During semiconductor wafer fabrication, electrically conductive active area contacts are formed between active areas at the substrate level of the wafer and electrically conductive interconnect lines located above the substrate level. Also, electrically conductive gate contacts are formed between transistor gate structures within the wafer and electrically conductive interconnect lines located above the gate structures. Conventional active area contact and gate contact fabrication methods have relied upon photolithographic techniques in which a photomask is used to project a light pattern onto a photoresist layer deposited on the wafer, so as to transfer the pattern to the photoresist layer, wherein the pattern defines various openings within the photoresist layer at which contacts are to be formed. The various contacts are required to be accurately aligned to the underlying active areas and gate features for proper contact placement, and ultimately for proper device operation. Therefore, the photomask must be accurately aligned to the wafer to enable proper transfer of the contact pattern onto the wafer.
As device sizes become smaller and their features become more closely spaced on the wafer, contact placement and fabrication becomes more difficult. For example, it becomes more difficult to satisfy the increasing photomask-to-wafer alignment accuracy requirements. Therefore, it is of interest to seek methods by which contacts can be more accurately placed and fabricated for devices having smaller and more closely spaced features.
In one embodiment, a method is disclosed for fabricating an active area contact within a semiconductor wafer. In the method, a number of first hard mask portions are formed over a corresponding number of underlying gate structures, such that each first hard mask portion vertically shadows a respective one of the underlying gate structures. Also in the method, a number of second hard mask filaments are formed adjacent to each of the number of first hard mask portions. A combined width of each first hard mask portion and its adjoining second hard mask filaments is greater than a width of the respective underlying gate structure. Also, a width of each second hard mask filament defines an active area contact-to-gate structure spacing. The method further includes an operation for etching a passage between facing surfaces of neighboring second hard mask filaments, and through a depth of the semiconductor wafer to an active area. Then, an electrically conductive material is deposited within the passage to form the active area contact.
In another embodiment, a method is disclosed for fabricating a gate contact within a semiconductor wafer. In the method, a first hard mask portion is formed over a gate structure within a section of the semiconductor wafer, such that the first hard mask portion vertically shadows the gate structure. Also, the first hard mask portion is formed to include substantially vertical side surfaces. Also in the method, a second hard mask filament is formed adjacent to each side surface of the first hard mask portion. An etching operation is then performed to etch a passage through the first hard mask portion, and through a depth of the semiconductor wafer to a top surface of the gate structure. During this etching operation, surfaces of the second hard mask filaments adjacent to the vertical side surfaces of the first hard mask portion are revealed through etching of the first mask portion. The revealed side surfaces of the first hard mask portion define side surfaces of the passage. The method then proceeds with an operation for depositing an electrically conductive material within the passage to form the gate contact.
In another embodiment, a method is disclosed for fabricating an active area contact and a gate contact within a semiconductor wafer. The method includes an operation for depositing a photon absorption layer between gate structures within a section of the semiconductor wafer, so as to substantially cover an area present between gate structures with the photon absorption layer while leaving a top surface of each gate structure uncovered. Then, a dielectric layer is deposited over both the photon absorption layer and the top of each gate structure within the section of the semiconductor wafer. The method continues with forming a number of first hard mask portions on the dielectric layer and over the gate structures within the section of the semiconductor wafer. Each first hard mask portion vertically shadows a respective one of the gate structures. Also, each first hard mask portion includes substantially vertical side surfaces. The method then proceeds with forming a second hard mask filament adjacent to each vertical side surface of each first hard mask portion, such that each second hard mask filament has an exposed side surface. A width of each second hard mask filament defines an active area contact-to-gate structure spacing. The method also includes an operation for etching a first passage between facing exposed side surfaces of a given pair of neighboring second hard mask filaments, and through a depth of the semiconductor wafer to an active area. The method further includes an operation for etching a second passage through a given first hard mask portion, and through a depth of the semiconductor wafer to a top surface of the gate structure underlying the given first hard mask portion. Surfaces of the second hard mask filaments adjacent to the vertical side surfaces of the given first hard mask portion are revealed through etching of the given first mask portion. These revealed surfaces of the second hard mask filaments define side surfaces of the second passage. The method then proceeds with an operation for depositing an electrically conductive material within both the first and second passages to respectively form the active area contact and the gate contact.
In another embodiment, a semiconductor device is disclosed. The semiconductor device includes a linear gate structure having side surfaces and a top surface. A width of the linear gate structure is defined by a perpendicular distance between the side surfaces of the linear gate structure. The semiconductor device also includes a gate contact disposed to electrically connect to the top surface of the linear gate structure. The gate contact has a substantially rectangular horizontal cross-section. Also, the gate contact is defined to substantially cover the width of the linear gate structure without extending substantially beyond either of the side surfaces of the gate structure.
Other aspects and advantages of the invention will become more apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.
Each gate structure 205 is defined as a linear gate structure having a central conductive region 219, a top region 217, and sidewall spacers 215. In various embodiments, the central conductive region 219 can be formed of polysilicon, metal, or essentially any other suitable electrically conductive material. The top region 217 is formed of an electrically conductive material that is capable of reflecting photons, such a those of incoherent light. For example, in one embodiment, the top region 217 is formed of NiSi2. In various embodiments, the sidewall spacers 215 can be formed of essentially any suitable material. For example, in one embodiment, the sidewall spacers 215 are formed of Si3N4.
Each gate structure 205 is defined as a linear gate structure having a top surface 222, substantially parallel side surfaces 220, a width 216 defined perpendicularly between the side surfaces 220, and a length 218 extending perpendicular to the width 216 along the top surface 222. In the exemplary wafer portion 200, for ease of description, each linear gate structure 205 is shown to have a length approximately equal to the length 218. However, it should be understood that the various gate structures 205 are not required to have the same length. For example, any number of the linear gate structures 205 may be segmented to include a number of breaks, depending on the circuit function to be defined.
Each linear gate structure 205, or segment thereof, is devoid of a substantial change in direction along its length. In one embodiment, a substantial change in direction of a linear gate structure 205, or segment thereof, exists when the width 216 of the linear gate structure 205 at any point thereon changes by more than 50% of the nominal width 216 of the linear gate structure 205 along its entire length. In another embodiment, a substantial change in direction of a linear gate structure 205, or segment thereof, exists when the width 216 of the linear gate structure 205 changes from any first location on the linear gate structure 205 to any second location on the linear gate structure 205 by more than 50% of the width 216 at the first location.
The exemplary wafer portion 200 further includes a number of active areas 203 for NMOS devices, as denoted by (n+), and a number of active areas 201 for PMOS devices, as denoted by (p+). As shown in the cross-section view A-A of
Additionally, the wafer portion 200 can include a thin, e.g., 200-300 angstroms thick, etch stop and/or stress liner conformally disposed over its top surface, i.e., conformally disposed over the upper exposed surfaces of the substrate 213, STI regions 209, active area regions 201/203, and gate structures 205. For clarity purposes, the etch stop and/or stress liner is not shown in
Although the wafer portion 200 provided for the SSA contact process has been described in some detail in
With reference back to
In various embodiments, the removal of the upper portion of the photon absorption layer 301 in operation 119 can be performed using an etching process, a chemical mechanical planarization (CMP) process, or a combination thereof. It should be understood that through operations 117 and 119, the photon absorption layer 301 is deposited between the gate structures 205 so as to substantially cover an area of the wafer portion 200 present between the gate structures 205 with the photon absorption layer 301, while leaving the top surface 222 of each gate structure 205 uncovered. In other words, following operation 119, the photon absorption layer 301 fills regions adjacent to each gate structure 205 so as to contact the side surfaces 220 of each gate structure 205 without covering the top surface 222 of each gate structure 205.
Following operation 119, an operation 121 is performed to deposit a dielectric layer 501, i.e., a pre-metal dielectric layer, over the wafer portion 200.
With reference back to
A negative photoresist material is characterized in that portions of the negative photoresist material that are sufficiently exposed to a light source will made insoluble, i.e., non-removable, in the presence of a developer solution, and underexposed portions of the negative photoresist material will be remain soluble, i.e., removable, in the presence of the developer solution. The negative photoresist layer 603 can be defined by essentially any type of negative photoresist material, e.g., photosensitive polymer, so long as the light exposure threshold for cross-linking of the negative photoresist material is suitable for use with a given light source, such that more than a forward exposure of the negative photoresist material to the given light source is required for cross-linking of the negative photoresist material. For example, the light exposure threshold of the negative photoresist material is such that a transmission of collimated, incoherent light from the given light source through an upper surface 605 of the negative photoresist layer 603 to a lower surface 607 of the negative photoresist layer 603, i.e., forward exposure, is not sufficient to cross-link the negative photoresist material.
However, the light exposure threshold of the negative photoresist material is such that the forward exposure of the negative photoresist material combined with a reflective exposure of the negative photoresist material, i.e., exposure to light reflected upward from below the lower surface 607 of the negative photoresist layer 603, is sufficient to cross-link the negative photoresist material. Also, the characteristics of the light, e.g., intensity, duration, wavelength, etc., incident upon the negative photoresist layer 603 can be controlled in conjunction with the light exposure threshold of the negative photoresist material such that a specific amount of reflective exposure of the negative photoresist material is required for cross-linking of the negative photoresist material. Additionally, it should be understood that the negative photoresist layer 603 can be deposited on the wafer portion 200 using essentially any photoresist deposition technique, such as spin-on deposition.
From the operation 125, the method proceeds with an operation 127 for exposing and developing the negative photoresist layer 603, so as to only leave negative photoresist portions that vertically overlie gate structures 205. In one embodiment, operation 125 is performed by uniformly exposing the negative photoresist layer 603 to vertically collimated, incoherent light, whereby the light passes through the negative photoresist layer 603 to be absorbed by the photon absorption layer 301, and to be reflected by the top surface 222/top region 217 of the gate structures 205.
Because both forward and reflected exposures of the negative photoresist layer 603 are required to cross-link the negative photoresist, only those portions of negative photoresist that vertically overlie the reflective top surfaces 222/top regions 217 of the gate structures will be cross-linked. Also, it should be appreciated that because the light is vertically collimated to be normally, i.e., perpendicularly, incident upon the top surfaces 222 of the gate structures 205, which are substantially horizontal, only those portions of the negative photoresist layer 603 that are located vertically over the gate structures 205 will be subjected to substantial reflective exposure of the light.
Following exposure of the negative photoresist layer 603 to the light, the negative photoresist layer 603 is developed to remove the non-cross-linked portions of the negative photoresist layer 603. In various embodiments, essentially any photoresist development technique suitable for use with the particular negative photoresist material can be utilized. For example, in one embodiment, an acid etch can be used to remove the non-cross-linked portions of the negative photoresist layer 603.
Following operation 127, the method proceeds with an operation 129 for removing portions of the first hard mask layer 601 that are not protected by the negative photoresist portions 603A, thereby forming the first hard mask portions 601A directly over the gate structures 205. In one embodiment, operation 129 is performed using a vertically biased etching process, such that the portions of the first hard mask layer 601 that are not protected by the negative photoresist portions 603A are removed in a substantially top-down manner. However, it should be understood that other techniques can be used to remove the portions of the first hard mask layer 601 that are not protected by the negative photoresist portions 603A, so long as a width 901 of the remaining first hard mask portions 601A substantially matches a width 903 of the negative photoresist portions 603A. In other words, undercutting of the first hard mask portions 601A relative to the negative photoresist portions 603A should be minimized to the extent possible.
Following the operation 129, the method proceed with an operation 131 for removing the remaining negative photoresist portions 603A. Removal of the remaining negative photoresist portions 603A can be performed using essentially any photoresist stripping technique, e.g., chemical stripping, ashing, etc.
With reference back to
The second hard mask layer 1101 can be defined by essentially any suitable hard mask material, so long as the second hard mask material is different from the first hard mask material used to form the first hard mask portions 601A. More specifically, the second hard mask material should have an etching selectivity different than that of the first hard mask material, such that the first hard mask material can be etched without substantially etching the second hard mask material. For example, in one embodiment, the second hard mask layer 1101 can be formed of a nitride material. Also, the second hard mask layer 1101 can be deposited on the wafer portion 200 using essentially any hard mask deposition technique. For example, in one embodiment, the second hard mask layer 1101 is conformally deposited using a chemical vapor deposition (CVD) process.
Following the operation 133, an operation 135 is performed to remove portions of the second hard mask layer 1101 to leave second hard mask filaments 1101A adjacent to the first hard mask portions 601A.
In one embodiment, the second hard mask filaments 1101A are formed by etching the second hard mask layer 1101, such that horizontal surfaces of the second hard mask layer 1101 are preferentially etched relative to the vertical surfaces of the second hard mask layer 1101. It should be understood, however, that other techniques can be utilized to form the second hard mask filaments 1101A from the second hard mask layer 1101, such that each second hard mask filament 1101A is formed as a hard mask spacer extending out from the sidewalls of the first hard mask portions 601A. Because the width 901 of a given first hard mask portion 601A is substantially equal to the width of the top surface 222 of the underlying gate structure 205, a combined width of the given first hard mask portion 601A and its adjoining second hard mask filaments 1101A is greater than the width of the underlying gate structure 205. Also, it should be understood that a perpendicular spacing 1205 between facing exposed side surfaces of a given pair of neighboring second hard mask filaments 1101A effectively defines a width of an active area contact to be formed between the given pair of neighboring second hard mask filaments 1101A. Therefore, because the first hard mask portion 601A vertically shadows the underlying gate structure 205, the width 1201 of each second hard mask filament effectively defines an active area contact-to-gate structure 205 spacing.
With reference back to
Following operation 137, an operation 139 is performed to pattern the positive photoresist layer 1301 with an active area contact mask. More specifically, the positive photoresist layer 1301 is patterned to include a substantially linear opening through the positive photoresist layer 1301, extending from one first hard mask portion 601A to a neighboring first hard mask portion 601A in a direction substantially perpendicular to the length of each of the neighboring first hard mask portions 601A. The patterning of the positive photoresist layer 1301 can be performed using essentially any conventional photolithography technique.
Also, it should be appreciated that because the active area contact is to be bounded by the second hard mask filaments 1101A in the linear openings 1401, and because the linear openings 1401 are “oversized” with respect to the distance between the sidewalls of the neighboring second hard mask filaments 1101A, there is some flexibility provided in the indexing of the active area contact mask to the wafer portion 200 when patterning the positive photoresist layer 1301. For example, if the linear opening 1401 is offset slightly in its direction of extent between the first hard mask portions 601A, the substantially rectangular area 1403 of exposed dielectric layer 501 will be unaffected.
Following the operation 139, the method proceeds with an operation 141 for etching passages 1501 for the active area contacts.
In one embodiment, a vertically biased etching process can be used to form the passages 1501 for the active area contacts. The passages 1501 are etched downward through the underlying portion of the dielectric layer 501, and the underlying portion of the photon absorption layer 301 to reach the conductive material, e.g., silicide, present at the top of the underlying active area, or to reach an etch stop layer present over the underlying active area. It should be understood that during the etching of the passages 1501 for the active area contacts, the second hard mask filaments 1101A are etched very slowly so as to not be substantially removed.
Following the operation 141, an operation 143 is performed to remove the patterned photoresist layer 1301 from the wafer portion 200.
With reference back to
Following operation 145, an operation 147 is performed to pattern the positive photoresist layer 1701 with a gate contact mask. More specifically, the positive photoresist layer 1701 is patterned to include a number of substantially linear openings through the positive photoresist layer 1701, each extending across a given first hard mask portion 601A and across portions of the two second hard mask filaments 1101A adjacent to the given first hard mask portion 601A. The substantially linear opening defined through the positive photoresist layer 1701 is oriented to extend in a direction substantially perpendicular to the length 218 of the underlying gate structure 205 over which the linear opening is defined. The patterning of the positive photoresist layer 1701 can be performed using essentially any conventional photolithography technique.
Following the operation 147, the method proceeds with an operation 149 for etching passages 1901 for the gate contacts.
In one embodiment, the passages 1901 for the gate contacts are etched in a substantially vertical manner, such that sidewalls of the passages 1901 extend in a substantially vertical manner downward from the periphery of the substantially rectangular areas 1803 of the exposed first hard mask portion 601A within the linear openings 1801. However, it should be understood that the sidewalls of the passages 1901 are not required to extend downward in a substantially vertical manner. For example, in one embodiment, the sidewalls of the passages 1901 can be slightly tapered, such that the rectangular opening of the given passage 1901 is slightly smaller at its bottom end relative to its top end. In one embodiment, a vertically biased etching process can be used to form the passages 1901 for the gate contacts. The passages 1901 are etched downward through the first hard mask portion 601A to reach the top surface 222 of the underlying gate structure 205, or to reach an etch stop layer present over the underlying gate structure 205.
Following the operation 149, an operation 151 is performed to remove the patterned photoresist layer 1701 from the wafer portion 200.
With reference back to
The method proceeds from operation 111 to an operation 113 in which active area contacts 2301 and gate contacts 2303 are disposed within the passages 1501 and 1901, respectively.
Following the operation 153, an operation 155 is performed to removal excess metal from the top of the wafer portion 200, so as to leave the top surface of the dielectric layer exposed 501 and the contact passages 1501 and 1901 filled with metal. For example, in the TiN liner/W fill embodiment, a CMP process can be used to perform operation 155 so as to remove the W fill layer and the TiN liner from the top surface of the dielectric layer 501.
While this invention has been described in terms of several embodiments, it will be appreciated that those skilled in the art upon reading the preceding specifications and studying the drawings will realize various alterations, additions, permutations and equivalents thereof. Therefore, it is intended that the present invention includes all such alterations, additions, permutations, and equivalents as fall within the true spirit and scope of the invention.
This application is a continuation application under 35 U.S.C. 120 of prior U.S. application Ser. No. 15/064,323, filed on Mar. 8, 2016, which is a continuation application under 35 U.S.C. 120 of prior U.S. application Ser. No. 14/566,249, filed on Dec. 10, 2014, issued as U.S. Pat. No. 9,281,371, on Mar. 8, 2016, which is a continuation application under 35 U.S.C. 120 of prior U.S. application Ser. No. 14/033,952, filed on Sep. 23, 2013, issued as U.S. Pat. No. 8,951,916, on Feb. 10, 2015, which is a divisional application under 35 U.S.C. 121 of prior U.S. application Ser. No. 11/956,305, filed Dec. 13, 2007, issued as U.S. Pat. No. 8,541,879, on Sep. 24, 2013. The disclosure of each above-identified patent application is incorporated herein by reference in its entirety for all purposes.
Number | Name | Date | Kind |
---|---|---|---|
3521242 | Katz | Jul 1970 | A |
4069493 | Bobenrieth | Jan 1978 | A |
4197555 | Uehara et al. | Apr 1980 | A |
4417161 | Uya | Nov 1983 | A |
4424460 | Best | Jan 1984 | A |
4575648 | Lee | Mar 1986 | A |
4602270 | Finegold | Jul 1986 | A |
4613940 | Shenton et al. | Sep 1986 | A |
4657628 | Holloway et al. | Apr 1987 | A |
4682202 | Tanizawa | Jul 1987 | A |
4745084 | Rowson et al. | May 1988 | A |
4780753 | Shinichi et al. | Oct 1988 | A |
4801986 | Chang et al. | Jan 1989 | A |
4804636 | Groover | Feb 1989 | A |
4812688 | Chu et al. | Mar 1989 | A |
4884115 | Michel et al. | Nov 1989 | A |
4890148 | Ikeda | Dec 1989 | A |
4928160 | Crafts | May 1990 | A |
4975756 | Haken et al. | Dec 1990 | A |
5005068 | Ikeda | Apr 1991 | A |
5047979 | Leung | Sep 1991 | A |
5057895 | Beasom | Oct 1991 | A |
5068603 | Mahoney | Nov 1991 | A |
5079614 | Khatakhotan | Jan 1992 | A |
5097422 | Corbin et al. | Mar 1992 | A |
5117277 | Yuyama et al. | May 1992 | A |
5121186 | Wong et al. | Jun 1992 | A |
5208765 | Turnbull | May 1993 | A |
5224057 | Igarashi | Jun 1993 | A |
5242770 | Chen et al. | Sep 1993 | A |
5268319 | Harari | Dec 1993 | A |
5298774 | Ueda et al. | Mar 1994 | A |
5313426 | Sakuma et al. | May 1994 | A |
5338963 | Klaasen | Aug 1994 | A |
5351197 | Upton et al. | Sep 1994 | A |
5359226 | DeJong | Oct 1994 | A |
5365454 | Nakagawa et al. | Nov 1994 | A |
5367187 | Yuen | Nov 1994 | A |
5378649 | Huang | Jan 1995 | A |
5396128 | Dunning et al. | Mar 1995 | A |
5420447 | Waggoner | May 1995 | A |
5461577 | Shaw et al. | Oct 1995 | A |
5471403 | Fujimaga | Nov 1995 | A |
5486717 | Kokubo | Jan 1996 | A |
5497334 | Russell et al. | Mar 1996 | A |
5497337 | Ponnapalli et al. | Mar 1996 | A |
5526307 | Lin et al. | Jun 1996 | A |
5536955 | Ali | Jul 1996 | A |
5545904 | Orbach | Aug 1996 | A |
5581098 | Chang | Dec 1996 | A |
5581202 | Yano et al. | Dec 1996 | A |
5612893 | Hao et al. | Mar 1997 | A |
5636002 | Garofalo | Jun 1997 | A |
5656861 | Godinho et al. | Aug 1997 | A |
5682323 | Pasch et al. | Oct 1997 | A |
5684311 | Shaw | Nov 1997 | A |
5684733 | Wu et al. | Nov 1997 | A |
5698873 | Colwell et al. | Dec 1997 | A |
5705301 | Garza et al. | Jan 1998 | A |
5717635 | Akatsu | Feb 1998 | A |
5723883 | Gheewalla | Mar 1998 | A |
5723908 | Fuchida et al. | Mar 1998 | A |
5740068 | Liebmann et al. | Apr 1998 | A |
5745374 | Matsumoto | Apr 1998 | A |
5754826 | Gamal | May 1998 | A |
5756385 | Yuan | May 1998 | A |
5764533 | deDood | Jun 1998 | A |
5774367 | Reyes et al. | Jun 1998 | A |
5780909 | Hayashi | Jul 1998 | A |
5789776 | Lancaster et al. | Aug 1998 | A |
5790417 | Chao et al. | Aug 1998 | A |
5796128 | Tran et al. | Aug 1998 | A |
5796624 | Sridhar et al. | Aug 1998 | A |
5798298 | Yang et al. | Aug 1998 | A |
5814844 | Nagata et al. | Sep 1998 | A |
5825203 | Kusunoki et al. | Oct 1998 | A |
5834851 | Ikeda et al. | Nov 1998 | A |
5838594 | Kojima | Nov 1998 | A |
5841663 | Sharma et al. | Nov 1998 | A |
5847421 | Yamaguchi | Dec 1998 | A |
5850362 | Sakuma et al. | Dec 1998 | A |
5852562 | Shinomiya et al. | Dec 1998 | A |
5858580 | Wang et al. | Jan 1999 | A |
5898194 | Gheewala | Apr 1999 | A |
5900340 | Reich et al. | May 1999 | A |
5905287 | Hirata | May 1999 | A |
5908827 | Sirna | Jun 1999 | A |
5915199 | Hsu | Jun 1999 | A |
5917207 | Colwell et al. | Jun 1999 | A |
5920486 | Beahm et al. | Jul 1999 | A |
5923059 | Gheewala | Jul 1999 | A |
5923060 | Gheewala | Jul 1999 | A |
5929469 | Mimoto et al. | Jul 1999 | A |
5930163 | Hara et al. | Jul 1999 | A |
5935763 | Caterer et al. | Aug 1999 | A |
5949101 | Aritome | Sep 1999 | A |
5973369 | Hayashi | Oct 1999 | A |
5973507 | Yamazaki | Oct 1999 | A |
5977305 | Wigler et al. | Nov 1999 | A |
5977574 | Schmitt et al. | Nov 1999 | A |
5984510 | Ali | Nov 1999 | A |
5998879 | Iwaki et al. | Dec 1999 | A |
6009251 | Ho et al. | Dec 1999 | A |
6026223 | Scepanovic et al. | Feb 2000 | A |
6026225 | Iwasaki | Feb 2000 | A |
6034433 | Beatty | Mar 2000 | A |
6037613 | Mariyama | Mar 2000 | A |
6037617 | Kumagai | Mar 2000 | A |
6044007 | Capodieci | Mar 2000 | A |
6054872 | Fudanuki et al. | Apr 2000 | A |
6063132 | DeCamp et al. | May 2000 | A |
6077310 | Yamamoto et al. | Jun 2000 | A |
6080206 | Tadokoro et al. | Jun 2000 | A |
6084255 | Ueda | Jul 2000 | A |
6084437 | Sako | Jul 2000 | A |
6091845 | Pierrat et al. | Jul 2000 | A |
6099584 | Arnold et al. | Aug 2000 | A |
6100025 | Wigler et al. | Aug 2000 | A |
6114071 | Chen et al. | Sep 2000 | A |
6144227 | Sato | Nov 2000 | A |
6159839 | Jeng et al. | Dec 2000 | A |
6166415 | Sakemi et al. | Dec 2000 | A |
6166560 | Ogura et al. | Dec 2000 | A |
6174742 | Sudhindranath et al. | Jan 2001 | B1 |
6182272 | Andreev et al. | Jan 2001 | B1 |
6194104 | Hsu | Feb 2001 | B1 |
6194252 | Yamaguchi | Feb 2001 | B1 |
6194912 | Or-Bach | Feb 2001 | B1 |
6207479 | Liew et al. | Mar 2001 | B1 |
6209123 | Maziasz et al. | Mar 2001 | B1 |
6230299 | McSherry et al. | May 2001 | B1 |
6232173 | Hsu et al. | May 2001 | B1 |
6240542 | Kapur | May 2001 | B1 |
6249902 | Igusa et al. | Jun 2001 | B1 |
6255600 | Schaper | Jul 2001 | B1 |
6255845 | Wong et al. | Jul 2001 | B1 |
6262487 | Igarashi et al. | Jul 2001 | B1 |
6269472 | Garza et al. | Jul 2001 | B1 |
6275973 | Wein | Aug 2001 | B1 |
6282696 | Garza et al. | Aug 2001 | B1 |
6291276 | Gonzalez | Sep 2001 | B1 |
6295224 | Chan et al. | Sep 2001 | B1 |
6297668 | Schober | Oct 2001 | B1 |
6297674 | Kono et al. | Oct 2001 | B1 |
6303252 | Lin | Oct 2001 | B1 |
6323117 | Noguchi | Nov 2001 | B1 |
6331733 | Or-Bach et al. | Dec 2001 | B1 |
6331791 | Huang | Dec 2001 | B1 |
6335250 | Egi | Jan 2002 | B1 |
6338972 | Sudhindranath et al. | Jan 2002 | B1 |
6347062 | Nii et al. | Feb 2002 | B2 |
6356112 | Tran et al. | Mar 2002 | B1 |
6359804 | Kuriyama et al. | Mar 2002 | B2 |
6370679 | Chang et al. | Apr 2002 | B1 |
6378110 | Ho | Apr 2002 | B1 |
6380592 | Tooher et al. | Apr 2002 | B2 |
6388296 | Hsu | May 2002 | B1 |
6393601 | Tanaka et al. | May 2002 | B1 |
6399972 | Masuda et al. | Jun 2002 | B1 |
6400183 | Yamashita et al. | Jun 2002 | B2 |
6408427 | Cong et al. | Jun 2002 | B1 |
6415421 | Anderson et al. | Jul 2002 | B2 |
6416907 | Winder et al. | Jul 2002 | B1 |
6417549 | Oh | Jul 2002 | B1 |
6421820 | Mansfield et al. | Jul 2002 | B1 |
6425112 | Bula et al. | Jul 2002 | B1 |
6425117 | Pasch et al. | Jul 2002 | B1 |
6426269 | Haffner et al. | Jul 2002 | B1 |
6436805 | Trivedi | Aug 2002 | B1 |
6445049 | Iranmanesh | Sep 2002 | B1 |
6445065 | Gheewala et al. | Sep 2002 | B1 |
6467072 | Yang et al. | Oct 2002 | B1 |
6469328 | Yanai et al. | Oct 2002 | B2 |
6470489 | Chang et al. | Oct 2002 | B1 |
6476493 | Or-Bach et al. | Nov 2002 | B2 |
6477695 | Gandhi | Nov 2002 | B1 |
6480032 | Aksamit | Nov 2002 | B1 |
6480989 | Chan et al. | Nov 2002 | B2 |
6482689 | Trivedi | Nov 2002 | B2 |
6492066 | Capodieci et al. | Dec 2002 | B1 |
6496965 | Van Ginneken et al. | Dec 2002 | B1 |
6504186 | Kanamoto et al. | Jan 2003 | B2 |
6505327 | Lin | Jan 2003 | B2 |
6505328 | van Ginneken et al. | Jan 2003 | B1 |
6507941 | Leung et al. | Jan 2003 | B1 |
6509952 | Govil et al. | Jan 2003 | B1 |
6514849 | Hui et al. | Feb 2003 | B1 |
6516459 | Sahouria | Feb 2003 | B1 |
6523156 | Cirit | Feb 2003 | B2 |
6525350 | Kinoshita et al. | Feb 2003 | B1 |
6536028 | Katsioulas et al. | Mar 2003 | B1 |
6543039 | Watanabe | Apr 2003 | B1 |
6553544 | Tanaka et al. | Apr 2003 | B2 |
6553559 | Liebmann et al. | Apr 2003 | B2 |
6553562 | Capodieci et al. | Apr 2003 | B2 |
6566720 | Aldrich | May 2003 | B2 |
6570234 | Gardner | May 2003 | B1 |
6571140 | Wewalaarachchi | May 2003 | B1 |
6571379 | Takayama | May 2003 | B2 |
6574786 | Pohlenz et al. | Jun 2003 | B1 |
6578190 | Ferguson et al. | Jun 2003 | B2 |
6583041 | Capodieci | Jun 2003 | B1 |
6588005 | Kobayashi et al. | Jul 2003 | B1 |
6590289 | Shively | Jul 2003 | B2 |
6591207 | Naya et al. | Jul 2003 | B2 |
6609235 | Ramaswamy et al. | Aug 2003 | B2 |
6610607 | Armbrust et al. | Aug 2003 | B1 |
6617621 | Gheewala et al. | Sep 2003 | B1 |
6620561 | Winder et al. | Sep 2003 | B2 |
6621132 | Onishi et al. | Sep 2003 | B2 |
6632741 | Clevenger et al. | Oct 2003 | B1 |
6633182 | Pileggi et al. | Oct 2003 | B2 |
6635935 | Makino | Oct 2003 | B2 |
6642744 | Or-Bach et al. | Nov 2003 | B2 |
6643831 | Chang et al. | Nov 2003 | B2 |
6650014 | Kariyazaki | Nov 2003 | B2 |
6661041 | Keeth | Dec 2003 | B2 |
6662350 | Fried et al. | Dec 2003 | B2 |
6664587 | Guterman et al. | Dec 2003 | B2 |
6673638 | Bendik et al. | Jan 2004 | B1 |
6675361 | Crafts | Jan 2004 | B1 |
6677649 | Minami et al. | Jan 2004 | B2 |
6687895 | Zhang | Feb 2004 | B2 |
6690206 | Rikino et al. | Feb 2004 | B2 |
6691297 | Misaka et al. | Feb 2004 | B1 |
6700405 | Hirairi | Mar 2004 | B1 |
6703170 | Pindo | Mar 2004 | B1 |
6709880 | Yamamoto et al. | Mar 2004 | B2 |
6714903 | Chu et al. | Mar 2004 | B1 |
6732334 | Nakatsuka | May 2004 | B2 |
6732338 | Crouse et al. | May 2004 | B2 |
6732344 | Sakamoto et al. | May 2004 | B2 |
6734506 | Oyamatsu | May 2004 | B2 |
6737199 | Hsieh | May 2004 | B1 |
6737318 | Murata et al. | May 2004 | B2 |
6737347 | Houston et al. | May 2004 | B1 |
6745372 | Cote et al. | Jun 2004 | B2 |
6745380 | Bodendorf et al. | Jun 2004 | B2 |
6749972 | Yu | Jun 2004 | B2 |
6750555 | Satomi et al. | Jun 2004 | B2 |
6760269 | Nakase et al. | Jul 2004 | B2 |
6765245 | Bansal | Jul 2004 | B2 |
6777138 | Pierrat et al. | Aug 2004 | B2 |
6777146 | Samuels | Aug 2004 | B1 |
6787469 | Houston et al. | Sep 2004 | B2 |
6787823 | Shibutani | Sep 2004 | B2 |
6789244 | Dasasathyan et al. | Sep 2004 | B1 |
6789246 | Mohan et al. | Sep 2004 | B1 |
6792591 | Shi et al. | Sep 2004 | B2 |
6792593 | Takashima et al. | Sep 2004 | B2 |
6794677 | Tamaki et al. | Sep 2004 | B2 |
6794914 | Sani et al. | Sep 2004 | B2 |
6795332 | Yamaoka et al. | Sep 2004 | B2 |
6795358 | Tanaka et al. | Sep 2004 | B2 |
6795952 | Stine et al. | Sep 2004 | B1 |
6795953 | Bakarian et al. | Sep 2004 | B2 |
6800883 | Furuya et al. | Oct 2004 | B2 |
6806180 | Cho | Oct 2004 | B2 |
6807663 | Cote et al. | Oct 2004 | B2 |
6809399 | Ikeda et al. | Oct 2004 | B2 |
6812574 | Tomita et al. | Nov 2004 | B2 |
6818389 | Fritze et al. | Nov 2004 | B2 |
6818929 | Tsutsumi et al. | Nov 2004 | B2 |
6819136 | Or-Bach | Nov 2004 | B2 |
6820248 | Gan | Nov 2004 | B1 |
6826738 | Cadouri | Nov 2004 | B2 |
6834375 | Stine et al. | Dec 2004 | B1 |
6835991 | Pell, III | Dec 2004 | B2 |
6841880 | Matsumoto et al. | Jan 2005 | B2 |
6850854 | Naya et al. | Feb 2005 | B2 |
6854096 | Eaton et al. | Feb 2005 | B2 |
6854100 | Chuang et al. | Feb 2005 | B1 |
6867073 | Enquist | Mar 2005 | B1 |
6871338 | Yamauchi | Mar 2005 | B2 |
6872990 | Kang | Mar 2005 | B1 |
6877144 | Rittman et al. | Apr 2005 | B1 |
6879511 | Dufourt | Apr 2005 | B2 |
6881523 | Smith | Apr 2005 | B2 |
6884712 | Yelehanka et al. | Apr 2005 | B2 |
6885045 | Hidaka | Apr 2005 | B2 |
6889370 | Kerzman et al. | May 2005 | B1 |
6897517 | Houdt | May 2005 | B2 |
6897536 | Nomura et al. | May 2005 | B2 |
6898770 | Boluki et al. | May 2005 | B2 |
6904582 | Rittman et al. | Jun 2005 | B1 |
6918104 | Pierrat et al. | Jul 2005 | B2 |
6920079 | Shibayama | Jul 2005 | B2 |
6921982 | Joshi et al. | Jul 2005 | B2 |
6922354 | Ishikura et al. | Jul 2005 | B2 |
6924560 | Wang et al. | Aug 2005 | B2 |
6928635 | Pramanik et al. | Aug 2005 | B2 |
6931617 | Sanie et al. | Aug 2005 | B2 |
6953956 | Or-Bach et al. | Oct 2005 | B2 |
6954918 | Houston | Oct 2005 | B2 |
6957402 | Templeton et al. | Oct 2005 | B2 |
6968527 | Pierrat | Nov 2005 | B2 |
6974978 | Possley | Dec 2005 | B1 |
6977856 | Tanaka et al. | Dec 2005 | B2 |
6978436 | Cote et al. | Dec 2005 | B2 |
6978437 | Rittman et al. | Dec 2005 | B1 |
6980211 | Lin et al. | Dec 2005 | B2 |
6992394 | Park | Jan 2006 | B2 |
6992925 | Peng | Jan 2006 | B2 |
6993741 | Liebmann et al. | Jan 2006 | B2 |
6994939 | Ghandehari et al. | Feb 2006 | B1 |
6998722 | Madurawe | Feb 2006 | B2 |
7003068 | Kushner et al. | Feb 2006 | B2 |
7009862 | Higeta et al. | Mar 2006 | B2 |
7016214 | Kawamata et al. | Mar 2006 | B2 |
7022559 | Barnak et al. | Apr 2006 | B2 |
7028285 | Cote et al. | Apr 2006 | B2 |
7041568 | Goldbach et al. | May 2006 | B2 |
7052972 | Sandhu et al. | May 2006 | B2 |
7053424 | Ono | May 2006 | B2 |
7063920 | Baba-Ali | Jun 2006 | B2 |
7064068 | Chou et al. | Jun 2006 | B2 |
7065731 | Jacques et al. | Jun 2006 | B2 |
7079413 | Tsukamoto et al. | Jul 2006 | B2 |
7079989 | Wimer | Jul 2006 | B2 |
7093208 | Williams et al. | Aug 2006 | B2 |
7093228 | Andreev et al. | Aug 2006 | B2 |
7103870 | Misaka et al. | Sep 2006 | B2 |
7105871 | Or-Bach et al. | Sep 2006 | B2 |
7107551 | de Dood et al. | Sep 2006 | B1 |
7115343 | Gordon et al. | Oct 2006 | B2 |
7115920 | Bernstein et al. | Oct 2006 | B2 |
7120882 | Kotani et al. | Oct 2006 | B2 |
7124386 | Smith et al. | Oct 2006 | B2 |
7126837 | Banachowicz et al. | Oct 2006 | B1 |
7132203 | Pierrat | Nov 2006 | B2 |
7137092 | Maeda | Nov 2006 | B2 |
7141853 | Campbell et al. | Nov 2006 | B2 |
7143380 | Anderson et al. | Nov 2006 | B1 |
7149999 | Kahng et al. | Dec 2006 | B2 |
7152215 | Smith et al. | Dec 2006 | B2 |
7155685 | Mori et al. | Dec 2006 | B2 |
7155689 | Pierrat et al. | Dec 2006 | B2 |
7159197 | Falbo et al. | Jan 2007 | B2 |
7174520 | White et al. | Feb 2007 | B2 |
7175940 | Laidig et al. | Feb 2007 | B2 |
7176508 | Joshi et al. | Feb 2007 | B2 |
7177215 | Tanaka et al. | Feb 2007 | B2 |
7183611 | Bhattacharyya | Feb 2007 | B2 |
7185294 | Zhang | Feb 2007 | B2 |
7188322 | Cohn et al. | Mar 2007 | B2 |
7194712 | Wu | Mar 2007 | B2 |
7200831 | Kitabayashi | Apr 2007 | B2 |
7200835 | Zhang et al. | Apr 2007 | B2 |
7202517 | Dixit et al. | Apr 2007 | B2 |
7205191 | Kobayashi | Apr 2007 | B2 |
7208794 | Hofmann et al. | Apr 2007 | B2 |
7214579 | Widdershoven et al. | May 2007 | B2 |
7219326 | Reed et al. | May 2007 | B2 |
7221031 | Ryoo et al. | May 2007 | B2 |
7225423 | Bhattacharya et al. | May 2007 | B2 |
7227183 | Donze et al. | Jun 2007 | B2 |
7228510 | Ono | Jun 2007 | B2 |
7231628 | Pack et al. | Jun 2007 | B2 |
7235424 | Chen et al. | Jun 2007 | B2 |
7243316 | White et al. | Jul 2007 | B2 |
7252909 | Shin et al. | Aug 2007 | B2 |
7257017 | Liaw | Aug 2007 | B2 |
7264990 | Rueckes et al. | Sep 2007 | B2 |
7266787 | Hughes et al. | Sep 2007 | B2 |
7269803 | Khakzadi et al. | Sep 2007 | B2 |
7278118 | Pileggi et al. | Oct 2007 | B2 |
7279727 | Ikoma et al. | Oct 2007 | B2 |
7287320 | Wang et al. | Oct 2007 | B2 |
7294534 | Iwaki | Nov 2007 | B2 |
7302651 | Allen et al. | Nov 2007 | B2 |
7308669 | Buehler et al. | Dec 2007 | B2 |
7312003 | Cote et al. | Dec 2007 | B2 |
7312144 | Cho | Dec 2007 | B2 |
7315994 | Aller et al. | Jan 2008 | B2 |
7327591 | Sadra et al. | Feb 2008 | B2 |
7329938 | Kinoshita | Feb 2008 | B2 |
7329953 | Tu | Feb 2008 | B2 |
7335583 | Chang | Feb 2008 | B2 |
7335966 | Ihme et al. | Feb 2008 | B2 |
7337421 | Kamat | Feb 2008 | B2 |
7338896 | Vanhaelemeersch et al. | Mar 2008 | B2 |
7345909 | Chang et al. | Mar 2008 | B2 |
7346885 | Semmler | Mar 2008 | B2 |
7350183 | Cui et al. | Mar 2008 | B2 |
7353492 | Gupta et al. | Apr 2008 | B2 |
7358131 | Bhattacharyya | Apr 2008 | B2 |
7360179 | Smith et al. | Apr 2008 | B2 |
7360198 | Rana et al. | Apr 2008 | B2 |
7366997 | Rahmat et al. | Apr 2008 | B1 |
7367008 | White et al. | Apr 2008 | B2 |
7376931 | Kokubun | May 2008 | B2 |
7383521 | Smith et al. | Jun 2008 | B2 |
7397260 | Chanda et al. | Jul 2008 | B2 |
7400627 | Wu et al. | Jul 2008 | B2 |
7402848 | Chang et al. | Jul 2008 | B2 |
7404154 | Venkatraman et al. | Jul 2008 | B1 |
7404173 | Wu et al. | Jul 2008 | B2 |
7411252 | Anderson et al. | Aug 2008 | B2 |
7421678 | Barnes et al. | Sep 2008 | B2 |
7423298 | Mariyama et al. | Sep 2008 | B2 |
7424694 | Ikeda | Sep 2008 | B2 |
7424695 | Tamura et al. | Sep 2008 | B2 |
7424696 | Vogel et al. | Sep 2008 | B2 |
7426710 | Zhang et al. | Sep 2008 | B2 |
7432562 | Bhattacharyya | Oct 2008 | B2 |
7434185 | Dooling et al. | Oct 2008 | B2 |
7441211 | Gupta et al. | Oct 2008 | B1 |
7442630 | Kelberlau et al. | Oct 2008 | B2 |
7444609 | Charlebois et al. | Oct 2008 | B2 |
7446352 | Becker et al. | Nov 2008 | B2 |
7449371 | Kemerling et al. | Nov 2008 | B2 |
7458045 | Cote et al. | Nov 2008 | B2 |
7459792 | Chen | Dec 2008 | B2 |
7465973 | Chang et al. | Dec 2008 | B2 |
7466607 | Hollis et al. | Dec 2008 | B2 |
7469396 | Hayashi et al. | Dec 2008 | B2 |
7480880 | Visweswariah et al. | Jan 2009 | B2 |
7480891 | Sezginer | Jan 2009 | B2 |
7484197 | Allen et al. | Jan 2009 | B2 |
7485934 | Liaw | Feb 2009 | B2 |
7487475 | Kriplani et al. | Feb 2009 | B1 |
7492013 | Correale, Jr. | Feb 2009 | B2 |
7500211 | Komaki | Mar 2009 | B2 |
7502275 | Nii et al. | Mar 2009 | B2 |
7503026 | Ichiryu et al. | Mar 2009 | B2 |
7504184 | Hung et al. | Mar 2009 | B2 |
7506300 | Sezginer et al. | Mar 2009 | B2 |
7508238 | Yamagami | Mar 2009 | B2 |
7509621 | Melvin, III | Mar 2009 | B2 |
7509622 | Sinha et al. | Mar 2009 | B2 |
7512017 | Chang | Mar 2009 | B2 |
7512921 | Shibuya | Mar 2009 | B2 |
7514355 | Katase | Apr 2009 | B2 |
7514959 | Or-Bach et al. | Apr 2009 | B2 |
7523429 | Kroyan et al. | Apr 2009 | B2 |
7527900 | Zhou et al. | May 2009 | B2 |
7535751 | Huang | May 2009 | B2 |
7538368 | Yano | May 2009 | B2 |
7543262 | Wang et al. | Jun 2009 | B2 |
7563701 | Chang et al. | Jul 2009 | B2 |
7564134 | Lee et al. | Jul 2009 | B2 |
7568174 | Sezginer et al. | Jul 2009 | B2 |
7569309 | Walter et al. | Aug 2009 | B2 |
7569310 | Wallace et al. | Aug 2009 | B2 |
7569894 | Suzuki | Aug 2009 | B2 |
7575973 | Mokhlesi et al. | Aug 2009 | B2 |
7592247 | Yang et al. | Sep 2009 | B2 |
7592676 | Nakanishi | Sep 2009 | B2 |
7598541 | Okamoto et al. | Oct 2009 | B2 |
7598558 | Hashimoto et al. | Oct 2009 | B2 |
7614030 | Hsu | Nov 2009 | B2 |
7625790 | Yang | Dec 2009 | B2 |
7632610 | Wallace et al. | Dec 2009 | B2 |
7640522 | Gupta et al. | Dec 2009 | B2 |
7646651 | Lee et al. | Jan 2010 | B2 |
7647574 | Haruki | Jan 2010 | B2 |
7653884 | Furnish et al. | Jan 2010 | B2 |
7665051 | Ludwig et al. | Feb 2010 | B2 |
7700466 | Booth et al. | Apr 2010 | B2 |
7712056 | White et al. | May 2010 | B2 |
7739627 | Chew et al. | Jun 2010 | B2 |
7749662 | Matthew et al. | Jul 2010 | B2 |
7755110 | Gliese et al. | Jul 2010 | B2 |
7770144 | Dellinger | Aug 2010 | B2 |
7781847 | Yang | Aug 2010 | B2 |
7791109 | Wann et al. | Sep 2010 | B2 |
7802219 | Tomar et al. | Sep 2010 | B2 |
7816740 | Houston | Oct 2010 | B2 |
7825437 | Pillarisetty et al. | Nov 2010 | B2 |
7842975 | Becker et al. | Nov 2010 | B2 |
7873929 | Kahng et al. | Jan 2011 | B2 |
7882456 | Zach | Feb 2011 | B2 |
7888705 | Becker et al. | Feb 2011 | B2 |
7898040 | Nawaz | Mar 2011 | B2 |
7906801 | Becker et al. | Mar 2011 | B2 |
7908578 | Becker et al. | Mar 2011 | B2 |
7910958 | Becker et al. | Mar 2011 | B2 |
7910959 | Becker et al. | Mar 2011 | B2 |
7917877 | Singh et al. | Mar 2011 | B2 |
7917879 | Becker et al. | Mar 2011 | B2 |
7923266 | Thijs et al. | Apr 2011 | B2 |
7923337 | Chang et al. | Apr 2011 | B2 |
7923757 | Becker et al. | Apr 2011 | B2 |
7926001 | Pierrat | Apr 2011 | B2 |
7932544 | Becker et al. | Apr 2011 | B2 |
7932545 | Becker et al. | Apr 2011 | B2 |
7934184 | Zhang | Apr 2011 | B2 |
7939443 | Fox et al. | May 2011 | B2 |
7943966 | Becker et al. | May 2011 | B2 |
7943967 | Becker et al. | May 2011 | B2 |
7948012 | Becker et al. | May 2011 | B2 |
7948013 | Becker et al. | May 2011 | B2 |
7952119 | Becker et al. | May 2011 | B2 |
7956421 | Becker | Jun 2011 | B2 |
7958465 | Lu et al. | Jun 2011 | B2 |
7962867 | White et al. | Jun 2011 | B2 |
7962878 | Melzner | Jun 2011 | B2 |
7962879 | Tang et al. | Jun 2011 | B2 |
7964267 | Lyons et al. | Jun 2011 | B1 |
7971160 | Osawa et al. | Jun 2011 | B2 |
7989847 | Becker et al. | Aug 2011 | B2 |
7989848 | Becker et al. | Aug 2011 | B2 |
7992122 | Burstein et al. | Aug 2011 | B1 |
7994583 | Inaba | Aug 2011 | B2 |
8004042 | Yang et al. | Aug 2011 | B2 |
8022441 | Becker et al. | Sep 2011 | B2 |
8030689 | Becker et al. | Oct 2011 | B2 |
8035133 | Becker et al. | Oct 2011 | B2 |
8044437 | Venkatraman et al. | Oct 2011 | B1 |
8058671 | Becker et al. | Nov 2011 | B2 |
8058690 | Chang | Nov 2011 | B2 |
8072003 | Becker et al. | Dec 2011 | B2 |
8072053 | Li | Dec 2011 | B2 |
8088679 | Becker et al. | Jan 2012 | B2 |
8088680 | Becker et al. | Jan 2012 | B2 |
8088681 | Becker et al. | Jan 2012 | B2 |
8088682 | Becker et al. | Jan 2012 | B2 |
8089098 | Becker et al. | Jan 2012 | B2 |
8089099 | Becker et al. | Jan 2012 | B2 |
8089100 | Becker et al. | Jan 2012 | B2 |
8089101 | Becker et al. | Jan 2012 | B2 |
8089102 | Becker et al. | Jan 2012 | B2 |
8089103 | Becker et al. | Jan 2012 | B2 |
8089104 | Becker et al. | Jan 2012 | B2 |
8101975 | Becker et al. | Jan 2012 | B2 |
8110854 | Becker et al. | Feb 2012 | B2 |
8129750 | Becker et al. | Mar 2012 | B2 |
8129751 | Becker et al. | Mar 2012 | B2 |
8129752 | Becker et al. | Mar 2012 | B2 |
8129754 | Becker et al. | Mar 2012 | B2 |
8129755 | Becker et al. | Mar 2012 | B2 |
8129756 | Becker et al. | Mar 2012 | B2 |
8129757 | Becker et al. | Mar 2012 | B2 |
8129819 | Becker et al. | Mar 2012 | B2 |
8130529 | Tanaka | Mar 2012 | B2 |
8134183 | Becker et al. | Mar 2012 | B2 |
8134184 | Becker et al. | Mar 2012 | B2 |
8134185 | Becker et al. | Mar 2012 | B2 |
8134186 | Becker et al. | Mar 2012 | B2 |
8138525 | Becker et al. | Mar 2012 | B2 |
8161427 | Morgenshtein et al. | Apr 2012 | B2 |
8178905 | Toubou | May 2012 | B2 |
8178909 | Venkatraman et al. | May 2012 | B2 |
8198656 | Becker et al. | Jun 2012 | B2 |
8207053 | Becker et al. | Jun 2012 | B2 |
8214778 | Quandt et al. | Jul 2012 | B2 |
8217428 | Becker et al. | Jul 2012 | B2 |
8225239 | Reed et al. | Jul 2012 | B2 |
8225261 | Hong et al. | Jul 2012 | B2 |
8245180 | Smayling et al. | Aug 2012 | B2 |
8247846 | Becker | Aug 2012 | B2 |
8253172 | Becker et al. | Aug 2012 | B2 |
8253173 | Becker et al. | Aug 2012 | B2 |
8258547 | Becker et al. | Sep 2012 | B2 |
8258548 | Becker et al. | Sep 2012 | B2 |
8258549 | Becker et al. | Sep 2012 | B2 |
8258550 | Becker et al. | Sep 2012 | B2 |
8258551 | Becker et al. | Sep 2012 | B2 |
8258552 | Becker et al. | Sep 2012 | B2 |
8258581 | Becker et al. | Sep 2012 | B2 |
8259286 | Maly | Sep 2012 | B2 |
8264007 | Becker et al. | Sep 2012 | B2 |
8264008 | Becker et al. | Sep 2012 | B2 |
8264009 | Becker et al. | Sep 2012 | B2 |
8264044 | Becker | Sep 2012 | B2 |
8274099 | Becker | Sep 2012 | B2 |
8283701 | Becker et al. | Oct 2012 | B2 |
8294212 | Wang et al. | Oct 2012 | B2 |
8316327 | Herold | Nov 2012 | B2 |
8356268 | Becker et al. | Jan 2013 | B2 |
8363455 | Rennie | Jan 2013 | B2 |
8378407 | Audzeyeu et al. | Feb 2013 | B2 |
8395224 | Becker et al. | Mar 2013 | B2 |
8402397 | Robles et al. | Mar 2013 | B2 |
8405163 | Becker et al. | Mar 2013 | B2 |
8422274 | Tomita et al. | Apr 2013 | B2 |
8436400 | Becker et al. | May 2013 | B2 |
8453094 | Kornachuk et al. | May 2013 | B2 |
8575706 | Becker et al. | Nov 2013 | B2 |
8667443 | Smayling et al. | Mar 2014 | B2 |
8701071 | Kornachuk et al. | Apr 2014 | B2 |
8735995 | Becker et al. | May 2014 | B2 |
8756551 | Becker et al. | Jun 2014 | B2 |
8836045 | Becker et al. | Sep 2014 | B2 |
8839162 | Amundson et al. | Sep 2014 | B2 |
8839175 | Smayling et al. | Sep 2014 | B2 |
8847329 | Becker et al. | Sep 2014 | B2 |
8863063 | Becker et al. | Oct 2014 | B2 |
8921896 | Becker et al. | Dec 2014 | B2 |
9006841 | Kumar | Apr 2015 | B2 |
9035359 | Becker | May 2015 | B2 |
9202779 | Kornachuk et al. | Dec 2015 | B2 |
9269423 | Sever | Feb 2016 | B2 |
9336344 | Smayling | May 2016 | B2 |
9425272 | Becker | Aug 2016 | B2 |
9425273 | Becker | Aug 2016 | B2 |
9443947 | Becker | Sep 2016 | B2 |
9633987 | Smayling | Apr 2017 | B2 |
9917056 | Smayling | Mar 2018 | B2 |
20010049813 | Chan et al. | Dec 2001 | A1 |
20020003270 | Makino | Jan 2002 | A1 |
20020015899 | Chen et al. | Feb 2002 | A1 |
20020024049 | Nii | Feb 2002 | A1 |
20020030510 | Kono et al. | Mar 2002 | A1 |
20020063582 | Rikino | May 2002 | A1 |
20020068423 | Park et al. | Jun 2002 | A1 |
20020079516 | Lim | Jun 2002 | A1 |
20020079927 | Katoh et al. | Jun 2002 | A1 |
20020149392 | Cho | Oct 2002 | A1 |
20020166107 | Capodieci et al. | Nov 2002 | A1 |
20020194575 | Allen et al. | Dec 2002 | A1 |
20030042930 | Pileggi et al. | Mar 2003 | A1 |
20030046653 | Liu | Mar 2003 | A1 |
20030061592 | Agrawal et al. | Mar 2003 | A1 |
20030088839 | Watanabe | May 2003 | A1 |
20030088842 | Cirit | May 2003 | A1 |
20030090924 | Nii | May 2003 | A1 |
20030103176 | Abe et al. | Jun 2003 | A1 |
20030106037 | Moniwa et al. | Jun 2003 | A1 |
20030107085 | Gudesen et al. | Jun 2003 | A1 |
20030117168 | Uneme et al. | Jun 2003 | A1 |
20030124847 | Houston et al. | Jul 2003 | A1 |
20030125917 | Rich et al. | Jul 2003 | A1 |
20030126569 | Rich et al. | Jul 2003 | A1 |
20030128565 | Tomita | Jul 2003 | A1 |
20030145288 | Wang et al. | Jul 2003 | A1 |
20030145299 | Fried et al. | Jul 2003 | A1 |
20030177465 | MacLean et al. | Sep 2003 | A1 |
20030178648 | Bansal | Sep 2003 | A1 |
20030185076 | Worley | Oct 2003 | A1 |
20030203287 | Miyagawa | Oct 2003 | A1 |
20030229868 | White et al. | Dec 2003 | A1 |
20030229875 | Smith et al. | Dec 2003 | A1 |
20040029372 | Jang et al. | Feb 2004 | A1 |
20040049754 | Liao et al. | Mar 2004 | A1 |
20040063038 | Shin et al. | Apr 2004 | A1 |
20040115539 | Broeke et al. | Jun 2004 | A1 |
20040139412 | Ito et al. | Jul 2004 | A1 |
20040145028 | Matsumoto et al. | Jul 2004 | A1 |
20040153979 | Chang | Aug 2004 | A1 |
20040161878 | Or-Bach et al. | Aug 2004 | A1 |
20040164360 | Nishida et al. | Aug 2004 | A1 |
20040169201 | Hidaka | Sep 2004 | A1 |
20040194050 | Hwang et al. | Sep 2004 | A1 |
20040196705 | Ishikura et al. | Oct 2004 | A1 |
20040229135 | Wang et al. | Nov 2004 | A1 |
20040232444 | Shimizu | Nov 2004 | A1 |
20040243966 | Dellinger | Dec 2004 | A1 |
20040245547 | Stipe | Dec 2004 | A1 |
20040262640 | Suga | Dec 2004 | A1 |
20050001271 | Kobayashi | Jan 2005 | A1 |
20050009312 | Butt et al. | Jan 2005 | A1 |
20050009344 | Hwang et al. | Jan 2005 | A1 |
20050012157 | Cho et al. | Jan 2005 | A1 |
20050044522 | Maeda | Feb 2005 | A1 |
20050055828 | Wang et al. | Mar 2005 | A1 |
20050076320 | Maeda | Apr 2005 | A1 |
20050087806 | Hokazono | Apr 2005 | A1 |
20050093147 | Tu | May 2005 | A1 |
20050101112 | Rueckes et al. | May 2005 | A1 |
20050110130 | Kitabayashi et al. | May 2005 | A1 |
20050135134 | Yen | Jun 2005 | A1 |
20050136340 | Baselmans et al. | Jun 2005 | A1 |
20050138598 | Kokubun | Jun 2005 | A1 |
20050156200 | Kinoshita | Jul 2005 | A1 |
20050185325 | Hur | Aug 2005 | A1 |
20050189604 | Gupta et al. | Sep 2005 | A1 |
20050189614 | Ihme et al. | Sep 2005 | A1 |
20050196685 | Wang et al. | Sep 2005 | A1 |
20050205894 | Sumikawa et al. | Sep 2005 | A1 |
20050212018 | Schoellkopf et al. | Sep 2005 | A1 |
20050224982 | Kemerling et al. | Oct 2005 | A1 |
20050229130 | Wu et al. | Oct 2005 | A1 |
20050251771 | Robles | Nov 2005 | A1 |
20050264320 | Chung et al. | Dec 2005 | A1 |
20050264324 | Nakazato | Dec 2005 | A1 |
20050266621 | Kim | Dec 2005 | A1 |
20050268256 | Tsai et al. | Dec 2005 | A1 |
20050274983 | Hayashi et al. | Dec 2005 | A1 |
20050278673 | Kawachi | Dec 2005 | A1 |
20050280031 | Yano | Dec 2005 | A1 |
20060036976 | Cohn | Feb 2006 | A1 |
20060038234 | Liaw | Feb 2006 | A1 |
20060050588 | Osada | Mar 2006 | A1 |
20060063334 | Donze et al. | Mar 2006 | A1 |
20060065893 | Jin et al. | Mar 2006 | A1 |
20060070018 | Semmler | Mar 2006 | A1 |
20060073694 | Chang | Apr 2006 | A1 |
20060084261 | Iwaki | Apr 2006 | A1 |
20060091550 | Shimazaki et al. | May 2006 | A1 |
20060095872 | McElvain | May 2006 | A1 |
20060101370 | Cui et al. | May 2006 | A1 |
20060112355 | Pileggi et al. | May 2006 | A1 |
20060113533 | Tamaki et al. | Jun 2006 | A1 |
20060113567 | Ohmori et al. | Jun 2006 | A1 |
20060120143 | Liaw | Jun 2006 | A1 |
20060121715 | Chang | Jun 2006 | A1 |
20060123376 | Vogel et al. | Jun 2006 | A1 |
20060125024 | Ishigaki | Jun 2006 | A1 |
20060131609 | Kinoshita et al. | Jun 2006 | A1 |
20060136848 | Ichiryu et al. | Jun 2006 | A1 |
20060146638 | Chang et al. | Jul 2006 | A1 |
20060151810 | Ohshige | Jul 2006 | A1 |
20060158270 | Gibet et al. | Jul 2006 | A1 |
20060170108 | Hiroi | Aug 2006 | A1 |
20060177744 | Bodendorf et al. | Aug 2006 | A1 |
20060181310 | Rhee | Aug 2006 | A1 |
20060195809 | Cohn et al. | Aug 2006 | A1 |
20060195810 | Morton | Aug 2006 | A1 |
20060197557 | Chung | Sep 2006 | A1 |
20060203530 | Venkatraman | Sep 2006 | A1 |
20060206854 | Barnes et al. | Sep 2006 | A1 |
20060223302 | Chang et al. | Oct 2006 | A1 |
20060248495 | Sezginer | Nov 2006 | A1 |
20060261417 | Suzuki | Nov 2006 | A1 |
20060277521 | Chen | Dec 2006 | A1 |
20060289861 | Correale, Jr. | Dec 2006 | A1 |
20070001304 | Liaw | Jan 2007 | A1 |
20070002617 | Houston | Jan 2007 | A1 |
20070004147 | Toubou | Jan 2007 | A1 |
20070007574 | Ohsawa | Jan 2007 | A1 |
20070038973 | Li et al. | Feb 2007 | A1 |
20070074145 | Tanaka | Mar 2007 | A1 |
20070094634 | Seizginer et al. | Apr 2007 | A1 |
20070101305 | Smith et al. | May 2007 | A1 |
20070105023 | Zhou et al. | May 2007 | A1 |
20070106971 | Lien et al. | May 2007 | A1 |
20070113216 | Zhang | May 2007 | A1 |
20070172770 | Witters et al. | Jul 2007 | A1 |
20070186196 | Tanaka | Aug 2007 | A1 |
20070196958 | Bhattacharya et al. | Aug 2007 | A1 |
20070204253 | Murakawa | Aug 2007 | A1 |
20070209029 | Ivonin et al. | Sep 2007 | A1 |
20070210391 | Becker et al. | Sep 2007 | A1 |
20070211521 | Kawasumi | Sep 2007 | A1 |
20070218685 | Sivakumar et al. | Sep 2007 | A1 |
20070234252 | Visweswariah et al. | Oct 2007 | A1 |
20070234262 | Uedi et al. | Oct 2007 | A1 |
20070241810 | Onda | Oct 2007 | A1 |
20070256039 | White | Nov 2007 | A1 |
20070257277 | Takeda et al. | Nov 2007 | A1 |
20070264758 | Correale | Nov 2007 | A1 |
20070274140 | Joshi et al. | Nov 2007 | A1 |
20070277129 | Allen et al. | Nov 2007 | A1 |
20070288882 | Kniffin et al. | Dec 2007 | A1 |
20070290361 | Chen | Dec 2007 | A1 |
20070294652 | Bowen | Dec 2007 | A1 |
20070297249 | Chang et al. | Dec 2007 | A1 |
20080001176 | Gopalakrishnan | Jan 2008 | A1 |
20080005712 | Charlebois et al. | Jan 2008 | A1 |
20080021689 | Yamashita et al. | Jan 2008 | A1 |
20080022247 | Kojima et al. | Jan 2008 | A1 |
20080046846 | Chew et al. | Feb 2008 | A1 |
20080073717 | Ha | Mar 2008 | A1 |
20080081472 | Tanaka | Apr 2008 | A1 |
20080082952 | O'Brien | Apr 2008 | A1 |
20080083991 | Yang et al. | Apr 2008 | A1 |
20080086712 | Fujimoto | Apr 2008 | A1 |
20080097641 | Miyashita et al. | Apr 2008 | A1 |
20080098334 | Pileggi et al. | Apr 2008 | A1 |
20080098341 | Kobayashi et al. | Apr 2008 | A1 |
20080099795 | Bernstein et al. | May 2008 | A1 |
20080127000 | Majumder et al. | May 2008 | A1 |
20080127029 | Graur et al. | May 2008 | A1 |
20080134128 | Blatchford et al. | Jun 2008 | A1 |
20080137051 | Maly | Jun 2008 | A1 |
20080144361 | Wong | Jun 2008 | A1 |
20080148216 | Chan et al. | Jun 2008 | A1 |
20080163141 | Scheffer et al. | Jul 2008 | A1 |
20080168406 | Rahmat et al. | Jul 2008 | A1 |
20080169868 | Toubou | Jul 2008 | A1 |
20080211028 | Suzuki | Sep 2008 | A1 |
20080216207 | Tsai | Sep 2008 | A1 |
20080244494 | McCullen | Oct 2008 | A1 |
20080251779 | Kakoschke et al. | Oct 2008 | A1 |
20080265290 | Nielsen et al. | Oct 2008 | A1 |
20080276105 | Hoberman et al. | Nov 2008 | A1 |
20080283910 | Dreeskornfeld et al. | Nov 2008 | A1 |
20080283925 | Berthold et al. | Nov 2008 | A1 |
20080285331 | Torok et al. | Nov 2008 | A1 |
20080308848 | Inaba | Dec 2008 | A1 |
20080308880 | Inaba | Dec 2008 | A1 |
20080315258 | Masuda et al. | Dec 2008 | A1 |
20090014811 | Becker et al. | Jan 2009 | A1 |
20090024974 | Yamada | Jan 2009 | A1 |
20090031261 | Smith et al. | Jan 2009 | A1 |
20090032898 | Becker et al. | Feb 2009 | A1 |
20090032967 | Becker et al. | Feb 2009 | A1 |
20090037864 | Becker et al. | Feb 2009 | A1 |
20090057780 | Wong et al. | Mar 2009 | A1 |
20090075485 | Ban et al. | Mar 2009 | A1 |
20090077524 | Nagamura | Mar 2009 | A1 |
20090085067 | Hayashi et al. | Apr 2009 | A1 |
20090087991 | Yatsuda et al. | Apr 2009 | A1 |
20090101940 | Barrows et al. | Apr 2009 | A1 |
20090106714 | Culp et al. | Apr 2009 | A1 |
20090155990 | Yanagidaira et al. | Jun 2009 | A1 |
20090159950 | Ishibashi | Jun 2009 | A1 |
20090181314 | Shyu et al. | Jul 2009 | A1 |
20090187871 | Cork | Jul 2009 | A1 |
20090206443 | Juengling | Aug 2009 | A1 |
20090224408 | Fox | Sep 2009 | A1 |
20090228853 | Hong et al. | Sep 2009 | A1 |
20090228857 | Kornachuk et al. | Sep 2009 | A1 |
20090235215 | Lavin | Sep 2009 | A1 |
20090273100 | Aton et al. | Nov 2009 | A1 |
20090280582 | Thijs et al. | Nov 2009 | A1 |
20090283921 | Wang | Nov 2009 | A1 |
20090302372 | Chang et al. | Dec 2009 | A1 |
20090319977 | Saxena et al. | Dec 2009 | A1 |
20100001321 | Becker et al. | Jan 2010 | A1 |
20100006897 | Becker et al. | Jan 2010 | A1 |
20100006898 | Becker et al. | Jan 2010 | A1 |
20100006899 | Becker et al. | Jan 2010 | A1 |
20100006900 | Becker et al. | Jan 2010 | A1 |
20100006901 | Becker et al. | Jan 2010 | A1 |
20100006902 | Becker et al. | Jan 2010 | A1 |
20100006903 | Becker et al. | Jan 2010 | A1 |
20100006947 | Becker et al. | Jan 2010 | A1 |
20100006948 | Becker et al. | Jan 2010 | A1 |
20100006950 | Becker et al. | Jan 2010 | A1 |
20100006951 | Becker et al. | Jan 2010 | A1 |
20100006986 | Becker et al. | Jan 2010 | A1 |
20100011327 | Becker et al. | Jan 2010 | A1 |
20100011328 | Becker et al. | Jan 2010 | A1 |
20100011329 | Becker et al. | Jan 2010 | A1 |
20100011330 | Becker et al. | Jan 2010 | A1 |
20100011331 | Becker et al. | Jan 2010 | A1 |
20100011332 | Becker et al. | Jan 2010 | A1 |
20100011333 | Becker et al. | Jan 2010 | A1 |
20100012981 | Becker et al. | Jan 2010 | A1 |
20100012982 | Becker et al. | Jan 2010 | A1 |
20100012983 | Becker et al. | Jan 2010 | A1 |
20100012984 | Becker et al. | Jan 2010 | A1 |
20100012985 | Becker et al. | Jan 2010 | A1 |
20100012986 | Becker et al. | Jan 2010 | A1 |
20100017766 | Becker et al. | Jan 2010 | A1 |
20100017767 | Becker et al. | Jan 2010 | A1 |
20100017768 | Becker et al. | Jan 2010 | A1 |
20100017769 | Becker et al. | Jan 2010 | A1 |
20100017770 | Becker et al. | Jan 2010 | A1 |
20100017771 | Becker et al. | Jan 2010 | A1 |
20100017772 | Becker et al. | Jan 2010 | A1 |
20100019280 | Becker et al. | Jan 2010 | A1 |
20100019281 | Becker et al. | Jan 2010 | A1 |
20100019282 | Becker et al. | Jan 2010 | A1 |
20100019283 | Becker et al. | Jan 2010 | A1 |
20100019284 | Becker et al. | Jan 2010 | A1 |
20100019285 | Becker et al. | Jan 2010 | A1 |
20100019286 | Becker et al. | Jan 2010 | A1 |
20100019287 | Becker et al. | Jan 2010 | A1 |
20100019288 | Becker et al. | Jan 2010 | A1 |
20100019308 | Chan et al. | Jan 2010 | A1 |
20100023906 | Becker et al. | Jan 2010 | A1 |
20100023907 | Becker et al. | Jan 2010 | A1 |
20100023908 | Becker et al. | Jan 2010 | A1 |
20100023911 | Becker et al. | Jan 2010 | A1 |
20100025731 | Becker et al. | Feb 2010 | A1 |
20100025732 | Becker et al. | Feb 2010 | A1 |
20100025733 | Becker et al. | Feb 2010 | A1 |
20100025734 | Becker et al. | Feb 2010 | A1 |
20100025735 | Becker et al. | Feb 2010 | A1 |
20100025736 | Becker et al. | Feb 2010 | A1 |
20100032722 | Becker et al. | Feb 2010 | A1 |
20100032723 | Becker et al. | Feb 2010 | A1 |
20100032724 | Becker et al. | Feb 2010 | A1 |
20100032726 | Becker et al. | Feb 2010 | A1 |
20100037194 | Becker et al. | Feb 2010 | A1 |
20100037195 | Becker et al. | Feb 2010 | A1 |
20100096671 | Becker et al. | Apr 2010 | A1 |
20100115484 | Frederick | May 2010 | A1 |
20100187609 | Moroz | Jul 2010 | A1 |
20100203689 | Bernstein et al. | Aug 2010 | A1 |
20100224943 | Kawasaki | Sep 2010 | A1 |
20100229140 | Werner et al. | Sep 2010 | A1 |
20100232212 | Anderson et al. | Sep 2010 | A1 |
20100252865 | Van Der Zanden | Oct 2010 | A1 |
20100252896 | Smayling | Oct 2010 | A1 |
20100264468 | Xu | Oct 2010 | A1 |
20100270681 | Bird et al. | Oct 2010 | A1 |
20100287518 | Becker | Nov 2010 | A1 |
20100301482 | Schultz et al. | Dec 2010 | A1 |
20110014786 | Sezginer | Jan 2011 | A1 |
20110016909 | Mirza et al. | Jan 2011 | A1 |
20110108890 | Becker et al. | May 2011 | A1 |
20110108891 | Becker et al. | May 2011 | A1 |
20110154281 | Zach | Jun 2011 | A1 |
20110207298 | Anderson et al. | Aug 2011 | A1 |
20110260253 | Inaba | Oct 2011 | A1 |
20110298025 | Haensch et al. | Dec 2011 | A1 |
20110317477 | Liaw | Dec 2011 | A1 |
20120012932 | Perng et al. | Jan 2012 | A1 |
20120118854 | Smayling | May 2012 | A1 |
20120131528 | Chen | May 2012 | A1 |
20120273841 | Quandt et al. | Nov 2012 | A1 |
20130097574 | Balabanov et al. | Apr 2013 | A1 |
20130200465 | Becker et al. | Aug 2013 | A1 |
20130200469 | Becker et al. | Aug 2013 | A1 |
20130207198 | Becker et al. | Aug 2013 | A1 |
20130207199 | Becker et al. | Aug 2013 | A1 |
20130254732 | Kornachuk et al. | Sep 2013 | A1 |
20140197543 | Kornachuk et al. | Jul 2014 | A1 |
20150249041 | Becker et al. | Sep 2015 | A1 |
20150270218 | Becker et al. | Sep 2015 | A1 |
20160079159 | Kornachuk et al. | Mar 2016 | A1 |
20160079276 | Becker et al. | Mar 2016 | A1 |
Number | Date | Country |
---|---|---|
0102644 | Jul 1989 | EP |
0788166 | Aug 1997 | EP |
1394858 | Mar 2004 | EP |
1670062 | Jun 2006 | EP |
1833091 | Aug 2007 | EP |
1730777 | Sep 2007 | EP |
2251901 | Nov 2010 | EP |
2860920 | Apr 2005 | FR |
58-182242 | Oct 1983 | JP |
58-215827 | Dec 1983 | JP |
61-182244 | Aug 1986 | JP |
S61-202451 | Sep 1986 | JP |
S62-047148 | Feb 1987 | JP |
S63-310136 | Dec 1988 | JP |
H01284115 | Nov 1989 | JP |
03-165061 | Jul 1991 | JP |
H05152937 | Jun 1993 | JP |
H05211437 | Aug 1993 | JP |
H05218362 | Aug 1993 | JP |
H07-153927 | Jun 1995 | JP |
2684980 | Jul 1995 | JP |
1995-302706 | Nov 1995 | JP |
09-282349 | Oct 1997 | JP |
1997-09289251 | Nov 1997 | JP |
10-116911 | May 1998 | JP |
1999-045948 | Feb 1999 | JP |
2000-164811 | Jun 2000 | JP |
2001-068558 | Mar 2001 | JP |
2001-168707 | Jun 2001 | JP |
2001-306641 | Nov 2001 | JP |
2002-026125 | Jan 2002 | JP |
2002-026296 | Jan 2002 | JP |
2002-184870 | Jun 2002 | JP |
2001-056463 | Sep 2002 | JP |
2002-258463 | Sep 2002 | JP |
2002-289703 | Oct 2002 | JP |
2001-272228 | Mar 2003 | JP |
2003-100872 | Apr 2003 | JP |
2003-264231 | Sep 2003 | JP |
2004-013920 | Jan 2004 | JP |
2004-200300 | Jul 2004 | JP |
2004-241529 | Aug 2004 | JP |
2004-342757 | Dec 2004 | JP |
2005-020008 | Jan 2005 | JP |
2003-359375 | May 2005 | JP |
2005-123537 | May 2005 | JP |
2005-135971 | May 2005 | JP |
2005-149265 | Jun 2005 | JP |
2005-183793 | Jul 2005 | JP |
2005-203447 | Jul 2005 | JP |
2005-268610 | Sep 2005 | JP |
2006-073696 | Mar 2006 | JP |
2005-114752 | Oct 2006 | JP |
2006-303022 | Nov 2006 | JP |
2007-012855 | Jan 2007 | JP |
2007-013060 | Jan 2007 | JP |
2007-043049 | Feb 2007 | JP |
2007-141971 | Jun 2007 | JP |
2010-141047 | Jun 2010 | JP |
2011-515841 | May 2011 | JP |
10-0417093 | Jun 1997 | KR |
10-1998-087485 | Dec 1998 | KR |
1998-0084215 | Dec 1998 | KR |
10-1999-0057943 | Jul 1999 | KR |
2000-0005660 | Jan 2000 | KR |
10-2000-0028830 | May 2000 | KR |
10-2002-0034313 | May 2002 | KR |
10-2002-0070777 | Sep 2002 | KR |
2003-0022006 | Mar 2003 | KR |
2004-0005609 | Jan 2004 | KR |
10-2005-0030347 | Mar 2005 | KR |
2005-0037965 | Apr 2005 | KR |
2006-0108233 | Oct 2006 | KR |
10-2007-0077162 | Jul 2007 | KR |
386288 | Apr 2000 | TW |
200423404 | Nov 2004 | TW |
200426632 | Dec 2004 | TW |
200534132 | Oct 2005 | TW |
200620017 | Jun 2006 | TW |
200630838 | Sep 2006 | TW |
200709309 | Mar 2007 | TW |
200709565 | Mar 2007 | TW |
200811704 | Mar 2008 | TW |
200947567 | Nov 2009 | TW |
WO 2005104356 | Nov 2005 | WO |
WO 2006014849 | Feb 2006 | WO |
WO 2006052738 | May 2006 | WO |
WO 2006090445 | Aug 2006 | WO |
WO 2007014053 | Feb 2007 | WO |
WO 2007063990 | Jun 2007 | WO |
WO 2007103587 | Sep 2007 | WO |
WO 2009054936 | Apr 2009 | WO |
Entry |
---|
U.S. Appl. No. 60/625,342, Pileggi et al, dated Nov. 4, 2004. |
Acar, et al., “A Linear-Centric Simulation Framework for Parametric Fluctuations”, 2002, IEEE, Carnegie Mellon University USA, pp. 1-8. |
Amazawa, et al., “Fully Planarized Four-Level Interconnection with Stacked VLAS Using CMP of Selective CVD-A1 and Insulator and its Application to Quarter Micron Gate Array LSIs”, 1995, IEEE, Japan, pp. 473-476. |
Axelrad et al. “Efficient Full-Chip Yield Analysis Methodology for OPC-Corrected VLSI Design”, 2000, International Symposium on Quality Electronic Design (ISQED). |
Balasinski et al. “Impact of Subwavelength CD Tolerance on Device Performance”, 2002, SPIE. |
Burkhardt, et al., “Dark Field Double Dipole Lithography (DDL) for Back-End-Of-Line Processes”, 2007, SPIE Proceeding Series, vol. 6520; 65200K. |
Capetti, et al., “Sub kl = 0.25 Lithography with Double Patterning Technique for 45nm Technology Node Flash Memory Devices at λ= 193nm”, 2007, SPIE Proceeding Series, vol. 6520; 65202K. |
Capodieci, L., et al., “Toward a Methodology for Manufacturability-Driven Design Rule Exploration,” DAC 2004, Jun. 7-11, 2004, San Diego, CA. |
Chandra, et al., “An Interconnect Channel Design Methodology for High Performance Integrated Circuits”, 2004, IEEE, Carnegie Mellon University, pp. 16. |
Cheng, et al., “Feasibility Study of Splitting Pitch Technology on 45nm Contact Patterning with 0.93 Na”, 2007, SPIE Proceeding Series, vol. 6520; 65202N. |
Chow, et al., “The Design of a SRAM-Based Field-Programmable Gate Array—Part II: Circuit Design and Layout”, 1999, IEEE, vol. 7 # 3 pp. 321-330. |
Clark et al. “Managing Standby and Active Mode Leakage Power in Deep Sub-Micron Design”, Aug. 9-11, 2004, ACM. |
Cobb et al. “Using OPC to Optimize for Image Slope and Improve Process Window”, 2003, SPIE. |
Devgan “Leakage Issues in IC Design: Part 3”, 2003, CCAD. |
DeVor, et al., “Statistical Quality Design and Control”, 1992, Macmillan Publishing Company, pp. 264-267. |
Dictionary.com, “channel,” in Collins English Dictionary—Complete & Unabridged 10th Edition. Source location: HarperCollins Publishers. http://dictionary.reference.com/browse/channel. Available: http://dictionary.reference.com. |
Dusa, et al. “Pitch Doubling Through Dual Patterning Lithography Challenges in Integration and Litho Budgets”, 2007, SPIE Proceeding Series, vol. 6520; 65200G. |
El-Gamal, “Fast, Cheap and Under Control: The Next Implementation Fabric”, Jun. 2-6, 2003, ACM Press, pp. 354-355. |
Firedberg, et al., “Modeling Within-Field Gate Length Spatial Variation for Process-Design Co-Optimization,” 2005 Proc. of SPIE vol. 5756, pp. 178-188. |
Frankel, “Quantum State Control Interference Lithography and Trim Double Patterning for 32-16nm Lithography”, 2007, SPIE Proceeding Series, vol. 6520; 65202L. |
Garg, et al. “ Lithography Driven Layout Design”, 2005, IEEE. |
Grobman et al. “Reticle Enhancement Technology Trends: Resource and Manufacturability Implications for the Implementation of Physical Designs” Apr. 1-4, 2001, ACM. |
Grobman et al. “Reticle Enhancement Technology: Implications and Challenges for Physical Design” Jun. 18-22, 2001, ACM. |
Gupta et al. “ Enhanced Resist and ETCH CD Control by Design Perturbation”, Oct. 4-7, 2006, Society of Photo-Optical Instrumentation Engineers. |
Gupta et al. “A Practical Transistor-Level Dual Threshold Voltage Assignment Methodology”, 2005, Sixth International Symposium on Quality Electronic Design (ISQED). |
Gupta et al. “Detailed Placement for Improved Depth of Focus and CD Control”, 2005, ACM. |
Gupta et al. “Joining the Design and Mask Flows for Better and Cheaper Masks”, Oct. 14-17, 2004, Society of Photo-Optical Instrumentation Engineers. |
Gupta et al. “Manufacturing-Aware Physical Design”, 2003, ACM. |
Gupta et al. “Selective Gate-Length Biasing for Cost-Effective Runtime Leakage Control”, Jun. 7-11, 2004, ACM. |
Gupta et al. “Wafer Topography-Aware Optical Proximity Correction for Better DOF Margin and CD Control”, Apr. 13-15, 2005, SPIE. |
Gupta, Puneet, et al., “Manufacturing-aware Design Methodology for Assist Feature Correctness,” 2005. |
Ha et al., “Reduction in the Mask Error Factor by Optimizing the Diffraction Order of a Scattering Bar in Lithography,” Journal of the Korean Physical Society, vol. 46, No. 5, May 2005, pp. 1213-1217. |
Hakko, et al., “Extension of the 2D-TCC Technique to Optimize Mask Pattern Layouts,” 2008 Proc. of SPIE vol. 7028, 11 pages. |
Halpin et al., “Detailed Placement with Net Length Constraints,” Publication Year 2003, Proceedings of the 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, pp. 22-27. |
Hayashida, et al., “Manufacturable Local Interconnect technology Fully Compatible with Titanium Salicide Process”, Jun. 11-12, 1991, VMIC Conference. |
Heng, et al., “A VLSI Artwork Legalization Technique Base on a New Criterion of Minimum Layout Perturbation”, 1997, ACM Press, pp. 116-121. |
Heng, et al., “Toward Through-Process Layout Quality Metrics”, Mar. 3-4, 2005, Society of Photo-Optical Instrumentation Engineers. |
Hu, et al., “Synthesis and Placement Flow for Gain-Based Programmable Regular Fabrics”, Apr. 6-9, 2003, ACM Press, pp. 197-203. |
Hur et al., “Mongrel: Hybrid Techniques for Standard Cell Placement,” Publication Year 2000, IEEE/ACM International Conference on Computer Aided Design, ICCAD-2000, pp. 165-170. |
Hutton, et al., “A Methodology for FPGA to Structured-ASIC Synthesis and Verification”, 2006, EDAA, pp. 64-69. |
Intel Core Microarchitecture White Paper “Introducing the 45 nm Next-Generation Intel Core Microarchitecture,” 2007, Intel Corporation. |
Jayakumar, et al., “A Metal and VIA Maskset Programmable VLSI Design Methodology using PLAs”, 2004, IEEE, pp. 590-594. |
Jhaveri, T. et al., Maximization of Layout Printability/Manufacturability by Extreme Layout Regularity, Proc. of the SPIE, Apr. 2006. |
Kang, S.M., Metal-Metal Matrix (M3) for High-Speed MOS VLSI Layout, IEEE Trans. on CAD, vol. CAD-6, No. 5, Sep. 1987. |
Kawashima, et al., “Mask Optimization for Arbitrary Patterns with 2D-TCC Resolution Enhancement Technique,” 2008 Proc. of SPIE vol. 6924, 12 pages. |
Kheterpal, et al., “Design Methodology for IC Manufacturability Based on Regular Logic-Bricks”, DAC, Jun. 13-17, 2005, IEEE/AMC, vol. 6520. |
Kheterpal, et al., “Routing Architecture Exploration for Regular Fabrics”, DAC, Jun. 7-11, 2004, ACM Press, pp. 204-207. |
Kim, et al., “Double Exposure Using 193nm Negative Tone Photoresist”, 2007, SPIE Proceeding Series, vol. 6520; 65202M. |
Kim, et al., “Issues and Challenges of Double Patterning Lithography in DRAM”, 2007, SPIE Proceeding Series, vol. 6520; 65200H. |
Koorapaty, et al., “Exploring Logic Block Granularity for Regular Fabrics”, 2004, IEEE, pp. 1-6. |
Koorapaty, et al., “Heterogeneous Logic Block Architectures for Via-Patterned Programmable Fabric”, 13th International Conference on Field Programmable Logic and Applications (FPL) 2003, Lecture Notes in Computer Science (LNCS), Sep. 2003, Springer-Verlag, vol. 2778, pp. 426-436. |
Koorapaty, et al., “Modular, Fabric-Specific Synthesis for Programmable Architectures”, 12th International Conference on Field Programmable Logic and Applications (FPL_2002, Lecture Notes in Computer Science (LNCS)), Sep. 2002, Springer-Verlag, vol. 2438 pp. 132-141. |
Kuh et al., “Recent Advances in VLSI Layout,” Publication Year 1990, Proceedings of the IEEE, vol. 78, Issue 2, pp. 237-263. |
Lavin et al. “Backend DAC Flows for “Restrictive Design Rules””, 2004, IEEE. |
Li, et al., “A Linear-Centric Modeling Approach to Harmonic Balance Analysis”, 2002, IEEE, pp. 1-6. |
Li, et al., “Nonlinear Distortion Analysis Via Linear-Centric Models”, 2003, IEEE, pp. 897-903. |
Liebmann et al., “Integrating DFM Components Into a Cohesive Design-To-Silicon Solution”, IBM Systems and Technology Group, b IBM Research, pp. 112. |
Liebmann et al., “Optimizing Style Options for Sub-Resolution Assist Features,” Proc. of Spie vol. 4346, 2001, pp. 141-152. |
Liebmann, et al., “High-Performance Circuit Design for the RET-Enabled 65nm Technology Node”, Feb. 26-27, 2004, SPIE Proceeding Series, vol. 5379 pp. 20-29. |
Liebmann, L. W., Layout Impact of Resolution Enhancement Techniques: Impediment or Opportunity?, International Symposium on Physical Design, 2003. |
Liu, et al., “Double Patterning with Multilayer Hard Mask Shrinkage for Sub-0.25 k1 Lithography”, 200, SPIE Proceeding Series, vol. 6520; 65202J. |
Mansfield et al., “Lithographic Comparison of Assist Feature Design Strategies,” Proc. of SPIE vol. 4000, 2000, pp. 63-76. |
Miller, “Manufacturing-Aware Design Helps Boost IC Yield”, Sep. 9, 2004, http://www.eetimes.com/showArticle.jhtml?articlelD=47102054. |
Mishra, P., et al., “FinFET Circuit Design,” Nanoelectronic Circuit Design, pp. 23-54, 2011. |
Mo, et al., “Checkerboard: a Regular Structure and its Synthesis, International Workshop on Logic and Synthesis”, 2003, Department of Electrical Engineering and Computer Sciences, UC Berkeley, California, pp. 1-7. |
Mo, et al., “Pla-Based Regular Structures and Their Synthesis”, 2003, Department of Electrical Engineering and Computer Sciences, IEEE, pp. 723-729. |
Mo, et al., “Regular Fabrics in Deep Sub-Micron Integrated-Circuit Design”, 2004, Kluwer Academic Publishers, Entire Book. |
Moore, Samuel K., “Intel 45-nanometer Penryn Processors Arrive,” Nov. 13, 2007, IEEE Spectrum, http://spectrum.ieee.org/semiconductors/design/intel-45nanometer-penryn-processors-arrive. |
Mutoh et al. “1-V Power Supply High-Speed Digital Circuit Technology with Multithreshold-Voltage CMOS”, 1995, IEEE. |
Op de Beek, et al., “Manufacturability issues with Double Patterning for 50nm half pitch damascene applications, using Relacs® shrink and corresponding OPC”, 2007, SPIE Proceeding Series, vol. 6520; 652001. |
Or-Bach, “Programmable Circuit Fabrics”, Sep. 18, 2001, e-ASIC, pp. 1-36. |
Otten, et al., “Planning for Performance”, DAC 1998, ACM Inc., pp. 122-127. |
Pack et al. “Physical & Timing Verification of Subwavelength-Scale Designs-Part I: Lithography Impact on MOSFETs”, 2003, SPIE. |
Pandini, et al., “Congestion-Aware Logic Synthesis”, 2002, IEEE, pp. 1-8. |
Pandini, et al., “Understanding and Addressing the Impact of Wiring Congestion During Technology Mapping”, ISPD Apr. 7-10, 2002, ACM Press, pp. 131-136. |
Patel, et al., “An Architectural Exploration of Via Patterned Gate Arrays, ISPD 2003”, Apr. 6, 2003, pp. 184-189. |
Pham, D., et al., “Finfet Device Junction Foi liation Challenges,” 2006 International Workshop on Junction Technology, pp. 73-77, Aug. 2006. |
Pileggi, et al., “Exploring Regular Fabrics to Optimize the Performance-Cost Trade-Offs, Proceedings of the 40th ACM/IEEE Design Automation Conference (DAC) 2003”, Jun. 2003, ACM Press, pp. 782-787. |
Poonawala, et al., “ILT for Double Exposure Lithography with Conventional and Novel Materials”, 2007, SPIE Proceeding Series, vol. 6520; 65202Q. |
Qian et al. “Advanced Physical Models for Mask Data Verification and Impacts on Physical Layout Synthesis” 2003. IEEE. |
Ran, et al., “An Integrated Design Flow for a Via-Configurable Gate Array”, 2004, IEEE, pp. 582-589. |
Ran, et al., “Designing a Via-Configurable Regular Fabric”, Custom Integrated Circuits Conference (CICC). Proceedings of the IEEE, Oct. 2004, Oct. 1, 2004, pp. 423-426. |
Ran, et al., “On Designing Via-Configurable Cell Blocks for Regular Fabrics” Proceedings of the Design Automation Conference (DAC) 2004, Jun. 2004, ACM Press, s 198-203. |
Ran, et al., “The Magic of a Via-Configurable Regular Fabric”, Proceedings of the IEEE International Conference on Computer Design (ICCD) Oct. 2004. |
Ran, et al., “Via-Configurable Routing Architectures and Fast Design Mappability Estimation for Regular Fabrics”, 2005, IEEE, pp. 25-32. |
Reis, et al., “Physical Design Methodologies for Performance Predictability and Manufacturability”, Apr. 14-16, 2004, ACM Press, pp. 390-397. |
Robertson, et al., “The Modeling of Double Patterning Lithographic Processes”, 2007, SPIE Proceeding Series, vol. 6520; 65200J. |
Rosenbluth, et al., “Optimum Mask and Source Patterns to Print a Given Shape,” 2001 Proc. of Spie vol. 4346, pp. 486-502. |
Rovner, “Design for Manufacturability in Via Programmable Gate Arrays”, May 2003, Graduate School of Carnegie Mellon University. |
Sengupta, “An Integrated Cad Framework Linking VLSI Layout Editors and Process Simulators”, 1998, Thesis for Rice University, pp. 1-101. |
Sengupta, et al., “An Integrated CAD Framework Linking VLSI Layout Editors and Process Simulators”, 1996, SPIE Proceeding Series, vol. 2726; pp. 244-252. |
Sherlekar, “Design Considerations for Regular Fabrics”, Apr. 18-21, 2004, ACM Press, pp. 97-102. |
Shi et al., “Understanding the Forbidden Pitch and Assist Feature Placement,” Proc. of SPIE vol. 4562, 2002, pp. 968-979. |
Smayling et al., “APF Pitch Halving for 22 nm Logic Cells Using Gridded Design Rules,” Proceedings of SPIE, USA, vol. 6925, Jan. 1, 2008, pp. 69251E1-69251E-7. |
Socha, et al., “Simultaneous Source Mask Optimization (SMO),” 2005 Proc. of SPIE vol. 5853, pp. 180-193. |
Sreedhar et al. “ Statistical Yield Modeling for Sub-Wavelength Lithography”, 2008, IEEE. |
Stapper, “Modeling of Defects in Integrated Circuit Photolithographic Patterns”, Jul. 1, 1984, IBM, vol. 28 # 4, pp. 461-475. |
Taylor, et al., “Enabling Energy Efficiency in Via-Patterned Gate Array Devices”, Jun. 7-11, 2004, ACM Press, pp. 874-877. |
Tian et al. “Model-Based Dummy Feature Placement for Oxide Chemical Mechanical Polishing Manufacturability” 2000, ACM. |
Tong, et al., “Regular Logic Fabrics for a Via Patterned Gate Array (VPGA), Custom Integrated Circuits Conference”, Sep. 2003, Proceedings of the IEEE, pp. 53-56. |
Vanleenhove, et al., “A Litho-Only Approach to Double Patterning”, 2007, SPIE Proceeding Series, vol. 6520; 65202F. |
Wang, et al., “Perfoiiiiance Optimization for Gridded-Layout Standard Cells”, 2004, vol. 5567 SPIE. |
Wang, J. et al., Standard Cell Layout with Regular Contact Placement, IEEE Trans. on Semicon. Mfg., vol. 17, No. 3, Aug. 2004. |
Webb, Clair, “45nm Design for Manufacturing,” Intel Technology Journal, vol. 12, Issue 2, Jun. 17, 2008, ISSN 1535-864X, pp. 121-130. |
Webb, Clair, “Layout Rule Trends and Affect upon CPU Design”, 2006, vol. 6156 SPIE. |
Wenren, et al., “The Improvement of Photolithographic Fidelity of Two-dimensional Structures Though Double Exposure Method”, 2007, SPIE Proceeding Series, vol. 6520; 652021. |
Wilcox, et al., “Design for Manufacturability: A Key to Semiconductor Manufacturing Excellence”, 1998, IEEE, pp. 308-313. |
Wong, et al., “Resolution Enhancement Techniques and Design for Manufacturability: Containing and Accounting for Variabilities in Integrated Circuit Creation,” J. Micro/Nanolith. MEMS MOEMS, Jul.-Sep 2007, vol. 6(3), 2 pages. |
Wu, et al., “A Study of Process Window Capabilities for Two-dimensional Structures under Double Exposure Condition”, 2007, SPIE Proceeding Series, vol. 6520; 652020. |
Xiong, et al., “The Constrained Via Minimization Problem for PCB and VLSI Design”, 1988, ACM Press/IEEE, pp. 573-578. |
Yamamaoto, et al., “New Double Exposure Technique without Alternating Phase Shift Mask”, 2007, SPIE Proceeding Series, vol. 6520; 652052P. |
Yamazoe, et al., “Resolution Enhancement by Aerial Image Approximation with 2D-TCC,” 2007 Proc. of Spie vol. 6730, 12 pages. |
Yang, et al., “Interconnection Driven VLSI Module Placement Based on Quadratic Programming and Considering Congestion Using LFF Principles”, 2004, IEEE, pp. 1243-1247. |
Yao, et al., “Multilevel Routing With Redundant Via Insertion”, Oct. 2006, IEEE, pp. 1148-1152. |
Yu, et al., “True Process Variation Aware Optical Proximity Correction with Variational Lithography Modeling and Model Calibration,” J. Micro/Nanolith. MEMS MOEMS, Jul.-Sep 2007, vol. 6(3), 16 pages. |
Zheng, et al.“Modeling and Analysis of Regular Symmetrically Structured Power/Ground Distribution Networks”, DAC, Jun. 10-14, 2002, ACM Press, pp. 395-398. |
Zhu, et al., “A Stochastic Integral Equation Method for Modeling the Rough Surface Effect on Interconnect Capacitance”, 2004, IEEE. |
Zhu, et al., “A Study of Double Exposure Process Design with Balanced Performance Parameters for Line/Space Applications”, 2007, SPIE Proceeding Series, vol. 6520; 65202H. |
Zuchowski, et al., “A Hybrid ASIC and FPGA Architecture”, 2003, IEEE, pp. 187-194. |
Alam, Syed M. et al., “A Comprehensive Layout Methodology and Layout-Specific Circuit Analyses for Three-Dimensional Integrated Circuits,” Mar. 21, 2002. |
Alam, Syed M. et al., “Layout-Specific Circuit Evaluation in 3-D Integrated Circuits,” May 2003. |
Aubusson, Russel, “Wafer-Scale Integration of Semiconductor Memory,” Apr. 1979. |
Bachtold, “Logic Circuits with Carbon,” Nov. 9, 2001. |
Baker, R. Jacob, “CMOS: Circuit Design, Layout, and Simulation (2nd Edition),” Nov. 1, 2004. |
Baldi et al., “A Scalable Single Poly EEPROM Cell for Embedded Memory Applications,” pp. 1-4, Fig. 1, Sep. 1997. |
Cao, Ke, “Design for Manufacturing (DFM) in Submicron VLSI Design,” Aug. 2007. |
Capodieci, Luigi, “From Optical Proximity Correction to Lithography-Driven Physical Design (1996-2006): 10 years of Resolution Enhancement Technology and the roadmap enablers for the next decade,” Proc. SPIE 6154, Optical Microlithography XIX, 615401, Mar. 20, 2006. |
Chang, Leland et al., “Stable SRAM Cell Design for the 32 nm Node and Beyond,” Jun. 16, 2005. |
Cheung, Peter, “Layout Design,” Apr. 4, 2004. |
Chinnery, David, “Closing the Gap Between ASIC & Custom: Tools and Techniques for High-Performance ASIC Design,” Jun. 30, 2002. |
Chou, Dyiann et al., “Line End Optimization through Optical Proximity Correction (OPC): A Case Study,” Feb. 19, 2006. |
Clein, Dan, “CMOS IC Layout: Concepts, Methodologies, and Tools,” Dec. 22, 1999. |
Cowell, “Exploiting Non-Uniform Access Time,” Jul. 2003. |
Das, Shamik, “Design Automation and Analysis of Three-Dimensional Integrated Circuits,” May 1, 2004. |
Dehaene, W. et al., “Technology-Aware Design of SRAM Memory Circuits,” Mar. 2007. |
Deng, Liang et al., “Coupling-aware Dummy Metal Insertion for Lithography,” p. 1, col. 2, 2007. |
Devoivre et al., “Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC),” 2002. |
Enbody, R. J., “Near-Optimal n-Layer Channel Routing,” 1986. |
Ferretti, Marcos et al., “High Performance Asynchronous ASIC Back-End Design Flow Using Single-Track Full-Buffer Standard Cells,” Apr. 23, 2004. |
Garg, Manish et al., “Litho-driven Layouts for Reducing Performance Variability,” p. 2, Figs. 2b-2c, May 23, 2005. |
Greenway, Robert et al., “32nm 1-D Regular Pitch SRAM Bitcell Design for Interference-Assisted Lithography,” 2008. |
Gupta et al., “Modeling Edge Placement Error Distribution in Standard Cell Library,” Feb. 23-24, 2006. |
Grad, Johannes et al., “A standard cell library for student projects,” Proceedings of the 2003 IEEE International Conference on Microelectronic Systems Education, Jun. 2, 2003. |
Hartono, Roy et al., “Active Device Generation for Automatic Analog Layout Retargeting Tool,” May 13, 2004. |
Hartono, Roy et al., “IPRAIL — Intellectual Property Reuse-based Analog IC Layout Automation,” Mar. 17, 2003. |
Hastings, Alan, “The Art of Analog Layout (2nd Edition),” Jul. 4, 2005. |
Hurata et al., “A Genuine Design Manufacturability Check for Designers,” 2006. |
Institute of Microelectronic Systems, “Digital Subsystem Design,” Oct. 13, 2006. |
Ishida, M. et al., “A Novel 6T-SRAM Cell Technology Designed with Rectangular Patterns Scalable beyond 0.18 pm Generation and Desirable for Ultra High Speed Operation,” 1998. |
Jakusovszky, “Linear IC Parasitic Element Simulation Methodology,” Oct. 1, 1993. |
Jangkrajarng, Nuttorn et al., “Template-Based Parasitic-Aware Optimization and Retargeting of Analog and RF Integrated Circuit Layouts,” Nov. 5, 2006. |
Kahng, Andrew B., “Design Optimizations DAC-2006 DFM Tutorial, part V),” 2006. |
Kang, Sung-Mo et al., “CMOS Digital Integrated Circuits Analysis & Design,” Oct. 29, 2002. |
Kottoor, Mathew Francis, “Development of a Standard Cell Library based on Deep Sub-Micron SCMOS Design Rules using Open Source Software (MS Thesis),” Aug. 1, 2005. |
Kubicki, “Intel 65nm and Beyond (or Below): IDF Day 2 Coverage (available at http://www.anandtech.com/show/1468/4),” Sep. 9, 2004. |
Kuhn, Kelin J., “Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOS,” p. 27, Dec. 12, 2007. |
Kurokawa, Atsushi et al., “Dummy Filling Methods for Reducing Interconnect Capacitance and Number of Fills, Proc. Of ISQED,” pp. 586-591, 2005. |
Lavin, Mark, “Open Access Requirements from RDR Design Flows,” Nov. 11, 2004. |
Liebmann, Lars et al., “Layout Methodology Impact of Resolution Enhancement Techniques,” pp. 5-6, 2003. |
Liebmann, Lars et al., “TCAD development for lithography resolution enhancement,” Sep. 2001. |
Lin, Chung-Wei et al., “Recent Research and Emerging Challenges in Physical Design for Manufacturability/Reliability,” Jan. 26, 2007. |
Mccullen, Kevin W., “Layout Techniques for Phase Correct and Gridded Wiring,” pp. 13, 17, Fig. 5, 2006. |
Mosis, “Design Rules Mosis Scalable CMOS (SCMOS) (Revision 8.00),” Oct. 4, 2004. |
Mosis, “Mosis Scalable CMOS (SCMOS) Design Rules (Revision 7.2).”. |
Muta et al., “Manufacturability-Aware Design of Standard Cells,” pp. 2686-2690, Figs. 3, 12, Dec. 2007. |
Na, Kee-Yeol et al., “A Novel Single Polysilicon EEPROM Cell With a Polyfinger Capacitor,” Nov. 30, 2007. |
Pan et al., “Redundant Via Enahnced Maze Routing for Yield Improvement,” 2005. |
Park, Tae Hong, “Characterization and Modeling of Pattern Dependencies in Copper Interconnects for Integrated Circuits,” Ph.D. Thesis, MIT, 2002. |
Patel, Chetan, “An Architectural Exploration of Via Patterned Gate Arrays (CMU Master's Project),” May 2003. |
Pease, R. Fabian et al., “Lithography and Other Patterning Techniques for Future Electronics,” 2008. |
Serrano, Diego Emilio, Pontificia Universidad Javeriana Facultad De Ingenieria, Departamento De Electronica, “Diseño De Multiplicador 4 X 8 en VLSI, Introduccion al VLSI,” 2006. |
Pramanik, “Impact of layout on variability of devices for sub 90nm technologies,” 2004. |
Pramanik, Dipankar et al., “Lithography-driven layout of logic cells for 65-nm node (SPIE Proceedings vol. 5042),” Jul. 10, 2003. |
Roy et al., “Extending Aggressive Low-K1 Design Rule Requirements for 90 and 65 Nm Nodes Via Simultaneous Optimization of Numerical Aperture, Illumination and Optical Proximity Correction,” J.Micro/Nanolith, MEMS MOEMS, 4(2), 023003, Apr. 26, 2005. |
Saint, Christopher et al., “IC Layout Basics: A Practical Guide,” Chapter 3, Nov. 5, 2001. |
Saint, Christopher et al., “IC Mask Design: Essential Layout Techniques,” 2002. |
Scheffer, “Physical CAD Changes to Incorporate Design for Lithography and Manufacturability,” Feb. 4, 2004. |
Smayling, Michael C., “Part 3: Test Structures, Test Chips, In-Line Metrology & Inspection,” 2006. |
Spence, Chris, “Full-Chip Lithography Simulation and Design Analysis: How OPC is changing IC Design, Emerging Lithographic Technologies IX,” May 6, 2005. |
Subramaniam, Anupama R., “Design Rule Optimization of Regular layout for Leakage Reduction in Nanoscale Design,” pp. 474-478, Mar. 24, 2008. |
Tang, C. W. et al., “A compact large signal model of LDMOS,” 2002. |
Taylor, Brian et al., “Exact Combinatorial Optimization Methods for Physical Design of Regular Logic Bricks,” Jun. 8, 2007. |
Tian, Ruiqi et al., “Dummy Feature Placement for Chemical-Mechanical Uniformity in a Shallow Trench Isolation Process,” IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems, vol. 21, No. 1, pp. 63-71, Jan. 2002. |
Tian, Ruiqi et al., “Proximity Dummy Feature Placement and Selective Via Sizing for Process Uniformity in a Trench-First-Via-Last Dual-Inlaid Metal Process,” Proc. of IITC, pp. 48-50, 2001. |
Torres, J. A. et al., “RET Compliant Cell Generation for sub-130nm Processes,” 2002. |
Uyemura, John P., “Introduction to VLSI Circuits and Systems,” Chapters 2, 3, 5, and Part 3, 2002. |
Uyemura, John, “Chip Design for Submicron VLSI: CMOS Layout and Simulation,” Chapters 2-5, 7-9, Feb. 8, 2005. |
Verhaegen et al., “Litho Enhancements for 45nm-nod MuGFETs,” Aug. 1, 2005. |
Wong, Ban P., “Bridging the Gap between Dreams and Nano-Scale Reality (DAC-2006 DFM Tutorial),” 2006. |
Wang, Dunwei et al., “Complementary Symmetry Silicon Nanowire Logic: Power-Efficient Inverters with Gain,” 2006. |
Wang, Jun et al., “Effects of grid-placed contacts on circuit performance,” pp. 135-139, Figs. 2, 4-8, Feb. 28, 2003. |
Wang, Jun et al., “Standard cell design with regularly placed contacts and gates (SPIE vol. 5379),” 2004. |
Wang, Jun et al., “Standard cell design with resolution-enhancement-technique-driven regularly placed contacts and gates,” J. Micro/Nanolith, MEMS MOEMS, 4(1), 013001, Mar. 16, 2005. |
Watson, Bruce, “Challenges and Automata Applications in Chip-Design Software,” pp. 38-40, 2007. |
Weste, Neil et al., “CMOS VLSI Design: A Circuits and Systems Perspective, 3rd Edition,” May 21, 2004. |
Wingerden, Johannes van, “Experimental verification of improved printability for litho-driven designs,” Mar. 14, 2005. |
Wong, Alfred K., “Microlithography: Trends, Challenges, Solutions and Their Impact on Design,” 2003. |
Xu, Gang, “Redundant-Via Enhanced Maze Routing for Yield Improvement,” 2005. |
Yang, Jie, “Manufacturability Aware Design,” pp. 93, 102, Fig. 5.2, 2007. |
Yongshun, Wang et al., “Static Induction Devices with Planar Type Buried Gate,” 2004. |
Zobrist, George (editor), “Progress in Computer Aided VLSI Design: Implementations (Ch. 5),” 1990. |
Petley, Graham, “VLSI and ADIC Technology Standard Cell Library Design,” from website www.vlsitechnology.org, Jan. 11, 2005. |
Liebmann, Lars, et al., “Layout Optimization at the Pinnacle of Optical Lithography,” Design and Process Integration for Microelectronic Manufacturing II, Proceedings of SPIE vol. 5042, Jul. 8, 2003. |
Kawasaki, H., et al., “Challenges and Solutions of FinFET Integration in an SRAM Cell and a Logic Circuit for 22 nm node and beyond,” Electron Device Meeting (IEDM), 2009 IEEE International, IEEE, Piscataway, NJ, USA, Dec. 7, 2009, pp. 1-4. |
Intel Corporation v. Tela Innovations, Inc., “Complaint for Declaratory Judgment of Non-Infringement and Unenforceability, Demand for Jury Trial,” Case No. 3:18/2848, dated May 15, 2018. |
Uyemura, John P., “Introduction to VLSI Circuits and Systems,” 2002, John Wiley & Sons, Inc., pp. 67-69. |
International Technology Roadmap for Semiconductors (ITRS) 2005 Edition, Lithography, Aug. 21, 2005. |
M. Fritze et al., “Dense Only Phase Shift Template Lithography,” SPIE Design and Process Integration for Microelectronic Manufacturing II, Proceedings of SPIE vol. 5042, Jul. 10, 2003. |
M. Fritze et al., “Gratings of Regular Arrays and Trim Exposures for Ultralarge Scale Integrated Circuit Phase-Shift Lithography,” J. Vac. Sci. Technol. B 19(6), 2366, Nov./Dec. 2001. |
R. Maziasz and J. Hayes, “Layout Minimization of CMOS Cells,” Kluwer Academic Publishers, 1992, Second Printing 2000. |
M. Fritze et al., “Hybrid Optical Maskless Lithography: Scaling Beyond the 45 nm Node,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 23, 2743 (2005). |
H. Ohta et al., High Performance 30 nm Gate Bulk CMOS for 45 nm Node with Σ-shaped SiGe-SD, IEEE, 2005. |
S. Sankaran et al., “A 45 nm CMOS node Cu/Low-k/Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology,” 2006. |
T. Sugii, “High-performance bulk CMOS technology for 65/45 nm nodes,” Solid-State Electronics 50 (2006) 2-9, Oct. 10, 2005. |
J. Watkins et al., “Fabrication of Sub 45-nm Structures for the Next Generation of Devices: A Lot of Effort for a Little Device,” MRS Bulletin, vol. 30, Dec. 2005. |
S. Wolf, “Microchip Manufacturing,” Lattice Press, 2004. |
J. Rabaey et al., Digital Integrated Circuits: A Design Perspective, Second Edition, Pearson Education, Inc., 2003, 1996. |
Sedra et al., Excerpt from “Microelectronic Circuits, Fifth Edition,” Oxford University Press, Inc., 2004. |
D. Hodges, “Analysis and Design of Digital Integrated Circuits, Third Edition,” McGraw-Hill, New York, 2004. |
R. Geiger et al., “VLSI Design Techniques for Analog and Digital Circuits,” McGraw-Hill, New York, 1990. |
R. Greenway et al., “Interference Assisted Lithography for Patterning of 1D Gridded Design,” Alternative Lithographic Technologies, Proceedings of SPIE vol. 7271, 72712U, Mar. 18, 2009. |
X. Chen et al., “A Cost Effective 32 nm High-K/Metal Gate CMOS Technology for Low Power Applications with Single-Metal/Gate-First Process,” 2008 Symposium on VLSI Technology Digest of Technical Papers, IEEE, 2008. |
Intel News Release, “Intel First to Demonstrate Working 45nm Chips,” Jan. 25, 2006. |
Bohr, M., “Intel First to Demonstrate Working 45nm Chips,” Presentation, Jan. 2006. |
K. Mistry et al., “A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging,” IEEE (2007) at 247-250. |
C. Auth, “45nm High-K+Metal Gate Strain-Enhanced Transistors,” Intel Tech. J., vol. 12 No. 2 (2008) at 77-85. |
Intel News Release, “Chip Shot: Peek Inside Intel's New 45nm Factory,” Nov. 8, 2007. |
Intel Core™2 Extreme and Intel Xeon Processor Specs and Pricing, Nov. 12, 2007. |
D. Scansen, “Under the Hood: 45 nm: What Intel Didn't Tell You,” EE Times, Jan. 21, 2008. |
D. James, “Intel's Other IEDM Paper—Part 2,” posted on Chipworks blog and published in Solid State Technology magazine, Mar. 4, 2008. |
Intel Corporation v. Tela Innovations, Inc., “ Second Amended Complaint for Declaratory Judgment of Non-Infringement and Unenforceability, Demand for Jury Trial,” Case No. 18-cv-02848-WHO, dated Mar. 15, 2019. |
Number | Date | Country | |
---|---|---|---|
20180083003 A1 | Mar 2018 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 11956305 | Dec 2007 | US |
Child | 14033952 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 15064323 | Mar 2016 | US |
Child | 15811538 | US | |
Parent | 14566249 | Dec 2014 | US |
Child | 15064323 | US | |
Parent | 14033952 | Sep 2013 | US |
Child | 14566249 | US |