The present invention relates to a semiconductor device wherein a resin-molded semiconductor package is jointed to a cooling device.
Conventional package-type power modules need gel encapsulation of semiconductor elements. A large number of assembly process steps and high parts cost are required for such power modules. Power modules having semiconductor elements transfer-molded are therefore being developed (see, for example, Patent Literature 1). A resin-molded semiconductor package needs to be fixed on a cooling device in order to be cooled, and a method of fixing such a semiconductor package by using screws or the like has been proposed (see, for example, Patent Literature 2).
Patent Literature 1: Japanese Patent Laid-Open No. 2001-250890
Patent Literature 2: Japanese Patent No. 4583122
With the method of fixing by using screws or the like, there is a problem that the number of component parts is increased and the overall weight is increased. On the other hand, methods of joining a semiconductor package to a cooling device without using screws or the like are being studied. However, no success has been achieved in ensuring compatibility between the heat conductivity and the strength of joining since the cooling portion and the joint coincide with each other.
The present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device which can ensure compatibility between the heat conductivity and the strength of joining and achieve a reduction in the number of component parts and a reduction in weight.
A semiconductor device according to the present invention includes a semiconductor element; a cooling body joined to the semiconductor element; a resin encapsulating the semiconductor element; and a cooler having an opening, wherein a portion of the cooling body projects from a main surface of the resin, the cooling body projecting from the resin is inserted in the opening of the cooler, and the main surface of the resin and the cooler are joined to each other by a joining material.
The present invention makes it possible to ensure compatibility between the heat conductivity and the strength of joining and achieve a reduction in the number of component parts and a reduction in weight.
A semiconductor device according to the embodiments of the present invention will be described with reference to the drawings. The same components will be denoted by the same symbols, and the repeated description thereof may be omitted.
A cooling fin 9 is joined to the lower surface of the semiconductor element 1 through the circuit pattern 5 and the insulating plate 4. Component parts including the semiconductor element 1 are encapsulated (transfer-molded) in a resin 10. A portion of the cooling fin 9 projects from a lower surface of the resin 10. The signal electrode 3 and the high-voltage electrodes 6 and 8 are also led out of the resin 10.
This resin-molded semiconductor package is joined to a cooler 11. The cooler 11 has an opening 12. The cooling fin 9 projecting from the resin 10 is inserted in the opening 12 of the cooler 11. The lower surface of the resin 10 and the cooler 11 are joined to each other by means of a joining material 13 such as an adhesive. The cooler 11 supplies a cooling medium to the cooling fin 9 in the opening 12, thereby cooling the semiconductor element 1 through the cooling fin 9.
Compatibility between the heat conductivity and the strength of joining can be ensured by definitely separating the cooling portion and the joint from each other as described above. For example, even when the semiconductor element 1 performs a high-temperature operation such that the temperature of the cooling portion is increased to a high temperature, the change in temperature of the joint can be limited. Therefore, an SiC semiconductor element provided as a high-temperature operation guaranteed product can be used as the semiconductor element 1. A reduction in the number of component parts and a reduction in weight can also be achieved since there is no need to add structural parts such as screws.
In the conventional device, a heat-conducting material is interposed between the cooling body and the cooler and, therefore, the semiconductor device warps according to the thickness of the heat-conducting material. In the present embodiment, the cooling performance can be secured without being influenced by a warp of the device since the cooling fin 9 is inserted in the opening 12 of the cooler 11.
Also, the provision of the insulating plate 4 between the semiconductor element 1 and the cooling fin 9 enables use of an electrically conductive fluid such as water as cooling medium. The cooling performance can thereby be secured. In a case where the cooling medium is an insulating plate such as air or an insulating fluid, the insulating plate 4 may be removed and the semiconductor element 1 and the circuit pattern 5 may be provided on the cooling fin 9.
Preferably, a surface treatment for increasing the strength of joining to the joining material 13 is performed on the lower surface of the resin 10. For example, a hydrophilization treatment to roughen the joint surface is performed.
A construction described below is added to the construction in Embodiment 1. That is, a cooling fin 15 is joined to the upper surface of the semiconductor element 1 through the high-voltage electrode 8 and an insulating plate 16. A cooler 17 has an opening 18. A portion of the cooling fin 15 projects from an upper surface of the resin 10. The cooling fin 15 projecting from the resin 10 is inserted in the opening 18 of the cooler 17. The upper surface of the resin 10 and the cooler 17 are joined to each other by means of a joining material 19.
The cooling structure provided above the semiconductor element 1 can have the same effect as that of the cooling structure provided below the semiconductor element 1 as described in Embodiment 1. An anchoring structure such as that in Embodiment 2 may be provided in the upper and lower surfaces of the resin 10.
The heat conductivity of the cooling fin 9 can be improved by embedding the electrically conductive material 21 in the insulating material 20 as described above. Since the electrically conductive material 21 is electrically insulated from the semiconductor element 1 by the insulating material 20, the desired insulation can also be ensured.
In a portion inserted in the opening 12 of the cooler 11, the electrically conductive material 21 may be exposed out of the insulating material 20. A composite structure of the cooling fin 9 such as that provided in the present embodiment may also be applied to Embodiments 2 and 3.
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2012/053375 | 2/14/2012 | WO | 00 | 5/12/2014 |
Publishing Document | Publishing Date | Country | Kind |
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WO2013/121521 | 8/22/2013 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
20040096584 | Naruskevicius et al. | May 2004 | A1 |
20060055056 | Miura et al. | Mar 2006 | A1 |
20060067059 | Ushijima et al. | Mar 2006 | A1 |
20090321924 | Funakoshi et al. | Dec 2009 | A1 |
20100282459 | Leonhardt | Nov 2010 | A1 |
20110304039 | Miyamoto | Dec 2011 | A1 |
20120001318 | Mamitsu et al. | Jan 2012 | A1 |
Number | Date | Country |
---|---|---|
2001-250890 | Sep 2001 | JP |
2005-064131 | Mar 2005 | JP |
2006-310363 | Nov 2006 | JP |
2007-184315 | Jul 2007 | JP |
2009-064870 | Mar 2009 | JP |
2010-010504 | Jan 2010 | JP |
2010-177529 | Aug 2010 | JP |
4583122 | Sep 2010 | JP |
2012-004218 | Jan 2012 | JP |
Entry |
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Notification of Transmittal of Translation of the International Preliminary Report on Patentability and Translation of Written Opinion of the International Searching Authority; PCT/JP2012/053375; issued on Aug. 28, 2014. |
International Search Report; PCT/JP2012/053375; May 29, 2012. |
An Office Action issued by the German Patent Office on Jul. 13, 2015, which corresponds to German Patent Application No. 112012005867.4 and is related to U.S. Appl. No. 14/357,669; with English language partial translation. |
Number | Date | Country | |
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20150108629 A1 | Apr 2015 | US |