Claims
- 1. A semiconductor device comprising:a semiconductor chip having electrodes; an interconnect layer connected to said electrodes; a conducting layer formed on said interconnect layer, avoiding an overlap with said electrodes when a view is taken in a direction perpendicular to a surface of said semiconductor chip on which said electrodes are provided; an underlying metal layer formed on said conducting layer, said underlying metal layer having a size larger than a peripheral outline of said conducting layer when said view is taken; a bump formed on said underlying metal layer; and a resin layer formed around said conducting layer.
- 2. The semiconductor device as defined in claim 1 wherein:said bump is formed having a size larger than the peripheral outline of said conducting layer; and an area of a region in which said bump contacts with said underlying metal layer is larger than an area of a region in which said underlying metal layer contacts with said conducting layer.
- 3. The semiconductor device as defined in claim 1,wherein said resin layer contacts at least a portion of a lower surface of said underlying metal layer.
- 4. The semiconductor device as defined in claim 2,wherein said resin layer contacts at least a portion of a lower surface of said underlying metal layer.
- 5. The semiconductor device as defined in claim 1,wherein said resin layer is formed being separated from a lower surface of said underlying metal layer.
- 6. The semiconductor device as defined in claim 2,wherein said resin layer is formed being separated from a lower surface of said underlying metal layer.
- 7. The semiconductor device as defined in claim 1,wherein an adhesive is provided between the lower surface of said underlying metal layer and said resin layer.
- 8. The semiconductor device as defined in claim 1,wherein said conducting layer has a height approximately in a range 12 to 300 μm, and a diameter approximately in a range 20 to 100 μm.
- 9. The semiconductor device as defined in claim 7,wherein sa id conducting layer has a height approximately in a range 12 to 300 μm, and a diameter approximately in a range 20 to 100 μm.
- 10. A circuit board on which is mounted the semiconductor device as defined in claim 1.
- 11. A circuit board on which is mounted the semiconductor device as defined in claim 7.
- 12. A circuit board on which is mounted the semiconductor device as defined in claim 8.
- 13. A circuit board on which is mounted the semiconductor device as defined in claim 9.
- 14. An electronic instrument equipped with the semiconductor device as defined in claim 1.
- 15. An electronic instrument equipped with the semiconductor device as defined in claim 7.
- 16. An electronic instrument equipped with the semiconductor device as defined in claim 8.
- 17. An electronic instrument equipped with the semiconductor device as defined in claim 9.
- 18. The semiconductor device as defined in claim 1, wherein said underlying metal layer has a first surface in contact with said bump and a second surface opposite to said first surface, an area of said second surface being smaller than an area of said first surface.
- 19. A semiconductor device comprising:a semiconductor chip having electrodes; an interconnect layer connected to said electrodes; a conducting layer formed on said interconnect layer, avoiding an overlap with said electrodes when a view is taken in a direction perpendicular to a surface of said semiconductor chip on which said electrodes are provided; a bump electrically connected to said conducting layer; and a resin layer formed around said conducting layer, wherein an air space is formed between said resin layer and said bump.
- 20. The semiconductor device as defined in claim 19, wherein said conducting layer is exposed to said air space.
- 21. The semiconductor device as defined in claim 19, wherein said resin layer covers said conducting layer.
- 22. A circuit board on which is mounted the semiconductor device as defined in claim 19.
- 23. An electronic instrument equipped with the semiconductor device as defined in claim 19.
- 24. A semiconductor device comprising:a semiconductor chip having electrodes; an interconnect layer connected to said electrodes; a bump electrically connected to said interconnect layer with at least one conducting layer, avoiding an overlap with said electrodes when a view is taken in a direction perpendicular to a surface of said semiconductor chip on which said electrodes are provided; and a resin layer formed between said bump and said surface of said semiconductor chip on which said electrodes are provided.
- 25. The semiconductor device as defined in claim 24, further comprising a metal layer in contact with said bump, said metal layer provided on said conducting layer.
- 26. The semiconductor device as defined in claim 25, wherein said metal layer is formed from a material which is more easily deformed than said conducting layer.
- 27. The semiconductor device as defined in claim 24, wherein said resin layer having contact with at least part of said interconnect layer.
- 28. A circuit board on which is mounted the semiconductor device as defined in claim 24.
- 29. An electronic instrument equipped with the semiconductor device as defined in claim 24.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-082265 |
Mar 1998 |
JP |
|
Parent Case Info
This is a Continuation of application Ser. No. 09/424,484 filed Nov. 23, 1999 now U.S. Pat. No. 6,001,006. The entire disclosure of the prior application(s) is hereby incorporated by reference herein in its entirety.
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Continuations (1)
|
Number |
Date |
Country |
Parent |
09/424484 |
|
US |
Child |
09/729959 |
|
US |