Patent Application
20220270862
This application claims priority to Japanese Patent Application No. 2021-019669 filed on Feb. 10, 2021, the entire contents of which are incorporated herein by reference.
The present disclosure relates to a substrate support, a plasma processing system and a plasma etching method.
Japanese Laid-open Patent Publication No. 2015-109249 discloses a plasma processing apparatus for exciting a processing gas by microwaves. The plasma processing apparatus includes a processing chamber, a substrate support disposed in the processing chamber and having a lower electrode and an electrostatic chuck disposed on the lower electrode, and a focus ring made of a dielectric material and extending in an annular shape to surround the electrostatic chuck.
The technique of the present disclosure appropriately controls plasma distribution on a substrate during plasma processing.
In accordance with an aspect of the present disclosure, there is a substrate support for use in a plasma processing apparatus, the substrate support comprising: a base; a ceramic plate disposed on the base, the ceramic plate having a substrate supporting region and a ring supporting region surrounding the substrate supporting region; an insulating annular member disposed around the base and the ceramic plate; a fixed edge ring having an inner portion and an outer portion, the inner portion being supported on the ring supporting region, the outer portion being supported on the insulating annular member, the outer portion having a first width; a movable edge ring disposed above the outer portion of the fixed edge ring, the movable edge ring having a second width smaller than the first width; and an actuator configured to vertically move the movable edge ring with respect to the fixed edge ring.
The objects and features of the present disclosure will become apparent from the following description of embodiments, given in conjunction with the accompanying drawings, in which:
In a semiconductor device manufacturing process, plasma processing such as etching, film formation, or the like is performed on a semiconductor substrate (hereinafter, referred to as “substrate”). In plasma processing, the substrate is processed by plasma that is generated by exciting a processing gas.
There are various methods for exciting a processing gas. For example, as disclosed in Japanese Laid-open Patent Publication No. 2015-109249, a plasma processing apparatus for exciting a processing gas by microwaves is used. In this plasma processing apparatus, a focus ring is disposed around the substrate support. The focus ring adjusts a sheath potential outside an edge of a substrate placed on the substrate support to adjust in-plane uniformity of plasma processing on the substrate.
However, the focus ring is not enough to ensure uniformity of plasma distribution. Therefore, conventionally, the plasma distribution is controlled by adjusting plasma processing conditions. However, if the plasma processing conditions are adjusted, the restriction in the plasma processing increases and, thus, a degree of freedom decreases. Further, the conventional plasma processing apparatus does not include a plasma distribution control knob (control member). Therefore, the conventional plasma processing needs to be improved.
The technique of the present disclosure appropriately controls plasma distribution on a substrate during plasma processing. Hereinafter, a substrate support, a plasma processing system, and a plasma etching method according to embodiments will be described with reference to the drawings. Like reference numerals will be given to like parts having substantially the same functions throughout this specification and the drawings, and redundant description thereof will be omitted.
<Configuration of Plasma Processing System>
First, the plasma processing system according to an embodiment will be described.
In one embodiment, as shown in
The plasma generator 12 is configured to generate a plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance (ECR) plasma, helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Further, various types of plasma generators including an alternating current (AC) plasma generator and a direct current (DC) plasma generator may be used. In one embodiment, an AC signal (AC power) used in the AC plasma generator has a frequency within a range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency within a range of 200 kHz to 150 MHz.
The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in the present disclosure. The controller 2 may be configured to control individual components of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, the controller 2 may be partially or entirely included in the plasma processing apparatus 1. The controller 2 may include, e.g., a computer 2a. The computer 2a may include, e.g., a central processing unit (CPU) 2a1, a storage device 2a2, and a communication interface 2a3. The central processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage device 2a2. The storage device 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 through a communication line such as a local area network (LAN) or the like.
<Configuration of Plasma Processing Apparatus>
Hereinafter, a configuration example of a plasma processing apparatus using microwaves will be described as an example of the plasma processing apparatus 1.
In one embodiment, as shown in
The substrate support 11 supports a substrate (wafer) W. The configuration of the substrate support 11 will be described in detail later.
The microwave supply 20 includes the radial line slot antenna 21, a coaxial waveguide 22, a mode converter 23, and a microwave source 24. The radial line slot antenna 21 is disposed at an opening formed on a ceiling surface of the plasma processing chamber 10. The radial line slot antenna 21 compresses microwaves to shorten the wavelength thereof, and irradiates circularly polarized microwaves into the plasma processing space 10s. The coaxial waveguide 22 is connected to a central portion of the radial line slot antenna 21. Further, the mode converter 23 is connected to an upper end of the coaxial waveguide 22, and the microwave source 24 is further connected to the mode converter 23. The mode converter 23 converts the microwaves into a desired vibration mode. The microwave source 24 is disposed outside the plasma processing chamber 10, and may generate microwaves of 2.45 GHz, for example.
In one embodiment, the microwaves generated from the microwave source 24 sequentially propagate through the mode converter 23 and the coaxial waveguide 22, and then are irradiated from the radial line slot antenna 21 to the plasma processing space 10s. Due to the microwaves, plasma is generated from at least one processing gas supplied into the plasma processing space 10s. Therefore, the microwave supply 20 can function as at least a part of the plasma generator 12.
The gas supply 30 includes a gas supply line 31, at least, one gas source 32, and at least one flow rate controller 33. The gas supply line 31 penetrates through the central portion of the radial line slot antenna 21, and one end of the gas supply line 31 is opened at the central portion of the bottom surface of the radial line slot antenna 21. Further, the gas supply line 31 penetrates through the coaxial waveguide 22 and the mode converter 23, and the other end of the gas supply line 31 is connected to at least one gas source 32. The flow rate controller 33 may include, e.g., a mass flow controller or a pressure-control type flow rate controller. Further, the gas supply 30 may include at least one flow rate modulation device for modulating the flow rate of at least one processing gas or causing it to pulsate. In one embodiment, at least one processing gas is supplied from the corresponding gas source 32 to the gas supply line 31 through the corresponding flow rate controller 33, and further introduced into the plasma processing space 10s. At least one processing gas has a gas containing, e.g., F, Cl, Br, Ar or the like.
The power supply 40 includes an RF power supply 41 connected to the plasma processing chamber 10 through at least one impedance matching circuit. The RF power supply 41 is configured to supply at least one RF signal (RF power), such as a bias RF signal, to a base 100 (to be described later) of the substrate support 11 that includes a conductive member. By supplying the bias RF signal to the base 100 of the substrate support 11, a bias potential is generated at the substrate W, and ions in the plasma can be attracted to the substrate W.
In one embodiment, the RF power supply 41 includes an RF generator 41a. The RF generator 41a is connected to the base 100 of the substrate support 11 through at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency within a range of 400 kHz to 13.56 MHz. In one embodiment, the RF generator 41a may be configured to generate a plurality of bias RF signals having different frequencies. The generated single or multiple bias RF signals are supplied to the base 100 of the substrate support 11. In various embodiments, the bias RF signal may be pulsated.
Further, the power supply 40 may include a DC power supply 42 connected to the plasma processing chamber 10. The DC power supply 42 includes a bias DC generator 42a. In one embodiment, the bias DC generator 42a is connected to the base 100 of the substrate support 11 and is configured to generate a bias DC signal. The generated bias DC signal is applied to the base 100 of the substrate support 11. In one embodiment, the bias DC signal may be applied to another electrode such as an electrodes in a ceramic plate 101 (to be described later) of the substrate support 11. In various embodiments, the bias DC signal may be pulsated. The bias DC generator 42a may be provided in addition to the RF power supply 41, or may be provided instead of the RF power generator 41a.
The exhaust system 50 may be connected to a gas cutlet 10e disposed at the bottom portion of the plasma processing chamber 10, for example. The exhaust system 50 may include a pressure control valve and a vacuum pump. The pressure control valve adjusts the pressure in the plasma processing space 10s. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.
<Configuration of Substrate Support>
Hereinafter, a configuration example of the substrate support 11 will be described.
In one embodiment, as shown in
The base 100 includes a conductive member made of a conductive metal, e.g., aluminum, or the like. The conductive member of the base 100 functions as a lower electrode. A flow path 103 is formed in the base 100. A heat transfer fluid such as brine or a gas flows through the flow path 103.
The ceramic plate 101 is disposed on the base 100. The ceramic plate 101 is configured to attract and hold both the substrate W and the fixed edge ring 110 by an electrostatic force, and functions as an electrostatic chuck. In other words, the ceramic plate 101 has a substrate supporting region (central region) 103a for supporting the substrate W and a ring supporting region (annular region) 101b for supporting the fixed edge ring 110. The ring supporting region 101b is disposed around the substrate supporting region 101a to surround the substrate supporting region 101a in plan view.
The insulating annular member (insulator ring) 102 is disposed around the base 100 and the ceramic plate 101 to surround the base 100 and the ceramic plate 101 in plan view. The insulating annular member 102 is made of an insulator such as ceramic, quartz, or the like.
The fixed edge ring 110 is disposed around the substrate W supported by the ceramic plate 101 to surround the substrate W in plan view. The fixed edge ring 110 has an inner peripheral portion (inner portion) 110a and an outer peripheral portion (outer portion) 110b. The inner peripheral portion 110a is supported on the ring supporting region 101b of the ceramic plate 101, and the outer peripheral portion 110b is supported on the insulating annular member 102. The fixed edge ring 110 is provided to improve uniformity of plasma processing, for example. The fixed edge ring 110 is made of a plasma resistant, material, because it is exposed to plasma during plasma processing. In one embodiment, the fixed edge ring 110 is made of an insulating material. In one embodiment, the insulating material is quartz. The outer peripheral portion 110b of the fixed edge ring 110 has a width (first width) W.
The movable edge ring 120 is supported by lifter pins 121 extending downward from the movable edge ring 120. The movable edge ring 120 is disposed above the outer peripheral portion 110b of the fixed edge ring 110, i.e., above the insulating annular member 102. The lifter pins 121 penetrate through the fixed edge ring 110 and the insulating annular member 102. The movable edge ring 120 and the lifter pin 121 are vertically moved by the moving mechanism 122. The movable edge ring 120 and the lifter pin 121 are made of a plasma resistant material because they are exposed to plasma during plasma processing. In one embodiment, they are made of an insulating material. In one embodiment, the insulating material is quartz. The moving mechanism 122 is not particularly limited, and may be an actuator.
<Support Structure for Movable Edge Ring>
As shown in
In the present embodiment, the support structure for the movable edge ring 120 and the lifter pin 121 is simple, and the friction with the fixed edge ring 110 can be reduced, which makes it possible to suppress generation of dust due to the friction.
<Planar Position of Movable Edge Ring>
Here, as shown in
Therefore, in the present embodiment, the movable edge ring 120 and the lifter pin 121 are disposed at the radially outer side of the RF path, so that the vertical movement is not performed near the RF path. Therefore, the variation in ER and CD can be suppressed, and abnormal discharge can be further suppressed. Further, by separating the movable edge ring 120 and the lifter pin 121 from the substrate W, it is possible to reliably suppress adhesion of particles to the substrate W even in the case where dust is generated due to the vertical movement.
An inner diameter of the movable edge ring 120 is, e.g., 340 mm to 370 mm, and an outer diameter thereof is, e.g., 380 mm to 410 mm.
<Vertical Movement Amount of Movable Edge Ring>
A movement amount (displacement) D of the movable edge ring 120 by the moving mechanism 122 is, e.g., 0 mm to 40 mm. The movement amount D of the movable edge ring 120 can be increased because the support structure for the movable edge ring 120 and the lifter pin 121 is simple and the movable edge ring 120 is disposed at the radially outer side as described above. When the movement amount D is 0 mm, the movable edge ring 120 is placed on the upper surface of the fixed edge ring 110 as indicated by dotted lines in
In accordance with the substrate support 11 of the present embodiment, the movable edge ring 120 can function as a plasma distribution control knob. As described above, conventionally, plasma processing conditions and the like were controlled in order to control the plasma distribution (difference in plasma between the center and the edge of the substrate W). However, in the case of adjusting the plasma processing conditions, the restriction in the plasma processing increases and, thus, a degree of freedom decrease. Therefore, in the present embodiment, the movable edge ring 120 can function as the plasma distribution control knob, so that it is possible to perform plasma processing uniformly on the substrate surface and also possible to increase the degree of freedom of plasma processing conditions.
Although it is not illustrated, the substrate support 11 may include a temperature control module configured to adjust at least one of the ceramic plate 101, the insulating annular member 102, the fixed edge ring 110, the movable edge ring 120, or the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, or a combination thereof, in addition to the flow path 103. Further, the substrate support 11 may include a heat transfer gas supply configured to supply a heat transfer gas to a space between the backside of the substrate W and the substrate supporting region 101a.
<Plasma Etching Method>
Next, a plasma processing method (plasma etching method) using the plasma processing system configured as described above will be described. In the present embodiment, a case where the substrate W is subjected to etching, e.g., so-called silicon etching, will be described.
First, in the plasma processing apparatus 1, the substrate W is loaded into the plasma processing chamber 10. The substrate W is placed on the ceramic plate 101 of the substrate support 11 and attracted and held by the electrostatic force. Then, the exhaust, system 50 is used to reduce a pressure in the plasma processing space 10s to a desired pressure.
Next, the gas supply 30 supplies the processing gas into the plasma processing space 10s, and the microwave supply 20 irradiates microwaves into the plasma processing space 10s. Plasma is generated from the processing gas in the plasma processing space 10s by the microwaves. In this case, the movable edge ring 120 and the lifter pin 121 are vertically moved by the moving mechanism 122, and the movement, amount D thereof is controlled to control the electron density (plasma) at the edge portion of the substrate W. As a result, the plasma distribution on the substrate W can be controlled to be uniform.
In the case of generating plasma, the power supply 40 supplies the bias RF power to the conductive member of the base 300. Accordingly, a bias potential is generated at the substrate W, and ions in the plasma are attracted to the substrate W. Then, the substrate W is exposed to the plasma, and silicon of the substrate W is etched.
When the substrate W is etched in a desired shape, the supply of the processing gas, the irradiation of the microwaves, and the supply of the bias RF power are stopped. Then, the substrate W is unleaded from the plasma processing chamber 10, and a series of plasma processing is completed.
When the plasma processing is repeatedly performed on a plurality of substrates W, the fixed edge ring 110 is consumed and the thickness of the fixed edge ring 110 is reduced. Therefore, a sheath shape changes above the fixed edge ring 110 and the edge portion of the substrate W. Therefore, in the case of generating plasma from the processing gas in the plasma processing space 10s, the movement amount D of the movable edge ring 120 is adjusted. Accordingly, the electron density (plasma) at the edge portion of the substrate W is controlled, and the plasma distribution on the substrate W can be controlled to be uniform. Hence, the controller 2 is configured to control the plasma processing apparatus 1 to perform first to fifth steps. In the first step, the substrate W is disposed on the substrate supporting region (central region) 101a of the substrate support 11. In one embodiment, the substrate W includes a silicon layer. In the second step, the processing gas is supplied to the plasma processing chamber 10. In the third step, plasma is generated from the processing gas supplied into the plasma processing chamber 10. In the fourth step, the substrate W on the substrate support 11 is exposed to the plasma, so that the silicon layer on the substrate W is etched. In the fifth step, the movable edge ring 120 is vertically moved by the lifter pins 121. The fifth step may be performed while plasma is being generated in the plasma processing chamber 10, i.e., while the silicon layer on the substrate W is being etched, or may be performed before plasma is generated in the plasma processing chamber 10. Further, the fifth step may be performed before the first step.
It should be noted that the above-described embodiments are illustrative in all respects and are not restrictive. The above-described embodiments may be omitted, replaced, or changed in various forms without departing from the scope, of the appended claims and the gist thereof. For example, the above embodiment has described the case of etching the silicon layer of the substrate W. However, the present disclosure is not limited thereto, and may be applied to a case of etching a silicon oxide layer. In this case, the fixed edge ring 110 and the movable edge ring 120 may be made of Si or SiC material.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-019669 | Feb 2021 | JP | national |
