Takahisa Eimori

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
CMOS semiconductor device and method for manufacturing the same
- Patent number 8,698,249
- Issue date Apr 15, 2014
- Renesas Electronics Corporation
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 8,288,221
- Issue date Oct 16, 2012
- Renesas Electronics Corporation
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple layer insulating film
- Patent number 7,084,508
- Issue date Aug 1, 2006
- Renesas Technology Corp.
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 6,740,584
- Issue date May 25, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing process thereof
- Patent number 6,573,171
- Issue date Jun 3, 2003
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transfer mark structure for multi-layer interconnecting and method...
- Patent number 6,495,928
- Issue date Dec 17, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yasushi Hashizume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing process thereof
- Patent number 6,268,278
- Issue date Jul 31, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having self-aligned contacts
- Patent number 6,087,710
- Issue date Jul 11, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MOS device having field shield isolation
- Patent number 5,930,614
- Issue date Jul 27, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic semiconductor memory device on SOI substrate
- Patent number 5,850,090
- Issue date Dec 15, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a shaped gate electrode
- Patent number 5,834,817
- Issue date Nov 10, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor having a buried impurity region and method of...
- Patent number 5,721,444
- Issue date Feb 24, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,691,551
- Issue date Nov 25, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having SOI structure and manufacturing method...
- Patent number 5,654,573
- Issue date Aug 5, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a field effect transistor with a T shaped polysili...
- Patent number 5,650,342
- Issue date Jul 22, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,637,899
- Issue date Jun 10, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,610,418
- Issue date Mar 11, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a shaped gate electrode
- Patent number 5,543,646
- Issue date Aug 6, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having field shield element isolating structur...
- Patent number 5,521,419
- Issue date May 28, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a shaped gate electrode
- Patent number 5,471,080
- Issue date Nov 28, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor type semiconductor memory device and manufacturin...
- Patent number 5,459,344
- Issue date Oct 17, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,442,212
- Issue date Aug 15, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor type semiconductor memory device and manufacturin...
- Patent number 5,278,437
- Issue date Jan 11, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with T-shaped gate electrode and manufactur...
- Patent number 5,272,100
- Issue date Dec 21, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 5,245,208
- Issue date Sep 14, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field shield isolation structure for semiconductor memory device an...
- Patent number 5,225,704
- Issue date Jul 6, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary semiconductor device having improved device isolating...
- Patent number 5,181,094
- Issue date Jan 19, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing stacked capacitor type semiconductor memory...
- Patent number 5,180,683
- Issue date Jan 19, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD MOSFET with particularly shaped gate electrode immune to hot el...
- Patent number 5,177,571
- Issue date Jan 5, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS semiconductor device with an element isolating field shield
- Patent number 5,164,803
- Issue date Nov 17, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Hiroji Ozaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130034953
- Publication date Feb 7, 2013
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100258878
- Publication date Oct 14, 2010
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20100038729
- Publication date Feb 18, 2010
- RENESAS TECHNOLOGY CORP.
- Takahisa EIMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WHICH HAS MOS STRUCTURE AND METHOD OF MANUFACT...
- Publication number 20080308869
- Publication date Dec 18, 2008
- Renesas Technology Corp.
- Hidekazu Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device which has MOS structure and method of manufact...
- Publication number 20070007602
- Publication date Jan 11, 2007
- Renesas Technology Corp.
- Hidekazu Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20060255469
- Publication date Nov 16, 2006
- Renesas Technology Corp.
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wire structure, semiconductor device, MRAM, and manufacturing metho...
- Publication number 20060086958
- Publication date Apr 27, 2006
- Renesas Technology Corp.
- Takahisa Eimori
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20020190383
- Publication date Dec 19, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Server and method for providing information created by means of too...
- Publication number 20020127532
- Publication date Sep 12, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20020068443
- Publication date Jun 6, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20020056913
- Publication date May 16, 2002
- TAKAHISA EIMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020024098
- Publication date Feb 28, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing process thereof
- Publication number 20010002070
- Publication date May 31, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS

Takahisa Eimori

Person

Patents Grantslast 30 patents

CMOS semiconductor device and method for manufacturing the same

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device with multiple layer insulating film

Semiconductor device and method of fabricating the same

Semiconductor device and manufacturing process thereof

Transfer mark structure for multi-layer interconnecting and method...

Semiconductor device and manufacturing process thereof

Semiconductor device having self-aligned contacts

Method for forming MOS device having field shield isolation

Dynamic semiconductor memory device on SOI substrate

Field effect transistor with a shaped gate electrode

Thin-film transistor having a buried impurity region and method of...

Semiconductor memory device

Semiconductor device having SOI structure and manufacturing method...

Method of making a field effect transistor with a T shaped polysili...

Semiconductor device

Semiconductor memory device

Field effect transistor with a shaped gate electrode

Semiconductor device having field shield element isolating structur...

Field effect transistor with a shaped gate electrode

Stacked capacitor type semiconductor memory device and manufacturin...

Semiconductor memory device

Stacked capacitor type semiconductor memory device and manufacturin...

Field effect transistor with T-shaped gate electrode and manufactur...

Semiconductor device and manufacturing method thereof

Field shield isolation structure for semiconductor memory device an...

Complementary semiconductor device having improved device isolating...

Method of manufacturing stacked capacitor type semiconductor memory...

LDD MOSFET with particularly shaped gate electrode immune to hot el...

CMOS semiconductor device with an element isolating field shield

Patents Applicationslast 30 patents

CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WHICH HAS MOS STRUCTURE AND METHOD OF MANUFACT...

Semiconductor device which has MOS structure and method of manufact...

Semiconductor device and method of fabricating the same

Wire structure, semiconductor device, MRAM, and manufacturing metho...

Semiconductor device and method of fabricating the same

Server and method for providing information created by means of too...

Semiconductor device and method of fabricating the same

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Semiconductor device

Semiconductor device and manufacturing process thereof