SEMICONDUCTOR DEVICE

Abstract

Provided is a semiconductor device including a bonding layer made from sintered material and having a configuration capable of avoiding a variation in life span. The semiconductor device includes a conductive plate having a main surface, a semiconductor chip deposited to be opposed to the main surface of the conductive plate, and a bonding layer including porous sintered material and arranged between the conductive plate and the semiconductor chip, wherein a first outer edge of a bonding interface between the bonding layer and the conductive plate is located on the inside of an outer circumference of the semiconductor chip and is located on the inside of a second outer edge of a bonding interface between the bonding layer and the semiconductor chip.

Description

TECHNICAL FIELD

The present invention relates to a semiconductor device (a semiconductor module) equipped with power semiconductor chips.

BACKGROUND ART

Power semiconductor chips (hereinafter, referred to simply as “semiconductor chips”) are typically used as switching elements for power conversion. A semiconductor module equipped with such a power semiconductor chip has a structure in which the semiconductor chip is bonded onto an insulated circuit substrate via a bonding layer made from solder. Research and development of bonding technology that uses sintered material including metal particles such as silver (Ag) for bonding layers have grown recent years in order to achieve high heat resistance, high heat-releasing performance, and high reliability.

JP 2015-153966 A, JP 2015-95540 A and WO 2012/121355 A1 each disclose a sintered-material layer having bonding interfaces with a conductive plate and a semiconductor chip, in which an outer circumference of the respective bonding interfaces is located on the inside of the outer circumference of the semiconductor chip in a plan view. JP 2015-216160 A discloses a power semiconductor device configured to include a metallic sintered body having a lower porosity at a position close to a lateral side of a power semiconductor element than at a position close to the middle of the power semiconductor element. WO 2014/129626 A1 discloses a connection structure in which a ratio of a porosity of an intermediate portion in the thickness direction of an outer peripheral side part of a region further towards the outside than a cross-section part formed at a position of a distance equivalent to the thickness of the porous metal layer from the side surface of the porous metal layer toward the inside, to the porosity of a center side after having excluded the outer peripheral side part, falls within a range of 1.10 to 1.60.

JP 2015-177182 A discloses a power module including a part corresponding to a circumferential edge of a semiconductor element having a structure bonded via bonding material with a low Young’s modulus and a middle part having a structure bonded via sintered-metal bonding material, in which the material at the circumferential edge is substantially the same as the sintered-metal bonding material used in the middle part of the semiconductor element, but includes metal material having a smaller density than that used in the middle part of the semiconductor element. JP 2012-9703 A discloses a structure including a first sintered pattern, a second sintered pattern, and third metallic particle paste, in which the second sintered pattern, the third metallic particle paste, and the first sintered pattern are arranged in this order between a substrate and a semiconductor element, and are heated to be bonded together.

US 10535628 B2 discloses a method of printing sintered paste onto a substrate or on a bottom surface of a die. JP 6399906 B2 discloses a bonding layer including a first bonding layer provided on the inside of an edge of a semiconductor element, and a second bonding layer provided on the inside of the edge of the semiconductor element and on the outside of the first bonding layer, in which the second bonding layer is made from sintered-metal bonding material having a smaller particle diameter than that used in the first bonding layer.

SUMMARY OF THE INVENTION

Technical Problem

The conventional semiconductor modules as described above using the bonding layer that is made from solder is damaged because of deterioration of the bonding layer in association with an increase in heat resistance, and thus have a short but stable life span.

While the bonding layer made from sintered material used for the semiconductor modules has the characteristics having relatively high resistance to deterioration, the semiconductor modules using such a boding layer tend to be damaged suddenly because other parts deteriorate earlier than the bonding layer. The semiconductor modules using the bonding layer made from the sintered material thus have a longer life span than the semiconductor modules using the bonding layer made from solder, but have a problem with a variation in the life span.

In view of the foregoing problems, the present invention provides a semiconductor device including a bonding layer made from sintered material with a configuration capable of avoiding a variation in life span.

Solution to Problem

An aspect of the present invention inheres in a semiconductor device including: a conductive plate having a main surface; a semiconductor chip deposited to be opposed to the main surface of the conductive plate; and a bonding layer including porous sintered material and arranged between the conductive plate and the semiconductor chip, wherein a first outer edge of a bonding interface between the bonding layer and the conductive plate is located on an inside of an outer circumference of the semiconductor chip and is located on an inside of a second outer edge of a bonding interface between the bonding layer and the semiconductor chip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a semiconductor device according to a first embodiment;

FIG. 2 is a plan view illustrating the semiconductor device according to the first embodiment;

FIG. 3 is a cross-sectional view as viewed from direction A-A in FIG. 2;

FIG. 4 is a cross-sectional view illustrating a semiconductor device of a comparative example;

FIG. 5 is a cross-sectional image of the semiconductor device of the comparative example at an early stage;

FIG. 6 is a cross-sectional image of the semiconductor device of the comparative example after an execution of a test for reliability;

FIG. 7 is a cross-sectional image of the semiconductor device according to the first embodiment at an early stage;

FIG. 8 is a cross-sectional image of the semiconductor device according to the first embodiment after an execution of a test for reliability;

FIG. 9 is a schematic view illustrating a method of manufacturing the semiconductor device according to the first embodiment;

FIG. 10 is a schematic view continued from FIG. 9, illustrating the method of manufacturing the semiconductor device according to the first embodiment;

FIG. 11 is a schematic view continued from FIG. 10, illustrating the method of manufacturing the semiconductor device according to the first embodiment;

FIG. 12 is a schematic view continued from FIG. 11 illustrating the method of manufacturing the semiconductor device according to the first embodiment;

FIG. 13 is a schematic view continued from FIG. 12 illustrating the method of manufacturing the semiconductor device according to the first embodiment;

FIG. 14 is a cross-sectional view illustrating a semiconductor device according to a second embodiment;

FIG. 15 is a cross-sectional view illustrating a semiconductor device according to a third embodiment;

FIG. 16 is a cross-sectional view illustrating a semiconductor device according to a fourth embodiment;

FIG. 17 is a schematic view illustrating a method of manufacturing the semiconductor device according to the fourth embodiment;

FIG. 18 is a schematic view continued from FIG. 17, illustrating the method of manufacturing the semiconductor device according to the fourth embodiment; and

FIG. 19 is a schematic view continued from FIG. 18, illustrating the method of manufacturing the semiconductor device according to the fourth embodiment.

DETAILED DESCRIPTION

With reference to the drawings, first to fourth embodiments of the present invention will be described below.

In the drawings, the same or similar elements are indicated by the same or similar reference numerals. The drawings are schematic, and it should be noted that the relationship between thickness and planer dimensions, the thickness proportion of each layer, and the like are different from real ones. Moreover, in some drawings, portions are illustrated with different dimensional relationships and proportions. The first to fourth embodiments described below merely illustrate schematically devices and methods for specifying and giving shapes to the technical idea of the present invention, and the span of the technical idea is not limited to materials, shapes, structures, and relative positions of elements described herein.

Additionally, definitions of directions such as upper and lower in the following description are simply definitions for convenience of description, and do not limit the technological concept of the present invention. For example, when observing an object rotated by 90 degrees, the upper and lower are converted to left and right to be read, and when observing an object rotated by 180 degrees, the upper and lower are read reversed, which should go without saying.

First Embodiment

As illustrated in FIG. 1, a semiconductor device (a semiconductor module) according to a first embodiment includes an insulated circuit substrate 1, a semiconductor chip 3 deposited to be opposed to the main surface (the top surface) of the insulated circuit substrate 1, and a bonding layer 2a including porous sintered material and arranged between the insulated circuit substrate 1 and the semiconductor chip 3.

The insulated circuit substrate 1 may be a direct copper bonded (DCB) substrate or an active metal brazed (AMB) substrate, for example. The insulated circuit substrate 1 includes an insulating plate 10, conductive plates (circuit plates) 11a and 11b deposited on the top surface of the insulating plate 10, and a conductive plate (a heat-releasing plate) 12 deposited on the bottom surface of the insulating plate 10. The insulating plate 10 is a ceramic substrate made from aluminum oxide (Al₂O₃), aluminum nitride (AlN), or silicon nitride (Si₃N₄), or a resin insulating substrate including polymer material, for example. The conductive plates 11a and 11b and the conductive plate 12 are each conductor foil of metal such as copper (Cu) and aluminum (Al), for example.

The sintered material included in the bonding layer 2a as used herein can be metallic particle paste (conductive paste) in which metal particles such as gold (Au), silver (Ag), or copper (Cu) are dispersed in an organic component so as to be in a paste state, or bonding material in a sheet state containing metal particles, and is obtained by sintering of these kinds of material. The metal particles have a fine particle diameter of about several nanometers to several micrometers. The use of the silver (Ag)-based sintered material, which can be bonded at a low temperature and led to have the same fusing point as Ag after the bonding, can provide a bonding layer having high heat resistance and high reliability with no necessity of increasing the temperature.

The semiconductor chip 3 is deposited to be opposed to the main surface (the top surface) of the conductive plate 11a. The semiconductor chip 3 to be used can be an insulated gate bipolar transistor (IGBT), a field-effect transistor (FET), a static induction (SI) thyristor, a gate turn-off (GTO) thyristor, or a freewheeling diode (FWD), for example. The semiconductor chip 3 may be a silicon (Si) substrate, or may be a compound semiconductor substrate of a wide-bandgap semiconductor made from silicon carbide (SiC), gallium nitride (GaN), or gallium oxide (Ga₂O₃), for example. A bottom-surface electrode made from gold (Au) or the like in the semiconductor chip 3 is bonded to the conductive plate 11a via the bonding layer 2a. While FIG. 1 illustrates the case of including the single semiconductor chip 3, the number of the semiconductor chips can be determined as appropriate depending on a current capacity of the semiconductor module, for example, and the semiconductor module may include two or more semiconductor chips.

A case 5 made from insulating material such as resin is provided to cover the outer circumference of the insulated circuit substrate 1 and the semiconductor chip 3. The case 5 is filled with a sealing member 7 for sealing the bonding layer 2a and the semiconductor chip 3. The sealing member 7 as used herein can be made from insulating material such as silicone gel or thermosetting resin, for example. External terminals 4a and 4b are fixed to the case 5. The semiconductor chip 3, the conductive plates 11a and 11b, and the external terminals 4a and 4b are electrically connected to each other via bonding wires 6a, 6b, and 6c.

A heat-releasing base 8 made from metal such as copper (Cu) is provided on the bottom surface side of the insulated circuit substrate 1 via a bonding layer 2b. A heat-releasing fin 9 made from metal such as copper (Cu) is provided on the bottom surface side of the heat-releasing base 8 via a bonding layer 2c. The bonding layers 2b and 2c as used herein can be made from sintered material, solder, or thermal interface material (TIM), for example. The respective bonding layers 2b and 2c may be made from the same material as the bonding layer 2a, or may be made from material different from that of the bonding layer 2a.

FIG. 2 is a plan view illustrating the conductive plate 11a of the insulated circuit substrate 1 and the semiconductor chip 3 illustrated in FIG. 1. As illustrated in FIG. 2, the semiconductor chip 3 has a rectangular planar pattern. The semiconductor chip 3 has a size of about 5 millimeters × 5 millimeters, for example, but is not limited to this size. The bonding layer 2a has a rectangular planar pattern. The outer edge of the bonding layer 2a on the top surface side (toward the semiconductor chip 3) is located on the outside of the outer circumference of the semiconductor chip 3. The outer edge of the bonding layer 2a on the top surface side (toward the semiconductor chip 3) may conform to the outer circumference of the semiconductor chip 3, or may be located on the inside of the outer circumference of the semiconductor chip 3.

FIG. 3 is a cross-sectional view taken along the diagonal line of the semiconductor chip 3 as viewed from direction A-A in FIG. 2. As illustrated in FIG. 3, the bonding layer 2a has a substantially trapezoidal shape (a tapered shape) in cross section having a longer length at the upper base on the top surface side (toward the semiconductor chip 3) than at the lower base on the bottom surface side (toward the conductive plate 1a). While FIG. 3 illustrates the case in which the respective side surfaces of the bonding layer 2a are flat surfaces, the side surfaces of the bonding layer 2a may be convex either to the outside or to the inside. For example, the respective surfaces of the bonding layer 2a toward the conductive plate 11a may be convex toward the conductive plate 11a on the outside of the outer edge of a bonding interface 21 between the bonding layer 2a and the conductive plate 11a. The outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a has a point at which three of the bonding layer 2a, the conductive plate 11a, and the sealing member 7 overlap with each other. A width W1 of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is narrower than a width W2 of a bonding interface 22 between the bonding layer 2a and the semiconductor chip 3. The outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3 conforms to the outer circumference of the semiconductor chip 3. FIG. 2 schematically indicates the bonding interface 21 between the bonding layer 2a and the conductive plate 11 by the broken line.

As illustrated in FIG. 1 to FIG. 3, the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is located on the inside of the outer circumference of the semiconductor chip 3 and is located on the inside of the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3. This configuration provides stress-concentrated portions P1 and P2 at the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a. The stress-concentrated portions P1 and P2 typically cause cracks that tend to gradually proceed toward the middle of the bonding layer 2a to increase thermal resistance, causing damage to the semiconductor device. The stress-concentrated portions P1 and P2 correspond to the positions at the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a (indicated by the broken line) illustrated in the planar pattern in FIG. 2, and tend to easily cause cracks particularly starting from the four corners of the rectangular pattern defined by the bonding interface 21.

Namely, the semiconductor device according to the first embodiment, which has the configuration in which the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is located on the inside of the outer circumference of the semiconductor chip 3 and is located on the inside of the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3, provides the stress-concentrated portions P1 and P2 at the outer edge of the bonding interface 21 so as to positively cause cracks starting from the stress-concentrated portions P1 and P2. This configuration enables the rate limiting of the life span in the bonding layer 2a to intentionally lead to damage to the semiconductor device, so as to avoid a variation in the life span of semiconductor devices to be manufactured.

A distance D1 between the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a and the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3 is in a range of about 5 micrometers or greater and 50 micrometers or less, for example, but is not limited to this range. A thickness T1 of the bonding layer 2a is in a range of about 10 micrometers or greater and 50 micrometers or less for example, but is not limited to this range. The distance D1 is about 1/2500 or greater and 1/50 or less of the length of the diagonal line of the semiconductor chip 3 in the planar pattern, and is about 1/1250 or greater and 1/50 or less of the thickness T1 of the bonding layer 2a, but is not limited to this case and can be adjusted as appropriate depending on the type of the bonding layer 2a, the thickness T1 of the bonding layer 2a, and the size of the semiconductor chip 3, for example.

The stress concentrated on the stress-concentrated portions P1 and P2 increases as the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is located further on the inside of the semiconductor chip 3 so as to increase the distance D1, and cracks starting from the stress-concentrated portions P1 and P2 thus tend to be caused more easily. The adjustment of the distance D1 therefore can regulate the cause of cracks starting from the stress-concentrated portions P1 and P2, and can control the life span of the semiconductor device accordingly.

The outer edge of the bonding layer 2a on the top surface side (toward the semiconductor chip 3) projects to the outside by a distance D2 from the outer circumference of the semiconductor chip 3. The distance D2 is in a range of about 1 micrometer or greater and 30 micrometers or less, but is not limited to this range. The part of the bonding layer 2a projecting to the outside from the outer circumference of the semiconductor chip 3 is not necessarily provided. For example, the part of the bonding layer 2a projecting to the outside from the outer circumference of the semiconductor chip 3 may be removed by air blowing or washing, for example, after the execution of sintering of the bonding layer 2a. In such a case, the outer edge of the bonding layer 2a on the top surface side (toward the semiconductor chip 3) may conform to the outer circumference of the semiconductor chip 3, or may be located on the inside of the outer circumference of the semiconductor chip 3.

The sintered material included in the bonding layer 2a is porous and has pores (holes) between the metal particles. A porosity between the metal particles in a region of the bonding layer 2a located on the inside of the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is higher than a porosity between the metal particles in a region of the bonding layer 2a located on the inside of the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3 and located on the outside of the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a. The part of the bonding layer 2a located on the inside of the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a tends to cause cracks more easily than the part of the bonding layer 2a located on the inside of the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3 and located on the outer side of the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a, and the cracks caused tend to easily advance, so as to promote destruction of the semiconductor device accordingly.

Comparative Example

A semiconductor device of a comparative example is described below. As illustrated in FIG. 4, the semiconductor device of the comparative example differs from the semiconductor device according to the first embodiment illustrated in FIG. 3 in that the outer circumference of a bonding layer 2d made from sintered material on the bottom surface side (toward the conductive plate 11a) is located on the outside of the outer circumference of the semiconductor chip 3, and the bonding layer 2d is in contact with the lower parts of the side surfaces of the semiconductor chip 3 so as to have side surfaces widened toward the bottom.

The semiconductor device of the comparative example including the bonding layer 2d made from the sintered material has a longer life span than the case of including the bonding layer made from solder. However, the bonding layer 2d, which has high heat resistance and high reliability, cannot serve as a member contributing to the rate limiting of the life span, and the semiconductor device thus may be suddenly damaged because of breakage of the member such as the semiconductor chip 3 and the insulated circuit substrate 1 other than the bonding layer 2d. This leads the semiconductor device of the comparative example to cause a variation in the life span, which could further lead to serious malfunction. In view of this, a preferable malfunction mode is a state in which the semiconductor device is damaged due to a gradual promotion of deterioration (cracks) in the bonding layer and due to an increase in thermal resistance, for example, as in the case of the bonding layer made from solder.

In contrast, the semiconductor device according to the first embodiment, which has the configuration in which the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is located on the inside of the outer circumference of the semiconductor chip 3 and is located on the inside of the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3, can positively cause cracks starting from the stress-concentrated portions P1 and P2 of the bonding layer 2a, so as to enable the rate limiting of the life span in the bonding layer 2a. This configuration leads the semiconductor device according to the first embodiment to have a shorter life span than the semiconductor device of the comparative example, but can avoid a variation in the life span of the semiconductor device and allow a relatively long life span as compared with the case of the bonding layer made from solder.

Further, since the width W2 of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3 is greater than the width W1 between the respective outer edges of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a, the heat transmitted from the semiconductor chip 3 can be efficiently released, and the damage to the end parts of the semiconductor chip 3 thus can be avoided.

Example

The semiconductor device according to the first embodiment as illustrated in FIG. 3 and the semiconductor device of the comparative example as illustrated in FIG. 4 were manufactured so as to be subjected to a power cycle test. FIG. 5 is a cross-sectional image of the semiconductor device of the comparative example before the execution of the power cycle test, and FIG. 6 is a cross-sectional image of the semiconductor device of the comparative example after the execution of the power cycle test. As shown in FIG. 6, any deterioration (cracks) was not confirmed in the bonding layer 2d of the semiconductor device of the comparative example after the power cycle test, but the semiconductor device was damaged because of a deterioration in other parts excluding the bonding layer 2d.

FIG. 7 is a cross-sectional image of the semiconductor device according to the first embodiment before the execution of the power cycle test, and FIG. 8 is a cross-sectional image of the semiconductor device according to the first embodiment after the execution of the power cycle test. As shown in FIG. 8, cracks were caused at the stress-concentrated portion P1 of the bonding layer 2a of the semiconductor device according to the first embodiment after the execution of the power cycle test, and the cracks gradually proceeded toward the center of the bonding layer 2a, which damaged the semiconductor device in association with an increase in thermal resistance.

Method of Manufacturing Semiconductor Device

A method of manufacturing (assembling) the semiconductor device according to the first embodiment is described below with reference to FIG. 9 to FIG. 12. First, as illustrated in FIG. 9, a rubber sheet 32 is placed on the top surface of a base 31, and a sintered sheet 2 that is a sheet-like sintered material is further placed on the top surface of the rubber sheet 32. The semiconductor chip 3 is then led to be stuck to a sticking part 34 of a mounter head 33 so that the bottom surface of the semiconductor chip 3 is opposed to the top surface of the sintered sheet 2.

Next, as illustrated in FIG. 10, the mounter head 33 is led to go down so as to push the bottom surface of the semiconductor chip 3 against the sintered sheet 2. This step causes the stress to be concentrated on the edges of the bottom surface of the semiconductor chip 3, so as to press a part of the sintered sheet 2 on the edge side of the bottom surface of the semiconductor chip 3 to decrease the thickness of the sintered sheet 2 more at the part on the edge side of the bottom surface of the semiconductor chip 3 than at the part corresponding to the middle of the bottom surface of the semiconductor chip 3. The sintered sheet 2 thus has a lower porosity in the relatively-thin part on the edge side than in the relatively-thick part in the middle. The step of pushing the bottom surface of the semiconductor chip 3 against the sintered sheet 2 may include heat treatment and pressing treatment executed simultaneously at this point so as to facilitate the step of transferring the sintered sheet 2.

Next, as illustrated in FIG. 11, the mounter head 33 is led to be lifted up so that a part of the sintered sheet 2 is cut off and the bonding layer 2a as a part of the sintered sheet 2 is transferred to the bottom surface of the semiconductor chip 3. The bonding layer 2a has a thickness that is relatively thick in the middle and is relatively thin on the edge side.

Next, the insulated circuit substrate 1 is prepared, as illustrated in FIG. 12. FIG. 12 omits the illustration of the conductive plate 11b of the insulated circuit substrate 1 illustrated in FIG. 1. The plural semiconductor chips 3 each equipped with the bonding layer 2a are mounted on the conductive plate 11a of the insulated circuit substrate 1 by use of a conveyer, for example. While FIG. 12 illustrates the case of including the plural semiconductor chips 3 each equipped with the bonding layer 2a, the present embodiment may include the single semiconductor chip 3 equipped with the bonding layer 2a as illustrated in FIG. 1.

Next, as illustrated in FIG. 13, the semiconductor chips 3 are pressed from the top surface side by pressing parts 41 made from silicon (Si) rubber attached to a metal die 42 of a pressing device. The execution of the heat treatment while the semiconductor chips 3 are pressed causes a sintering reaction in the bonding layers 2a. This sintering reaction is caused under the conditions in which a pressing force is set to about 1 MPa or greater and 60 MPa or less, a heating temperature is set to about 150° C. or higher and 350° C. or lower, and a heating time is set to about 1 minute or longer and 5 minutes or shorter, for example. This step leads the insulated circuit substrate 1 and the respective semiconductor chips 3 to be bonded together via the bonding layers 2a.

Thereafter, a typical process is executed including a step of placing the case 5 on the periphery of the insulated circuit substrate 1 and the semiconductor chips 3, a step of connecting the insulated circuit substrate 1, the semiconductor chips 3, and the external terminals 4a and 4b together via the bonding wires 6a, 6b, 6c, and the like, and a step of sealing these members with the sealing member 7, for example, so as to complete the semiconductor device according to the first embodiment.

The method of manufacturing the semiconductor device according to the first embodiment, which uses the bonding layer 2a made from the sintered material, can provide the semiconductor device with a variation in the life span avoided.

While the method of manufacturing the semiconductor device according to the first embodiment is illustrated above with the case of transferring a part of the sintered sheet 2 to the bottom surface of the semiconductor chip 3, the bonding layer 2a in a paste state may be applied to the bottom surface of the semiconductor chip 3 by screen printing or the like so as to have a thickness thicker in the middle than on the edge side.

The method of manufacturing the semiconductor device according to the first embodiment is illustrated above with the case of mounting the rubber sheet 32 on the top surface of the base 31, but does not necessarily use the rubber sheet 32 and may provide the base 31 with recesses. The method in this case may mount the sintered sheet 2 over the recesses to push the bottom surface of the semiconductor chip 3 against the sintered sheet 2, so as to allow the transfer of the bonding layer 2a having a thickness thicker in the middle than on the edge side.

Second Embodiment

A semiconductor device according to a second embodiment has the same configuration as the semiconductor device according to the first embodiment illustrated in FIG. 3 in that the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is located on the inside of the outer circumference of the semiconductor chip 3 and is located on the inside of the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3, as illustrated in FIG. 14. The semiconductor device according to the second embodiment differs from the semiconductor device according to the first embodiment in that the outer edge of the bonding layer 2a on the top surface side (toward the semiconductor chip 3) conforms to the outer circumference of the semiconductor chip 3 and conforms to the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3.

The other configurations of the semiconductor device according to the second embodiment are the same as those of the semiconductor device according to the first embodiment, and overlapping explanations are not repeated below. The semiconductor device according to the second embodiment can be produced by the same process as the method of manufacturing the semiconductor device according to the first embodiment.

The semiconductor device according to the second embodiment, which is configured to positively cause cracks starting from the stress-concentrated portions P1 and P2 of the bonding layer 2a so as to be intentionally led to be damaged, as in the case of the configuration of the semiconductor device according to the first embodiment, can avoid a variation in the life span of the semiconductor device. Further, the configuration in which the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3 conforms to the outer circumference of the semiconductor chip 3 can avoid a drop of a part of the bonding layer 2a as compared with the case of projecting to the outside of the outer circumference of the semiconductor chip 3.

Third Embodiment

A semiconductor device according to a third embodiment has the same configuration as the semiconductor device according to the first embodiment illustrated in FIG. 3 in that the outer edge of the bonding interface 21 between the bonding layer 2a and the conductive plate 11a is located on the inside of the outer circumference of the semiconductor chip 3 and is located on the inside of the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3, as illustrated in FIG. 15. The semiconductor device according to the third embodiment differs from the semiconductor device according to the first embodiment in that the outer edge of the bonding layer 2a on the top surface side (toward the semiconductor chip 3) is located on the inside of the outer circumference of the semiconductor chip 3 and conforms to the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3.

The other configurations of the semiconductor device according to the third embodiment are the same as those of the semiconductor device according to the first embodiment, and overlapping explanations are not repeated below. The semiconductor device according to the third embodiment can be produced by the same process as the method of manufacturing the semiconductor device according to the first embodiment.

The semiconductor device according to the third embodiment, which is configured to positively cause cracks starting from the stress-concentrated portions P1 and P2 so as to be intentionally led to be damaged, as in the case of the configuration of the semiconductor device according to the first embodiment, can avoid a variation in the life span of the semiconductor device. Further, the configuration in which the outer edge of the bonding interface 22 between the bonding layer 2a and the semiconductor chip 3 is located on the inside of the outer circumference of the semiconductor chip 3 can avoid a drop of a part of the bonding layer 2a as compared with the case of projecting to the outside of the outer circumference of the semiconductor chip 3.

Fourth Embodiment

A semiconductor device according to a fourth embodiment has the same configuration as the semiconductor device according to the first embodiment illustrated in FIG. 3 in that an outer edge of a bonding interface 23 between a bonding layer (2e, 2f) made from sintered material and the conductive plate 11a is located on the inside of the outer circumference of the semiconductor chip 3 and is located on the inside of an outer edge of a bonding interface 24 between the semiconductor chip 3 and the bonding layer (2e, 2f), as illustrated in FIG. 16. The semiconductor device according to the fourth embodiment differs from the semiconductor device according to the first embodiment in that the bonding layer (2e, 2f) has a two-layer structure including a first bonding layer (a lower-side bonding layer) 2e bonded to the conductive plate 11a and a second bonding layer (an upper-side bonding layer) 2f that bonds the lower-side bonding layer 2e to the semiconductor chip 3.

The lower-side bonding layer 2e and the upper-side bonding layer 2f are each made from sintered material in a paste state or in a sheet-like state, as in the case of the bonding layer 2a in the semiconductor device according to the first embodiment. The lower-side bonding layer 2e and the upper-side bonding layer 2f may be either made from the same material or made from different materials. The lower-side bonding layer 2e may have the same thickness as the upper-side bonding layer 2f, or may have a thickness that is either thinner or greater than that of the upper-side bonding layer 2f.

The outer edge of the bonding interface 23 between the lower-side bonding layer 2e and the conductive plate 11a is located on the inside of the outer edge of the bonding interface 24 between the semiconductor chip 3 and the upper-side bonding layer 2f. The stress-concentrated portions P3 and P4 are thus provided at the positions at the outer edge of the bonding interface 23 between the lower-side bonding layer 2e and the conductive plate 11a. The other configurations of the semiconductor device according to the fourth embodiment are the same as those of the semiconductor device according to the first embodiment, and overlapping explanations are not repeated below.

The semiconductor device according to the fourth embodiment, which is configured to positively cause cracks starting from the stress-concentrated portions P3 and P4 of the lower-side bonding layer 2e of the bonding layer (2e, 2f) so as to be intentionally led to be damaged, as in the case of the configuration of the semiconductor device according to the first embodiment, can avoid a variation in the life span of the semiconductor device.

An example of a method of manufacturing the semiconductor device according to the fourth embodiment is described below with reference to FIG. 17 to FIG. 19. First, as illustrated in FIG. 17, the upper-side bonding layer 2f in a paste state is applied evenly to the bottom surface of the semiconductor chip 3 by screen printing or the like, and the upper-side bonding layer 2f is then dried. Alternatively, the upper-side bonding layer 2f may be formed evenly on the bottom surface of the semiconductor chip 3 by a transfer of a sintered sheet. The upper-side bonding layer 2f may be preliminarily formed on the bottom surface of a semiconductor wafer before diced into each piece of the semiconductor chips 3.

Further, as illustrated in FIG. 18, the lower-side bonding layer 2e in a paste state is applied to the top surface of the conductive plate 11a of the insulated circuit substrate 1 by screen printing or the like so as to have a smaller area than the upper-side bonding layer 2f, and the lower-side bonding layer 2e is then dried. Alternatively, the lower-side bonding layer 2e of a sintered sheet may be deposited on the top surface of the conductive plate 11a of the insulated circuit substrate 1.

Next, as illustrated in FIG. 19, the upper-side bonding layer 2f provided on the bottom surface of the semiconductor chip 3 illustrated in FIG. 17 and the lower-side bonding layer 2e provided on the top surface of the insulated circuit substrate 1 are bonded together to be subjected to pressing and heating treatment so as to bond the insulated circuit substrate 1 and the semiconductor chip 3 together via the bonding layer (2e, 2f). The other steps of the method of manufacturing the semiconductor device according to the fourth embodiment are the same as those of the method of manufacturing the semiconductor device according to the first embodiment, and overlapping explanations are not repeated below.

While the semiconductor device according to the fourth embodiment is illustrated above with the configuration in which the bonding layer (2e, 2f) has the two-layer structure including the lower-side bonding layer 2e and the upper-side bonding layer 2f, the bonding layer may have a stacked structure including three or more layers made from sintered material. For example, when the bonding layer has a three-layer structure, a third bonding layer (an intermediate bonding layer) having a larger area than the lower-side bonding layer 2e and having a smaller area than the upper-side bonding layer 2f may be formed on the top surface of the lower-side bonding layer 2e after the lower-side bonding layer 2e is formed on the top surface of the conductive plate 11a of the insulated circuit substrate 1.

While the semiconductor device according to the fourth embodiment is illustrated above with the configuration in which the outer circumference of the upper-side bonding layer 2f conforms to the outer circumference of the semiconductor chip 3 and conforms to the outer edge of the bonding interface 24 between the semiconductor chip 3 and the upper-side bonding layer 2f, the outer circumference of the upper-side bonding layer 2f may be located on the inside of the outer circumference of the semiconductor chip 3 and conform to the outer edge of the bonding interface 24 between the semiconductor chip 3 and the upper-side bonding layer 2f. In addition, the semiconductor device according to the fourth embodiment is illustrated above with the case in which the outer circumference of the upper-side bonding layer 2f conforms to the outer circumference of the semiconductor chip 3, but the outer circumference of the upper-side bonding layer 2f may project to the outside from the outer circumference of the semiconductor chip 3.

Other Embodiments

As described above, the invention has been described according to the first to fourth embodiments, but it should not be understood that the description and drawings implementing a portion of this disclosure limit the invention. Various alternative embodiments of the present invention, examples, and operational techniques will be apparent to those skilled in the art from this disclosure.

The respective semiconductor devices according to the first to fourth embodiments have been illustrated above with the case in which the semiconductor chip 3 is bonded via the bonding wires 6a, 6b, and 6c, but are not limited to this case. For example, the present invention may also be applied to a semiconductor device in which an implanted substrate including a printed board to which pin-like post electrodes are inserted is provided over the semiconductor chip 3 connected to the post electrodes.

The configurations disclosed in the first to fourth embodiments may be combined as appropriate within a range that does not contradict with the scope of the respective embodiments. As described above, the invention includes various embodiments of the present invention and the like not described herein. Therefore, the scope of the present invention is defined only by the technical features specifying the present invention, which are prescribed by claims, the words and terms in the claims shall be reasonably construed from the subject matters recited in the present Specification.

Claims

1. A semiconductor device comprising: a conductive plate having a main surface:a semiconductor chip deposited to be opposed to the main surface of the conductive plate, anda bonding layer including porous sintered material and arranged between the conductive plate and the semiconductor chip,wherein a first outer edge of a bonding interface between the bonding layer and the conductive plate is located on an inside of an outer circumference of the semiconductor chip and is located on an inside of a second outer edge of a bonding interface between the bonding layer and the semiconductor chip.

2. The semiconductor device of claim 1, wherein an outer edge of the bonding layer toward the semiconductor chip projects outward from the outer circumference of the semiconductor chip.

3. The semiconductor device of claim 1, wherein an outer edge of the bonding layer toward the semiconductor chip conforms to the outer circumference of the semiconductor chip.

4. The semiconductor device of claim 1, wherein an outer edge of the bonding layer toward the semiconductor chip is located on an inside of the outer circumference of the semiconductor chip.

5. The semiconductor device of claim 1, wherein a surface of the bonding layer toward the conductive plate on an outside of the first outer edge is convex toward the conductive plate.

6. The semiconductor device of claim 1, wherein a stress-concentrated portion is provided in a part at the first outer edge.

7. The semiconductor device of claim 1, wherein a porosity in a part of the bonding layer on an inside of the first outer edge is higher than a porosity in a part of the bonding layer on an inside of the second outer edge and on an outside of the first outer edge.

8. The semiconductor device of claim 1, wherein the bonding layer includes a first bonding layer bonded to the conductive plate, anda second bonding layer provided to bond the first bonding layer and the semiconductor chip together.

9. The semiconductor device of claim 1, further comprising a sealing member provided to seal the semiconductor chip and the bonding layer, wherein the first outer edge has a point at which three of the bonding layer, the conductive plate, and the sealing member overlap with each other.