Claims
- 1. A semiconductor structure comprising:
a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and wherein the monocrystalline compound semiconductor material is formed on a template layer that is formed using a beam of ions.
- 2. The semiconductor structure of claim 1 wherein the beam of ions is a low energy beam of ions.
- 3. The semiconductor structure of claim 2 wherein the beam of ions has an energy between 10 electron volts and 2000 electron volts.
- 4. The semiconductor structure of claim 1 wherein a Kaufman source introduces the beam of ions.
- 5. The semiconductor structure of claim 1 wherein the template layer includes a surfactant.
- 6. The semiconductor structure of claim 5 wherein the surfactant includes a material selected from the group consisting of Al, In, and Ga.
- 7. The semiconductor structure of claim 1 wherein the beam of ions causes the monocrystalline perovskite oxide material to become amorphous.
- 8. The semiconductor structure of claim 5 wherein the template layer further comprises a capping layer.
- 9. The semiconductor structure of claim 8 wherein the capping layer is formed by exposing the surfactant to a cap inducing material.
- 10. The semiconductor structure of claim 1 wherein the monocrystalline compound semiconductor material comprises GaAs.
- 11. The semiconductor structure of claim 1 wherein the beam of ions includes ions from the group consisting of Ar+, He+, Ne+, Kr+, Xe+ and Rn+.
- 12. The semiconductor structure of claim 1 wherein the monocrystalline perovskite oxide material is formed using a beam of ions.
- 13. A process for fabricating a semiconductor structure comprising:
providing a monocrystalline silicon substrate; depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects; forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate; depositing a template layer overlying the monocrystalline perovskite oxide material including supplying a beam of ions; and epitaxially forming a monocrystalline compound semiconductor layer overlying the template layer.
- 14. The process of claim 13 wherein the beam of ions is a low energy beam of ions.
- 15. The process of claim 14 wherein the beam of ions has an energy between 10 electron volts and 2000 electron volts.
- 16. The process of claim 13 wherein a Kaufman source supplies the beam of ions.
- 17. The process of claim 13 wherein the template layer includes a surfactant.
- 18. The process of claim 17 wherein the surfactant includes a material selected from the group consisting of Al, In, and Ga.
- 19. The process of claim 13 wherein the beam of ions causes the monocrystalline perovskite oxide material to become amorphous.
- 20. The process of claim 17 wherein the template layer further comprises a capping layer.
- 21. The process of claim 20 wherein the capping layer is formed by exposing the surfactant to a cap inducing material.
- 22. The process of claim 13 wherein the monocrystalline compound semiconductor material comprises GaAs.
- 23. The process of claim 13 wherein the beam of ions includes ions from the group consisting of Ar+, He+, Ne+, Kr+, Xe+ and Rn+.
- 24. The process of claim 12 wherein the step of depositing the monocrystalline perovskite oxide film includes supplying a beam of ions.
- 25. A process for fabricating a semiconductor structure comprising:
providing a monocrystalline silicon substrate; depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate; forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate; amorphizing at least a portion of the monocrystalline perovskite oxide layer to increase the thickness of the amorphous oxide layer by annealing the monocrystalline perovskite oxide layer; depositing a template layer overlying the monocrystalline perovskite oxide material including supplying a beam of ions; and epitaxially forming a monocrystalline compound semiconductor layer overlying the template layer.
- 26. The process of claim 25 further comprising increasing the thickness of the amorphous oxide layer by annealing in the presence of the beam of ions.
- 27. The process of claim 25 further comprising increasing the thickness of the amorphous oxide layer using an ion beam deposition process.
- 28. The process of claim 25 wherein the beam of ions has an energy between 10 electron volts and 2000 electron volts.
- 29. The process of claim 25 wherein a Kaufman source supplies the beam of ions.
- 30. The process of claim 25 wherein the monocrystalline compound semiconductor material comprises GaAs.
- 31. The process of claim 25 wherein the beam of ions includes ions from the group consisting of: Ar+, He+, Ne+, Kr+, Xe+ and Rn+.
- 32. The process of claim 25 wherein the template layer includes a surfactant.
- 33. The process of claim 32 wherein the surfactant includes a material selected from the group consisting of Al, In and Ga.
- 34. The process of claim 25 wherein the step of depositing the monocrystalline perovskite film includes supplying a beam of ions.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to pending U.S. application Docket No. JG00313, filed Jul. 3, 2001, and assigned to Motorola, Inc.