Claims
- 1. A method for forming a silicone polymer insulation film on a semiconductor substrate by plasma treatment, comprising the steps of:providing a reaction gas consisting of a source gas and an additive gas to a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed, said source gas comprising a silicon-containing hydrocarbon compound having formula SiαOα−1R2α−β+2(OCnH2n+1)β wherein α is an integer of 1-3, β is 1 or 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, said additive gas being composed of an inert or inactive gas and optionally a reducing gas; heating the substrate to a point near or higher than the heat resistance temperature required for the film; and activating plasma polymerization reaction in the reaction chamber where the reaction gas is present, to form a silicone polymer film on the semiconductor substrate, while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction chamber, wherein 100 msec≦Rt, Rt[s]=9.42×107(Pr·Ts/Ps·Tr)rw2d/F wherein:Pr: reaction chamber pressure (Pa) Ps: standard atmospheric pressure (Pa) Tr: average temperature of the reaction gas (K) Ts: standard temperature (K) rw: radius of the silicon substrate (m) d: space between the silicon substrate and the upper electrode (m) F: total flow volume of the reaction gas (sccm).
- 2. The method according to claim 1, wherein the residence time is determined by correlating the dielectric constant with the residence time.
- 3. The method according to claim 1, wherein the alkoxy present in the silicon-containing hydrocarbon compound has 1 to 3 carbon atoms.
- 4. The method according to claim 1, wherein the hydrocarbon present in the silicon-containing hydrocarbon compound has 1 to 6 carbon atoms.
- 5. The method according to claim 1, wherein the silicon-containing hydrocarbon compound has 1 to 3 silicon atoms.
- 6. The method according to claim 1, wherein R in the formula is CH3.
- 7. The method according to claim 1, wherein the additive gas comprises at least either argon (Ar) or Helium (He).
- 8. The method according to claim 1, wherein the flow of the reaction gas is controlled to render the dielectric constant of the silicone polymer film lower than 3.30.
- 9. The method according to claim 1, wherein the flow of the reaction gas is controlled to render the dielectric constant of the silicone polymer film no more than 3.1.
- 10. The method according to claim 1, wherein the flow of the reaction gas is controlled to render the dielectric constant of the silicone polymer film no more than 2.8.
- 11. The method according to claim 1, wherein the substrate is heated to a temperature of θ±50° C. wherein θ is the heat resistance temperature required for the film.
- 12. The method according to claim 1, wherein Rt is no less than 165 msec.
- 13. The method according to claim 1, wherein the reducing gas is at least one of H2 or CH4.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-037929 |
Feb 1998 |
JP |
|
Parent Case Info
This is a CIP of Application Ser. No. 09/243,156, filed Feb. 2, 1999.
US Referenced Citations (9)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0 826 791 |
Mar 1998 |
EP |
10-284486 |
Oct 1998 |
JP |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/243156 |
Feb 1999 |
US |
Child |
09/326848 |
|
US |