Patent Application
20200071828
Integrated circuits are typically manufactured by an elaborate process in which various layers of materials are sequentially constructed in a predetermined arrangement on a semiconductor substrate.
Some embodiments herein relate to semiconductor fabrication, and methods and apparatuses for deposition of thin films, for example using atomic layer deposition. A thin film can be deposited on a substrate using two or more stations that each provide a different reactant at a different temperature, and are in gas isolation from each other.
In some aspects, a method for thin film deposition is provided. The method can comprise (a) placing a first substrate in a first station that is capable of being in gas isolation from a second station. The method can comprise (b) contacting the first substrate in the first station with a first reactant at a first temperature and substantially in the absence of a second reactant and while the first station is in gas isolation from a second station, in which said contacting with the first reactant forms a layer of the first reactant on the first substrate. The method can comprise (c) after contacting the first substrate in the first station with the first reactant, placing the first substrate in a second station. The method can comprise (d) contacting the first substrate in the second station with a second reactant at a second temperature and substantially in the absence of the first reactant and while the second station is in gas isolation from the first station, in which the second reactant is different from the first reactant and reacts with the layer of the first reactant on the first substrate, in which the second temperature is different from the first temperature. The method can comprise repeating (a)-(d) until a film of desired thickness is deposited on the first substrate. In some embodiments, the first station is maintained at the first temperature while the second station is maintained at the second temperature during (d). In some embodiments, a film of at least about 1 nm is deposited, for example 1 nm, 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 60, 70, 80, 90, or 100 nm, including ranges between any two of the listed values, for example 1 nm-100 nm, 1 nm-20 nm, 1 nm-10 nm, 1 nm-5 nm, 2 nm-100 nm, 2 nm-20 nm, 2 nm-10 nm, 2 nm-5 nm, 3-4 nm, 5 nm-100 nm, 5 nm-20 nm, 5 nm-10 nm, 10 nm-100 nm, or 10 nm-20 nm. In some embodiments, no reactant other than the first reactant is provided to the first station, and wherein no reactant other than the second reactant is provided to the second station. In some embodiments, each surface of the first station is substantially free of the second reactant throughout the method, and wherein each surface of the second station is substantially free of the first reactant throughout the method. In some embodiments, the first reactant forms the layer of the first reactant on the first substrate more efficiently at the first temperature than at the second temperature. In some embodiments, the deposition comprises atomic layer deposition (ALD). In some embodiments, contacting with the first reactant forms no more than one monolayer of the first reactant on the first substrate. In some embodiments, contacting the first substrate in the second station with a second reactant at the second temperature comprises introducing the second reactant through a showerhead that is heated to the second temperature. In some embodiments, the first station is maintained at the first temperature and the second station is maintained at the second temperature while introducing the second reactant through the showerhead that is heated to the second temperature. In some embodiments, the first station is maintained at the first temperature and the second station is maintained at the first temperature while introducing the second reactant through the showerhead that is heated to the second temperature. In some embodiments, the second temperature is greater than the first temperature. In some embodiments, the second temperature is less than the first temperature. In some embodiments, the first substrate is placed in the second station on a susceptor having a lower mass than the first substrate. In some embodiments, the first substrate is placed in the second station on a susceptor that is heated or cooled to the second temperature after the first substrate is placed thereon. In some embodiments, at least one solid material provides gas isolation between the first and second stations. In some embodiments, the first reactant is provided into the first station at a different time than the second reactant is provided into the second station. In some embodiments, the first reactant is provided into the first station after the first substrate is placed in the first station, and the second reactant is provided into the second station after the first substrate is placed in the second station. In some embodiments, a spider places the first substrate in the first station, and places the first substrate in the second station. In some embodiments, after the spider places the first substrate in each station, the spider is retracted from the station so that the spider is not contacted by any reactant. In some embodiments, the deposition comprises selective ALD, in which the substrate comprises a first surface and a second surface that is different from the first surface, in which the first reactant is selectively adsorbed on the first surface relative to the second surface, in which the second reactant does not react with the second surface, and in which the film of desired thickness is selectively deposited on the first surface relative to the second surface. In some embodiments, the method further comprises, while the first substrate is not present in the first station, placing a second substrate in the first station, contacting the second substrate in the first station with the first reactant at the first temperature and substantially in the absence of the second reactant, such that the first reactant reacts with the second substrate such that no more than one monolayer of the first reactant is adsorbed on the second substrate, and after contacting the second substrate in the first station with the first reactant, and after contacting the first substrate in the second station with the second reactant, placing the second substrate in a second station substantially in the absence of the first reactant and placing the first substrate in the first station substantially in the absence of the second reactant, thus swapping the first substrate and second substrate.
In some aspects, a deposition reactor is provided. The deposition reactor can comprise a first station configured to contain a first substrate. The deposition reactor can comprise a second station configured to contain the first substrate, in which the first station is configured to contact the first substrate in the first station with a first reactant at a first temperature and in gas isolation from the second station such that no more than one monolayer of the first reactant is adsorbed on the first substrate, and in which the second station is configured to contact the first substrate in the second station with a second reactant at a second temperature and substantially in the absence of the first reactant. The deposition reactor can comprise a transfer system. The deposition reactor can comprise a controller set to control a cycle of moving the substrate via the transfer system to the first station, directing the first station to contact the first substrate with the first reactant, moving the substrate to the second station via the transfer system, and directing the second station to contact the first substrate with the second reactant, and further set to repeat the cycle until a film of desired thickness is selectively formed on the first surface but not the second surface. No surface of the deposition reactor can be substantially contacted with more than one of the first reactant and second reactant. In some embodiments, the deposition reactor can be configured to repeat contacting the first substrate in the first station with the first reactant at the first temperature and substantially in the absence of the second reactant, and contacting the first substrate in the second station at the second temperature and with the second reactant substantially in the absence of the first reactant until a film of desired thickness is formed on the first substrate. In some embodiments, the deposition reactor is configured to maintain the first station at the first temperature while maintaining the second station at the second temperature. In some embodiments, the second station comprises a heated showerhead, and the deposition reactor is configured to maintain the first station at the first temperature while delivering the second reactant through the heated showerhead to the second station at the second temperature. In some embodiments, the deposition reactor further comprises at least one solid material that keeps the second station in gas isolation from the first station. In some embodiments, the deposition reactor further comprises a gas bearing that keeps the second station in gas isolation from the first station. In some embodiments, the deposition reactor further comprises an intermediate space, outside of the first station and the second station, and the transfer system comprises a transfer member for moving a substrate through the intermediate space, and the intermediate space is configured to accommodate the transfer member, and the transfer member is further configured to be moved to the intermediate space after placing the substrate in the first station but before placing the substrate in the second positon. In some embodiments, the transfer member comprises a rotating substrate holder configured to remove the first substrate from the first station and place the first substrate in the second station by rotation. In some embodiments, the transfer member comprises a spider. In some embodiments, wherein each station is configured to contain a movable stage configured to move the substrate from the station to the intermediate space and from the intermediate space to the station, in which each movable stage is configured to move the substrate to and from only one station, and in which the transfer member is configured to place a substrate on the movable stage and remove a substrate from the movable stage in the intermediate space, but not in the station itself. In some embodiments, the deposition reactor further comprises a plurality of moveable physical barriers that define at least a portion of the first station and the second station, in which the physical barriers can be moved to expose a substrate in a station to an intermediate space, and in which the transfer system comprises a spider that is configured to move the substrate after the physical barriers have been moved to expose the substrate.
In accordance with some embodiments herein, a thin film can be deposited by Atomic Layer Deposition (ALD). A substrate can be placed in a first station, and contacted with a first reactant at a first temperature so that no more than a monolayer of the first reactant is adsorbed on the substrate. The substrate can then be placed in a second station in the absence (or substantial absence) of the first reactant, and contacted with a second reactant at a second temperature, in which the second reactant reacts with the adsorbed first reactant. The cycle can be repeated. The stations can be in gas isolation from each other, such that each station provides no more than one reactant, and so that no surface of any station is contacted with more than one reactant. The first temperature can be different from the second temperature, and the first reactant can be provided in the first station at the first temperature at the same time that the second reactant is provided in the second station at the second temperature. In various deposition processes such as ALD, different reactants can have different temperature stabilities. Without being limited by any theory, it is contemplated that maintaining physical and/or spatial separation between different reactants that have different temperature stabilities can allow each reactant to be provided at an appropriate temperature, and minimize particle formation and/or undesired gas phase reactions that could result from a reactant being shifted to a temperature at which it is less stable, and/or at which it condenses. Additionally, it is contemplated that some reactants will react more efficiently at certain temperatures or temperature ranges (e.g. a first reactant can be adsorbed more efficiently at a first temperature or temperature range, while a second reactant can be adsorbed more efficiently at a second temperature or temperature range). In accordance with some embodiments herein, once a “low temperature” reactant has been adsorbed on a substrate, the substrate can be contacted with a “high temperature” reactant at a high temperature. Without being limited by any theory, it is contemplated that the high temperature will not negatively affect the already-adsorbed first reactant or the film quality, as the “low temperature” reactant has already been adsorbed. In accordance with some embodiments herein, a thin film can be deposited by a method other than ALD, for example Chemical Vapor Deposition (CVD).
In accordance with some embodiments herein, a thin film can be selectively deposited on a first surface of a substrate relative to a second, different surface of the substrate by Atomic Layer Deposition (ALD). The substrate can be placed in a first station, in which a first reactant is contacted with the substrate at a first temperature or temperature range and in gas isolation from a second station so that no more than a monolayer of the first reactant is preferentially adsorbed on a first exposed surface of the substrate relative to a second surface of the substrate. The substrate can then be placed in a second station in which a second reactant is contacted with the substrate at a second temperature or temperature range and in gas isolation from the first station and in the absence (or substantial absence) of the first reactant. The second temperature (or temperature range) can be different from the first temperature (or temperature range). The second reactant can preferentially react with the adsorbed first reactant, so that no more than a monolayer of the second reactant is preferentially absorbed over the first surface of the substrate of the substrate relative to the second surface of the substrate. Optionally, the substrate can repeatedly be moved between the first and second stations until a thin film of a desired thickness is formed. Optionally, the first temperature (or temperature range) is lower than the second temperature (or temperature range). Optionally, the first temperature (or temperature range) is higher than the second temperature (or temperature range). Optionally, the first reactant is adsorbed on the first exposed surface but not the second exposed surface. Optionally, selectivity can be increased by increasing the spatial and or temporal separation of gas phase reactants. The first and second stations can be in gas isolation during process steps so as to minimize undesired Chemical Vapor Deposition (CVD) reactions comprising the first and second reactants on other surfaces of the wafer or on the stations. For example, after contacting the wafer with a reactant in a station, that station can be purged before the wafer is moved to another station so as to minimize reactants being carried over to the other station. In some embodiments, the thin film comprises a nitride, such as a TiN or AlN film. In some embodiments, a film of at least about 1 nm is deposited, for example 1 nm, 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 60, 70, 80, 90, or 100 nm, including ranges between any two of the listed values, for example 1 nm-100 nm, 1 nm-20 nm, 1 nm-10 nm, 1 nm-5 nm, 2 nm-100 nm, 2 nm-20 nm, 2 nm-10 nm, 2 nm-5 nm, 5 nm-100 nm, 5 nm-20 nm, 5 nm-10 nm, 10 nm-100 nm, or 10 nm-20 nm.
As a practical matter, it is contemplated that in accordance with embodiments herein, there can be at least some temperature variation (even very small temperature variation) associated with providing or maintaining a reactant at a particular temperature. Accordingly, anywhere herein that mentions a first temperature that is different from a second temperature (or third temperature, fourth temperature, etc.), unless stated otherwise, a first temperature range that differs from the second temperature range is also expressly contemplated. Preferably, the first temperature range that differs from the second temperature range does not overlap the second temperature range.
ALD type processes are based on controlled, self-limiting surface reactions of precursor chemicals. In accordance with some embodiments herein, gas phase reactions are avoided by alternately and sequentially contacting the substrate with the reactants at different temperatures. Vapor phase reactants are separated from each other, for example, by removing excess reactants and/or reactant byproducts from the reaction chamber between reactant pulses, or as described herein, by providing different reactants in different spaces, contacting the substrates with different reactants at different temperatures, and moving a substrate among the different spaces.
Deposition temperatures are generally maintained below the thermal decomposition temperature of the reactants but at a high enough level to avoid condensation of reactants and to provide the activation energy for the desired surface reactions. Of course, the appropriate temperature window for any given ALD reaction can depend upon the surface termination and reactant species involved. Frequently, a substrate comprising a first surface and second, different surface (e.g. comprising a different composition and/or a different morphology or crystallinity) can be heated to a suitable deposition temperature, generally at lowered pressure. In accordance with some embodiments herein, the temperature varies depending on the reactant being contacted with the substrate and/or the type of film being deposited, for example at or below about 600° C., for example at or below 500° C., 475° C., 450° C., 425° C., 400° C., 375° C., 350° C., 325° C., 300° C., 275° C., 250° C., 225° C., 200° C., 175° C., 150° C., 125° C., 100° C., 75° C., 50° C., 40° C., 30° C., or 20° C., including ranges between any two of the listed values, for example, 20° C.-500° C., 20° C.-450° C., 20° C.-400° C., 20° C.-350, 20° C.-300° C., 20° C.-250° C., 20° C.-200° C., 20° C.-150° C., 20° C.-100° C., 20° C.-500° C., 50° C.-450° C., 50° C.-400° C., 50° C.-350, 50° C.-300° C., 50° C.-250° C., 50° C.-200° C., 50° C.-150° C., 50° C.-100° C., 100° C.-500° C., 100° C.-450° C., 100° C.-400° C., 100° C.-350° C., 100° C.-300° C., 100° C.-250° C., 100° C.-200° C., 100° C.-150° C., 200° C.-500° C., 200° C.-400° C., or 200° C.-300° C. In accordance with some embodiments herein, different reactants can have different temperature stabilities (e.g. the reactants can decompose at different temperatures and/or condense at different temperatures). By way of example, nitride films such as AlN or TiN, which can be deposited in accordance with some embodiments herein, can be deposited using an metalorganic precursor, and a nitrogen precursor. Many metal organic precursors, for example TMA have relatively low decomposition temperatures (e.g. 375° C. for TMA), while many nitrogen precursors, for example NH3 require a relatively high temperature to initiate their respective half reaction (e.g. temperatures at or greater than 375° C. for NH3). It is contemplated that in accordance with some embodiments herein, a reaction for first precursor (e.g. a first half reaction) is performed in a first station at a temperature suitable for the first precursor and in gas isolation from a second station, and a reaction for a second precursor (e.g. a second half reaction) is performed in a second station at a temperature suitable for the second precursor and in gas isolation from the first station.
It is contemplated that in some embodiments, each reactant is provided in a station and contacted with the substrate at an appropriate temperature so that the reactant is deposited while minimizing or eliminating condensation, minimizing or eliminating thermal decomposition, and/or minimizing or eliminating gas phase reactions by the reactant, so that substantially no gas phase reactions occur, and optionally substantially no particle formation occurs. In some embodiments, only one kind of reactant is provided in each station, and the different reactants in their respective different stations can be at different temperatures at the same time. Accordingly, in some embodiments, a substrate is contacted with a first reactant in a first station at a first temperature or temperature range, and is contacted with a second reactant in a second station at a second temperature or temperature range that is different from the first temperature. Optionally, the first station and the second station are in gas isolation from each other when the substrate is contacted with each of the first and second reactants. Optionally, the first temperature is lower than the second temperature. Optionally, the first temperature is greater than the second temperature. In some embodiments, the first temperature differs from the second temperature by at least 1° C., for example at least 1° C., 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 99, 100, 110, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 210, 220, 230, 240, 250, 260, 270, 280, 290, or 300° C., including ranges between any two of the listed values, for example 1-10° C., 1-20° C., 1-30° C., 1-40° C., 1-50° C., 1-60° C., 1-70° C., 1-80° C., 1-90° C., 1-100° C., 1-150° C., 1-200° C., 2-10° C., 2-20° C., 2-30° C., 2-40° C., 2-50° C., 2-60° C., 2-70° C., 2-80° C., 2-90° C., 2-100° C., 2-150° C., 2-200° C., 5-10° C., 5-20° C., 5-30° C., 5-40° C., 5-50° C., 5-60° C., 5-70° C., 5-80° C., 5-90° C., 5-100° C., 5-150° C., 5-200° C., 10-20° C., 10-30° C., 10-40° C., 10-50° C., 10-60° C., 10-70° C., 10-80° C., 10-90° C., 10-100° C., 10-150° C., 10-200° C., 20-30° C., 20-40° C., 20-50° C., 20-60° C., 20-70° C., 20-80° C., 20-90° C., 20-100° C., 20-150° C., or 20-200° C. In accordance with some embodiments herein, a reactant can be brought to an appropriate temperature or temperature range by a heated showerhead, a heated source vessel, a heated susceptor, a heated gas source line, a cooled source vessel, a cooled susceptor, a cooled gas source line, and/or temperature in the station. Optionally, the station can comprise a heating and/or cooling system in thermal communication with the station so as to bring the station to a desired temperature. For example, the heating system can include a heater or heating element, a lamp, thermal tape, thermal coils, a cooling fan, a coolant coil, or any combination of two or more of the listed items.
In some embodiments, a plasma provides energy to drive a deposition reaction, and thus can permit the reaction to be performed a lower temperature and/or faster speed than if it was driven only by thermal energy. Plasmas can be provided, for example, by a remote plasma generator, or in situ. In some embodiments, the first reactant is provided as a plasma or in conjunction with a plasma (e.g. for plasma enhanced CVD or ALD), and the second reactant is provided as a gas phase (e.g. for thermal deposition). In some embodiments, the first reactant is provided as a gas phase (e.g. for thermal deposition), and the second reactant is provided as a plasma or in conjunction with a plasma (e.g. for plasma enhanced CVD or ALD). In some embodiments, the first reactant and second reactant are each provided as a gas phase (e.g. for thermal deposition). In some embodiments, the first reactant is provided as a plasma or in conjunction with a plasma (e.g. for plasma enhanced CVD or ALD), and the second reactant is provided as a plasma or in conjunction with a plasma (e.g. for plasma enhanced CVD or ALD).
The terms “wafer” and “substrate” are used interchangeably herein. The surface of the substrate can be contacted with a vapor phase first reactant. In some embodiments a pulse of vapor phase first reactant is provided to a reaction space containing the substrate. In some embodiments the substrate is moved to a reaction space where vapor phase first reactant is provided. Preferably, the vapor phase reactant is not present in the reaction space when the substrate is moved to the reaction space, and the vapor phase reactant is subsequently provided in the reaction space. In some embodiments, the vapor phase reactant is already present in the reaction space when the substrate is moved to the reaction space. Optionally, some vapor phase reactant is already present in the reaction space when the substrate is placed in the reaction space, and additional vapor phase second reactant is added to the reaction space thereafter. Conditions are preferably selected such that no more than about one monolayer of the first reactant is adsorbed on the substrate surface in a self-limiting manner. The appropriate contacting times can be readily determined by the skilled artisan based on the particular circumstances. Excess first reactant and reaction byproducts, if any, are removed from the substrate surface, such as by purging with an inert gas or by removing the substrate from the presence of the first reactant. In accordance with some embodiments herein, the vapor phase reactant is contacted with a substrate in a station at an appropriate temperature so that substantially no gas phase reactions of the reactant occur (or no gas phase reactions of the reactant occur), substantially no particle formation occurs or particle formation is eliminated, and/or substantially no condensation of the reactant (or no condensation of the reactant) occurs. In some embodiments, the vapor phase reactant is provided into the station at the appropriate temperature, and the station is also at this. In some embodiments, the vapor phase reactant is provided into the station at the appropriate temperature, and the substrate is on a susceptor that is also at this temperature. In some embodiments, the vapor phase reactant is provided at the appropriate temperature, and the station is at a different temperature. For example, the vapor phase reactant can be provided through a heated showerhead so as to be provided at a higher temperature than the temperature in the rest of the station. In some embodiments, the vapor phase reactant is provided in a station, and in the station the vapor phase reactant is heated or cooled to the appropriate temperature for contacting the substrate with the reactant, for example based on temperature in the rest of the station, and/or the temperature of the susceptor on which the substrate is positioned.
“Purging” means that vapor phase precursors and/or vapor phase byproducts are removed from the substrate surface such as by evacuating a chamber with a vacuum pump and/or by replacing the gas inside a reactor with an inert gas such as argon or nitrogen. Typical purging times (and suitable in accordance with some embodiments herein) are from about 0.05 to 20 seconds, more preferably between about 1 and 10 seconds, and still more preferably between about 1 and 2 seconds. However, other purge times can be utilized if necessary, such as where highly conformal step coverage over extremely high aspect ratio structures or other structures with complex surface morphology is needed, for example purge times of at least 20 seconds, for example at least 20 seconds, 25 seconds, 30 seconds, 40 seconds, or 50 seconds, including ranges between any two of the listed values.
The surface of the substrate can be contacted with a vapor phase second gaseous reactant at a second temperature that is different from the temperature at which the first reactant contacts the substrate. In some embodiments a pulse of a second gaseous reactant is provided to a reaction space containing the substrate. In some embodiments the substrate is moved to a reaction space where the vapor phase second reactant is provided. Optionally, the vapor phase second reactant is already present in the reaction space when the substrate is placed in the reaction space. Optionally, the vapor phase second reactant is not present in the reaction space when the substrate is placed in the reaction space, and the second reactant is subsequently added to the reaction space. Optionally, the second reactant can be added to the reaction space at an appropriate temperature that is either the same or different than the temperature of the rest of the station. Optionally the second reactant can contact the substrate at a second temperature while a different substrate in a different station is contacted with the first reactant at a first temperature that is different from the second temperature. Optionally, some vapor phase second reactant is already present in the reaction space when the substrate is placed in the reaction space, and additional vapor phase second reactant is added to the reaction space thereafter. Excess second reactant and gaseous byproducts of the surface reaction, if any, are removed from the substrate surface. The steps of contacting and removing are repeated until a thin film of the desired thickness has been selectively formed on the first surface of substrate, with each cycle leaving no more than a molecular monolayer. Additional phases comprising alternately and sequentially contacting the surface of a substrate with other reactants can be included to form more complicated materials, such as ternary materials.
As described herein, each phase of each cycle is preferably self-limiting. An excess of reactant precursors is supplied in each phase to saturate the susceptible structure surfaces. Surface saturation ensures reactant occupation of all available reactive sites (subject, for example, to physical size or “steric hindrance” restraints) and thus ensures excellent step coverage. Typically, no more than one molecular layer of material is deposited with each cycle (or less than one molecular layer of material is deposited with each cycle). However, in some embodiments more than one molecular layer can deposited during the cycle.
Removing excess reactants can include evacuating some of the contents of a reaction space and/or purging a reaction space with helium, nitrogen or another inert gas. In some embodiments, purging comprises turning off the flow of the reactive gas while continuing to flow an inert carrier gas to the reaction space.
The precursors employed in the ALD type processes may be solid, liquid or gaseous materials under standard conditions (room temperature and atmospheric pressure), provided that the precursors are in vapor phase before they are contacted with the substrate surface. Contacting a substrate surface with a vaporized precursor means that the precursor vapor is in contact with the substrate surface for a limited period of time. Typically, the contacting time is from about 0.05 to 10 seconds. However, depending on the substrate type and its surface area, the contacting time may be even higher than 10 seconds. Contacting times can be on the order of minutes in some cases. The optimum contacting time can be determined by the skilled artisan based on the particular circumstances. In accordance with some embodiments herein, a first vapor phase reactant can be contacted with the substrate at a first temperature, and a second vapor phase reactant can be contacted with the substrate at a second temperature that is different from the first temperature. Each vapor phase reactant can be at the appropriate temperature prior to contacting the substrate (e.g. if the reactant is provided by a heated showerhead or if an entire station is at the appropriate temperature), or upon contacting the substrate (e.g. if the susceptor is heated to bring the substrate to the appropriate temperature).
The mass flow rate of the precursors can also be determined by the skilled artisan. In some embodiments the flow rate of metal precursors is preferably between about 1 sccm and 1000 sccm without limitation, more preferably between about 100 sccm and 500 sccm. Example mass flow rates in accordance with some embodiments herein include at least 1 sccm, for example at least 10 sccm, 50 sccm, 100 sccm, 200 sccm, 300 sccm, 400 sccm, 500 sccm, 600 sccm, 700 sccm, 800 sccm, 900 sccm, or 1000 sccm, including ranges between any two of the listed values.
The pressure in a reaction chamber is typically from about 0.01 to about 20 mbar, more preferably from about 1 mbar to about 10 mbar, for example 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 mbar, including ranges between any two of the listed values. However, in some cases the pressure will be higher or lower than this range, as can be determined by the skilled artisan given the particular circumstances.
Before starting the deposition of the film, the substrate is typically heated to a suitable growth temperature. In some embodiments, the substrate is placed on a heated susceptor. Optionally, the susceptor can have a lower mass than the substrate. Without being limited by any theory, it is contemplated that a substrate with a lower mass than the substrate can arrive at a desired temperature more quickly than the substrate. As such, the substrate will spend less time at a different temperature, for example a temperature at which a reactant may condense, decompose, and/or react with the surface of the susceptor. The growth temperature varies depending on the type of thin film formed, physical properties of the precursors, etc. The growth temperatures are discussed in greater detail below in reference to each type of thin film formed. The growth temperature can be less than the crystallization temperature for the deposited materials such that an amorphous thin film is formed or it can be above the crystallization temperature such that a crystalline thin film is formed. The preferred deposition temperature may vary depending on a number of factors such as, and without limitation, the reactant precursors, the pressure, flow rate, the arrangement of the reactor, crystallization temperature of the deposited thin film, and the composition of the substrate including the nature of the material to be deposited on. The specific growth temperature may be selected by the skilled artisan. In some embodiments, the first and second reactants for an ALD reaction have the same growth temperature. In some embodiments, the first and second reactants for the ALD reaction have different growth temperatures. Optionally, the first reactant has a higher growth temperature than the second reactant. Optionally, the first reactant has a lower growth temperature than the second reactant. ALD in accordance with some embodiments herein can comprise thermal ALD. ALD in accordance with some embodiments herein can comprise thermal plasma assisted ALD or plasma enhanced ALD (PEALD).
Examples of suitable reactors that may be used include reactors with multiple stations, in which the stations are, or can be, placed in gas isolation from each other. ALD equipment is commercially available, for example, from ASM which is headquartered in Almere, Netherlands. In some embodiments a flow type ALD reactor is used. Preferably, reactants are kept separate until reaching the reaction chamber, such that shared lines for the precursors are minimized. However, other arrangements are possible, such as the use of a pre-reaction chamber as described in U.S. Patent Application Publication Nos. 2005/0092247 and 2002/0108570, the disclosures of which are incorporated herein by reference in their entireties.
The growth processes can optionally be carried out in a reactor or reaction space connected to a cluster tool. In a cluster tool, because each reaction space is dedicated to one type of process, the temperature of the reaction space in each module can be kept constant, which improves the throughput compared to a reactor in which is the substrate is heated up to the process temperature before each run.
A stand-alone reactor can be equipped with a load-lock. In that case, it is not necessary to cool down the reaction space between each run.
In some embodiments, a thin film or a portion of a thin film is deposited by chemical vapor deposition (CVD) using one or more precursors described herein. For example, in some embodiments, a film can be deposited by CVD prior to one or more cycles of ALD over the CVD-produced film, and/or following one or more cycles of ALD. For example, in some embodiments, CVD is performed on a desired substrate, but ALD is not. Deposition can be suitably conducted according to the various CVD methods. CVD methods are described, for example, in U.S. Pat. No. 7,438,760, which is incorporated by reference in its entirety herein. The disclosed methods in accordance with some embodiments herein can be suitably practiced by employing CVD. In some embodiments, CVD is thermal. In some embodiments, CVD comprises plasma-enhanced chemical vapor deposition (PECVD).
The CVD reactant and, optionally two or more reactants including an etchant gas and/or an electrical dopant precursor, are preferably introduced to the chamber in the form of separate gases or by intermixing to form a feed gas. The intermixing to form the feed gas may take place in the chamber or prior to introduction of the feed gas to the chamber. The total pressure in the CVD chamber is preferably in the range of about 10−5 Torr to about 1000 Torr, more preferably in the range of about 10−4 Torr to about atmospheric pressure, for example about 760 Torr. In some embodiments, the chemical vapor deposition conditions comprise a chamber pressure of at least about 10−5 Torr, preferably a chamber pressure of about 760 Torr or less, for example a pressure of about 760 Torr, 740 Torr, 720 Torr, 700 Torr, 680 Torr, 660 Torr, 640 Torr, 620 Torr, 600 Torr, 580 Torr, 560 Torr, 540 Torr, 520 Torr, 500 Torr, 480 Torr, 460 Torr, 440 Torr, 420 Torr, 400 Torr, 350 Torr, 300 Torr, 250 Torr, 200 Torr, 150 Torr, or less, or a pressure in the range of about 104 Torr to about 760 Torr, for example about 104 Torr, 10−3 Torr, 10−2 Torr, 101 Torr, 1 Torr, 5 Torr, 10 Torr, 30 Torr, 50 Torr, 100 Torr, 150 Torr, 200 Torr, 250 Torr, 300 Torr, 350 Torr, 400 Torr, 450 Torr, 500 Torr, 600 Torr, 650, 700 Torr, 750 Torr, or 760 Torr, including ranges between any two of the listed values. The chamber pressure may be referred to herein as a deposition pressure. The partial pressure of Sn precursor is preferably in the range of about 0.0001% to about 100% of the total pressure, more preferably about 0.001% to about 50% of the total pressure. In some embodiments, the temperature of the CVD reaction chamber is about 600° C. or less, for example about 550° C. or less. In some embodiments, the temperature of the reaction chamber is about 500° C. or less, for example, less than 500° C., 490° C., 480° C., 470° C., 460° C., 450° C., 440° C., 430° C., 420° C., 410° C., 400° C., 375° C., 350° C., 325° C., or 300° C. or less, including ranges between any two of the listed values.
In some embodiments, if CVD and ALD are both performed, the CVD is performed at a different temperature than ALD. For example, a CVD reactant can have a different thermal stability and/or condensation temperature than one or more of the ALD reactants. Without being limited by any theory, it is contemplated that by contacting a substrate with a CVD reactant at a first station and at first temperature, and contacting a substrate with an ALD reactant with a second reactant in a second station and at a second temperature and in gas isolation from the first station, substantially no gas phase reactions involving the CVD reactant, ALD reactants, or a reaction between CVD and ALD reactants occur (or no gas phase reactions involving these reactants occur), and substantially no particle formation occurs (or no particle formation occurs)
As used herein, “station” refers broadly to a location that can contain a substrate so that a deposition reaction can be performed on the substrate in the station. A station can thus refer to a reactor, or a portion or a reactor, or a reaction space or reaction chamber within a reactor.
Preferably, stations in accordance with embodiments herein are in “gas isolation” from each other, or are configured to be in gas isolation while a substrate is processed inside the station. As used herein, “gas isolation” means that a first reactant in a first station cannot detectably flow or diffuse to another station, and moreover that other reactants (e.g. from other stations) cannot detectably flow or diffuse into the first station. Stations in accordance with embodiments herein can be permanently in gas isolation from each other (for example, separated by solid walls, or as discrete chambers), or can be reversibly in gas isolation from each other (for example, by positioning solid barriers or gas bearings or gas curtains (e.g. inert gas curtains such as N2 curtains) after a substrate is positioned in a given station, or just prior to placing a substrate in a given station, so that the solid barriers or gas bearings or gas curtains place the substrate in gas isolation). In some embodiments, the stations are in gas isolation by way of physical barriers but not gas bearings or gas curtains. In some embodiments, the stations are in gas isolation by way of physical barriers in conjunction with gas bearings and gas curtains. In some embodiments, after or concurrently with the placement of a substrate in a particular station, that substrate is placed in gas isolation from the other stations (so that process steps can be performed in that station), and after the substrate has been exposed to reactant in the station, the station is brought out of gas isolation, and the substrate can be removed from the station and positioned in an intermediate space. Substrates from multiple different stations can be placed in a shared intermediate space for movement from station to station. The stations can be placed in gas isolation, for example, by a physical barrier. In some embodiments, one or more stations comprises a heating and/or cooling system, so that different reactants in different stations can be contacted with substrates at different temperatures at the same time. As such, in some embodiments, an entire first station is at a lower or higher temperature than an entire second station, or a first station comprises a susceptor that is at a lower or higher temperature than a susceptor in a second station, and/or a first reactant is flowed into a first station while a second reactant is flowed into a second station at a lower or higher temperature than the first station. In some embodiments, each station provides only one reactant. In some embodiments, each reactant substantially contacts the substrate at only one, and two or more different reactants are contacted with the substrate at different temperatures.
In some embodiments, the stations are separated from each other by solid materials, and are not separated from each other by gas bearings or gas curtains. In some embodiments, the stations are separated from each other by solid materials or gas curtains, and are not separated from each other by gas bearings. In some embodiments, the stations are separated from each other by solid materials or gas bearings, and are not separated from each other by gas curtains. Optionally, the physical barrier can move in conjunction with a moving stage that shuttles substrates between the stations and the intermediate space, so that the physical barrier places the station in gas isolation at the same time (or slightly before or slightly after) the substrate is placed in that station. Optionally the physical barrier can be used in conjunction with a gas barrier, for example to fill some gaps left by the physical barrier. In some embodiments, a physical barrier is provided, but a gas barrier or gas curtain does not.
In some embodiments, a station comprises a module or chamber of a reactor, so that each station comprises a separate chamber or module. In some embodiments, a station comprises a portion of a reaction chamber which can be placed in gas isolation from other portions of the reaction chamber by positioning a wall, a gas curtain or a gas bearing between the stations. Optionally, a given station is completely enclosed by one or more walls, gas curtains, gas bearings, or a combination of any of these items. It is contemplated that physical separation between two stations that provide different reactants can further facilitate gas isolation in accordance with some embodiments herein, and/or can further facilitate contacting a substrate with different reactants at different temperatures in different stations. Accordingly, in some embodiments, a first station that provides a first reactant is not immediately adjacent to a second station that provides a second reactant, but rather physical space is maintained between the first and second station, as well as optional features such as walls or gas walls or gas bearings and/or intervening chambers. In some embodiments, scavengers (for example secondary precursor scavengers in gas communication with a vacuum) are positioned between stations to scavenge any precursor that has escaped from stations and/or been dragged along with the substrate.
In accordance with some embodiments herein, a station for deposition is in gas communication with a reactant source, so that a reactant can be flowed into the station. Typically, stations for deposition (e.g. ALD) in accordance with various embodiments herein will provide only one reactant each (e.g. a first station can provide only one reactant for a first half reaction, and a second station can provide only one, different reactant for a second, different half reaction so as to complete the ALD reaction). Different reactants can be contacted with a substrate at different temperatures that are appropriate for each particular reactant. Accordingly, for ALD, a first station can provide a first reactant, and a second station can provide a second reactant that is different from the first reactant. The first reactant can be contacted with a substrate in the first station at a first temperature. The second reactant in the second station can react at a second temperature with a layer (typically no more than a monolayer) obtained from the adsorption of the first reactant contacted with the substrate at the first station, in which the second temperature is different from the first temperature. In some embodiments, the second temperature is greater than the first temperature. In some embodiments, the second temperature is less than the first temperature. In some embodiments, each reactant substantially contacts the substrate at only one temperature, and two or more different reactants are contacted with the substrate at different temperatures. It is noted a number of first and second gas and/or plasma reactants, if contacted with each other, can result in undesired chemical vapor deposition (CVD)-type reactions, which can yield undesired deposits on surfaces of the reactor and/or substrate. Moreover, if a reactant is at a temperature outside of an appropriate range for maintaining stability and or avoiding condensation, the reactant can engage in gas phase reactions, and/or particles of the reactant can form. Selective ALD processes are particularly sensitive to loss of selectivity and/or reduction in film quality due to gas phase reactions, particle formation, and/or CVD reactions. Furthermore, ALD processes that involve more than two reactants, for example dual selective ALD (which can involve 4, 6, or more reactants) are especially susceptible to loss of selectivity and/or reduction in film quality due to gas phase reactions, particle formation, and/or CVD reactions between the various reactants. Accordingly, it is contemplated that in accordance with some embodiments herein, different reactants are contacted with the substrate at different temperatures, and physical and/or temporal separation between different reactants is provided so as to avoid undesired gas phase reactions, particle formation, and/or CVD-type reactions. Preferably, a first station provides a first reactant but not a second reactant in which the substrate in the first station can be contacted with the first reactant at a first temperature, and a second station provides a second reactant but not a first reactant in which the substrate in the second station can be contacted with the second reactant at a second temperature that is different from the first temperature. The first and second stations can be in gas isolation from each other. As such, the second reactant can be substantially or completely absent from the first station, and the first reactant can be substantially or completely absent from the second station. Thus, to the extent that the first station and the second station are configured to contact the substrate with reactants at different temperatures, there is substantially no contacting the substrate with the first reactant at the second temperature or contacting the substrate with the second reactant at the first temperature. It is contemplated that this separation can minimize or eliminate gas phase reactions of each reactant and can minimize or eliminate underside CVD-type reactions. t is noted that not just any multi-station ALD reactor will provide gas isolation between stations. For example, a number of conventional multi-station ALD reactors can involve incomplete or a lack of separation between reactants, for example by providing multiple reactants at the same station, or by rapidly moving a substrate between stations while allowing “trailing” reactants to travel with the substrate and react with other reactants. Furthermore, a number of conventional multi-station ALD reactors can comprise heaters, but are configured to maintain the entire reactor at the same temperature, and thus are not configured for contacting the substrate with a first reactant at a first temperature while contacting another substrate with a second reactant at a second, different temperature. Moreover, a conventional emphasis on increasing throughput alone can exacerbate the possibility of undesirable condensation, particle formation, gas-phase reactions, CVD-type reactions, or other undesired reactions, for example by rapidly moving a substrate away from a station while concentrations of reactants are high (and bringing a relatively high concentration of “trailing” reactant to the next station), and/or by endeavoring to perform all of the process steps at a single “compromise” temperature, such that some reactants are above their decomposition temperature and/or some reactants are below their condensation temperature. It is contemplated in accordance with some embodiments herein that relatively low throughput is acceptable in order to obtain process advantages such as contacting the substrate with each reactant at a suitable temperature for that reactant, highly selective deposition, high film quality, and/or an absence of deposits on reactors. In some embodiments, films having low levels of contaminants (e.g. low levels of C and/or H) are deposited. It is contemplated that reducing contaminants can improve the etching speed of thin nitired films such as TiN or AlN films, and thus can allow thinner films to be practical for patterning applications.
In some embodiments, a station is configured for thermal ALD. In some embodiments, a station is configured for PEALD. Optionally, the plasma can be generated by a remote plasma generator, or can be generated in situ.
In some embodiments, a reactant in a station is delivered via a showerhead. Optionally, the showerhead comprises a heated showerhead so as to provide the reactant to the station at a desired temperature or range of temperatures. In some embodiments, the heated showerhead provides the reactant to the station at or near the temperature at which the reactant contacts the substrate. Optionally, the showerhead comprises a vacuum exhaust scavenger around its perimeter to capture excess reactant, and to minimize the amount of reactant that is potentially available to participate in CVD reactions with other reactants. In some embodiments, reactants are contained within stations (and/or reactant source lines and/or purge lines), but are not permitted to enter any spaces between the stations.
It is noted that for some indexed multi-station processes (e.g. processes in which a substrate is moved between multiple stations) in accordance with some embodiments herein, the station with the slowest process time is rate-limiting. That is, if a first station requires 3 seconds to deposit and purge, no more than one substrate can be cycled through the stations every three seconds, even if the other stations require less than three seconds to provide and purge the reactant. This can result in a slower process and/or can waste reactants if the reactants are constantly supplied in stations that require shorter exposure times to the substrate. In some embodiments, reactants are not constantly provided in each station, but rather exposure time in each station is selected based on the specific reaction occurring in that station. Optionally, a first reactant is contacted with the substrate in a first station at a first temperature while a second reactant is contacted with the substrate in a second station at a second temperature that is different from the first temperature. Thus, if a first reactant at a first station requires a shorter exposure time than a second reactant at a second station, the flow of the first reactant can be cut-off in the first station after a sufficient deposition time for the first reactant, even if the second reactant is still being provided in the second station at the second temperature. Optionally, excess reactant is recovered. For example, if reactant #1 is contacted with a substrate at station #1 for 1 second, and reactant #2 is contacted with a substrate at station #2 for 3 seconds, after the substrate is contacted with reactant #1 at station #1 for 1 second a vacuum can recover excess reactant #1 while the contacting continues at station #2. It is noted that reactant #1 can be flowed continuously, or the flow of reactant #1 can be shut-off after the contacting. Optionally, a reactant is provided via a showerhead or showerhead-like distributor, which further comprises a vacuum around its perimeter. After a sufficient time for the reactant to be deposited, the vacuum recovers any excess reactant. Optionally, the showerhead or showerhead-like distributor is heated so as to provide reactant into the station at a desired temperature. Optionally showerhead or showerhead-like distributors can be configured to flow reactant from the center to the edge of the substrate. It is contemplated that such an arrangement of reactant flow can minimize or eliminate edge effects, which can be characteristic of cross-flow designs.
In accordance with some embodiments herein, a substrate is shuffled between two or more stations, in which each station provides a different reactant at a different temperature. For example, a first station can provide a first reactant that is selectively adsorbed onto a first exposed surface of the substrate (relative to a second, different exposed surface of the substrate on which no or substantially no adsorption takes place) at a first temperature to form no more than a monolayer on the first exposed surface, a second station can provide a second reactant that is different from the first reactant, and reacts with the adsorbed first reactant at a second temperature different from the first temperature so that no more than a monolayer of the second reactant is adsorbed over the first exposed surface of the substrate (but does not react with the second, different exposed surface of the substrate). The substrate can be repeatedly shuffled back and forth between the first and second stations until a film of desired thickness is formed. In some embodiments, the substrate moves continuously between stations. However, it is contemplated that continuous movement can result in the intermixing of different reactants (for example if a substrate holder continuously moves between station 1 and station 2, some reactant from station 1 can remain associated with the substrate holder and “trail along” to station 2), which can result in undesired CVD reactions between the different reactants, and/or gas phase reactions of (or particle formation by) the different reactants for example if a trailing reactant is brought to a station at a different temperature. On the other hand, stop-start motion involving pauses or near pauses while the substrate is in a station and quick motion between stations, for example indexing, can minimize the time in which a substrate is outside of a station (and thus can minimize potential exposure to reactants that have escaped from other stations) and/or can facilitate purging a given station before the substrate exits the station. Accordingly, in some embodiments, the motion of the substrate between stations is not continuous, but rather comprises an indexing motion, such as a stop-start, or alternating slow-fast motions.
Examples of approaches for moving substrates from station to station and corresponding process steps in accordance with some embodiments herein, are illustrated schematically in
In some embodiments, the substrate is moved from one station to the next station in the process sequence (e.g. movement time between the first station and the second station, and not necessarily including time in the station) in less than 1000 milliseconds (msec), for example less than 1000 msec, 900, 800, 700, 600, 500, 400, 300, 200, 175, 150, 125, 100, 75, 50, 25, 10, or 5 msec, including ranges between any two of the listed values, for example 10-1000 msec, 10-500 msec, 10-400 msec, 10-300 msec, 10-200 msec, 10-100 msec, 30-1000 msec, 30-500 msec, 30-400 msec, 30-300 msec, 30-200 msec, 30-100 msec, 50-1000 msec, 50-500 msec, 50-400 msec, 50-300 msec, 50-200 msec, 50-100 msec, 100-1000 msec, 100-500 msec, 100-400 sec, 100-300 msec or 100-200 msec. Optionally, the substrate can be shuffled between two or more stations that are separated by solid materials such as walls, rather than gas bearings or gas curtains. Optionally, the substrate is shuffled between stations along a circular path or arc rather than a linear path. Optionally, the substrate is shuffled between stations along a linear path rather than an arc or circular path. It is also contemplated that moving a substrate from station-to-station without passing through any additional locations in accordance with some embodiments herein can increase throughput by minimizing handling time. Optionally, the substrate is moved directly from a first station to a second station without passing through an additional location.
It is further contemplated that in accordance with some embodiments herein, minimizing physical structures that pass from station to station can facilitate gas isolation between the different stations. For example, providing a susceptor in each station rather than moving a susceptor between stations can minimize residual reactants that trail along with the susceptor, and further can minimize CVD-type deposits on the susceptor itself. For example, only moving the substrate into stations from which reactants are absent can minimize or eliminate gas phase reactions involving trailing reactants, and can minimize or eliminate undesired CVD-type deposited on the susceptor itself. In some embodiments, the substrate is moved from station to station, and placed on a stationary susceptor at each station. As such, the substrate is not placed on any susceptor that moves between stations. In some embodiments, no susceptor moves from station-to-station. For example, a rotating plate wafer holder (e.g. a “lazy Susan” configuration) has the potential to bring “trailing,” residual reactants from station-to-station. Further, conventional “plate” wafer holders for holding a plurality of plates, and/or rotating the plate to transfer the wafers from station to station, and/or exposing the wafers to reactants while the wafers remain supported on the plate, have the disadvantage that a surface adjacent to the wafer travels from station to station. As such, deposition (ALD and/or CVD) can occur on the surface of the plate, which is undesirable. Accordingly, in some embodiments, the substrate is not placed on a rotating wafer holder. In some embodiments, the ALD reactor does not comprise a rotating wafer holder. In some embodiments, the substrate is placed only on stationary substrate holders. In some embodiments, each station comprises at least one wafer holder that is contained within the station, and does not move outside of the station. In some embodiments, a transfer member places the substrate on a susceptor in a station, or on a wafer holder in a station. In some embodiments, no surface of the reactor is exposed to more than one reactant. As such, in some embodiments, no surface is substantially contacted with more than one reactant. Optionally, the station can be at a particular temperature at the time the substrate is placed in the station, or can be heated or cooled to a particular temperature after the substrate is placed in the station.
Preferably, after the substrate is placed on a susceptor in a station by the transfer member, the transfer member retracts from the station so that the transfer member is not contacted with any reactants.
In accordance with some embodiments herein, the wafer surfaces are the only surfaces that are repeatedly and sequentially contacted to two or more reactants (i.e. other surfaces such as susceptors, transfer members, chamber surfaces, gas source conduits, and/or discharge conduits are not contacted with two or more different reactants). In accordance with some embodiments herein, the wafer surfaces are the only surfaces that are contacted with reactants at different temperatures (e.g., the wafer can be contacted with a first reactant at a first temperature and a second reactant at a second temperature, while other surfaces are contacted with no reactants, or only one reactant at a single temperature). The contacting with different reactants and at different temperatures, in accordance with various embodiments herein, can occur in different stations. Accordingly, all inner surfaces of a station, including wall surfaces, susceptor surfaces, gas conduit and discharge conduit surfaces in direct communication with the inner space of a station and any other reactor parts present in the interior of a station are substantially contacted with no more than one reactant. Furthermore, when present, each reactant can be at an appropriate temperature so as to minimize or eliminate gas phase reactions, minimize or eliminate particle formation, and minimize or eliminate deposition on surfaces of the station or reactor in general. That is, without being limited to any theory, keeping each reactant at an appropriate temperature until the reactant reacts with the substrate can minimize or eliminate gas phase reactions and/or particle formation associated with the reactant being at an undesired temperature.
It is noted that the inner surfaces of a station can be contacted with one or more inert gases (e.g. a carrier gas and/or purge gas) in addition to a reactant gas. Any wafer transfer member for transferring a wafer from one station to another station and moving from one station to another station will not be present in the station during contacting the wafer with a reactant and, therefore, will not be contacted with a reactant.
Optionally, the substrate can remain stationary while being exposed to reactant in each station. In some embodiments, the substrate is moved between two or more stations via a rotating wafer support system. The substrate can be placed on a wafer support, for example a paddle, which can be rotated so as to move the substrate between stations. Optionally, after a substrate is contacted with a reactant in a station, a purge is applied to the rotating wafer support before it rotates the substrate to a subsequent station. In some embodiments, the substrate is moved between two or more stations via a spider, for example a spider as described herein. In some embodiments, the substrate is transported on an end effector from one station to another.
It is noted that if two different stations comprise two different reactants, different reaction conditions, for example different pressures and/or temperatures can be maintained in the different stations. For example, a first station can be at a first temperature and pressure optimized for a first reactant at the first station, and a second station can be at a second temperature and pressure optimized for a second reactant at the second station. As such, in some embodiments, the whole first station is at a different temperature than the whole second station. In some embodiments, the whole first station is at a different pressure than the whole second station. In some embodiments, the whole first station is at a different temperature and pressure than the whole second station. In some embodiments, the whole first station is at a different temperature than the whole second station, but the two stations are at the same pressure. In some embodiments, the whole first station is at the same temperature as the whole second station, but the two stations are at the different pressures.
Optionally, a station is further in gas communication with a purge gas source and/or a vacuum, so that the station can be purged. For example, in accordance with some embodiments herein, after a substrate is contacted with a reactant at a first station (but before the substrate is moved to a second station), the station can be purged while the substrate remains in the first station so as to minimize or eliminate the possibility of an lingering reactant being transported to the second station along with the wafer. It is contemplated reactant trailing on the substrate as it is moved to the next station can result in undesired particle formation, gas phase reactions and/or CVD-type reactions with a different reactant at that next station (especially if the two different reactants have different temperature stabilities), and as such, in accordance with some embodiments herein, purging can facilitation separation between different reactants, and this minimize such undesired CVD-type reactions.
Optionally, a “purge location” can be in gas communication with a purge gas and/or a vacuum, but does not supply reactant to a substrate. It is contemplated that after being contact with a first reactant in a first station, a substrate can be placed in a purge location. A purge can be performed while the substrate is in the purge location so as to remove any lingering first reactant from the substrate. After the purge, the substrate can be placed in a second station that provides a second reactant to the substrate. Optionally a purge location is in gas isolation from each of the stations that provides reactant. It is noted that purge locations can be compatible with purging a reaction station itself. For example, after the substrate is contacted with a reactant in a station (and while the substrate is still inside the station), a purge gas can be provided to the station so as to purge the station, and the substrate can then be placed in a purge location for an additional purge. For example, after the substrate is contacted with a reactant in a station (and while the substrate is still inside the station), the substrate can be placed in a purge location for an additional purge, and the station itself can be purged while the substrate is being purged in the purge location (the purge of the station can begin before, while, or after the substrate is removed). In some embodiments, the intermediate space (outside of the stations) comprises the purge location, or the intermediate space consists or consists essentially of the purge location.
For some ALD processes, some reactants under some sets of reactant conditions (e.g. temperature, pressure, amount of reactant) can make a reactant difficult to purge from a chamber or station. It is contemplated that methods and apparatuses in accordance with some embodiments herein can address “difficult to purge” reactants and conditions. For example, if a particular reactant under a particular set of reaction conditions is difficult to purge at a certain station, the substrate can be removed from the station while the station continues to be purged before another substrate is placed in the station. Optionally, the substrate can be moved to a purge station to remove any remaining trailing reactant, while the “difficult-to-purge” reactant continues to be purges from its station.
It is contemplated that if two reactants that react with each other are both present in the same purge location or purge line, the reactants can leave undesired CVD deposits on the purge location and/or in the purge line. Accordingly, in some embodiments, different stations are in gas communication with different purge lines, so that a first reactant does not contact a second reactant in the purge line. For example, the station(s) that provide a first reactant can be in gas communication with a first purge line, and the station(s) that provide a second reactant can be in gas communication with a second purge line that is different from the first purge line. Accordingly, in some embodiments, different purge locations are associated with purging different reactants. For example, a first purge location can be positioned downstream (in a process flow) from a first station that provides a first reactant, and a second purge location can be positioned downstream (in a process flow) from a second station that provides a second reactant, so that the first reactant and second reactant are not purged at the same purge location.
Optionally, for example in the context of dual selective ALD (described, for example, in U.S. application Ser. No. 14/687,833 filed Apr. 15, 2015, which is incorporated by reference in its entirety herein), a third station further provides a third reactant (different from the first and second reactants) that is selectively adsorbed onto the second exposed surface of the substrate to form no more than a monolayer relative to the first exposed surface (or the film deposited on the first exposed surface). The third reactant can have a different temperature stability than the first reactant, the second reactant, or both the first and second reactant. As such, the substrate can be contacted with the third reactant in the third station in gas isolation from the first and second stations and at a third temperature that is different from the first and/or second temperature. As such, the third reactant can be preferentially adsorbed on the second exposed surface of the substrate (relative to the first exposed surface) at a temperature that is different from the temperature at which the first and/or second reactants are adsorbed. Furthermore, a fourth station further provides a fourth reactant (different from the third reactant and having different temperature stability than the first, second, and/or third reactant) that reacts with the third reactant adsorbed on the second surface so that no more than a monolayer of the fourth reactant is adsorbed on the second surface. Each of the first, second, third, and fourth stations can be in gas isolation from each other, either continuously, or temporarily (such as when a substrate is positioned inside each station).
Optionally, one or more stations in accordance with some embodiments herein comprise a susceptor on which a substrate can be placed. The susceptor can be heated, and thus can be configured to heat a substrate to a suitable temperature. As such, in some embodiments, a susceptor in the first station is heated to a first temperature, while a susceptor in the second station is heated to the second temperature. It is noted that different reactants can react at different temperatures. Accordingly, in some embodiments, the susceptor can heat the substrate for different durations so as to allow the substrate to reach the appropriate temperature.
Optionally, the susceptor can have a lower mass than the substrate, so that the susceptor can be heated more rapidly than the substrate. Optionally, the susceptor does not move from station to station. Optionally, the susceptor comprises a heated susceptor. In some embodiments, the susceptor is at an appropriate temperature for deposition of a reactant before the substrate is placed on the susceptor. In some embodiments, the susceptor is heated to an appropriate temperature for deposition of a reactant after the substrate is placed on the susceptor.
In some embodiments, an ALD reactor comprises at least 2 stations, for example at least 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 30, 40, 50, 100, 150, 200, 250, 300, 400, or 500 stations, including ranges between any two of the listed values. It is contemplated that in order to minimize undesired CVD reactions, gas phase reactions, and/or particle formation by maintaining separation between different reactants with different temperature stabilities in accordance with some embodiments herein, it can be useful for a reactor to have at least twice as many stations as substrates. For example, the reactor can be configured for a ratio of less than or equal to 0.5 substrates per station, for example 0.5, 0.4, 0.3, 0.2, 0.1, or 0.05 substrates per station, including ranges between any two of the listed values.
In accordance with some embodiments herein, methods of deposition, for example atomic layer deposition (ALD) are provided. The method can comprise providing a substrate an exposed surface. The method can comprise contacting the entire substrate in a first station with a first reactant at a first temperature so that no more than one monolayer of the first reactant is adsorbed on the exposed surface. The method can comprise placing the substrate in a second station, and contacting the entire substrate in the second station with a second reactant in the substantial absence of the first reactant at a second temperature different from the first temperature, so that no more than one monolayer of the second reactant is adsorbed on the exposed surface that adsorbed the first reactant. Optionally, the substrate is placed in the first station and the second station by a transfer system, wherein no surface of the transfer system is substantially in the presence of more than one reactant. Optionally, the method is repeated until a film of desired thickness is deposited over the exposed surface. Optionally, other than the substrate itself, no other surfaces are contacted with both the first and second reactant (e.g. surfaces of the first and second station, substrate transfer members, gas source lines, purge lines, susceptors, and/or substrate transfer mechanisms, if present, are not contacted with both the first and second reactant). Optionally, the ALD comprises selective ALD. Optionally, the ALD comprises dual selective ALD. In some embodiments, a first wafer is contacted with the first reactant at the first temperature while a second wafer is contacted with the second reactant at the second temperature, and in which the first station and second station are in gas isolation from each other. In some embodiments, each reactant substantially contacts the substrate at only one temperature, and two or more different reactants are contacted with the substrate at different temperatures. In some embodiments, no surface of any station, substrate transfer member, substrate transfer mechanism, and/or purge line is substantially contacted with more than one reactant. As such, no surface within a station (other than the substrate itself, if present) is substantially contacted with more than one reactant.
In some embodiments, the method comprises selective ALD. The method can comprise providing a substrate comprising two different exposed surfaces (e.g. different compositions and/or different morphologies or crystallinities). The method can comprise contacting the entire substrate in a first station with a first reactant at a first temperature so that no more than one monolayer of the first reactant is adsorbed on a first exposed surface preferentially to a second, different exposed surface of the substrate. The method can comprise placing the substrate in a second station, and contacting the entire substrate in the second station with a second reactant at a second temperature (different from the first temperature) in the substantial absence of the first reactant at the second station, so that no more than one monolayer of the second reactant is adsorbed on the first exposed surface that adsorbed the first reactant. Optionally, the method is repeated until a film of desired thickness is selectively deposited over the first exposed surface (relative to the second exposed surface). In accordance with the method, no adsorption of the first reactant occurs on the second exposed surface. Optionally, the method comprises dual selective ALD. Optionally, other than the surfaces of the substrate itself, no other surfaces are contacted with both the first and second reactant (e.g. surfaces of the first and second station, gas source lines, purge lines, susceptors, and/or substrate transfer members, if present, are not contacted with both the first and second reactant). In some embodiments, a first substrate in the first station is contacted with the first reactant at the first temperature while a second substrate in the second station is contacted with the second reactant at the second temperature.
Without being limited by any theory, it is contemplated that gas phase reactions, particle formation, and/or CVD reactions can interfere with ALD, and especially selective ALD or dual selective, for example by decreasing or eliminating selectivity. Additionally, undesired gas phase reactions, particle formation, and/or CVD reactions can reduce the quality of the deposited film, and/or leave undesired deposits on the reactor, necessitating additional cleaning processes and/or damaging the reactor. It is contemplated that selective ALD processes in accordance with some embodiments herein minimize and/or eliminate gas phase reactions, particle formation, and/or CVD reactions, thereby yielding highly selective deposition, high film quality, and moreover preventing any deposition on the reactor surfaces and extending the operational life of the reactor. Accordingly, in some embodiments, physical and optionally temporal separation is maintained between ALD reactants and different reactants are contacted with the substrate at different temperatures. In some embodiments, no two different reactants are present in the same location at any time during an ALD deposition process. In some embodiments, each reactant substantially contacts the substrate at only one temperature, and two or more different reactants are contacted with the substrate at different temperatures. By way of example, the substrate can be moved to different stations, each of which is in gas isolation from the other stations and provides a different reactant to contact the substrate at an appropriate temperature for the particular reactant (so that the temperatures can differ from station-to-station). Additionally, residual reactants can be removed from the substrate before it is placed in a subsequent station to minimize undesirable CVD reactants that would involve residual reactants that follow the substrate to the subsequent station, and or undesirable gas phase interactions that would involve the residual reactants following the substrate to the subsequent station at a different temperature than the earlier station.
In some embodiments, at least one process step involving one or more reactants that are difficult to purge or prone to CVD reactions is performed prior to placing the substrate in the first station in accordance with some embodiments herein. For example, the substrate is first placed in at least one preliminary station, and contacted with a preliminary reactant (or combination of reactants) that is difficult to purge and/or prone to CVD reactions. After the substrate is contacted with the preliminary reactant (or combination of reactants), the substrate is placed in the first station. For example, the substrate can undergo a preliminary passivation step or a preliminary CVD reaction in the preliminary station. Optionally, the substrate is subject to a purge (either in the preliminary station or in a purge location) after being contacted with the preliminary reactant (or combination of reactants) but prior to being placed in the first station.
In some embodiments, the substrate is not contacted with the first reactant at any location other than the first station, and the substrate is not contacted with the second reactant at any location other than the second station. As such, the first reactant is not provided at the second station and/or the second reactant is not provided at the first station. Optionally, each station provides no more than one type of reactant. As such, in some embodiments, the first station provides only one type of reactant, and the second station only provides one type of reactant, which is different than the reactant provided by the first station. In some embodiments, each station provides only one reactant. In some embodiments, each reactant substantially contacts the substrate at only one temperature, and two or more different reactants are contacted with the substrate at different temperatures.
It is further contemplated that maintaining temporal separation between reactants can facilitate the maintenance of “gas isolation” and can facilitate different reactants being at different temperatures in accordance with some embodiments herein, and as such, can minimize or eliminate gas phase reactions, particle formation, and undesired CVD reactions. For example, if a first reactant is not flowed into the reactor at the same time as a second reactant, these reactants can be maintained in temporal gas isolation. For example, in embodiments in which gas walls or gas bearings maintain spatial gas isolation, temporal isolation can further facilitate gas isolation by minimizing or eliminating effects of trace amounts of gas that diffuse out of stations. For example, embodiments in which physical walls maintain gas isolation, temporal isolation can further minimize or eliminate diffusion or leakage of reactants into other stations. In some embodiments, gas isolation comprises temporal separation between two reactants at different temperatures. In some embodiments, gas isolation comprises physical and temporal separation between two reactants at different temperatures. In some embodiments, all of the reactants in the ALD process are physically separated. In some embodiments, all of the reactants in the ALD process are temporally separated. In some embodiments, all of the reactants in the ALD process are physically and temporally separated. It is noted that maintaining temporal separation between reactants may decrease throughput, but that in accordance with some embodiments herein, it is acceptable to decrease throughput so that process advantages such as high selectivity, high film quality and/or reactor longevity can be achieved.
In some embodiments, the first station is purged while the first substrate is present in the first station after contacting the first substrate with the first reactant. The second station can be purged while the first substrate is present therein after contacting the first substrate with the second reactant. Optionally, the first station and second station comprise separate purge lines as described herein so as to minimize possible undesired CVD reactions between the first and second reactants in the purge lines. It is contemplated that in accordance with some embodiments herein, if the first substrate is exposed to a purge in the station in which it was contacted with a reactant, after the purge, the first substrate can be placed directly in a subsequent station without being placed in an intermediate location such as a purge location and/or wafer handling chamber.
In some embodiments, after contacting the first substrate in the first station with the first reactant, the substrate is placed in the second station without being placed in an additional location. Examples of additional locations include purge locations, and other stations configured to deliver reactant. It is noted that a substrate may pass through three-dimensional space (for example an “intermediate space”) while being moved from the first station to the second station, but so long as the three-dimensional space does not include a different station or purge location, the substrate will have been considered to have not been placed in an “additional location”. As such, in some embodiments, after contacting the first substrate in the first station with the first reactant, the substrate is placed in the second station without being placed in an additional location, and as such the substrate is not contacted with any additional reactants after the first reactant and prior to the second reactant.
In some embodiments, the first substrate is purged in a first purge location after being contacted with the first reactant and before being placed in the second location. The first purge location can be a location that is not in gas communication with the first station. In some embodiments, the first substrate is purged in a second purge location after being contacted with the second reactant in the second location. The second purge location can be a location that is not in gas communication with the second station. In some embodiments, the second purge location is different from the first purge location. In some embodiments, the second purge location is the same as the first purge location.
As described herein, it can be desirable to minimize or eliminate chemical vapor deposition (CVD)-type reactions, which can leave undesired deposits on the reactor surface, and/or on the substrate. Accordingly, in some embodiments, substantially no CVD-type reactions occur on any surface of the first station, and wherein substantially no CVD-type reactions occur on any surface of the second station. As used herein “substantially no CVD-type” (including variations of this root term) means that no more than 0.1%, preferably no more than 0.01% of the reactions involving a reactant in excess in a reaction space are CVD-type reactions. In some embodiments, substantially no CVD-type reactions occur on any surface of the reactor. In some embodiments, substantially no CVD-type reactions occur on the substrate. In some embodiments, substantially no CVD-type reactions occur in the purge lines and/or purge locations. As used herein “substantially no gas phase reactions” (including variations of this root term) means that no more than 0.1%, preferably no more than 0.01% of the reactions involving a reactant in excess in a reaction space are gas phase reactions. In some embodiments, substantially no gas phase reactions occur in a station. In some embodiments, substantially no gas phase reactions occur in the purge lines and/or purge locations. It is noted that gas phase reactions can result in particle formation. As such, in some embodiments, the occurrence of substantially no gas phase reactions occur is accompanied by substantially no particle formation. It is noted that if a substrate is contacted with a first reactant “substantially in the absence” or “substantially free” of a second reactant (or vice-versa), even if the first and second reactants would engage in a CVD-type reaction and/or gas phase reactions with each other, there would be substantially no CVD-type reactions or gas phase reactions. Thus, as used herein, if a first reactant is “substantially in the absence” or “substantially free” of a second reactant (or vice-versa), there is a molar ratio of the first reactant to the second reactant of at least 10,000:1, for example at least 10,000:1; 20,000:1; 30,000;1, 40,000:1; 50,000:1; 75,000:1; 100,000:1; 150,000:1; 200,000:1, 250,000:1; 300,000:1; 400,000:1, 500,000:1; 600,000:1; 700,000:1; 800,000:1; 900,000:1; 1,000,000:1 or 1,000,000,000:1, including ranges between any two of the listed values. It is noted that “substantially in the absence” or “substantially free” as used herein also encompasses a complete absence. That is, if a second reactant is completely absent, a reaction is performed “substantially in the absence” or “substantially free” of the second reactant, but if the second reactant is substantially absent (or “substantially free”), it is not necessarily completely absent (or “completely free”). As such, as used herein, the phrase “no surface is substantially contacted with more than one reactant” (and variants of this root phrase) means that each applicable surface (other than the wafer) is contacted with up to one reactant during the ALD process, but no more than an insubstantial amount of any other reactant, so that for any gas that contacts that surface, the molar ratio of any other reactant to total gas is less than 1:10,000, for example less than 1:10,000; 1:20,2000; 1:30,000; 1:40,000; 1:50,000; 1:75,000; 1:100,00; 1:150,000; 1:200,000; 1:250,000; 1:300:000; 1:400,000; 1:500,000; 1:600,000; 1:700,000; 1:800,000; 1:900,000; 1:1,000,000; or 1:1,000,000,000, including ranges between any two of the listed values. It is noted that the phrase “no surface is substantially contacted with more than one reactant” (and its variants) as used herein also encompass a surface being contacted no reactant, or being contacted with only one reactant.
It is contemplated that in accordance with some embodiments herein, that decreasing process throughput can be acceptable in order to minimize or eliminate undesired CVD reactions and/or gas phase reactions so that substantially no undesired CVD reactions and/or gas phase reactions occur. However, it is also contemplated that in some embodiments, two wafers can effectively be swapped between the first and second stations so as to minimize or eliminate undesired CVD reactions and/or gas phase reactions, while making use of the first and second stations at the same time. Accordingly, in some embodiments, while the first substrate is not present in the first station, a second substrate can be placed in the first station, in which the second substrate comprises a third exposed surface and a fourth exposed surface that is different from the third exposed surface. The second substrate in the first station can be contacted with the first reactant (substantially in the absence of the second reactant) at the first temperature and in gas isolation from the second station, such that the first reactant preferentially reacts with the third exposed surface relative to the fourth exposed surface, such that no more than one monolayer of the first reactant is adsorbed on the third exposed surface. After contacting the second substrate in the first station with the first reactant at the first temperature, and after contacting the first substrate in the second station with the second reactant at the second temperature (a different temperature from the first temperature), the second substrate can be placed in the second station substantially in the absence of the first reactant and placing the first substrate in the first station substantially in the absence of the second reactant, thereby swapping the first substrate and second substrate so that a cycle of alternatingly contacting each substrate with the first and second reactants can be repeated. In some embodiments, the first reactant does not react with the fourth surface. In some embodiments, the reactor comprises multiple pairs of stations, and in each pair of stations, a pair of wafer is repeatedly swapped until a film of desired thickness is selectively deposited on each wafer.
In accordance with some embodiments herein, additional ALD reactions can be performed on the substrate, for example as part of a dual selective ALD process sequence. Without being limited by any theory, it is contemplated that the methods and apparatuses in accordance with various embodiments herein are very useful for dual selective ALD. As dual selective ALD typically involves more than two reactants (for example 4 or 6 reactants), it is contemplated that dual selective ALD can be especially susceptible to undesired CVD reactions between the different reactants. Accordingly, maintaining spatial and/or temporal separation between reactants, and contacting the substrate with different reactants at different temperatures in accordance with various embodiments herein can yield dual selective ALD with high selectivity, high-quality deposited films, and minimal to no deposits on the reactor. The additional ALD reactions can be performed in stations other than the first or second station. In some embodiments an additional non-selective ALD reaction is performed on the substrate. In some embodiments, the additional ALD reactions are selective and provide for dual selective ALD on two different surfaces of the substrate. In some embodiments, a first film of a desired thickness is selectively deposited on the first surface of the substrate by ALD, and a second, different film of desired thickness is selectively deposited on the second, different surface of the first substrate by ALD (the first and second films can be of the same thickness, or can be of different thicknesses). Optionally, the second film of desired thickness is deposited by shuffling the wafer between a third station that provides a third reactant and a fourth station that provides a fourth reactant, in which the third and fourth stations are in gas isolation from the first and second stations and each other, and in which the third and fourth reactants are selectively adsorbed on the second surface, thus providing dual selective ALD on the first substrate. In some embodiments, the method further comprises a second selective ALD process that deposits a second thin film on the second surface of the first substrate, but not on the first surface of the first substrate. For example, the method can comprise dual selective ALD. In some embodiments, each station provides only one reactant. In some embodiments, each reactant substantially contacts the substrate at only one temperature, and two or more different reactants are contacted with the substrate at different temperatures.
In some embodiments, selective ALD reactions are performed on multiple substrates in parallel. In some embodiments, while repeating (a)-(d) as described above, a third substrate is placed in a third station. The third substrate can comprise a fifth exposed surface and sixth exposed surface that is different from the fifth exposed surface. The third substrate in the third station can be contacted with the first reactant substantially in the absence of the second reactant and at the first temperature, wherein the third station is in gas isolation from the first station and second station (or is placed in gas isolation from the first and second stations concurrent with or after the substrate is placed in the third station), and wherein the first reactant reacts with the fifth exposed surface but not the sixth exposed surface, such that no more than one monolayer of the first reactant is adsorbed on the fifth exposed surface. After contacting the third substrate in the third station with the first reactant, the third substrate can be placed in a fourth station, in which the fourth station is in gas isolation from the first station, second station, and third station (or is placed in gas isolation from the first, second, and third stations concurrent with or after the substrate is placed in the fourth station). The third substrate in the fourth station can be contacted with the second reactant substantially in the absence of the first reactant and at the second temperature (that is different from the first temperature), wherein the second reactant preferentially reacts with the no more than one monolayer of the first reactant on the fifth exposed surface relative to the sixth exposed surface, such that no more than one monolayer of the second reactant is adsorbed on the fifth exposed surface. Additionally, to achieve a selectively-deposited film of desired thickness, the method can comprise repeating contacting the third substrate in the third station with the first reactant at the first temperature and substantially in the absence of the second reactant and contacting the third substrate in the fourth station with the second reactant at the second temperature and substantially in the absence of the first reactant until a film of desired thickness is selectively deposited on the fifth surface but not the sixth surface
A variety of approaches are suitable for providing gas isolation between the stations, for example the first and second station, in accordance with the methods and reactors herein. Moreover, it is noted that the stations can either be continuously in gas isolation, or can be placed in gas isolation after the substrate is placed in the station, but before precursor is provided into the station. In some embodiments, at least one solid material provides gas isolation between the first and second stations, for example a glass or ceramic or metal or polymer wall. In some embodiments, a gas bearing or gas curtain provides gas isolation between the first and second stations. In some embodiments, gas isolation between the first and second stations does not comprise either of a gas bearing or a gas curtain but entirely relies on material walls.
In some embodiments, the stations are in fixed locations relative to each other. In some embodiments, the first station is in a fixed location relative to the second station. In some embodiments, the substrate is not in motion while being contacted with reactant in a station (e.g. while being contacted with the first reactant in the first station and/or the second reactant in the second station.
A variety of approaches are suitable for moving the substrate from station to station in accordance with methods and reactors herein. In some embodiments, a rotating substrate holder (e.g. comprising a rotational paddle) is provided. Accordingly, in some embodiments, placing the first substrate in the second station comprises rotating a substrate holder that holds the first substrate, thereby placing the first substrate in the second station. In some embodiments, a spider is provided. Accordingly, in some embodiments, a spider places the first substrate in the first station, removes the first substrate from the first station, and places the first substrate in the second station. Optionally, the stations can be fixed relative to each other. In some embodiments, the first substrate is placed in a substrate holder at the first station, and wherein placing the first substrate in a second station is performed without moving the substrate holder. In some embodiments, both a rotating substrate holder and spider are provided.
Examples of approaches for moving a substrate from station-to-station in accordance with some embodiments herein are illustrated schematically in
As illustrated schematically in
As illustrated schematically in
As illustrated schematically in
It is noted that in some embodiments, two or more pairs of stations can provide the same reactants (e.g. RC1 and RC2 provide first and second reactants, respectively and RC3 and RC4 provide first and second reactants, respectively). As such, multiple cycles of deposition could involve “rotating” a substrate among both pairs of stations (e.g. via the cycle RC1->RC2->RC3->RC4), or “swapping” the substrate between stations in a pair (repeatedly cycling substrate #1 between RC1 and RC2). Swapping is schematically illustrated in
In some embodiments, two or more pairs of stations perform the same deposition process on two or more substrates in parallel. For example, substrate #1 is contacted with a first reactant in RC1 and substrate #2 is contacted with a first reactant in RC2. Substrate #1 is then swapped into RC3 and substrate #2 is then swapped into RC4, and a second reactant is provided in RC3 and RC4. The deposition cycle can be repeated by (a) swapping substrate #1 between RC1 and RC2 until a film of desired thickness is achieved, and (b) substrate #2 between RC3 and RC4 until a film of desired thickness is achieved. Optionally, a substrate is present in each station in pairs, and the substrates of each pair are swapped with each other (e.g. substrate #1 is in RC1, substrate #2 is in RC2, substrate #3 is in RC3, and substrate #4 is in RC4, and substrates #1 and #2 are swapped with each other, while substrates #3 and #4 are swapped with each other).
In some embodiments, the first reactant is not flowed into the first station at the same time that the second reactant is flowed into the second station. In some embodiments, the first reactant is continuously flowed into the first station and/or the second reactant is continuously flowed into the second station. Optionally, after being placed in that station and contacted with the continuously-flowed reactant, the substrate is placed in a purge location for a purge prior to being placed in a subsequent station.
In some embodiments, the first substrate is exposed to the first reactant in the first station at a different pressure than the pressure at which the first substrate is exposed to the second reactant at the second station. For example, there can be at least a 0.5-fold difference in pressure between the first station and the second station, for example, 0.5-fold, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5, 6, 7, 8, 9, 10, 15, 20, 25, 20, 40, or 50-fold difference in pressure between the two stations. In some embodiments, the first station is at a greater pressure than the second station. In some embodiments, the second station is at a greater pressure than the first station.
A variety of substrates and deposition chemistries can be used in accordance with embodiments herein.
In some embodiments, single selective ALD is performed. In some embodiments, dual selective ALD is performed. Dual selective ALD can comprise selective deposition of a first film over a first exposed surface of a substrate (e.g. a dielectric), and selective deposition of a second, different film over a second, different exposed surface of a substrate (e.g. a metal). Optionally, deposition of a first thin film over the first exposed surface can be repeated until a first film of desired thickness is achieved, and deposition of a the second think film over the second surface can be repeated until the second film of desired thickness is achieved. In some embodiments, deposition of the first film of desired thickness is completed (e.g. deposition of the first thin film is repeated some number of times), and then the second film is deposited (e.g. deposition of the second thin film is repeated some number of times). In some embodiments, alternating deposition of the first film and second film are performed (e.g. deposition of the first thin film is repeated one or more times, deposition of the second thin film is repeated one or more times), and this cycle is repeated one or more times.
In some embodiments, selective deposition is performed. It is contemplated that contacting the substrate with different reactants at different temperatures (e.g. for different reactants with different temperature stabilities) in accordance with some embodiments herein can yield highly selective deposition and yield high quality films. For example, the different reactants at different temperatures can provide for substantially no gas phase reactions and/or substantially no particle formation so that a high-quality thin film is preferentially deposited on a desired surface of the substrate relative to the other surfaces.
In some embodiments, non-selective deposition is performed. For example, two different reactants in a non-selective deposition process can have different temperature stabilities. Accordingly, contacting the substrate with a first reactant at a first temperature, and contacting the substrate with a second reactant at a second temperature can yield high quality films. Without being limited by any theory, performing the deposition so that substantially none of the first reactant is contacted with the substrate at the second temperature and substantially none of the second reactant is contacted with the substrate at the first temperature can provide for substantially no gas phase reactions and/or substantially no particle formation, thus yielding high quality deposited thin films. For example, in some embodiments, an Al/N thin film is deposited, in which the substrate is contacted with Al precursor at a first temperature (and substantially in the absence of N precursor), and in which the substrate is contacted with N precursor at a second temperature (and substantially in the absence of Al precursor)
In some embodiments, Sb is selectively deposited on a first exposed surface of a substrate (e.g. a metal), and W is selectively deposited on a second exposed surface of a substrate (e.g. a dielectric).
A reactor in accordance with some embodiments herein comprises a first station and a second station in gas isolation from each other (or in which the reactor is configured to place a given station in gas isolation from the other station after a substrate is placed in that given station), in which the first station is in gas communication with a first reactant source and the second station is in gas communication with a second reactant source, in which the first and second stations can be configured to contact a substrate with reactant at different temperatures, and in which the first and second reactants are different from each other. The reactor can further comprise a controller set to control the movement of the substrate from station to station, the flow of reactants into stations, and/or the purging of stations and/or purge locations. Optionally, the reactor can be configured so that a first station provides a first reactant to contact a substrate in the first station at a first temperature, and a second station provides a second reactant to contact a different substrate in the second station at a second temperature. In some embodiments, the reactor is configured for selective deposition. In some embodiments, the reactor is configured for non-selective deposition. In some embodiments, the reactor comprises an ALD reactor. In some embodiments, the ALD reactor is configured for selective ALD, for example single-selective ALD or dual-selective ALD.
The reactor can be configured for ALD on a substrate. The reactor can comprise a first station configured to contain a first substrate, in which the first station is configured to contact the first substrate with a first reactant at a first temperature, wherein the first reactant reacts with the first substrate such that no more than one monolayer of the first reactant is adsorbed on the surface of the first substrate. The reactor can comprise a second station in gas isolation from the first station (or is placed in gas isolation from the first station concurrent with or after the substrate is placed in the second station), in which the second station is configured to contain the first substrate and to contact the first substrate with a second reactant substantially in the absence of the first reactant and at a second temperature different from the first temperature, and in which the second reactant is different from the first reactant and reacts with the no more than one monolayer of the first reactant, such that no more than one monolayer of desired material is formed on the first exposed surface. The reactor can be configured so that a first substrate in the first station is contacted with a first reactant at the first temperature while a second substrate in the second station is contacted with a second reactant at the second temperature. In some embodiments, each station provides only one reactant. Each station can be configured for contacting the substrate with reactant at a different temperature.
The reactor can further comprise a substrate transfer system configured to place the first substrate in the first station, and subsequently place the substrate in the second station after contacting the first substrate with the first reactant. The reactor can comprise an intermediate space (see
In some embodiments, the reactor is configured for selective ALD on a first substrate comprising two different exposed surfaces. The reactor can comprise a first station configured to contain a first substrate comprising a first exposed surface and a second exposed surface, in which the first station is configured to contact the first substrate with a first reactant at a first temperature, wherein the first reactant preferentially reacts with the first exposed surface relative to the second exposed surface such that no more than one monolayer of the first reactant is adsorbed on the first exposed surface. The reactor can comprise a second station in gas isolation from the first station (or that can be placed in gas isolation from the first station concurrent with or after the substrate is placed in the second station), in which the second station is configured to contain the first substrate and to contact the first substrate with a second reactant substantially in the absence of the first reactant and at a second temperature that is different from the first temperature, and in which the second reactant is different from the first reactant and preferentially reacts with the no more than one monolayer of the first reactant on the first exposed surface relative to the second exposed surface, such that no more than one monolayer of desired material is formed on the first exposed surface. The reactor can further comprise a transfer member configured to place the first substrate in the first station, and subsequently place the substrate in the second station after contacting the first substrate with the first reactant, and wherein the reactor is configured to place the first substrate in the first station after contact the first substrate with the second reactant. Optionally, the transfer member comprises a spider. Optionally, the transfer member comprises a rotary member, for example a rotating substrate holder. The reactor can further be configured to repeat contacting the first substrate in the first station with the first reactant substantially in the absence of the second reactant and contacting the first substrate in the second station with the second reactant substantially in the absence of the first reactant until a film of desired thickness is selectively formed on the first surface but not the second surface. Optionally, the transfer member is configured to move the substrate between two or more different pairs of stations. Optionally, the transfer member is configured to repeatedly swap the substrate between a particular pair of stations. The ALD reactor can further comprise a controller set to move the substrate via the transfer member to the first station, direct the first station to contact the first substrate with the first reactant at the first temperature, move the substrate to the second station via the transfer member, and direct the second station to contact the first substrate with the second reactant at the second temperature. Optionally, the reactor is configured to perform selective deposition on two or more wafers in parallel. For example, two or more wafers can undergo selective in two or more different pairs of stations. For example, a pair of wafers can simultaneously undergo selective in the same pair of stations (so that wafer #1 starts out in station #1, wafer #2 starts out in station #2, and then wafer #1 is swapped with wafer #2, and the swapping is repeated until a film of desired thickness is formed).
In some embodiments, the reactor comprises at least 2 pairs of stations, for example at least 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 25, 30, 35, 40, 45, or 50 pairs of stations, including ranges between any two of the listed values. Optionally, some or all of the stations are constantly in gas isolation from each other. Optionally, some or all of the stations can be placed in gas isolation from each other prior to, upon, or after the substrate is placed in the station, for example by enclosing the substrate within physical barriers as described herein. It is contemplated that the reactor can be configured to hold as many wafers as there are stations, or optionally fewer wafers than there are stations. In some embodiments, the ratio of wafers being processed by the reactor to number of stations is less than 1:1, for example, less than 0.9:1, 0.8:1, 0.7:1, 0.6:1, 0.5:1, 0.4:1, 0.3:1, 0.2:1, 0.1:1, 0.05:1, or 0.01:1, including ranges between any two of the listed values. Optionally, the rotary substrate transfer member is configured so that the substrate stops at least at one station (e.g., so that the substrate is not continuously in motion during the deposition process). Example arrangements of stations in accordance with some embodiments herein are illustrated in
Optionally, the reactor is configured for linear movement of the substrate. For example, linear movement among a series of stations can be compatible with “swapping” or “rotating” the substrate as described herein.
As used herein a “substrate transfer member” or “transfer member” refers to a structure such as a rotary member or spider that can move a substrate from a first station (or from a transfer mechanism associated with the first station) to a second station (or to a transfer mechanism associated with the second station). In some embodiments, the transfer system comprises a transfer member comprising a spider. A “spider”, as used herein, refers to a wafer transfer member having multiple arms, each arm configured for engaging with a wafer through a spider end effector. The spider can be disposed centrally relative to a number of reaction stations. An example spider in accordance with some embodiments herein is illustrated in
In some embodiments, the substrate transfer system comprises a plurality of “substrate transfer mechanisms”, in which each substrate transfer mechanism is associated with only one station, and can shuttle a substrate between a particular station and the intermediate space, for example by raising and lowering. Optionally, each substrate transfer mechanism (e.g. moveable stage) comprises a plurality of lift pins configured to extend and lift the substrate from the substrate transfer mechanism in the intermediate space. The lifted substrate can be readily picked up by a transfer member such as a spider to move the substrate to a different substrate transfer mechanism in the intermediate space. As such, each substrate transfer mechanism is exposed to no more than one station, and thus is substantially exposed to no more than one reactant (or process step). In some embodiments, each substrate transfer mechanism comprises a moveable stage.
Without being limited by any theory, substrate processing time is generally longer than the transfer time. It is contemplated that in accordance with some embodiments herein, substrate processing time is longer than the transfer time. In
Additional examples of configurations of reactors in accordance with some embodiments herein are illustrates in
In some embodiments, the transfer system comprises a rotating substrate holder configured to remove the first substrate from the first station and place the first substrate in the second station by rotation. Optionally, the ALD reactor comprises a rotary indexing reactor. The rotary indexing reactor can comprise a rotary member such as a table configured to rotate one or more substrates between a plurality of stations. Optionally the rotary member can be driven by a servomotor.
Optionally the stations of the ALD reactor comprise showerhead or showerhead-like distributors configured to flow reactant from the center to the edge of the substrate. It is contemplated that distributing the reactant in such a manner can minimize or eliminate edge effects, which can be characteristic of a cross-flow design. The rotary reactor maintains the stations in gas isolation. Optionally, the rotary indexing reactor maintains the gas isolation via physical walls or other physical barriers. Optionally, the rotary indexing reactor does not rely upon gas bearings or gas walls to maintain the gas isolation. Optionally, the rotary indexing reactor comprises at least 2 stations, for example at least 2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, or 20, including ranges between any two of the listed values. Optionally, the rotary indexing reactor can have variable index and dwell times. In some embodiments, the index time of the indexing reactor is configured for a particular time per particular number of degrees of rotation, and as such, the duration of the index time depends on the number of wafers (e.g. in some embodiments, there is an index time of 100 msec/30 degrees, so for a rotary member comprising 6 substrates, there would be 60 degrees per substrate yielding an index time of 200 msec). It is noted that faster the rotation speed of the rotary indexing reactor, the less time that the substrate spends during transfer from station to station. In some embodiments, the indexing speed is not dependent on deposition time (for example, if deposition time is relatively brief and purge time is rate-limiting). Accordingly, in some embodiments, the rotary indexing reactor provides a full dose of each reactant to the wafer independent of the radial position relative to the platen center of the rotation. In some embodiments, the rotary indexing reactor is characterized by at least one of a large batch, high throughput, flexibility for multi-component films, ability to control particles, and/or amenability to PEALD processes.
In some embodiments, the ALD reactor is configured to prevent the simultaneous presence of substantial quantities of the first reactant and the second reactant in any station of the ALD reactor. For example, each station can comprise barriers such as physical barriers as described herein and/or gas barriers to maintain isolation. For example, each station can comprise physical barriers as described herein but not gas barriers to maintain isolation. Optionally, the ALD reactor comprises one or more scavengers. It is contemplated that scavengers can further enhance gas isolation. For example, gas scavengers comprising vacuums can remove any reactants that have escaped the stations, and prevent or minimize the escaped reactants from entering other stations. In some embodiments, scavengers are positioned between stations. In some embodiments, scavengers are positioned adjacent to stations. In some embodiments, the stations comprise scavengers.
In some embodiments, the ALD reactor further comprises a purge location, configured to receive the first substrate after contacting the first substrate with the first reactant, but prior to placing the first substrate in the second station. The purge location can be configured to perform a purge with the first substrate therein. The purge location can be not in gas communication with the first station, and is not in gas communication with the second station. In some embodiments, the first station is configured to purge the first reactant after contacting the first substrate with the first reactant, and before placing the first substrate in in the second station. In some embodiments, the first station performs the purge while the first substrate is inside the first station. In some embodiments, an initial part of the purge is performed at the first station while the first substrate is inside the first station, the substrate is removed from the first station during the purge and transferred to a purge station, and the purge is completed at the purge station (for example, if the first reactant characteristically has a long purge time).
Without being limited by any theory, it is contemplated that maintaining gas isolation between stations as described herein can minimize or eliminate undesired CVD reactions. Accordingly, in some embodiments, the ALD reactor is configured to substantially prevent CVD reactions from occurring on any surface of the first and second stations of the ALD reactor.
In some embodiments the stations of the ALD reactor are fixed relative to each other. Optionally, the substrate can be removed from and placed in various stations while the stations remain stationary. Optionally, the stations can be moved relative to the substrate, but remain in a fixed position relative to each other. In some embodiments, the substrate is moved from station to station, but is not in motion when it is contacted with a reactant at a station.
In some embodiments, the controller comprises a processor that provides instructions for the transfer system to the first station, and/or move the substrate to the second station via the transfer system. The processor can further provide instructions to direct the first station to contact the first substrate with the first reactant at a first temperature. The processor can further provide instructions to direct the second station to contact the first substrate with the second reactant at a second temperature that is different from the first temperature. The processor can further direct each station to provide the reactant at a particular temperature (or range of temperatures) and/or pressure (or range of pressures). The processor can further provide instructions for a susceptor to heat a substrate to a particular temperature, or allow a substrate to cool to a particular temperature. The processor can further provide instructions to purge a station, for example by flowing an inert gas into the station, and/or by applying a vacuum to a station. The processor can further provide instructions to a purge location to provide a purge while a substrate is therein, for example by flowing an inert gas into the purge location, and/or by applying a vacuum to the purge location
In some embodiments, the ALD reactor is configured to automatically repeat deposition cycles until a film of desired thickness is obtained. As such, the ALD reactor can be configured to repeat one or more deposition cycles without intervention by an operator such as a human operator.
In some embodiments, the ALD reactor is configured to process two or more substrates simultaneously, and in different pairs of stations. The pairs can be configured to perform the same or different ALD processes. In some embodiments, the ALD reactor comprises a third station in gas isolation from the first station and second station (or that can be placed in gas isolation from the first and second station concurrent with or after the substrate is placed in the third station), the third station configured to hold a second substrate comprising a third exposed surface and a fourth exposed surface. The third station can be configured to contact the second substrate with the first reactant at a first temperature, thereby adsorbing no more than one monolayer of the first reactant on the third exposed surface. The ALD reactor can also comprise a fourth station in gas isolation from the first station, second station, and third station (or that can be placed in gas isolation from the first, second, and third stations concurrent with or after the substrate is placed in the fourth station), in which the fourth station is configured to contact the second substrate with the second reactant at the second temperature and substantially in the absence of the first reactant, wherein the second reactant reacts with the no more than one monolayer of the first reactant on the third exposed surface but not the fourth exposed surface, such that no more than one monolayer of the second reactant is adsorbed on the third exposed surface.
In some embodiments, the ALD reactor is configured for single selective ALD, so that a first film is selectively deposited on a first surface of the substrate. In some embodiments, the ALD reactor is configured for dual selective ALD, so that a first film is selectively deposited on a first surface of the substrate, and a second, different film is selectively deposited on a second, different surface of the substrate. In some embodiments, the ALD reactor further comprises a third station in gas isolation from the first station and second station (or that can be placed in gas isolation from the first and second station concurrent with or after the substrate is placed in the third station), the third station configured to contain the first substrate, in which the third station is configured to contact the first substrate with a third reactant that is different from the first and second reactants and at a third temperature that is the same as or different from the first and/or second temperature, thereby adsorbing no more than one monolayer of the third reactant on the second exposed surface of the substrate. The ALD reactor can further comprise a fourth station in gas isolation from the first station, second station, and third station (or that can be placed in gas isolation from the first, second and third stations concurrent with or after the substrate is placed in the fourth station) and configured to contain the first substrate, in which the fourth station is configured to contact the first substrate with a fourth reactant that is different from the first, second, and third reactants and at a fourth temperature that is the same as or different from the first, second, and/or third temperatures and substantially in the absence of the first, second, and third reactants, wherein the fourth reactant reacts with the no more than one monolayer of the third reactant but not the first exposed surface, such that no more than one monolayer of the fourth reactant is adsorbed on the second exposed surface.
In semiconductor and LCD industry, a method of making different processes on a substrate without exposing it to the air is often performed. In addition, multiple processes in which process conditions (e.g. the gas flow, pressure and/or temperature) are different are sometimes repeated alternately on a substrate. For example, in accordance with some embodiments, a laminate processing is performed with a combination of processes such as deposition, etching and pre/post surface treatment.
ALD is a method that can be useful for processing new demanding materials ad combinations of materials, even in a selective fashion for semiconductor devices. Selective deposition is of interest in the semiconductor industry, for example, due to shrinking dimensions (3D structures), the manufacturing of which requires relatively advanced patterning techniques and which also can allow less and less space for active materials layers. Selective deposition in accordance with some embodiments herein can range from single selective deposition such as metal on metal, dielectric on metal, metal on dielectric, and dielectric on dielectric to even dual selective deposition. In addition, a single selective deposition option, bottom-up fill can provide substantial advantages when depositing inside vias or trenches.
The current state of the art deposition tools for bulk film processing cannot necessarily be used for selective deposition. Moreover, it is contemplated herein that an issue for ALD is possible CVD growth. Although in ALD the individuals precursors can be separated, for example with purging steps in between, the presence of two precursors at the same time in the reaction chamber can be possible, for example in conventional ALD approaches. It is contemplated that the presence of two precursors at the same time can easily ruin the selectivity, and can possible result in undesired CVD growth that will not deposit selectively (e.g. preferentially on certain surfaces). The deposition of two different materials, for example dual selective growth can exacerbate these issues, where the precursor number can range from 4 to 6 precursors including the precursors that deposit the layers and also the possible passivation agents. Also, it can be that the most optimal deposition/reaction temperature for these precursors can differ so that conventional deposition approaches are not compatible with deposition in just one reaction chamber.
In some embodiments, the optimization of process flows in selective deposition using separate stations for each material deposition, or each precursor. In accordance with some embodiments, an apparatus with separate station allows the fastest possible wafer transfer between the stations. This configuration, comprising stations in gas isolation, can also be applied to conventional deposition, for example where unwanted reactions between precursors can lead to enhanced particle generation.
In some embodiments, a substrate processing equipment comprising one or more process module(s) (PM) provided, in which plural stations in gas isolation from each other are located. The stations can comprise reaction spaces. The substrate processing equipment can comprise at least two substrate transfer systems, one for moving substrates between the load lock chamber (LLC) and the PM, and the other for moving substrates between process stages in the PM. Process stages in the PM can move, so as to configure the stations to be in gas isolation for processing, and to place the substrate(s) in one intermediate space for transfer between stations. In some embodiments, the stations in gas isolation (e.g. substantially separated RCs) in the PM have separated control capability of process parameters such as gasses, pressure, temperature, RF and other parameters as needed. In some embodiments, the PM is configured for gas isolation between the stations at least during the process steps, which effectively works to prevent interference between stations (and/or has a plurality of same-function stations in it). Optionally, the PM is equipped with a capability to run at least two different processes simultaneously in stations in gas isolation from each other (or in a plurality of stations having the same function) by independently controlling process conditions such as gasses, temperature, pressure, RF and other parameters as needed.
The precursors, WF6 and disilane, used for W deposition are highly reactive toward each other. For selective deposition on an exposed Cu or W surface of a substrate in the presence of SiO2, the follow process is used. A substrate transfer system such as a spider places a substrate at a first station. The first station is placed in gas isolation, including in gas isolation from a second station, by closing a door. WF6 is then provided at the first station. After the substrate is contacted with WF6 at the first station at a first temperature that is suitable for deposition of the WF6, the first station is purged with the substrate still inside. The substrate transfer system then places the substrate in the second station. The second station is placed in gas isolation from the first station by closing a door. The substrate is contacted with disilane at the second station at a second temperature that is suitable for depositing the disilane and different from the first temperature, and then the second station is purged with the substrate still inside. The substrate transfer system then removes the substrate from the second station. The substrate is repeatedly swapped between the first station and the second station. Optionally, a third station in gas isolation from the first and second stations is provided for passivation removal from Cu (organic layer on Cu due to CMP step). The substrate transfer system places the substrate in the third station, and passivation removal from Cu is performed. The passivation is removed at a temperature of typically 250 C, with the use of a vapor phase agent like acetic acid or with the use of a plasma. The transfer system can then remove the substrate from the third station. Optionally, a fourth station in gas isolation from the first and second stations and third is provided for passivation of SiO2. The transfer system places the substrate in the fourth station for silylation compound removal passivation of SiO2 surface (Si—OH passivation) against the W deposition, and then removes the substrate from the fourth station. It is noted that thermal passivation removal from Cu involves a different temperature from the W deposition that is carried out below 120° C.
It is contemplated that deposition of ultra-thin continuous TiN from TiCl4 and NH3 on HfO2 for transistor gate application would benefit from separate reaction chambers which are held at different temperatures in accordance with some embodiments herein. TiCl4 is reacted at temperatures below 300° C. in a first station in gas isolation from a second station, so as to avoid any direct chlorination of Hf—OH or Hf—NH2 groups. NH3 is introduced in a second station above 350° C. and in gas isolation from the first station to allow efficient Cl removal and prevent NH4Cl formation.
Conventionally, thermal ALD of AlN is performed around 375° C. in single wafer tools using TMA and NH3 gas. This deposition temperature is above the decomposition temperature of TMA (and other metalorganic precursors like it), and can lead to the incorporation of substantial amounts of C and H in the deposited AlN films. However, the high temperature is needed for the second half of the reaction, involving NH3 to work. This second half of the reaction is relatively slow even at 375° C. and does not work at all much lower than 350° C.
In accordance with some embodiments herein, a substrate is placed in a first station and in gas isolation from a second station. A TMA pulse is provided at a temperature of 150° C.-250° C. Without being limited by any theory, it is contemplated that this temperature range avoids decomposition of the TMA precursor. The first station is then purged in the first station (so as to evacuate residual TMA and/or byproducts). Moveable barriers defining the first station are opened, and the substrate is moved by a spider from the first station to a second station. The second station with the substrate inside is placed in gas isolation from the first station by moveable barriers defining the second station. In the second station, the substrate is contacted with a pulse of NH3 at 400° C. The second station is then purged with the substrate inside to remove any residual NH3 and/or byproducts. The cycle can be repeated until an AlN film of 3-4 nm is formed. It is further contemplated that the reduction of contaminants (e.g. reduction of C and/or H) can improve the etching speed of thin AlN films such as this one, and thus can reduce the total film thickness needed, and extend the possible use of AlN for patterning application to relatively thinner films.
2-D materials such as WS2 or MoS2 are deposited as ultrathin layers on the dielectric surface. The layers fully cover the surface. The deposition is realized by letting WF6 or MoF5 to react with the dielectric surface at low temperature in a first station in gas isolation from a second station to avoid any etching of the dielectric. The substrate is then subjected to a purge so as to remove residual WF6 or MoF5, and placed in a second station. H2S treatment is carried out on the substrate in the second station at higher temperature, in gas isolation from the first station, and substantially in the absence of WF6 and MoF5. Without being limited b any theory, it is also contemplated that having different temperatures in the stations also allows the use of Mo and W beta-diketonates without decomposing the precursors at the needed higher H2S treatment temperature.
Although this disclosure has been provided in the context of certain embodiments and examples, it will be understood by those skilled in the art that the disclosure extends beyond the specifically described embodiments to other alternative embodiments and/or uses of the embodiments and obvious modifications and equivalents thereof. In addition, while several variations of the embodiments of the disclosure have been shown and described in detail, other modifications, which are within the scope of this disclosure, will be readily apparent to those of skill in the art based upon this disclosure. It is also contemplated that various combinations or sub-combinations of the specific features and aspects of the embodiments may be made and still fall within the scope of the disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined with, or substituted for, one another in order to form varying modes of the embodiments of the disclosure. Thus, it is intended that the scope of the disclosure should not be limited by the particular embodiments described above.
The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein.
This application is a continuation of U.S. patent application Ser. No. 14/811,435, filed Jul. 28, 2015, and entitled “Methods And Apparatuses For Temperature-Indexed Thin Film Deposition”, the entire disclosure of which is incorporated herein by reference. This Application is related to co-pending U.S. application Ser. No. 14/811,528 filed Jul. 28, 2015, and entitled “Apparatuses for Thin Film Deposition” and U.S. Pat. No. 10,204,790, issued Feb. 12, 2019, and entitled “Methods for Thin Film Deposition”, each of which is hereby incorporated by reference in its entirety. Any and all applications for which a foreign or domestic priority claim is identified in the Application Data Sheet as filed with the present application are hereby incorporated by reference in their entirety under 37 C.F.R. § 1.57.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 14811435 | Jul 2015 | US |
| Child | 16677446 | US |
