Claims
- 1. In the manufacture of a printed circuit board or chip carrier, a method of removing localized surface defects from an essentially continuous layer of metal on a dielectric substrate wherein said surface defects are localized and distributed about said metal layer and extend upwardly from an exposed surface of said metal comprising the steps of;
- providing a polishing head having a surface material thereon in which abrasive particles are embedded,
- continuously moving said polishing head with said polishing head in contact with the said defects,
- moving said substrate past said head, and
- continuously supplying a chemical etchant essentially free of abrasive material to the interface between the head and the defects to thereby reduce the height of said defects to the level of the exposed surface.
- 2. The method of claim 1 wherein said metal layer is copper.
- 3. The method of claim 2 wherein said etchant is cupric chloride and hydrochloric acid.
- 4. The method of claim 1 wherein the substrate is passed with the metal in contact with a head a plurality of times.
- 5. The method as defined in claim 1 wherein said defects are generated at least in part by mechanical drilling of holes through said substrate and said layer of metal.
- 6. The method of claim 1 wherein said abrasive particles are from about 5.mu. to about 15.mu. in size.
- 7. The method as defined in claim 6 wherein said abrasive is about 5.mu. in size.
- 8. The method as defined in claim 6 wherein said abrasive is about 15.mu. in size.
- 9. The method as defined in claim 2 wherein said defects are the result of plating of said copper metal.
- 10. The method as defined in claim 9 wherein said particles are about 15.mu. in size.
- 11. The method of claim 9 wherein said substrate is passed with the copper in contact with the head a plurality of times.
- 12. The method of claim 11 wherein said abrasive particles in said polishing head are about 15.mu. in size for the first time of contact of the metal with the head and about 5.mu. in size for the last time of contact of the metal with the head.
RELATED APPLICATIONS
The present application is a Continuation-in-Part of application Ser. No. 08/704,193, filed Aug. 28, 1996, entitled "Method and Apparatus for Polishing Metal Surfaces" (Attorney Docket No. EN9-96-014) now U.S. Pat. No. 5,759,427; and is related to application Ser. No. 08/495,277, filed Jun. 27, 1995, entitled "Method of Producing Fine-Line Circuit Boards Using Chemical Polishing (Attorney Docket No. EN9-95-021).
US Referenced Citations (17)
Foreign Referenced Citations (3)
Number |
Date |
Country |
7-183518 |
Jul 1995 |
JPX |
7-230973 |
Aug 1995 |
JPX |
197706 |
Jun 1977 |
SUX |
Non-Patent Literature Citations (1)
Entry |
"Planarization of Films Used in IC Fabrication by Laser-Induced Chemical Etching," C.J. Hendricks, IBM Technical Disclosure Bulletin, vol. 26, No. 10B, Mar., 1984. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
704193 |
Aug 1996 |
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