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Kiminori Watanabe
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Kawasaki-shi, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Lateral high-breakdown-voltage transistor having drain contact region
Patent number
6,989,568
Issue date
Jan 24, 2006
Kabushiki Kaisha Toshiba
Kiminori Watanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral high-breakdown-voltage transistor
Patent number
6,707,104
Issue date
Mar 16, 2004
Kabushiki Kaisha Toshiba
Kiminori Watanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral high-breakdown-voltage transistor
Patent number
6,489,653
Issue date
Dec 3, 2002
Kabushiki Kaisha Toshiba
Kiminori Watanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOSFET
Patent number
6,025,622
Issue date
Feb 15, 2000
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOSFET
Patent number
5,780,887
Issue date
Jul 14, 1998
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of operating thyristor with insulated gates
Patent number
5,463,231
Issue date
Oct 31, 1995
Kabushiki Kaisha Toshiba
Tsuneo Ogura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of operating thyristor with insulated gates
Patent number
5,428,228
Issue date
Jun 27, 1995
Kabushiki Kaisha Toshiba
Tsuneo Ogura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Thyristor with insulated gate
Patent number
5,315,134
Issue date
May 24, 1994
Kabushiki Kaisha Toshiba
Tsuneo Ogura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOSFET
Patent number
5,286,984
Issue date
Feb 15, 1994
Kabushiki Kaisha Toshiba
Akio Nakagawa
F24 - HEATING RANGES VENTILATING
Information
Patent Grant
Conductivity-modulation metal oxide field effect transistor with si...
Patent number
5,237,186
Issue date
Aug 17, 1993
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity-modulation metal oxide semiconductor field effect tran...
Patent number
5,168,333
Issue date
Dec 1, 1992
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity-modulation metal oxide semiconductor field effect tran...
Patent number
5,124,773
Issue date
Jun 23, 1992
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity-modulation metal oxide field effect transistor with si...
Patent number
5,105,243
Issue date
Apr 14, 1992
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOSFET
Patent number
5,093,701
Issue date
Mar 3, 1992
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Planar semiconductor device having high breakdown voltage
Patent number
5,086,332
Issue date
Feb 4, 1992
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOSFET
Patent number
5,086,323
Issue date
Feb 4, 1992
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral conductivity modulated MOSFET
Patent number
5,068,700
Issue date
Nov 26, 1991
Kabushiki Kaisha Toshiba
Yoshihiro Yamaguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity-modulation metal oxide semiconductor field effect tran...
Patent number
4,980,743
Issue date
Dec 25, 1990
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral conductivity modulated MOSFET
Patent number
4,928,155
Issue date
May 22, 1990
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductive modulated MOSFET
Patent number
4,881,120
Issue date
Nov 14, 1989
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dielectrically isolated semiconductor substrate
Patent number
4,878,957
Issue date
Nov 7, 1989
Kabushiki Kaisha Toshiba
Yoshihiro Yamaguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOS transistor device
Patent number
RE32784
Issue date
Nov 15, 1988
Kabushiki Kaisha Toshiba
Akio Nakagawa
357 -
Information
Patent Grant
Lateral conductivity modulated MOSFET
Patent number
4,782,372
Issue date
Nov 1, 1988
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOS transistor device
Patent number
4,680,604
Issue date
Jul 14, 1987
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductivity modulated MOSFET
Patent number
4,672,407
Issue date
Jun 9, 1987
Kabushiki Kaisha Toshiba
Akio Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20120139005
Publication date
Jun 7, 2012
Kabushiki Kaisha Toshiba
Takehito IKIMURA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device having a vertical transistor structure
Publication number
20080029809
Publication date
Feb 7, 2008
Jun Morioka
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20070108518
Publication date
May 17, 2007
KABUSHIKI KAISHA TOSHIBA
Koichi ENDO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Lateral high-breakdown-voltage transistor
Publication number
20040150041
Publication date
Aug 5, 2004
Kabushiki Kaisha Toshiba
Kiminori Watanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Lateral high-breakdown-voltage transistor
Publication number
20030038307
Publication date
Feb 27, 2003
Kabushiki Kaisha Toshiba
Kiminori Watanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Lateral high-breakdown-voltage transistor
Publication number
20010015459
Publication date
Aug 23, 2001
Kiminori Watanabe
H01 - BASIC ELECTRIC ELEMENTS