive member directly or indirectly coupled with the first semiconductor chip and the first diode chip, and electrically coupled with the first external coupling emitter electrode is exposed from the top surface of the first sealing body opposite to the bottom surface thereof. Then, (b) there is prepared the second package in which the bottom surface of a second heat spreader including the second semiconductor chip and the second diode chip mounted thereover, and electrically coupled with the second external coupling collector electrode is exposed from the bottom surface of the second sealing body. In the second package, the top surface of a second conductive member directly or indirectly coupled with the second semiconductor chip and the second diode chip, and electrically coupled with the second external coupling emitter electrode is exposed from the top surface of the second sealing body opposite to the bottom surface thereof. Subsequently, (c) there is prepared a metal board including a metal board fixing screw hole and a first pressing plate fixing screw hole formed therein. Thereafter, (d) a first insulation sheet is mounted over the metal board; and (e) the first package and the second package are mounted over the first insulation sheet such that the bottom surface of the first package and the bottom surface of the second package are in contact with the first insulation sheet. Further, the method includes the following steps (f) and (g). (f) A second insulation sheet is mounted across over the top surface of the first package and over the top surface of the second package; and (g) a pressing plate including a second pressing plate fixing screw hole formed therein is mounted over the second insulation sheet, and the pressing plate is disposed such that the second pressing plate fixing screw hole overlaps the first pressing plate fixing screw hole in plan view. Then, the method includes the following step. (h) A pressing plate fixing screw is inserted into the second pressing plate fixing screw hole and the first pressing plate fixing screw hole, thereby to fix the pressing plate to the metal board.
The effects obtainable by the typical ones out of the inventions disclosed in the present application will be briefly described as follows.
Integration into a composite package eliminates the necessity for a customer who is a recipient of the package to mount a plurality of single packages, resulting in a reduction of the mounting burden on the part of the customer.
In the following embodiment, the embodiment may be described in a plurality of divided sections or embodiments for convenience, if required. However, unless otherwise specified, these are not independent of each other, but are in a relation such that one is a modification example, details, complementary explanation, or the like of a part or the whole of the other.
Further, in the following embodiments, when a reference is made to the number of elements, and the like (including number, numerical value, quantity, range, or the like), unless otherwise specified, or except the case where the number is apparently limited to a specific number in principle, the number of elements is not limited to the specific number, but may be greater than or less than the specific number.
Further, in the following embodiments, it is naturally understood that the constitutional elements (including element steps, or the like) are not always essential, unless otherwise specified, or except the case where they are apparently considered essential in principle, or except for other cases.
Similarly, in the following embodiments, when a reference is made to the shapes, positional relationships, or the like of the constitutional elements, or the like, it is understood that they include ones substantially analogous or similar to the shapes or the like, unless otherwise specified, or unless otherwise considered apparently in principle, or except for other cases. This also applies to the foregoing numerical values and ranges.
Whereas, in all the drawings for describing the embodiments, the same members are given the same reference signs and numerals in principle, and a repeated description thereon is omitted. Incidentally, for ease of understanding of the drawings, hatching may be provided even in a plan view.
A semiconductor device of Embodiment 1 is for use in a driving circuit of a three-phase motor to be used for, for example, a hybrid car.
Then, the IGBT 4 and the diode 5 are, as shown in
The diode 5 is unnecessary when the load is a pure resistance not including an inductance. This is because there is no return energy in such a case. However, when the load is coupled with a circuit including an inductance such as a motor (e.g., three-phase motor), there is a mode in which a load current flows in the opposite direction to the direction of current flow through the switch (IGBT 4) in ON state. In this case, a single switching element such as the IGBT 4 has no function of allowing the reverse current to flow. Therefore, a diode is required to be anti-parallel coupled with the switching element such as the IGBT 4. Namely, in the case where in the inverter circuit, the load includes an inductance as with motor control, when the switching element such as the IGBT 4 is turned off, the energy (½LI2) stored in inductance must be necessarily released. The single IGBT 4 cannot allow a flow of a reverse current for releasing the energy stored in the inductance. Thus, in order to return the electric energy stored in the inductance, the diode 5 is anti-parallel coupled to the IGBT 4. In other words, the diode 5 has a function of allowing a flow of a reverse current for releasing the electric energy stored in the inductance. Incidentally, it is also necessary to impart the high-frequency characteristics to the diode 5 according to the switching frequency of the IGBT 4.
The power semiconductor device 2 thus configured is formed in a package. The semiconductor device in Embodiment 1 relates to the packaging technology of the power semiconductor device 2 of
Then, the internal structure of the single package PAC will be described.
In
Over the heat spreader HS, a semiconductor chip (first semiconductor chip) CHP1 including an IGBT formed therein is formed via a solder S1. A semiconductor chip (second semiconductor chip) DCHP1 including a diode formed therein is formed in such a manner as to be adjacent to the semiconductor chip CHP1 including an IGBT formed therein via the solder S1. On the back surface side of the semiconductor chip CHP1 including an IGBT formed therein, a collector electrode is formed. The collector electrode is coupled to the heat spreader HS via the solder S1. In other words, the collector electrode formed on the back surface of the semiconductor chip CHP1 is electrically coupled with the external coupling collector electrode CE via the heat spreader HS. On the other hand, on the back surface side of the semiconductor chip DCHP1 including a diode formed therein, a cathode electrode is formed. The cathode electrode is electrically coupled with the external coupling collector electrode CE via the heat spreader HS. This results in that the collector electrode of the IGBT and the cathode electrode of the diode are electrically coupled with each other.
On the other hand, on the top surface (main surface) side of the semiconductor chip CHP1 including an IGBT formed therein, an emitter electrode and a plurality of bonding pads are formed. In contrast, on the top surface (main surface) side of the semiconductor chip DCHP1 including a diode formed therein, an anode electrode is formed. Then, the emitter electrode formed on the top surface side of the semiconductor chip CHP1 including an IGBT formed therein, and the anode electrode formed on the top surface side of the semiconductor chip DCHP1 including a diode formed therein are coupled with each other by a plate-like clip CLP via a solder S2. Therefore, the emitter electrode of the IGBT and the anode electrode of the diode are electrically coupled with each other by the clip CLP. The clip CLP is also referred to as a plate-like electrode. Below, as the plate-like electrode, the term “clip CLP” will be used. Further, the main surface of the semiconductor chip CHP1 including an IGBT formed therein means the top surface of the semiconductor chip CHP1 including an IGBT formed therein. Namely, the main surface of the semiconductor chip CHP1 including an IGBT formed therein denotes the surface of the semiconductor chip CHP1 opposite to the surface thereof in contact with the heat spreader HS. Similarly, the main surface of the semiconductor chip DCHP1 including a diode formed therein means the top surface of the semiconductor chip DCHP1 including a diode formed therein. Namely, the main surface of the semiconductor chip DCHP1 including a diode formed therein denotes the surface of the semiconductor chip DCHP1 opposite to the surface thereof in contact with the heat spreader HS.
The clip CLP includes, for example, a plate-like member including copper as a main component. The clip CLP electrically couples the emitter electrode of the semiconductor chip CHP1 including an IGBT formed therein, and the anode electrode of the semiconductor chip DCHP1 including a diode formed therein. In the related art, the emitter electrode of the semiconductor chip CHP1 including an IGBT formed therein, and the anode electrode of the semiconductor chip DCHP1 including a diode formed therein are often coupled by a wire including aluminum as a main component. However, a large electric current flows through the emitter electrode. Therefore, with the wire including aluminum as a main component, the ON resistance unfavorably increases due to an increase in resistance by aluminum, an increase in resistance by the thin line, and the like. Further, the wire is a thin line, and hence the heat capacity is small, which unfavorably causes deterioration of the heat radiation characteristics. Thus, according to Embodiment 1, the emitter electrode of the semiconductor chip CHP1 including an IGBT formed therein and the anode electrode of the semiconductor chip DCHP1 including a diode formed therein are coupled with each other by the plate-like clip CLP including copper as a main component. The resistance of copper is smaller than the resistance of aluminum. Therefore, coupling by the clip CLP including copper as a main component can reduce the ON resistance. Further, the clip CLP is in the shape of a wide plate, and hence, has a larger cross-sectional area than that of a wire. For this reason, use of the clip CLP can further reduce the ON resistance. Further, the clip CLP is in the shape of a plate, and hence, the heat capacity possessed by the clip CLP itself can be made larger than the heat capacity of the wire itself. In addition, the contact area between the semiconductor chip CHP1 or the semiconductor chip DCHP1 and the clip CLP can be made larger than that with coupling by a wire. Therefore, the heat radiation efficiency can be improved.
The external coupling emitter electrode EE is formed in such a manner as to be integrated with the clip CLP. The external coupling emitter electrode EE is formed on the side of a first side FS of the heat spreader HS opposite to the side of a second side SS thereof coupled with the external coupling collector electrode CE, and is not electrically coupled with the heat spreader HS. Namely, when the external coupling emitter electrode EE is coupled with the heat spreader HS, the external coupling collector electrode CE is directly coupled with the external coupling emitter electrode EE. Therefore, there is adopted such a configuration so as to prevent a short-circuit. In other words, the external coupling emitter electrode EE is coupled with the emitter electrode of the semiconductor chip CHP1 including an IGBT formed therein via the clip CLP. In the external coupling emitter electrode EE, a screw opening EOP is also formed as with the external coupling collector electrode CE.
On the side of the first side FS of the heat spreader HS at which the external coupling emitter electrode EE is formed, and on the side of the second side SS opposite to the first side FS, signal electrodes SE shown in
The clip CLP is disposed in such a manner as to be interposed between the signal electrodes SE. Herein, the clip CLP is interposed between the temperature detecting electrode TE2 and the external coupling gate electrode GE. Such arrangement makes the route between the clip CLP and the integrated external coupling emitter electrode EE shorter and linear. Therefore, as compared with the case of the arrangement such that the clip CLP is not interposed between the signal electrodes SE, and extends in a circuitous path, the ON resistance can be reduced. Incidentally, the arrangement of the clip CLP is not limited to the arrangement in which the clip CLP is disposed between the temperature detecting electrode TE2 and the external coupling gate electrode GE. The clip CLP may be disposed between other signal electrodes SE.
The signal electrodes SE are coupled with the bonding pads formed over the top surface of the semiconductor chip CHP1 including an IGBT formed therein, respectively, using wires W in the sealing body MS. Therefore, the semiconductor chip CHP1 including an IGBT formed therein is disposed on the side closer to the first side FS of the heat spreader HS than the semiconductor chip DCHP1 including a diode formed therein. With such arrangement, it is possible to dispose the bonding pads formed over the semiconductor chip CHP1 in proximity to the temperature detecting electrodes TE1 and TE2, the external coupling gate electrode GE, the Kelvin detecting electrode KE1, and the current detecting electrode IE. This facilitates coupling between the bonding pads and the electrodes by the wires W. Further, on the side of the second side SS of the heat spreader HS opposite to the first side FS thereof, the Kelvin detecting electrode KE2 to be coupled with the external coupling collector electrode CE is formed.
Then,
Subsequently, by showing the circuit configuration of the elements formed in the semiconductor chip CHP1, respective functions of the signal electrodes SE disposed in the single package PAC will be described.
The detecting IGBT 11 is provided in order to detect the electric current flowing between collector and emitter of the IGBT 10. Namely, the detecting IGBT 11 is provided as an inverter circuit in order to detect the electric current flowing between collector and emitter of the IGBT 10 for protecting the IGBT 10. The detecting IGBT 11 is coupled to the same collector electrode 13 and gate electrode 14 as those of the IGBT 10, and has a sense emitter electrode 15. The sense emitter electrode 15 is coupled through an internal wire to a bonding pad formed over the top surface of the semiconductor chip CHP1. The bonding pad is coupled to the current detecting electrode IE shown in
The temperature detecting diode 16 is provided in order to detect the temperature of the IGBT 10. Namely, the voltage of the temperature detecting diode 16 varies according to the temperature of the IGBT 10. As a result, the temperature of the IGBT 10 is detected. The temperature detecting diode 16 includes a pn junction formed by introducing impurities of a different conductivity type into polysilicon, and has a cathode electrode 17 and an anode electrode 18. The cathode electrode 17 is coupled through an internal wire to a bonding pad formed over the top surface of the semiconductor chip CHP1. Similarly, the anode electrode 18 is coupled through an internal wire to a bonding pad formed over the top surface of the semiconductor chip CHP1. Therefore, the cathode electrode 17 of the temperature detecting diode 16 is coupled through the bonding pad to the temperature detecting electrode TE1 shown in
Then, from the emitter electrode 12 of the IGBT 10, a common emitter electrode 19 which is another external extends. The common emitter electrode 19 is coupled through an internal wire to a bonding pad formed over the top surface of the semiconductor chip CHP1. The bonding pad is coupled to the Kelvin detecting electrode KE1 shown in
Similarly, as shown in
Thus, according to the single package PAC in Embodiment 1, coupling can be established with the current detecting circuit, the temperature detecting circuit, and the Kelvin detecting circuit. This can improve the operation reliability of the IGBT 10 included in the single package PAC.
The single package PAC in Embodiment 1 is configured as described above. In general, the thus formed single package PAC is shipped as a product to, for example, an automaker (customer) manufacturing a hybrid car using a three-phase motor. In this case, the single package PAC shipped as a product is to be mounted in a car on the part of the customer. However, for one three-phase motor, six single packages PAC are required to be mounted. This unfavorably results in an increase in number of working steps on the part of the customer, and an increase in material cost for mounting the packages. These problems have been pointed out by the customer. In other words, although the shipped single packages are mounted, for example, on the part of the customer, the working step of mounting six single packages PAC for one three-phase motor is complicated. Further, with the single package PAC, as shown in
Thus, in Embodiment 1, not the single package PAC, but a composite package obtained by further improving the single package PAC is formed. The composite package is supplied to a customer, which reduces the mounting burden on the part of the customer. Below, the configuration of the improved composite package will be described by reference to the accompanying drawings.
The metal board MB is formed of a material with a good thermal conductivity such as an aluminum board or a copper board. In a region outside the region in which the single package PAC1 and the single package PAC2 are mounted out of the region of the metal board MB, metal board fixing screw holes H1 are formed. The metal board fixing screw holes H1 are formed in the four corners of the metal board MB in the shape of a rectangle.
The insulation adhesion sheet IAS formed over the metal board MB includes, for example, a thermosetting resin. Specifically, the insulation adhesion sheet IAS is in a structure in which a base resin including a silicone resin or an epoxy resin is filled with a filler including ceramics such as aluminum oxide (Al2O3) or boron nitride or glass cloth.
The single package PAC1 and the single package PAC2 have the structure described by reference to
Similarly, in the central part of the single package PAC2, a sealing body MS2 in the shape of generally a rectangle in plan view is formed. At the top of the sealing body MS2, there are provided the external coupling collector electrode CE2 and some of the signal electrodes SE2. Then, at the bottom of the sealing body MS2 opposite to the top thereof at which the external coupling collector electrode CE2 is formed, there are formed the external coupling emitter electrode EE2 and others of the signal electrodes SE2. Then, in the external coupling collector electrode CE2, a screw opening COP2 is formed. In the external coupling emitter electrode EE2, a screw opening EOP2 is formed.
The thus formed composite package CPAC1 has a feature in that over the metal board MB, the single package PAC1 and the single package PAC2 are mounted together to form one composite package CPAC1. As a result, as compared with the case where six single packages are mounted, the number of packages to be mounted becomes smaller in the case where three composite packages CPAC1 are mounted. This can reduce the mounting burden on the part of the customer. Namely, when the single packages are mounted on the part of a customer, one three-phase motor requires mounting of six single packages therein. However, when the composite packages CPAC1 are mounted on the part of a customer, one three-phase motor requires mounting of only three composite packages CPAC1. Therefore, by supplying the composite packages CPAC1 to a customer, it is possible to obtain an effect of allowing a large reduction of the mounting burden on the part of the customer.
Further, the composite package CPAC1 includes the single package PAC1 and the single package PAC2 which have been previously determined as good products. For this reason, the composite package CPAC1 has a very low risk of becoming defective (malfunctioning). In other words, a composite package has such a structure that a plurality of semiconductor chips including IGBTs formed therein (IGBT chips) and semiconductor chips including diodes formed therein (diode chips) are integrated into one package. For such a composite package, for example, when one chip is defective, or when defective assembly occurs even at one site, the whole composite package becomes defective. This results in a situation in which all of good chips and other members must be disposed of. This incurs a reduction of the yield of the composite packages, leading to an increase in cost. Accordingly, as described above, by combining the single packages, and forming a composite package, it is possible to implement the improvement of the yield of the composite packages, and cost reduction thereof.
The composite package CPAC1 in Embodiment 1 is mounted in the following manner. Into the metal board fixing screw holes H1 provided in the four corners of the metal board MB, metal board fixing screws are inserted, for engagement with, for example, the housing cover of a motor. This means that, when the composite package CPAC1 is mounted on the part of a customer, it is not necessary to press the top surface (package body surface) of the composite package CPAC1 with press-down fittings. For this reason, it is possible to prevent: breakage of the single package PAC1 or the single package PAC2 mounted in the composite package CPAC1 due to pressing of the press-down fittings thereagainst; breakage of the semiconductor chips mounted inside the single packages PAC1 and PAC2 due to a pressing force thereon; and the like. Further, mounting of the composite package CPAC1 does not require press-down fittings, and the like. This means that the mounting cost can be reduced on the part of the customer. Namely, with the composite package CPAC1 in Embodiment 1, only by inserting the metal board fixing screws into the metal board fixing screw holes H1 provided in the four corners of the metal board MB, it is possible to mount the composite package CPAC1. Accordingly, all that must be prepared on the part of a customer are metal board fixing screws. Other press-down fittings, and the like are not required to be prepared. Therefore, the mounting cost can be reduced.
Further, the composite package CPAC1 in Embodiment 1 has a feature in that the direction of mounting of the single package PAC1 mounted over the metal board MB is opposite to the direction of mounting of the single package PAC2. In other words, as shown in
For example, the single package PAC1 mounted in the composite package CPAC1 is a package including the IGBT 4 and the diode 5 sealed therein to be coupled between the power supply potential (Vcc) and the three-phase motor shown in
Subsequently, further advantages of the composite package CPAC1 in Embodiment 1 will be described.
Thus, in the composite package CPAC1 in Embodiment 1, with the insulation layer of the two layers of the insulation layer IL formed over the surface of the metal board MB, and the insulation adhesion sheet IAS formed over the insulation layer IL, the single packages PAC1 and PAC2 and the metal board MB are insulated from each other. For this reason, it is possible to improve the insulation reliability between the single package PAC1 (heat spreader HS) and the metal board MB, and between the single package PAC2 (heat spreader HS) and the metal board MB. Then, in the composite package CPAC1 in Embodiment 1, the back surface of the single package PAC1, and the back surface of the single package PAC2 are insulated by the insulation adhesion sheet IAS and the insulation layer IL. This eliminates the necessity of insulating the back surface of the single package PAC1, and the back surface of the single package PAC2 in the mounting step on the part of a customer. For this reason, it is possible to omit the preparation of the insulating material, and mounting of the insulating material on the part of the customer. This means that reduction of the mounting cost and simplification of the mounting step on the part of the customer can be implemented.
Further, in the composite package CPAC1 in Embodiment 1, the single packages PAC1 and PAC2 and the insulation adhesion sheet IAS are bonded to each other. Therefore, the heat generated from the single package PAC1 or the single package PAC2 is dissipated toward the insulation adhesion sheet IAS with efficiency. In other words, in Embodiment 1, the single packages PAC1 and PAC2 and the insulation adhesion sheet IAS are bonded to each other. This enables the reduction of the thermal contact resistance between the single packages PAC1 and PAC2 and the insulation adhesion sheet IAS. As a result, in the composite package CPAC1 in Embodiment 1, the heat generated in the single packages PAC1 and PAC2 can be dissipated to the outside with efficiency, which can improve the operation reliability of the composite package CPAC1.
The composite package CPAC1 in Embodiment 1 is configured as described above. Below, a description will be given to the configuration of a composite package CPAC2 which is a modified example thereof.
Herein, the composite package CPAC2 which is the present modified example has a feature in that, as shown in
On the other hand, for the composite package CPAC1 shown in
As described up to this point, the composite package CPAC1 in Embodiment 1 and the composite package CPAC2 in the modified example respectively have different advantages, but have the same basic structure. Therefore, in Embodiment 2, by taking the composite package CPAC1 in Embodiment 1 as an example, the manufacturing method thereof will be described by reference to the accompanying drawings.
First, for example, by using the technology described in Patent Literature 1, the single package PAC1 and the single package PAC2 are formed (S101 of
Subsequently, as shown in
Then, as shown in
Then, as shown in
Subsequently, the metal board MB including the single package PAC1 and the single package PAC2 mounted thereover is subjected to a heat treatment. In other words, the insulation adhesion sheet IAS is subjected to cure baking (S105 of
In Embodiment 1, a description was given to the composite package CPAC1 in which the metal board MB and the single package PAC1 (single package PAC2) were bonded to each other through the insulation adhesion sheet IAS. However, in Embodiment 3, a description will be given to a composite package CPAC3 in which the metal board MB and the single package PAC1 (single package PAC2) are fixed by a pressing plate.
The metal board MB is formed of, for example, an aluminum board or a copper board. In the four corners thereof, the metal board fixing screw holes H1 are formed. Whereas, the insulation sheet IS is in a structure in which a base resin including a silicone resin or an epoxy resin is filled with a filler including ceramics such as aluminum oxide (Al2O3) or boron nitride or glass cloth. Further, the pressing plate PP is desirably formed of, for example, stainless steel from the viewpoint of ensuring the pressing strength, and is desirably formed of, for example, copper from the viewpoint of ensuring favorable thermal conductivity.
The single package PAC1 and the single package PAC2 have the structure described by reference to
Similarly, in the central part of the single package PAC2, the sealing body MS2 in the shape of generally a rectangle in plan view is formed. At the top of the sealing body MS2, there are provided the external coupling collector electrode CE2 and some of the signal electrodes SE2. Then, at the bottom of the sealing body MS2 opposite to the top thereof at which the external coupling collector electrode CE2 is formed, there are formed the external coupling emitter electrode EE2 and others of the signal electrodes SE2. Then, in the external coupling collector electrode CE2, a screw opening COP2 is formed. In the external coupling emitter electrode EE2, a screw opening EOP2 is formed.
The thus configured composite package CPAC3 has a feature in that the single package PAC1 and the single package PAC2 mounted over the metal board MB via the insulation sheet IS are pressed and fixed with the pressing plate PP. In other words, the composite package CPAC3 in Embodiment 3 does not assume a configuration in which the single package PAC1 and the single package PAC2 are bonded to the insulation adhesion sheet IAS. However, the composite package CPAC3 has a feature in that the single package PAC1 and the single package PAC2 are fixed in such a manner as to be pressed by the pressing plate PP.
As a result, the composite package CPAC3 in Embodiment 3 has an advantage of allowing replacement of the single package PAC1 (single package PAC2) which has become defective with a normal single package upon occurrence of a defect in the single package PAC1 (single package PAC2). This is for the following reason: in the composite package CPAC3 in Embodiment 3, the single package PAC1 and the single package PAC2 are not bonded to the insulation sheet IS, but are fixed thereto by the pressing plate PP. In other words, in the composite package CPAC3 in Embodiment 3, by unscrewing the pressing plate fixing screw SRW fixing the pressing plate PP, fixing by the pressing plate PP is released, which allows the single package PAC1 and the single package PAC2 to come apart (to be disassembled). Out of the single packages PAC1 (single packages PAC2) thus disassembled, a defective product is replaced with a normal product. Then, again, the single package PAC1 (single package PAC2) which is a normal product is mounted over the insulation sheet IS, and is pressed by the pressing plate PP. Then, the pressing plate PP can be fixed to the metal board MB by the pressing plate fixing screw SRW. Thus, the composite package CPAC3 in Embodiment 3 has repairability of allowing replacement of defective products with ease.
Particularly, in the composite package including a plurality of single packages mounted therein, the repairability is important. The composite package has repairability. This can avoid the situation in which when some one single package becomes defective, other good single packages are also disposed of. This also leads to the improvement of the manufacturing yield of the composite packages, and is also effective for reduction of the overall cost of the composite package.
Subsequently, the composite package CPAC3 in Embodiment 3 has a feature in that the selectivity of the insulation sheet IS can be improved. For example, when the insulation adhesion sheet IAS having adhesion properties is used as in Embodiment 1, both of the insulation properties and the adhesion properties are required thereof. For this reason, the materials for the insulation adhesion sheet IAS are limited. In contrast, the insulation sheet IS in Embodiment 3 is not required to have adhesion properties. This results in a wider range of choices for the materials. In other words, for the insulation sheet IS, the characteristics such as thermal conductivity and dielectric strength are regarded as important. However, when the materials are limited to the materials having the adhesion properties out of them, it becomes difficult to optimize the thermal conductivity, the dielectric strength, and the like. In contrast, when the adhesion properties are not required, the range of choices for the materials for the insulation sheet IS is widened. For this reason, the material for the insulation sheet IS can be selected according to the demands of various customers.
Generally, when the thermal conductivity is regarded as important, the insulation sheet IS with a high filling ratio of the filler FR is used. On the other hand, when the dielectric strength is regarded as important, the insulation sheet IS with a high content of the base resin BR is used. Therefore, the composite package CPAC3 in Embodiment 3 can be disassembled into respective structural members with ease by removing the pressing plate PP. Accordingly, the insulation sheet IS can be replaced with the one having the optimum characteristics according to the intended use. Namely, the composite package CPAC3 in Embodiment 3 can be said to be excellent in selectivity for the insulation sheet IS. For example, the following measures can be taken: for a customer who places importance on the thermal conductivity (heat radiation characteristics), the insulation sheet IS with a high filling ratio of the filler FR is used; whereas, for a customer who places importance on the dielectric strength, the insulation sheet IS with a high content of the base resin BR is used.
The composite package CPAC3 in Embodiment 3 is configured as described above. Below, a description will be given to the configuration of a composite package CPAC4 which is a modified example thereof.
Whereas,
Herein, the composite package CPAC4 which is the present modified example has a feature in that, as shown in
On the other hand, in the composite package CPAC3 shown in
As described up to this point, the composite package CPAC3 in Embodiment 3 and the composite package CPAC4 in the modified example respectively have different advantages, but have the same basic structure. Therefore, in Embodiment 4, by taking the composite package CPAC3 in Embodiment 3 as an example, the manufacturing method thereof will be described by reference to the accompanying drawings.
First, for example, by using the technology described in Patent Literature 1, the single package PAC1 and the single package PAC2 are formed (S201 of
Subsequently, as shown in
Then, as shown in
Then, as shown in
Subsequently, as shown in
Then, as shown in
In the foregoing manner, the composite package CPAC3 can be manufactured. Then, the completed composite package CPAC3 is supplied to a customer, and is mounted in the housing cover of a three-phase motor, or the like on the part of the customer.
In Embodiment 5, as the single package PAC, there is used a double-side heat radiation type package in which the conductive member is exposed from the opposite sides of the sealing body MS, and which has been improved in heat radiation efficiency. A description will be given to a composite package CPAC5 including a plurality of the single packages PAC combined therein.
In Embodiment 5, using the double-side heat radiation type packages, the composite package CPAC5 is formed. Below, the configuration of the composite package CPAC5 in Embodiment 5 will be described by reference to the accompanying drawings.
The metal board MB is formed of a material with a good thermal conductivity such as an aluminum board or a copper board. In a region outside the region in which the single package PAC1 and the single package PAC2 are mounted of the region of the metal board MB, metal board fixing screw holes H1 are formed. The metal board fixing screw holes H1 are formed in the four corners of the metal board MB in the shape of a rectangle.
The insulation adhesion sheet IAS formed over the metal board MB includes, for example, a thermosetting resin. Specifically, the insulation adhesion sheet IAS is in a structure in which a base resin including a silicone resin or an epoxy resin is filled with a filler including ceramics such as aluminum oxide (Al2O3) or boron nitride or glass cloth.
The single package PAC1 and the single package PAC2 have the outward appearance structure described by reference to
Similarly, in the central part of the single package PAC2, the sealing body MS2 in the shape of generally a rectangle in plan view is formed. At the top of the sealing body MS2, there are provided the external coupling collector electrode CE2 and some of the signal electrodes SE2. Then, at the bottom of the sealing body MS2 opposite to the top thereof at which the external coupling collector electrode CE2 is formed, there are formed the external coupling emitter electrode EE2 and others of the signal electrodes SE2. Then, in the external coupling collector electrode CE2, a screw opening COP2 is formed. In the external coupling emitter electrode EE2, a screw opening EOP2 is formed.
In the composite package CPAC5 configured as described up to this point, at the top surface of the single package PAC1, the conductive member CP1 is exposed. At the top surface of the single package PAC2, the conductive member CP2 is exposed. Therefore, the heat generated inside the single package PAC1 is dissipated from the exposed conductive member CP1 with efficiency. The heat generated inside the single package PAC2 is dissipated from the exposed conductive member CP2 with efficiency. As a result, with the composite package CPAC5 in Embodiment 5, the heat radiation efficiency can be improved, and the stable operation can be ensured.
The composite package CPAC5 in Embodiment 5 is configured as described above. Below, a description will be given to the configuration of a composite package CPAC6 which is a modified example thereof.
Further,
Herein, the composite package CPAC6 which is the present modified example has a feature in that, as shown in
On the other hand, in the composite package CPAC5 shown in
The manufacturing method of the composite package CPAC5 in Embodiment 5 is the same as that in Embodiment 2, and hence a description thereon is omitted.
In Embodiment 6, as the single package PAC, there is used a double-side heat radiation type package in which the conductive member is exposed from the opposite sides of the sealing body MS, and which has been improved in heat radiation efficiency. A description will be given to a composite package CPAC7 including a plurality of the single packages PAC combined therein.
The metal board MB is formed of, for example, an aluminum board or a copper board. In the four corners thereof, the metal board fixing screw holes H1 are formed. Whereas, the insulation sheet IS1 and the insulation sheet IS2 are each in a structure in which a base resin including a silicone resin or an epoxy resin is filled with a filler including ceramics such as aluminum oxide (Al2O3) or boron nitride or glass cloth. Further, the pressing plate PP is desirably formed of, for example, stainless steel from the viewpoint of ensuring the pressing strength, and is desirably formed of, for example, copper from the viewpoint of ensuring favorable thermal conductivity.
The single package PAC1 and the single package PAC2 have the outward appearance structure described by reference to
Similarly, in the central part of the single package PAC2, the sealing body MS2 in the shape of generally a rectangle in plan view is formed. At the top of the sealing body MS2, there are provided the external coupling collector electrode CE2 and some of the signal electrodes SE2. Then, at the bottom of the sealing body MS2 opposite to the top thereof at which the external coupling collector electrode CE2 is formed, there are formed the external coupling emitter electrode EE2 and others of the signal electrodes SE2. Then, in the external coupling collector electrode CE2, a screw opening COP2 is formed. In the external coupling emitter electrode EE2, a screw opening EOP2 is formed.
Further, over the heat spreader HS, the semiconductor chip DCHP1 and the semiconductor chip CHP1 are mounted via the solder S1. Over the top surface of the semiconductor chip DCHP1 and the top surface of the semiconductor chip CHP1, a copper block BK is disposed via the solder S2. Over the copper block BK, the conductive member CP1 is formed via the solder S3. The surface of the conductive member CP1 is exposed from the surface of the sealing body MS1. Then, the conductive member CP1 is coupled with the external coupling emitter electrode EE1 including the screw opening EOP1 formed therein. At this step, in
Further, over the surface of the sealing body MS1 from which the surface of the conductive member CP1 is exposed, the insulation sheet IS2 is formed. Over the insulation sheet IS2, the pressing plate PP is formed. Herein, a description will be given to the reason why the pressing plate PP is not directly formed over the single package PAC1 and over the single package PAC2. In Embodiment 6, at the surface of the single package PAC1, the conductive member CP1 is exposed, and at the surface of the single package PAC2, the conductive member CP2 is exposed. Therefore, when the pressing plate PP including a metal is directly mounted over the single package PAC1 and the single package PAC2, a conduction between the exposed conductive member CP1 and conductive member CP2 is established via the pressing plate PP. For this reason, in Embodiment 6, over the single package PAC1 and over the single package PAC2, the insulation sheet IS2 is formed. Over the insulation sheet IS2, the pressing plate PP is mounted. This prevents a short circuit between the conductive member CP1 and the conductive member CP2.
Incidentally, in Embodiment 6, as with the insulation sheet IS1, the insulation sheet IS2 is also improved in selectivity. Therefore, for example, for a customer who places importance on the thermal conductivity (heat radiation characteristics), the insulation sheet IS2 with a high filling ratio of the filler FR is used; whereas, for a customer who places importance on the dielectric strength, the insulation sheet IS2 with a high content of the base resin BR is used.
In the composite package CPAC7 formed as described up to this point, at the top surface of the single package PAC1, the conductive member CP1 is exposed; and at the top surface of the single package PAC2, the conductive member CP2 is exposed. Therefore, the heat generated inside the single package PAC1 is dissipated from the exposed conductive member CP1 with efficiency. The heat generated inside the single package PAC2 is dissipated from the exposed conductive member CP2 with efficiency. As a result, with the composite package CPAC7 in Embodiment 6, the heat radiation efficiency can be improved, and the stable operation can be ensured.
The composite package CPAC7 in Embodiment 6 is configured as described above. Below, a description will be given to the configuration of a composite package CPAC8 which is a modified example thereof.
Whereas,
Herein, the composite package CPAC8 which is the present modified example has a feature in that, as shown in
On the other hand, in the composite package CPAC7 shown in
As described up to this point, the composite package CPAC7 in Embodiment 6 and the composite package CPAC8 in the modified example respectively have different advantages, but have the same basic structure. Therefore, in Embodiment 7, by taking the composite package CPAC7 in Embodiment 6 as an example, the manufacturing method thereof will be described by reference to the accompanying drawings.
First, for example, by using the technology described in Patent Literature 1, the single package PAC1 and the single package PAC2 are formed (S301 of
Subsequently, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Subsequently, as shown in
Then, as shown in
In the foregoing manner, the composite package CPAC7 can be manufactured. Then, the completed composite package CPAC7 is supplied to a customer, and is mounted in the housing cover of a three-phase motor, or the like on the part of the customer.
In Embodiment 8, a description will be given to a composite package CPAC9 including three single packages PAC mounted therein.
The metal board MB is formed of a material with a good thermal conductivity such as an aluminum board or a copper board. In a region outside the region including the single packages PAC1 to PAC3 mounted therein of the region of the metal board MB, the metal board fixing screw holes H1 are formed. The metal board fixing screw holes H1 are formed in the four corners of the metal board MB in the shape of a rectangle.
The insulation adhesion sheet IAS formed over the metal board MB includes, for example, a thermosetting resin. Specifically, the insulation adhesion sheet IAS is in a structure in which a base resin including a silicone resin or an epoxy resin is filled with a filler including ceramics such as aluminum oxide (Al2O3) or boron nitride or glass cloth.
The single packages PAC1 to PAC3 have the structure described by reference to
Similarly, in the central part of the single package PAC2, the sealing body MS2 in the shape of generally a rectangle in plan view is formed. At the top of the sealing body MS2, there are provided the external coupling collector electrode CE2 and some of the signal electrodes SE2. Then, at the bottom of the sealing body MS2 opposite to the top thereof at which the external coupling collector electrode CE2 is formed, there are formed the external coupling emitter electrode EE2 and others of the signal electrodes SE2. Then, in the external coupling collector electrode CE2, a screw opening COP2 is formed. In the external coupling emitter electrode EE2, a screw opening EOP2 is formed.
Further, in the central part of the single package PAC3, the sealing body MS3 in the shape of generally a rectangle in plan view is formed. At the top of the sealing body MS3, there are provided the external coupling collector electrode CE3 and some of the signal electrodes SE3. Then, at the bottom of the sealing body MS2 opposite to the top thereof at which the external coupling collector electrode CE3 is formed, there are formed the external coupling emitter electrode EE3 and others of the signal electrodes SE3. Then, in the external coupling collector electrode CE3, a screw opening COPS is formed. In the external coupling emitter electrode EE3, a screw opening EOP3 is formed.
The thus formed composite package CPAC9 has a feature in that over the metal board MB, the single packages PAC1 to PAC3 are mounted together to form one composite package CPAC9. As a result, as compared with the case where six single packages are mounted, the number of packages to be mounted becomes smaller in the case where two composite packages CPAC9 are mounted. This can reduce the mounting burden on the part of a customer. Namely, when the single packages are mounted on the part of a customer, one three-phase motor requires mounting of six single packages therein. However, when the composite packages CPAC9 are mounted on the part of a customer, one three-phase motor requires mounting of only two composite packages CPAC9. Therefore, by supplying the composite packages CPAC9 to a customer, it is possible to obtain an effect of allowing a large reduction of the mounting burden on the part of the customer.
Further, the composite package CPAC9 in Embodiment 8 has a feature in that the directions of mounting of the single packages PAC1 to PAC3 mounted over the metal board MB are the same. In other words, as shown in
For example, the single packages PAC1 to PAC3 to be mounted in a first composite package CPAC9 can be each configured as a package including the IGBT 4 and the diode 5 sealed therein to be coupled between the power supply potential (Vcc) and the three-phase motor shown in
As indicated from
Therefore, the single packages PAC1 to PAC3 are disposed such that the external coupling collector electrodes CE1 to CE3 of the single packages PAC1 to PAC3 are disposed on the side of the same side of the metal board MB. In other words, the single packages PAC1 to PAC3 are disposed such that the external coupling emitter electrodes EE1 to EE3 of the single packages PAC1 to PAC3 are disposed on the side of the same side of the metal board MB. This facilitates coupling of the external coupling collector electrodes CE1 to CE3 of the single packages PAC1 to PAC3 in mounting on the part of a customer. In other words, the composite package CPAC9 in Embodiment 8 has an advantage in that unification of directions of mounting of the single packages PAC1 to PAC3 mounted over the metal board MB facilitates the mounting layout on the part of a customer.
The composite package CPAC9 in Embodiment 8 is configured as described above. The manufacturing method thereof is the same as that in Embodiment 2. Incidentally, for the composite package CPAC9 in Embodiment 8, a description was given to the example in which using the insulation adhesion sheet IAS, the single packages PAC1 to PAC3 are mounted over the metal board MB. However, for example, as in Embodiment 3, using the pressing plate PP, the single packages PAC1 to PAC3 may be fixed to the top of the metal board MB.
In Embodiment 9, a description will be given to a composite package CPAC10 including six single packages PAC mounted therein.
The metal board MB is formed of a material with a good thermal conductivity such as an aluminum board or a copper board. In a region outside the region including the single packages PAC1 to PAC6 mounted therein of the region of the metal board MB, the metal board fixing screw holes H1 are formed. The metal board fixing screw holes H1 are formed along the sides of the metal board MB in the shape of a rectangle.
The insulation adhesion sheet IAS1 and the insulation adhesion sheet IAS2 formed over the metal board MB include, for example, a thermosetting resin. Specifically, the insulation adhesion sheet IAS1 and the insulation adhesion sheet IAS2 are each in a structure in which a base resin including a silicone resin or an epoxy resin is filled with a filler including ceramics such as aluminum oxide (Al2O3) or boron nitride or glass cloth.
The single packages PAC1 to PAC6 each have the structure described with reference to
The thus formed composite package CPAC10 has a feature in that, over the metal board MB, the single packages PAC1 to PAC6 are mounted together to form one composite package CPAC10. As a result, as compared with the case where six single packages are mounted, the number of packages to be mounted becomes smaller in the case where one composite package CPAC10 is mounted. This can reduce the mounting burden on the part of a customer. Namely, when the single packages are mounted on the part of a customer, one three-phase motor requires mounting of six single packages therein. However, when the composite package CPAC10 is mounted on the part of a customer, one three-phase motor requires mounting of only one composite package CPAC10. Therefore, by supplying the composite package CPAC10 to a customer, it is possible to obtain an effect of allowing a large reduction of the mounting burden on the part of a customer.
The composite package CPAC10 in Embodiment 9 is configured as described above. The manufacturing method thereof is the same as that in Embodiment 2. Incidentally, for the composite package CPAC10 in Embodiment 9, a description was given to the example in which using the insulation adhesion sheet IAS1 and the insulation adhesion sheet IAS2, the single packages PAC1 to PAC6 are mounted over the metal board MB. However, for example, as in Embodiment 3, using the pressing plate PP, the single packages PAC1 to PAC6 may be fixed to the top of the metal board MB.
In Embodiment 10, a description will be given to a mounting example in which, on the part of a customer, composite packages are mounted to form a power semiconductor device controlling a three-phase motor.
Then,
Subsequently,
Then, a description will be given to the cross-sectional structure of a structure including the composite package CPAC1 shown in
Over the radiating fin FIN, the composite package CPAC1 is mounted via the grease GRC. Specifically, over the grease GRC, the metal board MB is disposed. Over the surface of the metal board MB, the insulation layer IL is formed. Over the insulation layer IL, the insulation adhesion sheet IAS is formed. Over the insulation adhesion sheet IAS, the sealing body MS1 is disposed. The insulation adhesion sheet IAS is in contact with the heat spreader HS exposed from the back surface of the sealing body MS1.
The heat spreader HS is coupled with the external coupling collector electrode CE1. The external coupling collector electrode CE1 is fixed to a bus bar BB1 by a screw SRW1. The bus bar BB1 is coupled with the collector wire C (Vcc) shown in
Further, from the sealing body MS1, the signal electrodes SE1 protrude upwardly. The signal electrodes SE1 are inserted into the control board CB disposed above the composite package CPAC1, and coupled with the control board CB by solder or the like. The signal electrodes SE1 include, for example, the external coupling gate electrode GE, the temperature detecting electrodes TE1 and TE2, the current detecting electrode IE, or the Kelvin detecting electrodes KE1 and KE2. The signal electrodes SE1 are coupled with the control circuit, the current detecting circuit, the temperature detecting circuit, and the Kelvin detecting circuit, mounted over the control board CB. As described up to this point, the power semiconductor device 2 shown in
Up to this point, the invention made by the present inventors was specifically described by way of embodiments thereof. However, the present invention is not limited to the embodiments. It is naturally understood that various changes may be made within the scope not departing from the gist thereof.
In Embodiments 1 to 10, a description was given to the examples in which IGBTs were used as switching elements. However, as the switching elements, power MISFETs (Metal Insulator Semiconductor Field Effect Transistors) can also be used. In this case, the external coupling collector electrode of the package functions as an external coupling drain electrode, and the external coupling emitter electrode functions as an external coupling source electrode.
The present invention can be widely used for manufacturers manufacturing semiconductor devices.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2009-240806 | Oct 2009 | JP | national |
