Semiconductor device having sealed electrical feedthrough

Abstract

A method of hermetically sealing an electrical feedthrough (5) in a semiconductor-on-insulator device comprising the steps of producing an electrically insulating layer (2) on a semiconductive material (1) having a first surface area, producing one or more electrodes (4) on a non-conductive substrate (3) of a second surface area which may be greater than the first surface area, with each electrode having an electrical feedthrough (5) associated therewith, placing the semiconductive layer on the substrate with the insulating layer in contact with the substrate and such that each electrical feedthrough extends beyond the edge of the semiconductive layer, and bonding the semiconductive layer to the substrate to provide an hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith and disposed between the semiconductive layer and the substrate.

Description

Claims

1. A semiconductor-on-insulator device having a hermetically sealed electrical feedthrough, constructed by:

(a) producing an electrically insulating layer on a layer of a semiconductor material having a first surface area defined by a respective peripheral edge of the semiconductive layer;

(b) producing one or more electrodes on a nonconductive substrate having a second surface area less than that of the first surface area of the semiconductive material and defined by a respective peripheral edge, with each electrode having an electrical feedthrough associated therewith at least partly on the nonconductive substrate;

(c) providing a feedthrough extension on said insulating layer of said semiconductive layer, said feedthrough extension being for overlapping alignment with a respective feedthrough on said nonconductive substrate;

(d) placing the semiconductive layer on the substrate, with the insulating layer in contact with the substrate and such that said feedthrough extension is in overlapping alignment with a respective said feedthrough on said substrate such that each electrical fedthrough including said feedthrough extension extends beyond a respective said peripheral edge of the substrate; and

(e) bonding the semiconductive layer via the insulating layer thereon to the substrate to provide a hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith between the semiconductive layer and the substrate, said feedthrough and feedthrough extension also being physically bonded together during said bonding of the semiconductive layer to the nonconductive substrate.

2. A semiconductor-on-insulator sensor having a hermetically sealed electrical feedthrough, comprising:

a layer of semiconductive material having a first surface area defined by a respective peripheral edge of the semiconductive layer and having an electrically insulating layer thereon;

a nonconductive substrate having a second surface area less than that of the first surface area and defined by a respective peripheral edge;

at least one electrode formed on said nonconductive substrate, each said electrode having an electrical feedthrough associated therewith at least partly on the nonconductive substrate;

each said electrical feedthrough including a respective feedthrough extension formed on said insulating layer of said semiconductor and being in overlapping alignment with and bonded to said respective feedthrough;

the insulating layer on said layer of semiconductive material being in contact with and having a bond to and with said substrate such that each said electrical feedthrough including said feedthrough extension thereby bonded thereto extends beyond a respective said peripheral edge of the substrate, said bond between said insulating layer on said semiconductive layer and said nonconductive substrate being such as to provide a hermetic seal between said semiconductor layer and said nonconductive substrate and around each said electrical feedthrough associated with a respective said electrode.

3. The semiconductor-on-insulator sensor of claim 2 wherein said insulating layer is approximately 450 nanometers thick, and each said electrode and associated feedthrough is approximately 40 nanometers thick.

4. A semiconductor-on-insulator sensor having a hermetically sealed electrical feedthrough, comprising:

a layer of semiconductive silicon having a first surface area defined by a respective peripheral edge of the semiconductive layer and having an electrically insulating layer of silicon dioxide of silicon nitride thereon;

a nonconductive substrate of glass having a second surface area different from that of the first surface area and defined by a respective peripheral edge;

at least one electrode formed on said nonconductive substrate, each said electrode having an electrical feedthrough associated therewith at least partly on the nonconductive substrate, each said electrode and associated feedthrough being of two-layer construction having a base layer of nickel chromium directly on said glass nonconductive substrate and a second layer of gold thereupon;

the insulating layer on said layer of semiconductive material being in contact with and having a bond to and with said substrate such that each said electrical feedthrough extends beyond a respective said peripheral edge of the semiconductive layer or substrate, said bond between said insulating layer on said semiconductive layer and said nonconductive substrate being a thermo-compression bond such s to provide a hermetic seal between said semiconductive layer and said nonconductive substrate and around each said electrical feedthrough associated with a respective said electrode; and

wherein the semiconductive layer is etched at its surface facing the nonconductive substrate to define a cavity therebetween and such that said semiconductive layer serves as a pressure responsive diaphragm.